KR100914116B1 - 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 - Google Patents

하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 Download PDF

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Publication number
KR100914116B1
KR100914116B1 KR1020070110847A KR20070110847A KR100914116B1 KR 100914116 B1 KR100914116 B1 KR 100914116B1 KR 1020070110847 A KR1020070110847 A KR 1020070110847A KR 20070110847 A KR20070110847 A KR 20070110847A KR 100914116 B1 KR100914116 B1 KR 100914116B1
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frame
subfield
charged particle
region
particle beam
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KR20080040587A (ko
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슈우이찌 다마무시
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
KR1020070110847A 2006-11-02 2007-11-01 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 Active KR100914116B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00298357 2006-11-02
JP2006298357A JP4932433B2 (ja) 2006-11-02 2006-11-02 電子ビーム描画装置及び電子ビーム描画方法

Publications (2)

Publication Number Publication Date
KR20080040587A KR20080040587A (ko) 2008-05-08
KR100914116B1 true KR100914116B1 (ko) 2009-08-27

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KR1020070110847A Active KR100914116B1 (ko) 2006-11-02 2007-11-01 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법

Country Status (4)

Country Link
US (1) US7800084B2 (https=)
JP (1) JP4932433B2 (https=)
KR (1) KR100914116B1 (https=)
TW (1) TWI373692B (https=)

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JP5525739B2 (ja) 2008-09-16 2014-06-18 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
JP5484808B2 (ja) * 2008-09-19 2014-05-07 株式会社ニューフレアテクノロジー 描画装置及び描画方法
JP5204687B2 (ja) * 2009-02-18 2013-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP5586183B2 (ja) * 2009-07-15 2014-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP2011199279A (ja) * 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
JP2012043972A (ja) * 2010-08-19 2012-03-01 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5662756B2 (ja) 2010-10-08 2015-02-04 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5809419B2 (ja) 2011-02-18 2015-11-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5792513B2 (ja) * 2011-05-20 2015-10-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5896775B2 (ja) 2012-02-16 2016-03-30 株式会社ニューフレアテクノロジー 電子ビーム描画装置および電子ビーム描画方法
TWI489222B (zh) 2012-02-16 2015-06-21 紐富來科技股份有限公司 Electron beam rendering device and electron beam rendering method
JP5970213B2 (ja) 2012-03-19 2016-08-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013201239A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 描画パターン形成方法、描画データ生成方法および描画データ生成装置
NL2011276A (en) 2012-09-06 2014-03-10 Asml Netherlands Bv Inspection method and apparatus and lithographic processing cell.
EP2757571B1 (en) * 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
US9443699B2 (en) 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
JP7124763B2 (ja) 2019-02-27 2022-08-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
CN112882353B (zh) * 2021-01-28 2021-11-30 清华大学 一种基于柔性纳米伺服运动系统的扫描电镜直写光刻系统
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032188A (ja) * 1996-07-17 1998-02-03 Toshiba Corp 荷電ビーム描画装置
JPH11274036A (ja) 1998-03-23 1999-10-08 Toshiba Corp 荷電ビーム描画装置
KR20030073862A (ko) * 2002-03-13 2003-09-19 주식회사 하이닉스반도체 전자빔 노광 장비를 이용한 노광 공정에서의 스티칭 에러방지방법
KR20040014061A (ko) * 2002-08-09 2004-02-14 삼성전자주식회사 전자 빔 리소그래피 방법

Family Cites Families (7)

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JP3454983B2 (ja) * 1995-08-25 2003-10-06 株式会社東芝 荷電ビーム描画方法
US6313476B1 (en) * 1998-12-14 2001-11-06 Kabushiki Kaisha Toshiba Charged beam lithography system
JP3422948B2 (ja) * 1999-03-25 2003-07-07 株式会社東芝 荷電ビーム描画方法
JP4313145B2 (ja) * 2003-10-07 2009-08-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
KR100580646B1 (ko) * 2004-02-25 2006-05-16 삼성전자주식회사 전자빔 노광 방법
JP2007043078A (ja) * 2005-07-04 2007-02-15 Nuflare Technology Inc 描画装置及び描画方法
JP4948948B2 (ja) * 2006-09-15 2012-06-06 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画装置の評価方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032188A (ja) * 1996-07-17 1998-02-03 Toshiba Corp 荷電ビーム描画装置
JPH11274036A (ja) 1998-03-23 1999-10-08 Toshiba Corp 荷電ビーム描画装置
KR20030073862A (ko) * 2002-03-13 2003-09-19 주식회사 하이닉스반도체 전자빔 노광 장비를 이용한 노광 공정에서의 스티칭 에러방지방법
KR20040014061A (ko) * 2002-08-09 2004-02-14 삼성전자주식회사 전자 빔 리소그래피 방법

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Publication number Publication date
TW200830058A (en) 2008-07-16
JP2008117871A (ja) 2008-05-22
US7800084B2 (en) 2010-09-21
JP4932433B2 (ja) 2012-05-16
TWI373692B (en) 2012-10-01
US20080105827A1 (en) 2008-05-08
KR20080040587A (ko) 2008-05-08

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