KR100960188B1 - 유입부 플리넘을 구비한 고체 공급원 컨테이너 - Google Patents
유입부 플리넘을 구비한 고체 공급원 컨테이너 Download PDFInfo
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- KR100960188B1 KR100960188B1 KR20070104956A KR20070104956A KR100960188B1 KR 100960188 B1 KR100960188 B1 KR 100960188B1 KR 20070104956 A KR20070104956 A KR 20070104956A KR 20070104956 A KR20070104956 A KR 20070104956A KR 100960188 B1 KR100960188 B1 KR 100960188B1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001495 sodium tetrafluoroborate Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
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- Coating Apparatus (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
Claims (16)
- 저장용기내에 수용된 전구체 물질로부터 전구체-함유 유체 스트림을 운반하기 위한 저장용기로서:내부 체적부로서, 상기 내부 체적부가 상부 체적부와 하부 체적부로 구획되고, 상기 상부 체적부 및 하부 체적부는 유체 연통하며, 상기 하부 체적부는 전구체 물질을 수용하는, 내부 체적부;하나 이상의 운반체 가스를 상기 저장용기의 내부 체적부내로 지향시키는 유체 유입부, 유체 배출부, 및 내부 리세스를 포함하는 덮개로서, 상기 상부 체적부의 적어도 일부가 상기 내부 리세스내에 놓이는, 덮개;상부 립을 가지는 측벽으로서, 상기 상부 립의 적어도 일부가 상기 덮개와 접촉하는, 측벽;상기 덮개와 상기 측벽 사이에 놓이는 분리부재로서, 상기 분리부재가 상기 상부 립에 인접하여 위치되고 상기 내부 체적부를 상부 체적부와 하부 체적부로 구획하는, 분리부재; 그리고하나 이상의 운반체 가스를 분리부재를 통해서 그리고 전구체 물질을 향해서 지향시키기 위해, 상기 분리부재를 향하는 플리넘 챔버 개구부를 가지며 유체 유입부와 유체 연통하는 유입부 플리넘을 포함하는저장 용기.
- 제 1 항에 있어서,상기 유입부 플리넘이 상기 덮개의 하부 표면 및 상기 분리부재의 상부 표면과 접촉하여 하나 이상의 운반체 가스가 상기 분리부재를 통과하여 우회하는 것을 방지하도록, 상기 유입부 플리넘의 크기가 결정되는저장용기.
- 제 1 항에 있어서,상기 유입부 플리넘이 상기 덮개의 일부인저장용기.
- 제 1 항에 있어서,상기 유입부 플리넘이 원통 형상을 가지는저장용기.
- 제 4 항에 있어서,상기 플리넘 챔버가 상기 유입부 플리넘 보다 작은 크기의 원통 형상을 가지며, 하나 이상의 운반체 가스를 위한 배출 개구부를 포함하는저장용기.
- 제 1 항에 있어서,상기 분리부재가 필터를 포함하는저장용기.
- 제 5 항에 있어서,상기 분리부재가 상기 플리넘 챔버의 전체 배출 개구부를 덮는저장용기.
- 제 7 항에 있어서,상기 분리부재가 상기 하부 체적부내의 전구체 물질을 유체 배출부로부터 분리하는저장용기.
- 제 1 항에 있어서,상기 유체 배출부는 유입 단부가 T 형상인 통로를 포함하는저장용기.
- 제 9 항에 있어서,상기 유체 배출부의 유입 단부가 상기 통로의 횡단면에 대해 각도를 이루는 개구부들을 구비하는저장용기.
- 제 10 항에 있어서,상기 각도를 이루는 개구부들의 각각에 의해서 형성되는 평면이 상기 덮개의 상부 체적부의 내측 표면에 대해 접선을 이루는저장용기.
- 제 1 항에 있어서,상기 유체 유입부가, 유입부 플리넘의 측부에 대해, 축방향으로 상기 플리넘 챔버에 연결되는저장용기.
- 제 1 항에 있어서,상기 유체 유입부가, 유입부 플리넘의 중심에서, 축방향으로 상기 플리넘 챔버에 연결되는저장용기.
- 저장용기로부터 전구체의 가스 상을 포함하는 전구체-함유 유체 스트림을 분배하기 위한 방법으로서:분리부재에 의해 분리된 상부 체적부 및 하부 체적부를 포함하는 내부 체적부를 구비한 저장용기를 제공하는 단계로서, 상기 상부 체적부는 플리넘 챔버를 구비하는 유입부 플리넘을 가지는 유입부 및 "T" 형상의 오리피스를 가지는 배출부를 가지는 덮개를 포함하고, 상기 하부 체적부는 상부 립을 구비하는 측벽 및 상기 측벽에 연결된 베이스를 포함하며, 상기 상부 립의 적어도 일부가 상기 덮개와 접촉하는, 저장용기 제공 단계;상기 유입부를 통해 하나 이상의 운반체 가스를 저장용기내로 도입하는 단계로서, 상기 하나 이상의 운반체 가스가 상기 유입부 플리넘의 플리넘 챔버에 의해 분리부재를 통한 하향 유동으로 지향되며, 상기 하나 이상의 운반체 가스 및 전구체의 가스 상이 조합되어 유체 스트림을 형성하는, 하나 이상의 운반체 가스 도입 단계; 그리고상기 분리부재 및 "T" 형상 오리피스 배출부를 통해서 저장용기로부터 유체 스트림을 제거하고 하류의 증착 시스템으로 분배하는 단계를 포함하는전구체-함유 유체 스트림 분배 방법.
- 제 14 항에 있어서,상기 하나 이상의 운반체 가스가 상기 유입부로부터 상기 유입부 플리넘의 축방향을 따라 상기 유입부 플리넘 내로 유동하는전구체-함유 유체 스트림 분배 방법.
- 제 14 항에 있어서,상기 하나 이상의 운반체 가스가 상기 유입부로부터 방사상으로 상기 유입부 플리넘 내로 유동하는전구체-함유 유체 스트림 분배 방법.
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US11/867,171 US9109287B2 (en) | 2006-10-19 | 2007-10-04 | Solid source container with inlet plenum |
US11/867,171 | 2007-10-04 |
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