KR100893028B1 - Semiconductor device package and method for manufacturing semiconductor device packaging - Google Patents

Abstract

The present invention discloses a semiconductor device package and a method of manufacturing the same, which can prevent deterioration and circuit damage by easily dissipating heat generated as the electronic device component becomes smaller to the outside. The disclosed invention provides a concave-convex package in which a ground terminal is formed for contact with external PCB circuits; Mounting a semiconductor device chip in the concave-convex package by a flip chip method; Forming a thermal conductive film having a high thermal conductivity on a surface of the semiconductor device chip mounted in the uneven package; And attaching a heat dissipation cap for encapsulating the concave-convex package in which the semiconductor device chip is embedded while being in contact with the thermal conductive film formed on the semiconductor device chip.

Semiconductors, Heat Dissipation, Thermal Conductive Film, Saw, Duplexer, Chip, Package

Description

Semiconductor device package and manufacturing method therefor {SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE PACKAGING}

1A to 1C illustrate a typical saw duplexer package manufacturing process.

2A-2E illustrate a saw duplexer package chip fabrication process in accordance with the present invention.

Figure 3 is a view showing the surface structure of the heat dissipation cap used in the present invention.

* Description of the symbols for the main parts of the drawings *

11: Saw duplexer chip 13: bump

15: uneven package 16: connection pattern

17: ground terminal 18: thermal conductive film

20: heat dissipation cap 21: heat sink

22: ground pad 23: insulator

The present invention provides a semiconductor device package and a method of manufacturing the semiconductor device package which can prevent deterioration, circuit damage, and malfunction of the device by more easily dissipating heat generated from the semiconductor device mounted inside the package to the outside. And to a method for producing the same.

Background Art In recent years, with the development of mobile communication systems, mobile communication devices such as mobile phones and portable information terminals are rapidly spreading, and parts are miniaturized and high in performance in accordance with the demand for miniaturization and high performance of these devices.

In addition, two types of wireless communication systems, analog and digital, are used in mobile telephones, and the frequencies used for wireless communication are in the 800 MHz to 1 GHz band and the 1.5 GHz to 2.0 GHz band.

Components such as SAW duplexers, called surface acoustic wave splitters, and power amplifier modules (PAMs) that supply power to transmit signals when communicating are miniaturized and used.

In particular, the SAW duplexer is manufactured in one package chip in a communication device and another electronic device, and combines a SAW filter which is a band pass filter. The SAW filter includes a lateral SAW filter having two interdigital transducers (IDTs) arranged at a predetermined distance on a piezoelectric substrate, and a SAW resonator filter constituting a resonator on the piezoelectric substrate.

As SAW resonator filters, a single-sided reflection SAW resonator filter is known that uses shear horizontal surface acoustic waves such as love waves, Bleustein-Gulyaev-Shimuzu (BBS) waves, and other similar waves.                         

In the above-described saw-duplexer, a mobile communication device represented by a mobile phone is used as a filter for minimizing mutual interference to simultaneously transmit and receive a signal, and is composed of a transmission filter and a reception filter. Each filter is formed on the piezoelectric element such as LiNbO3 and the like to the input converter for converting the mechanical vibration to the mechanical vibration and an output converter for converting the mechanical vibration into an electrical signal and output to the load. In the input converter and the output converter, comb-shaped aluminum electrodes are formed to be spaced apart from each other by a predetermined distance.

In addition, in the case of the saw duplexer as described above, it is divided into a saw filter unit and a phase shifter and mounted in a package manufactured by an HTCC or LTCC process. As a result of the miniaturization of mobile communication devices, a technology for manufacturing a small chip form has been developed. have.

The HTCC high temperature fired ceramic substrate manufacturing process is generally used in SAW filter packages, TCXO packages, PGA packages used in computer CPU modes, and the like.

In the HTCC process, baking is performed at a high temperature of 1300-1500 ° C., and internal electrodes are also used for reducing atmosphere metals such as molybdenum (Mo) and tungsten (W), and are not used in the high frequency band due to the properties of the internal electrodes and ceramics. .

In order to complement the manufacturing process of the HTCC, a process for manufacturing a package at low temperature has been developed, which is an LTCC manufacturing process.

The LTCC is a method that overcomes the limitations of the physical properties of the electrode material and the ceramic material, which is a problem of the HTCC process, since a low temperature process can be used, a metal having excellent conductivity can be used. At the same time, the co-fire process technology, which fires, is applied, thereby achieving integration and miniaturization.

Glass-based or mixed ceramic-based substrates can be pressed and fired to metal-clad substrates at around 800-1,000 ° C and are well suited for high-frequency passive device fabrication.

The substrate material used in the LTCC is a glass ceramic material capable of low-temperature firing, and the internal electrode uses metals such as silver, copper, and gold, which have high electrical conductivity and require low-temperature firing.

1A to 1C are views illustrating a general saw duplexer package manufacturing process.

