KR100942084B1 - 금속 커패시터 및 그의 제조방법 - Google Patents
금속 커패시터 및 그의 제조방법 Download PDFInfo
- Publication number
- KR100942084B1 KR100942084B1 KR1020080009816A KR20080009816A KR100942084B1 KR 100942084 B1 KR100942084 B1 KR 100942084B1 KR 1020080009816 A KR1020080009816 A KR 1020080009816A KR 20080009816 A KR20080009816 A KR 20080009816A KR 100942084 B1 KR100942084 B1 KR 100942084B1
- Authority
- KR
- South Korea
- Prior art keywords
- metal member
- metal
- electrode
- groove forming
- lead
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 234
- 239000002184 metal Substances 0.000 title claims abstract description 234
- 239000003990 capacitor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 41
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 210
- 238000000034 method Methods 0.000 claims description 44
- 230000000149 penetrating effect Effects 0.000 claims description 43
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 238000007772 electroless plating Methods 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Chemical compound [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000002048 anodisation reaction Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012778 molding material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 239000003792 electrolyte Substances 0.000 abstract description 12
- 239000007769 metal material Substances 0.000 abstract description 6
- -1 Member Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 description 15
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000779 smoke Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070105715 | 2007-10-19 | ||
| KR20070105715 | 2007-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090040195A KR20090040195A (ko) | 2009-04-23 |
| KR100942084B1 true KR100942084B1 (ko) | 2010-02-12 |
Family
ID=40567541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080009816A KR100942084B1 (ko) | 2007-10-19 | 2008-01-30 | 금속 커패시터 및 그의 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100942084B1 (zh) |
| CN (1) | CN101414510B (zh) |
| WO (1) | WO2009051296A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110326073B (zh) * | 2017-03-24 | 2021-09-21 | 株式会社村田制作所 | 电容器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010022757A (ko) * | 1998-06-09 | 2001-03-26 | 오하시 미츠오 | 고체 전해 콘덴서용 전극박, 그 제조방법 및 고체 전해콘덴서 |
| KR20010102031A (ko) * | 1999-02-18 | 2001-11-15 | 오하시 미츠오 | 고체전해 콘덴서 및 그 제조방법 |
| JP2006222333A (ja) | 2005-02-14 | 2006-08-24 | Sanyo Electric Co Ltd | 固体電解コンデンサ及びその製造方法 |
| KR100779263B1 (ko) * | 2007-02-06 | 2007-11-27 | 오영주 | 무극성 금속 전해 커패시터 및 그의 제조방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469325A (en) * | 1993-03-22 | 1995-11-21 | Evans Findings Co. | Capacitor |
| JP4505774B2 (ja) * | 1999-02-18 | 2010-07-21 | 株式会社村田製作所 | 固体電解コンデンサ及びその製造方法 |
| US6934143B2 (en) * | 2003-10-03 | 2005-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal capacitor structure |
| JP2006261455A (ja) * | 2005-03-17 | 2006-09-28 | Fujitsu Ltd | 半導体装置およびｍｉｍキャパシタ |
-
2008
- 2008-01-16 WO PCT/KR2008/000270 patent/WO2009051296A1/en active Application Filing
- 2008-01-30 KR KR1020080009816A patent/KR100942084B1/ko active IP Right Grant
- 2008-06-17 CN CN200810126676XA patent/CN101414510B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010022757A (ko) * | 1998-06-09 | 2001-03-26 | 오하시 미츠오 | 고체 전해 콘덴서용 전극박, 그 제조방법 및 고체 전해콘덴서 |
| KR20010102031A (ko) * | 1999-02-18 | 2001-11-15 | 오하시 미츠오 | 고체전해 콘덴서 및 그 제조방법 |
| JP2006222333A (ja) | 2005-02-14 | 2006-08-24 | Sanyo Electric Co Ltd | 固体電解コンデンサ及びその製造方法 |
| KR100779263B1 (ko) * | 2007-02-06 | 2007-11-27 | 오영주 | 무극성 금속 전해 커패시터 및 그의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009051296A1 (en) | 2009-04-23 |
| KR20090040195A (ko) | 2009-04-23 |
| CN101414510B (zh) | 2011-04-20 |
| CN101414510A (zh) | 2009-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8004821B2 (en) | Metal capacitor and manufacturing method thereof | |
| US7826195B2 (en) | Metal capacitor and manufacturing method thereof | |
| US8203823B2 (en) | Metal capacitor and manufacturing method thereof | |
| US8159811B2 (en) | Metal capacitor and manufacturing method thereof | |
| US7965492B2 (en) | Metal capacitor and manufacturing method thereof | |
| US8116062B2 (en) | Metal capacitor to improve electric conductivity | |
| KR100958458B1 (ko) | 금속 커패시터 및 그의 제조방법 | |
| KR100942084B1 (ko) | 금속 커패시터 및 그의 제조방법 | |
| KR100958460B1 (ko) | 금속 커패시터 및 그의 제조방법 | |
| KR101013239B1 (ko) | 금속 커패시터 및 그의 제조방법 | |
| KR100942121B1 (ko) | 금속 커패시터 | |
| KR100958457B1 (ko) | 금속 커패시터 | |
| WO2009091090A1 (en) | Metal capacitor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20121227 Year of fee payment: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20140204 Year of fee payment: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20150122 Year of fee payment: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20160128 Year of fee payment: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20170203 Year of fee payment: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20180125 Year of fee payment: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20190129 Year of fee payment: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20200130 Year of fee payment: 11 |