TWI359477B - Strained silicon-on-insulator by anodization of a - Google Patents
Strained silicon-on-insulator by anodization of a Download PDFInfo
- Publication number
- TWI359477B TWI359477B TW094122166A TW94122166A TWI359477B TW I359477 B TWI359477 B TW I359477B TW 094122166 A TW094122166 A TW 094122166A TW 94122166 A TW94122166 A TW 94122166A TW I359477 B TWI359477 B TW I359477B
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- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- relaxed
- substrate
- Prior art date
Links
- 238000002048 anodisation reaction Methods 0.000 title claims description 11
- 239000012212 insulator Substances 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 54
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 21
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 claims 1
- 235000011613 Pinus brutia Nutrition 0.000 claims 1
- 241000018646 Pinus brutia Species 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 124
- 239000000463 material Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 210000003050 axon Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000109 continuous material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000003248 secreting effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/883,887 US7172930B2 (en) | 2004-07-02 | 2004-07-02 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200616141A TW200616141A (en) | 2006-05-16 |
| TWI359477B true TWI359477B (en) | 2012-03-01 |
Family
ID=34969794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094122166A TWI359477B (en) | 2004-07-02 | 2005-06-30 | Strained silicon-on-insulator by anodization of a |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7172930B2 (enExample) |
| EP (1) | EP1779423A1 (enExample) |
| JP (1) | JP5089383B2 (enExample) |
| KR (1) | KR100961815B1 (enExample) |
| CN (1) | CN101120442A (enExample) |
| TW (1) | TWI359477B (enExample) |
| WO (1) | WO2006003061A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7172930B2 (en) * | 2004-07-02 | 2007-02-06 | International Business Machines Corporation | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
| US7235812B2 (en) * | 2004-09-13 | 2007-06-26 | International Business Machines Corporation | Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques |
| RU2331949C1 (ru) * | 2006-12-21 | 2008-08-20 | Институт физики полупроводников Сибирского отделения Российской академии наук | Способ получения структуры "кремний-на-изоляторе" |
| US7833884B2 (en) * | 2007-11-02 | 2010-11-16 | International Business Machines Corporation | Strained semiconductor-on-insulator by Si:C combined with porous process |
| US7772096B2 (en) * | 2008-07-10 | 2010-08-10 | International Machines Corporation | Formation of SOI by oxidation of silicon with engineered porosity gradient |
| JP5444899B2 (ja) * | 2008-09-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置の製造方法、および固体撮像装置の製造基板 |
| US20100221867A1 (en) * | 2009-05-06 | 2010-09-02 | International Business Machines Corporation | Low cost soi substrates for monolithic solar cells |
| US20120091100A1 (en) * | 2010-10-14 | 2012-04-19 | S.O.I.Tec Silicon On Insulator Technologies | Etchant for controlled etching of ge and ge-rich silicon germanium alloys |
| EP2498280B1 (en) | 2011-03-11 | 2020-04-29 | Soitec | DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof |
| US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
| US8975125B2 (en) | 2013-03-14 | 2015-03-10 | International Business Machines Corporation | Formation of bulk SiGe fin with dielectric isolation by anodization |
| US9590077B2 (en) | 2015-05-14 | 2017-03-07 | International Business Machines Corporation | Local SOI fins with multiple heights |
| US9385023B1 (en) | 2015-05-14 | 2016-07-05 | Globalfoundries Inc. | Method and structure to make fins with different fin heights and no topography |
| US9627536B2 (en) | 2015-06-25 | 2017-04-18 | International Busines Machines Corporation | Field effect transistors with strained channel features |
| US9559120B2 (en) | 2015-07-02 | 2017-01-31 | International Business Machines Corporation | Porous silicon relaxation medium for dislocation free CMOS devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104090A (en) * | 1977-02-24 | 1978-08-01 | International Business Machines Corporation | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation |
| JPS5831730B2 (ja) * | 1979-10-15 | 1983-07-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6469357B1 (en) * | 1994-03-23 | 2002-10-22 | Agere Systems Guardian Corp. | Article comprising an oxide layer on a GaAs or GaN-based semiconductor body |
| JPH0864674A (ja) * | 1994-08-04 | 1996-03-08 | Lg Semicon Co Ltd | 半導体素子の絶縁方法 |
| US6043166A (en) * | 1996-12-03 | 2000-03-28 | International Business Machines Corporation | Silicon-on-insulator substrates using low dose implantation |
| US6090689A (en) * | 1998-03-04 | 2000-07-18 | International Business Machines Corporation | Method of forming buried oxide layers in silicon |
| US5930643A (en) * | 1997-12-22 | 1999-07-27 | International Business Machines Corporation | Defect induced buried oxide (DIBOX) for throughput SOI |
| US6486037B2 (en) * | 1997-12-22 | 2002-11-26 | International Business Machines Corporation | Control of buried oxide quality in low dose SIMOX |
| US6376859B1 (en) * | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
| US6607948B1 (en) * | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