As shown in Fig. 1A, the saw filter chip 1, which is a surface acoustic wave element, is mounted on a concave-convex package 5 formed of a dielectric material such as ceramic by a flip chip method. Although wire bonding has been conventionally performed after mounting on the saw filter chip 1 terminals, a conductive bump 3 is attached to the terminals of the saw filter chip in order to be mounted by a flip chip method. It was made to be able to bond together with mounting in (5).

Ground terminals 7 are formed on both side walls of the concave-convex package 5 to form an electrical coupling with an external PCB, and the ground terminals 7 form via holes formed on both side walls of the concave-convex package 5. Accordingly, the connection pattern 6 is formed to allow electrical contact with the internal circuit pattern.

As shown in FIG. 1B, the saw filter chip 5 is mounted inside the uneven package 5 by a flip chip method while the bumps 3 are attached to the terminals of the saw filter chip 1. . Then, the circuits inside the uneven package 5 and the terminals of the saw filter chip 1 are electrically coupled with the bump 3 interposed therebetween.

 Then, as shown in FIG. 1C, the cap 10 is encapsulated in order to prevent the saw filter chip 1 mounted in the concave-convex package 5 from external impact, moisture proof, vibration, and the like.

As described above, not only the saw duplexer but also other electronic component devices are manufactured in the form of a single package chip by a flip chip method, thereby reducing the height of the package chip by reducing the height of the package chip.

However, as the semiconductor devices are integrated and miniaturized as described above, the heat generated from the devices may not be easily dissipated to the outside.

In particular, SAW filters and power amplification modules, which are surface acoustic wave splitters, generate a lot of heat during the transmission process, but because they are manufactured with miniaturization, the heat emission area is small, which may cause malfunctions and damage to devices. There is a problem that can be.

The present invention provides a semiconductor device package capable of easily dissipating heat to the outside during operation of a semiconductor device package that is miniaturized and integrated, and prevents damage to external devices from moisture, vibration, and shock. It is an object of the present invention to provide a device package and a method of manufacturing the same.

In order to achieve the above object, the semiconductor device package manufacturing method according to the present invention,

Providing a concave-convex package having a ground terminal formed for contact with external PCB circuits;

Mounting a semiconductor device chip in the concave-convex package by a flip chip method;

Forming a thermal conductive film having a high thermal conductivity on a surface of the semiconductor device chip mounted in the uneven package; And

And attaching a heat dissipation cap for encapsulating the concave-convex package in which the semiconductor device chip is embedded while being in contact with the thermal conductive film formed on the semiconductor device chip.

Here, the thermal conductive film is Al, Au, Ag, Cu-based metal having a high thermal conductivity, the heat dissipation cap is a ground pad to be in electrical contact with the heat sink and the circuit terminals are bonded to the heat conductive film for heat dissipation The heat sink is characterized in that a plurality of irregularities are formed on the surface of the heat sink to increase the heat dissipation area.

The semiconductor device chip may be a duplexer chip.                     

In addition, the semiconductor chip package according to the present invention,

An uneven package having a ground terminal for contact with an external circuit terminal;

A semiconductor device chip mounted in a flip chip method inside the uneven package;

A thermal conductive film attached on the surface of the semiconductor device chip for thermal conductivity; And

And a heat dissipation cap disposed on the heat conductive film and dissipating heat generated from the semiconductor device chip to the outside.

The semiconductor device chip may be a duplexer chip.

According to the present invention, by attaching a heat sink capable of heat dissipation to the outside to the semiconductor device package to be miniaturized and integrated there is an effect that can be prevented from damage due to deterioration of the embedded device.

In addition, there is an advantage that the heat sink is a cap that can prevent damage to the device embedded in the package from external moisture, vibration, shock.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A to 2E are views illustrating a saw duplexer package chip manufacturing process according to the present invention.

As shown in FIG. 2A, a concave-convex package 15 for mounting the saw duplexer chip 11 is provided, and bumps 13 are attached to terminals on the saw duplexer chip 11.                     

When the saw duplexer chip 11 is mounted in the uneven package 15, the bump 13 electrically couples the connection patterns 16 connected to the circuits within the package.

On both walls of the uneven package 15, a ground terminal 17 for electrical contact with an external PCB is formed. In addition, the ground terminal 17 is electrically connected by inserting a conductive metal into a via hole formed in the uneven package 15.

Therefore, as shown in FIG. 2B, when the saw duplexer chip 11 is mounted on the groove of the uneven package 15, the terminals of the saw duplexer chip 11 are bumped by the bump 13. 15 is electrically connected to the connection patterns 16 connected to the circuits formed on the grooves.

Although not clearly shown in the drawings, a phase converter is integrally formed with the package at the bottom of the uneven package 15. This is because in general, when the uneven package 15 is manufactured integrally by the same manufacturing method.

Then, as shown in FIG. 2C, when the saw duplexer chip 11 is mounted on the groove of the uneven package 15, the thermal conductive film is configured to dissipate heat generated from the saw duplexer chip 11 to the outside. (18) is formed on the saw duplexer chip (11).

