JP4783801B2 - 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 - Google Patents

非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 Download PDF

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JP4783801B2
JP4783801B2 JP2008057715A JP2008057715A JP4783801B2 JP 4783801 B2 JP4783801 B2 JP 4783801B2 JP 2008057715 A JP2008057715 A JP 2008057715A JP 2008057715 A JP2008057715 A JP 2008057715A JP 4783801 B2 JP4783801 B2 JP 4783801B2
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wafer
contamination
potential difference
semiconductor
irradiation energy
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JP2008304452A5 (enExample
JP2008304452A (ja
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ジェフリー・アラン・ホーソーン
エム・ブランドン・スティール
イェユアン・ヤン
マーク・シュルツェ
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キューセプト・テクノロジーズ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2008057715A 2007-03-07 2008-03-07 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置 Expired - Fee Related JP4783801B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/715,149 2007-03-07
US11/715,149 US7659734B2 (en) 2007-03-07 2007-03-07 Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination

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JP2008304452A JP2008304452A (ja) 2008-12-18
JP2008304452A5 JP2008304452A5 (enExample) 2009-03-12
JP4783801B2 true JP4783801B2 (ja) 2011-09-28

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JP2008057715A Expired - Fee Related JP4783801B2 (ja) 2007-03-07 2008-03-07 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置

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US (1) US7659734B2 (enExample)
EP (1) EP1944614A1 (enExample)
JP (1) JP4783801B2 (enExample)
KR (1) KR100929768B1 (enExample)
CN (1) CN101266222A (enExample)
TW (1) TWI346776B (enExample)

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Also Published As

Publication number Publication date
EP1944614A1 (en) 2008-07-16
KR20080082457A (ko) 2008-09-11
TW200846650A (en) 2008-12-01
TWI346776B (en) 2011-08-11
US7659734B2 (en) 2010-02-09
JP2008304452A (ja) 2008-12-18
KR100929768B1 (ko) 2009-12-03
CN101266222A (zh) 2008-09-17
US20080217530A1 (en) 2008-09-11

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