KR100929768B1 - 비-진동 접촉 전위차 센서와 제어되는 조명을 이용하는반도체 검사 시스템 및 장치 - Google Patents

비-진동 접촉 전위차 센서와 제어되는 조명을 이용하는반도체 검사 시스템 및 장치 Download PDF

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KR100929768B1
KR100929768B1 KR1020080018060A KR20080018060A KR100929768B1 KR 100929768 B1 KR100929768 B1 KR 100929768B1 KR 1020080018060 A KR1020080018060 A KR 1020080018060A KR 20080018060 A KR20080018060 A KR 20080018060A KR 100929768 B1 KR100929768 B1 KR 100929768B1
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probe
wafer
semiconductor
potential difference
contact potential
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KR20080082457A (ko
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제프리 앨런 호손
엠. 브랜든 스틸
예유안 양
마크 슐츠
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큐셉트 테크놀로지스 인크.
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020080018060A 2007-03-07 2008-02-28 비-진동 접촉 전위차 센서와 제어되는 조명을 이용하는반도체 검사 시스템 및 장치 Expired - Fee Related KR100929768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/715,149 2007-03-07
US11/715,149 US7659734B2 (en) 2007-03-07 2007-03-07 Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination

Publications (2)

Publication Number Publication Date
KR20080082457A KR20080082457A (ko) 2008-09-11
KR100929768B1 true KR100929768B1 (ko) 2009-12-03

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Country Status (6)

Country Link
US (1) US7659734B2 (enExample)
EP (1) EP1944614A1 (enExample)
JP (1) JP4783801B2 (enExample)
KR (1) KR100929768B1 (enExample)
CN (1) CN101266222A (enExample)
TW (1) TWI346776B (enExample)

Cited By (2)

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KR20250115173A (ko) 2024-01-23 2025-07-30 주식회사 코비스테크놀로지 웨이퍼 높이 변화에 따른 전위차 센서 높이 자동 조절 기능을 갖는 반도체 표면 오염 검사장치
KR20250115168A (ko) 2024-01-23 2025-07-30 에스케이하이닉스 주식회사 다중 전위차 센서를 이용한 반도체 표면 오염 검사장치

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US20170266744A1 (en) * 2015-10-30 2017-09-21 Mitsubishi Electric Corporation Wire electric discharge machine, control method of control device of wire electric discharge machine, and positioning method
CN108760885A (zh) * 2018-06-14 2018-11-06 德淮半导体有限公司 超声波扫描方法和超声波扫描装置
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US11924972B2 (en) * 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
KR102873562B1 (ko) * 2024-09-04 2025-10-21 주식회사 코비스테크놀로지 다중 측정 센서를 포함하는 나선형 스캔 장치 및 이를 이용한 웨이퍼 검사 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250115173A (ko) 2024-01-23 2025-07-30 주식회사 코비스테크놀로지 웨이퍼 높이 변화에 따른 전위차 센서 높이 자동 조절 기능을 갖는 반도체 표면 오염 검사장치
KR20250115168A (ko) 2024-01-23 2025-07-30 에스케이하이닉스 주식회사 다중 전위차 센서를 이용한 반도체 표면 오염 검사장치

Also Published As

Publication number Publication date
EP1944614A1 (en) 2008-07-16
KR20080082457A (ko) 2008-09-11
JP4783801B2 (ja) 2011-09-28
TW200846650A (en) 2008-12-01
TWI346776B (en) 2011-08-11
US7659734B2 (en) 2010-02-09
JP2008304452A (ja) 2008-12-18
CN101266222A (zh) 2008-09-17
US20080217530A1 (en) 2008-09-11

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Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171126