In the drawing, the saw duplexer chip 11 is mounted on the uneven package 15 and then the thermal conductive film 18 is coated. However, the saw duplexer chip 11 is first mounted on the saw duplexer chip 11 before mounting. The thermal conductive film 18 may be coated and mounted.

The thermal conductive film 18 is prepared by mixing a metal having excellent conductivity such as Au, Al, Cu, Ag, etc. with an adhesive. In addition, the thermal conductive film 18 is coated to be applied to the entire area on the saw duplexer chip 11, in order to increase the area where the heat generated from the chip is conducted so that a lot of heat can be moved. to be.

When the thermal conductive film 18 is formed, as shown in FIG. 2D, the heat dissipation cap 20 may be connected to the uneven package 15 to dissipate heat generated from the saw duplexer chip 11 to the outside. Combine.

As shown in FIGS. 2D and 3, the heat dissipation cap 20 is formed with a heat dissipation plate 21 having an area corresponding to the heat conductive film 18 at the center thereof, and a ground pad 22 is formed at an outer circumference thereof. It is. Therefore, the heat sink 21 of the heat dissipation cap 20 is bonded to the heat conductive film 18 formed on the saw duplexer chip 11 to be fixed.

Therefore, the heat dissipation cap 20 is connected to the saw duplexer chip 11 by the heat dissipation plate 21 and electrically connected to the circuit pad terminals of the ground pads 22 and the uneven package 15. To be contacted.

When the heat dissipation cap 20 is attached to the heat dissipation cap 20, the heat dissipation cap 20 is mounted on the PCB or another circuit board to point downward.

That is, the heat dissipation cap 20 may be electrically contacted with the ground pads 22 and the terminals of the external circuit board so that signals may be input and output.

3 is a view showing the surface structure of the heat dissipation cap used in the present invention.                     

As shown in FIG. 3, the heat dissipation cap 20 is composed of a heat dissipation plate 21 and a ground pad 22. The heat dissipation plate 21 is formed of a metal plate having excellent thermal conductivity, and has a large heat dissipation area. In order to make the surface was prepared in an uneven form.

In addition, the heat dissipation plate 21 of the heat dissipation cap 20 is bonded to a heat conductive film formed on the saw duplexer chip mounted in the uneven package to release heat generated from the saw duplexer chip to the outside.

Ground pads 22 are formed along the outer circumference of the heat dissipation cap 20. The ground pad formed a ground terminal by drilling a region to form the ground pad 22 in an insulator 23 made of ceramic material.

Accordingly, the ground pad 22 is coupled to the uneven package, and the contact portion of the ground pad 22 is in electrical contact with circuit terminals of the uneven package connected by the via hole.

Therefore, the heat dissipation cap 20 may serve to seal the package as well as heat dissipation of the built-in saw duplexer chip.

As described in detail above, the present invention has an effect of preventing damage due to deterioration of the embedded device by attaching a heat sink capable of heat dissipation to the outside of the semiconductor device package to be miniaturized and integrated.

In addition, there is an advantage that the heat sink is a cap that can prevent damage to the device embedded in the package from external moisture, vibration, shock.                     

The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.

Claims (7)

Providing a concave-convex package having a ground terminal formed for contact with external PCB circuits; Mounting a semiconductor device chip on a recess of the uneven package by a flip chip method; Forming a thermal conductive film on a surface of the semiconductor device chip; And Attaching with a heat dissipation cap to enclose a recess of the concave-convex package in which the semiconductor device chip is embedded, so that a pad formed around the outer side of the heat dissipation cap is in electrical contact with another circuit terminal; Semiconductor device package manufacturing method comprising a. The method of claim 1, The thermal conductive film is Al, Au, Ag, Cu-based metal having high thermal conductivity, The center of the heat dissipation cap semiconductor device package manufacturing method comprising a heat dissipation plate bonded to the thermal conductive film for heat dissipation. The method according to claim 1 or 2, The pad of the heat dissipation cap is formed on an insulator, and a semiconductor device package manufacturing method comprising a plurality of ground pads that are in contact with the circuit terminal of the external PCB and the circuit terminal of the uneven package. An uneven package having a ground terminal for contact with an external circuit terminal; A semiconductor device chip mounted on a recess of the uneven package by a flip chip method; A thermal conductive film attached on the surface of the semiconductor device chip for thermal conductivity; And A heat dissipation cap disposed on the heat conductive film and dissipating heat generated from the semiconductor device chip to the outside; And a plurality of pads contacted to other circuit terminals around an outer circumference of the heat dissipation cap. The method of claim 4, wherein The outer side of the heat dissipation cap is formed of an insulator formed of a ceramic material, The pad of the heat dissipation cap is formed in the pad forming region of the insulator is a semiconductor device package, characterized in that contact with the circuit terminal of the uneven package and the circuit terminal of the external PCB. The method according to claim 4 or 5, A semiconductor device package including a heat sink in contact with the heat conductive film in the center of the heat dissipation cap. The method according to claim 4 or 5, The semiconductor device chip, characterized in that the duplexer chip.

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