KR100956670B1 - 홀로그래픽 레티클을 제조하는 방법 - Google Patents

홀로그래픽 레티클을 제조하는 방법 Download PDF

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Publication number
KR100956670B1
KR100956670B1 KR1020087020900A KR20087020900A KR100956670B1 KR 100956670 B1 KR100956670 B1 KR 100956670B1 KR 1020087020900 A KR1020087020900 A KR 1020087020900A KR 20087020900 A KR20087020900 A KR 20087020900A KR 100956670 B1 KR100956670 B1 KR 100956670B1
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KR
South Korea
Prior art keywords
reticle
interference
pattern
optical system
diffraction grating
Prior art date
Application number
KR1020087020900A
Other languages
English (en)
Korean (ko)
Other versions
KR20080091263A (ko
Inventor
매튜 이. 한센
Original Assignee
에이에스엠엘 유에스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 유에스, 인크. filed Critical 에이에스엠엘 유에스, 인크.
Publication of KR20080091263A publication Critical patent/KR20080091263A/ko
Application granted granted Critical
Publication of KR100956670B1 publication Critical patent/KR100956670B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0065—Recording, reproducing or erasing by using optical interference patterns, e.g. holograms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
KR1020087020900A 2000-07-19 2001-07-19 홀로그래픽 레티클을 제조하는 방법 KR100956670B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21918700P 2000-07-19 2000-07-19
US60/219,187 2000-07-19

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020027003556A Division KR100886897B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법

Publications (2)

Publication Number Publication Date
KR20080091263A KR20080091263A (ko) 2008-10-09
KR100956670B1 true KR100956670B1 (ko) 2010-05-10

Family

ID=22818235

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020027003556A KR100886897B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법
KR1020087020900A KR100956670B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 제조하는 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020027003556A KR100886897B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법

Country Status (5)

Country Link
EP (1) EP1301830A2 (fr)
JP (1) JP4599029B2 (fr)
KR (2) KR100886897B1 (fr)
AU (1) AU2001278941A1 (fr)
WO (1) WO2002006899A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10131534B4 (de) * 2001-06-29 2007-07-19 Infineon Technologies Ag Verfahren zum Herstellen einer Maske zum Belichten
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
AT414285B (de) * 2004-09-28 2006-11-15 Femtolasers Produktions Gmbh Mehrfachreflexions-verzögerungsstrecke für einen laserstrahl sowie resonator bzw. kurzpuls-laservorrichtung mit einer solchen verzögerungsstrecke
CN114207530A (zh) * 2019-08-09 2022-03-18 Asml荷兰有限公司 在对准中用以减小标记大小的相位调制器
CN114174890A (zh) 2019-08-09 2022-03-11 Asml荷兰有限公司 量测装置及其相位调制器设备
GB2598604B (en) * 2020-09-04 2023-01-18 Envisics Ltd A holographic projector
US20230314185A1 (en) * 2022-03-31 2023-10-05 Apple Inc. Optical Sensor Module Including an Interferometric Sensor and Extended Depth of Focus Optics

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US3829219A (en) * 1973-03-30 1974-08-13 Itek Corp Shearing interferometer
JPS5597220A (en) * 1979-01-19 1980-07-24 Dainippon Printing Co Ltd Method of producing metal filter
JPS61190368A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 微細パタ−ンの形成方法
JP2922958B2 (ja) * 1990-02-13 1999-07-26 株式会社日立製作所 拡大投影露光方法及びその装置
JPH03263313A (ja) * 1990-03-13 1991-11-22 Mitsubishi Electric Corp 干渉露光装置
US5128530A (en) * 1991-05-28 1992-07-07 Hughes Aircraft Company Piston error estimation method for segmented aperture optical systems while observing arbitrary unknown extended scenes
JPH05217856A (ja) * 1992-01-31 1993-08-27 Fujitsu Ltd 露光方法及び露光装置
JPH08286009A (ja) * 1995-04-13 1996-11-01 Sumitomo Electric Ind Ltd チャープ格子形成装置
US6618174B2 (en) * 1996-11-15 2003-09-09 Diffraction, Ltd In-line holographic mask for micromachining
JPH10270330A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd パターン形成方法及び装置
JP4032501B2 (ja) * 1998-04-22 2008-01-16 株式会社ニコン 投影光学系の結像特性計測方法及び投影露光装置
JPH11354014A (ja) * 1998-06-08 1999-12-24 Ricoh Co Ltd 電界放射型電子源の作製方法
JP2000150347A (ja) * 1998-11-11 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
US6379868B1 (en) * 1999-04-01 2002-04-30 Agere Systems Guardian Corp. Lithographic process for device fabrication using dark-field illumination

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
High-resolution holographic image projection at visible and ultraviolet wavelength, Ross I. N. et al., Applied Optics 27(5) pp.967-972 (1988)*

Also Published As

Publication number Publication date
JP4599029B2 (ja) 2010-12-15
WO2002006899A2 (fr) 2002-01-24
AU2001278941A1 (en) 2002-01-30
KR20020072531A (ko) 2002-09-16
KR100886897B1 (ko) 2009-03-05
KR20080091263A (ko) 2008-10-09
EP1301830A2 (fr) 2003-04-16
JP2004504634A (ja) 2004-02-12
WO2002006899A3 (fr) 2002-06-20

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