CN101120442A - 通过阳极化埋置p+硅锗层获得的应变绝缘体上硅 - Google Patents

通过阳极化埋置p+硅锗层获得的应变绝缘体上硅 Download PDF

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Publication number
CN101120442A
CN101120442A CNA2005800225131A CN200580022513A CN101120442A CN 101120442 A CN101120442 A CN 101120442A CN A2005800225131 A CNA2005800225131 A CN A2005800225131A CN 200580022513 A CN200580022513 A CN 200580022513A CN 101120442 A CN101120442 A CN 101120442A
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China
Prior art keywords
semiconductor layer
layer
relaxed
semiconductor
doped
Prior art date
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Pending
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CNA2005800225131A
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English (en)
Chinese (zh)
Inventor
托马斯·N.·亚当
斯蒂芬·W.·贝戴尔
乔尔·P.·德索扎
基思·E.·佛格尔
亚历山大·雷茨尼采克
德温德拉·K.·萨达纳
加瓦姆·沙赫迪
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101120442A publication Critical patent/CN101120442A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
CNA2005800225131A 2004-07-02 2005-05-27 通过阳极化埋置p+硅锗层获得的应变绝缘体上硅 Pending CN101120442A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/883,887 US7172930B2 (en) 2004-07-02 2004-07-02 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer
US10/883,887 2004-07-02

Publications (1)

Publication Number Publication Date
CN101120442A true CN101120442A (zh) 2008-02-06

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Family Applications (1)

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CNA2005800225131A Pending CN101120442A (zh) 2004-07-02 2005-05-27 通过阳极化埋置p+硅锗层获得的应变绝缘体上硅

Country Status (7)

Country Link
US (3) US7172930B2 (enExample)
EP (1) EP1779423A1 (enExample)
JP (1) JP5089383B2 (enExample)
KR (1) KR100961815B1 (enExample)
CN (1) CN101120442A (enExample)
TW (1) TWI359477B (enExample)
WO (1) WO2006003061A1 (enExample)

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Also Published As

Publication number Publication date
WO2006003061A1 (en) 2006-01-12
KR20070037483A (ko) 2007-04-04
US20070111463A1 (en) 2007-05-17
TWI359477B (en) 2012-03-01
US20080277690A1 (en) 2008-11-13
JP2008504704A (ja) 2008-02-14
EP1779423A1 (en) 2007-05-02
US20060003555A1 (en) 2006-01-05
US7592671B2 (en) 2009-09-22
TW200616141A (en) 2006-05-16
KR100961815B1 (ko) 2010-06-08
US7172930B2 (en) 2007-02-06
JP5089383B2 (ja) 2012-12-05

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