KR100961723B1 - 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치 - Google Patents

스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치 Download PDF

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Publication number
KR100961723B1
KR100961723B1 KR1020080014343A KR20080014343A KR100961723B1 KR 100961723 B1 KR100961723 B1 KR 100961723B1 KR 1020080014343 A KR1020080014343 A KR 1020080014343A KR 20080014343 A KR20080014343 A KR 20080014343A KR 100961723 B1 KR100961723 B1 KR 100961723B1
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KR
South Korea
Prior art keywords
current
tunnel junction
current driver
magnetic tunnel
junction element
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Application number
KR1020080014343A
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English (en)
Korean (ko)
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KR20090089028A (ko
Inventor
신형순
이승연
이현주
이감영
Original Assignee
이화여자대학교 산학협력단
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Application filed by 이화여자대학교 산학협력단 filed Critical 이화여자대학교 산학협력단
Priority to KR1020080014343A priority Critical patent/KR100961723B1/ko
Priority to PCT/KR2008/005568 priority patent/WO2009104851A1/fr
Publication of KR20090089028A publication Critical patent/KR20090089028A/ko
Application granted granted Critical
Publication of KR100961723B1 publication Critical patent/KR100961723B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020080014343A 2008-02-18 2008-02-18 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치 KR100961723B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020080014343A KR100961723B1 (ko) 2008-02-18 2008-02-18 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치
PCT/KR2008/005568 WO2009104851A1 (fr) 2008-02-18 2008-09-19 Dispositif pour circuit magnéto-logique xor utilisant stt-mtj

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080014343A KR100961723B1 (ko) 2008-02-18 2008-02-18 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치

Publications (2)

Publication Number Publication Date
KR20090089028A KR20090089028A (ko) 2009-08-21
KR100961723B1 true KR100961723B1 (ko) 2010-06-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080014343A KR100961723B1 (ko) 2008-02-18 2008-02-18 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치

Country Status (2)

Country Link
KR (1) KR100961723B1 (fr)
WO (1) WO2009104851A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101562862B1 (ko) * 2013-09-30 2015-10-27 한국과학기술연구원 전자셔틀 메커니즘을 이용한 xor 논리회로
US10170172B2 (en) 2016-11-01 2019-01-01 Samsung Electronics Co., Ltd. Logic circuits including magnetic tunnel junction devices

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
US8508973B2 (en) * 2010-11-16 2013-08-13 Seagate Technology Llc Method of switching out-of-plane magnetic tunnel junction cells
CN107534082B (zh) * 2015-05-28 2021-12-28 英特尔公司 具有自旋轨道转矩效应的异或逻辑装置
KR101975878B1 (ko) * 2017-07-27 2019-05-08 한국과학기술연구원 전기화학적 포텐셜을 이용한 기능 재설정형 로직 소자
KR102023836B1 (ko) * 2018-02-05 2019-11-04 포항공과대학교 산학협력단 스핀 기반 뉴런 회로
US11349480B2 (en) * 2018-09-24 2022-05-31 Board Of Regents, The University Of Texas System Circuits based on magnetoelectric transistor devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6862228B2 (en) 2003-01-07 2005-03-01 Industrial Technology Research Institute High reliable reference current generator for MRAM
US20060002182A1 (en) 2004-06-30 2006-01-05 Stmicroelectronics, Inc. Multi-bit magnetic random access memory element
JP2007228574A (ja) 2006-02-22 2007-09-06 Samsung Electronics Co Ltd 磁気トンネル接合セルを利用した排他的論理和論理回路及び該論理回路の駆動方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3869682B2 (ja) * 2001-06-12 2007-01-17 株式会社ルネサステクノロジ 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6862228B2 (en) 2003-01-07 2005-03-01 Industrial Technology Research Institute High reliable reference current generator for MRAM
US20060002182A1 (en) 2004-06-30 2006-01-05 Stmicroelectronics, Inc. Multi-bit magnetic random access memory element
JP2007228574A (ja) 2006-02-22 2007-09-06 Samsung Electronics Co Ltd 磁気トンネル接合セルを利用した排他的論理和論理回路及び該論理回路の駆動方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101562862B1 (ko) * 2013-09-30 2015-10-27 한국과학기술연구원 전자셔틀 메커니즘을 이용한 xor 논리회로
US10170172B2 (en) 2016-11-01 2019-01-01 Samsung Electronics Co., Ltd. Logic circuits including magnetic tunnel junction devices

Also Published As

Publication number Publication date
KR20090089028A (ko) 2009-08-21
WO2009104851A1 (fr) 2009-08-27

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