| US5950094A (en) | 1999-02-18 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating fully dielectric isolated silicon (FDIS) |
| TW591132B (en) * | 1999-06-17 | 2004-06-11 | Taiwan Semiconductor Mfg | Method of growing SiGe epitaxy |
| JP4212228B2 (ja) * | 1999-09-09 | 2009-01-21 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2003158075A (ja) * | 2001-08-23 | 2003-05-30 | Sumitomo Mitsubishi Silicon Corp | 半導体基板の製造方法及び電界効果型トランジスタの製造方法並びに半導体基板及び電界効果型トランジスタ |
| US7101772B2 (en) * | 2000-12-30 | 2006-09-05 | Texas Instruments Incorporated | Means for forming SOI |
| JP2002305293A (ja) * | 2001-04-06 | 2002-10-18 | Canon Inc | 半導体部材の製造方法及び半導体装置の製造方法 |
| US6602757B2 (en) * | 2001-05-21 | 2003-08-05 | International Business Machines Corporation | Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI |
| US6541356B2 (en) * | 2001-05-21 | 2003-04-01 | International Business Machines Corporation | Ultimate SIMOX |
| US6846727B2 (en) * | 2001-05-21 | 2005-01-25 | International Business Machines Corporation | Patterned SOI by oxygen implantation and annealing |
| US6855436B2 (en) * | 2003-05-30 | 2005-02-15 | International Business Machines Corporation | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal |
| US20020190318A1 (en) * | 2001-06-19 | 2002-12-19 | International Business Machines Corporation | Divot reduction in SIMOX layers |
| US6717213B2 (en) | 2001-06-29 | 2004-04-06 | Intel Corporation | Creation of high mobility channels in thin-body SOI devices |
| US7138649B2 (en) * | 2001-08-09 | 2006-11-21 | Amberwave Systems Corporation | Dual-channel CMOS transistors with differentially strained channels |
| KR100442105B1 (ko) * | 2001-12-03 | 2004-07-27 | 삼성전자주식회사 | 소이형 기판 형성 방법 |
| US6495429B1 (en) * | 2002-01-23 | 2002-12-17 | International Business Machines Corporation | Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing |
| KR100476901B1 (ko) * | 2002-05-22 | 2005-03-17 | 삼성전자주식회사 | 소이 반도체기판의 형성방법 |
| JP3873012B2 (ja) * | 2002-07-29 | 2007-01-24 | 株式会社東芝 | 半導体装置の製造方法 |
| FR2844634B1 (fr) * | 2002-09-18 | 2005-05-27 | Soitec Silicon On Insulator | Formation d'une couche utile relaxee a partir d'une plaquette sans couche tampon |
| JP4546021B2 (ja) * | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
| US6812116B2 (en) * | 2002-12-13 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
| JP4344517B2 (ja) * | 2002-12-27 | 2009-10-14 | 富士通株式会社 | 半導体基板及びその製造方法 |
| WO2004073043A2 (en) | 2003-02-13 | 2004-08-26 | Massachusetts Institute Of Technology | Semiconductor-on-insulator article and method of making same |
| WO2004073044A2 (en) * | 2003-02-13 | 2004-08-26 | Massachusetts Institute Of Technology | Finfet device and method to make same |
| US7329923B2 (en) * | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
| US7071052B2 (en) * | 2003-08-18 | 2006-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistor with reduced leakage |
| US7125458B2 (en) * | 2003-09-12 | 2006-10-24 | International Business Machines Corporation | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer |
| US7034362B2 (en) * | 2003-10-17 | 2006-04-25 | International Business Machines Corporation | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures |
| US7023055B2 (en) * | 2003-10-29 | 2006-04-04 | International Business Machines Corporation | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
| US7183593B2 (en) * | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
| US7202133B2 (en) * | 2004-01-21 | 2007-04-10 | Chartered Semiconductor Manufacturing, Ltd. | Structure and method to form source and drain regions over doped depletion regions |
| US7923782B2 (en) * | 2004-02-27 | 2011-04-12 | International Business Machines Corporation | Hybrid SOI/bulk semiconductor transistors |
| JP4177775B2 (ja) * | 2004-03-16 | 2008-11-05 | 株式会社東芝 | 半導体基板及びその製造方法並びに半導体装置 |
| US7087965B2 (en) * | 2004-04-22 | 2006-08-08 | International Business Machines Corporation | Strained silicon CMOS on hybrid crystal orientations |
| US7172930B2 (en) * | 2004-07-02 | 2007-02-06 | International Business Machines Corporation | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
| US7585792B2 (en) * | 2005-02-09 | 2009-09-08 | S.O.I.Tec Silicon On Insulator Technologies | Relaxation of a strained layer using a molten layer |
-
2004
- 2004-07-02 US US10/883,887 patent/US7172930B2/en not_active Expired - Fee Related
-
2005
- 2005-05-27 WO PCT/EP2005/052424 patent/WO2006003061A1/en not_active Ceased
- 2005-05-27 EP EP05752768A patent/EP1779423A1/en not_active Withdrawn
- 2005-05-27 JP JP2007518571A patent/JP5089383B2/ja not_active Expired - Fee Related
- 2005-05-27 CN CNA2005800225131A patent/CN101120442A/zh active Pending
- 2005-05-27 KR KR1020077000058A patent/KR100961815B1/ko not_active Expired - Fee Related
- 2005-06-30 TW TW094122166A patent/TWI359477B/zh not_active IP Right Cessation
-
2007
- 2007-01-06 US US11/620,663 patent/US7592671B2/en not_active Expired - Fee Related
-
2008
- 2008-07-21 US US12/176,624 patent/US20080277690A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20070111463A1 (en) | 2007-05-17 |
| EP1779423A1 (en) | 2007-05-02 |
| CN101120442A (zh) | 2008-02-06 |
| JP2008504704A (ja) | 2008-02-14 |
| TW200616141A (en) | 2006-05-16 |
| US7592671B2 (en) | 2009-09-22 |
| US20080277690A1 (en) | 2008-11-13 |
| US7172930B2 (en) | 2007-02-06 |
| WO2006003061A1 (en) | 2006-01-12 |
| KR100961815B1 (ko) | 2010-06-08 |
| JP5089383B2 (ja) | 2012-12-05 |
| US20060003555A1 (en) | 2006-01-05 |
| KR20070037483A (ko) | 2007-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |