WO2022183831A1 - Radio frequency module system-in-package structure and method for manufacturing same, and electronic device - Google Patents

Radio frequency module system-in-package structure and method for manufacturing same, and electronic device Download PDF

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Publication number
WO2022183831A1
WO2022183831A1 PCT/CN2021/143208 CN2021143208W WO2022183831A1 WO 2022183831 A1 WO2022183831 A1 WO 2022183831A1 CN 2021143208 W CN2021143208 W CN 2021143208W WO 2022183831 A1 WO2022183831 A1 WO 2022183831A1
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WO
WIPO (PCT)
Prior art keywords
radio frequency
frequency module
filter chip
chip
package structure
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Application number
PCT/CN2021/143208
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French (fr)
Chinese (zh)
Inventor
陆春荣
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青岛歌尔智能传感器有限公司
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Publication of WO2022183831A1 publication Critical patent/WO2022183831A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0237Disposition of the redistribution layers
    • H01L2224/02373Layout of the redistribution layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0237Disposition of the redistribution layers
    • H01L2224/02381Side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/03Manufacturing methods

Definitions

  • the present application relates to the technical field of packaging, and in particular, to a system-level packaging structure of a radio frequency module, a manufacturing method thereof, and an electronic device.
  • SAW Surface acoustic wave filters
  • BAW bulk acoustic wave filters
  • the main purpose of the present application is to provide a system-in-package structure of a radio frequency module, which aims to improve the integration degree of the radio frequency module.
  • the RF module system-level packaging structure proposed in this application includes:
  • the filter chip is arranged on the first surface, and a first gap is formed between the filter chip and the first surface;
  • the passive element is arranged on the first surface and is arranged spaced apart from the filter chip;
  • the flexible plastic sealing film is attached to the first surface, the surface of the filter chip and the passive element, and surrounds the filter chip to form a first cavity;
  • the material of the flexible plastic film is semi-solid resin; and/or,
  • the thickness of the flexible plastic sealing film is 40 ⁇ m ⁇ 50 ⁇ m.
  • the value of the first void ranges from 20 ⁇ m to 40 ⁇ m.
  • it also includes an amplifier chip and/or a converter chip, the amplifier chip and/or the converter chip are arranged between the first surface and the plastic packaging layer, and are respectively connected with the filter chip.
  • the device chip and passive components are spaced apart.
  • the first surface is provided with first solder paste balls
  • the flexible plastic film is provided with avoidance holes for exposing the first solder paste balls
  • the amplifier chip and/or the converter chip pass through the first solder paste ball.
  • the escape hole is fixedly connected with the first solder paste ball.
  • the substrate includes a main body and a solder resist layer disposed on the surface of the main body, an internal circuit is formed inside the main body, and a plurality of second solder paste balls are connected to the internal circuit.
  • the paste balls are exposed on the solder resist layer and are used for connecting with the filter chip and passive components.
  • the RF module system-in-package structure further includes a shielding layer, and the shielding layer covers the surface of the plastic sealing layer.
  • the substrate further includes a second surface disposed opposite to the first surface, and the second surface is provided with external pads.
  • an electronic device comprising a housing and a system-in-package structure of a radio frequency module disposed in the housing, and the system-in-package structure of the radio frequency module is the above-mentioned combined type sensor.
  • a method for fabricating a system-level packaging structure of a radio frequency module comprising the following steps:
  • Film plastic sealing is performed on the first surface to form a flexible plastic sealing film covering the first surface and the filter chip, and the flexible plastic sealing film, the filter chip and the first surface are enclosed to form a first cavity;
  • a second plastic sealing is performed to form a plastic sealing layer covering the flexible plastic sealing film and the passive element.
  • the method further includes:
  • Metal sputtering is performed to form a shielding layer covering the plastic encapsulation layer.
  • the RF module system-level packaging structure of the technical solution of the present application includes a substrate, a filter chip and a passive element arranged on the substrate, and also includes a flexible plastic film and a plastic layer covering the filter chip and the passive element.
  • a flexible plastic film and a plastic layer covering the filter chip and the passive element.
  • the plastic packaging layer can further ensure the packaging stability of the filter chip and passive components.
  • the system-level packaging structure of the radio frequency module enables the filter chip to perform circuit adaptation with passive components in one packaging structure, the structure is simple, and the loss of the radio frequency signal is effectively reduced, thereby improving the efficiency of the radio frequency.
  • FIG. 1 is a cross-sectional view of an embodiment of a system-in-package structure of a radio frequency module of the present application
  • FIG. 2 is a cross-sectional view of another embodiment of a system-in-package structure of a radio frequency module of the present application
  • FIG. 3 is a flowchart of an embodiment of a method for fabricating a system-in-package structure of a radio frequency module of the present application
  • 4 to 8 are structural cross-sectional views of the manufacturing method of the system-in-package structure of the radio frequency module shown in FIG. 3 during the manufacturing process;
  • 9 to 12 are cross-sectional views of another embodiment of the RF module system-in-package structure of the present application during the fabrication process;
  • the terms “connected”, “fixed” and the like should be understood in a broad sense, for example, “fixed” may be a fixed connection, a detachable connection, or an integrated; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two elements or an interaction relationship between the two elements, unless otherwise explicitly defined.
  • “fixed” may be a fixed connection, a detachable connection, or an integrated; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two elements or an interaction relationship between the two elements, unless otherwise explicitly defined.
  • the present application proposes a system-in-package structure 100 for a radio frequency module.
  • a system-in-package structure 100 of a radio frequency module includes:
  • the filter chip 30 is disposed on the first surface 117, and a first gap is formed between the filter chip 30 and the first surface 117;
  • a passive element 50, the passive element 50 is arranged on the first surface 117 and is arranged spaced apart from the filter chip 30;
  • the flexible plastic sealing film 70 is attached to the first surface 117 , the surface of the filter chip 30 and the passive element 50 , and is enclosed with the filter chip 30 to form a first void cavity 30a;
  • the plastic sealing layer 90 covers the flexible plastic sealing film 70 .
  • the filter chip 30 in the system-in-package structure 100 of the radio frequency module may be a surface acoustic wave filter chip 30 (SAW chip) or a bulk acoustic wave filter chip 30 (BAW), which is not limited here. .
  • SAW chip surface acoustic wave filter chip
  • BAW bulk acoustic wave filter chip 30
  • there are two filter chips 30 which are a surface acoustic wave filter chip 30 and a bulk acoustic wave filter chip 30 respectively.
  • the passive element 50 may be various types of elements such as capacitors and resistors, the number of which may be one or more, and can be matched with the filter chip 30 in a circuit.
  • the material of the flexible plastic film 70 is semi-solid resin, which has good flexibility and stretchability, and has a certain viscosity.
  • the first surface 117 has good adhesion and fit, thereby preventing foreign objects from entering the first cavity 30a and affecting the vibrator in the filter chip 30 and ensuring the normal operation of the filter chip 30 .
  • the plastic encapsulation layer 90 is a structure formed by a plastic encapsulation process in the existing structure, and its material may be epoxy resin, etc., which will not be described in detail here.
  • the flexible plastic film 70 has a low modulus, which is smaller than the modulus of the plastic sealing layer 90 , and can absorb the pressure of the plastic sealing layer 90 , thereby reducing the risk of cracking of the filter chip 30 having the first cavity 30 a and realizing the tight wrapping fixed role.
  • the RF module system-in-package structure 100 of the technical solution of the present application includes a substrate 10 , a filter chip 30 and a passive element 50 disposed on the substrate 10 , and also includes a flexible plastic film 70 and a plastic seal covering the filter chip 30 and the passive element 50 .
  • Layer 90, the flexible plastic film 70 can have a better fit with the substrate 10 compared to the existing rigid packaging materials, so that it can adapt to chips or passive components 50 of various sizes, and package them into the same
  • the integration degree of the radio frequency module is effectively improved, space is saved, and cost is reduced.
  • the plastic packaging layer 90 can further ensure the packaging stability of the filter chip 30 and the passive element 50 .
  • the RF module system level packaging structure 100 enables the filter chip 30 and the passive element 50 to perform circuit adaptation in one packaging structure, the structure is simple, the loss of the RF signal is effectively reduced, and the RF efficiency is improved.
  • the substrate 10 includes a main body 11 and a solder resist layer 13 disposed on the surface of the main body 11 , an internal circuit 113 is formed inside the main body 11 , and the internal circuit 113 is connected with a plurality of first Two solder paste balls 115 .
  • the second solder paste balls 115 are exposed on the solder resist layer 13 and are used for connecting with the filter chip 30 and the passive element 50 .
  • the substrate 10 is a PCB board, which includes a main body 11 and a solder resist layer 13 disposed on the surface of the main body 11 , and the main body 11 can be a ceramic substrate, for example, HTTC (High Temperature Cermeric Carrier, high temperature sintered ceramic substrate 10), or an organic matrix, which is not limited here.
  • the body 11 After the body 11 is provided, it has a first surface 117 and a second surface 119 arranged opposite to each other.
  • an internal circuit 113 is formed inside the body 11 through the cooperation of the via hole and the copper tube, which is used to connect the chips and components arranged on the first surface 117.
  • the electrical signals of the device go to the second surface 119 which is configured to be electrically connected to the device to which it is applied to transmit the electrical signals of the filter chip 30 .
  • the second surface 119 is provided with external pads, so as to facilitate direct soldering in external devices.
  • the solder resist layer 13 is the green paint solder resist layer 13 , which can prevent interference between a plurality of solder joints for connecting various components, and the surface of the solder resist layer 13 can be set as the first surface 117 .
  • the second solder paste ball 115 is connected, and the second here is only for convenience and corresponding to the above, and has no meaning of order. Since the solder resist layer 13 is not conductive, the second solder paste balls 115 need to be exposed on the solder resist layer 13 so as to be electrically connected to the external filter chip 30 and the passive element 50 , which can be formed on the body 11 by printing.
  • the fixing of the filter chip 30 enables the Bump (bump) process and the SMT (Surface Mounting) process to be integrated into one, which effectively reduces the packaging cost.
  • the material of the second solder paste balls 115 can be selected from a high melting point material, such as SnCu, with a melting point of about 230°C, which can effectively reduce the amount of the second solder paste balls 115 when the RF module system-in-package structure 100 performs client reflow. melted, so as to avoid the situation that the second solder paste balls 115 flow and short-circuit due to the expansion and extrusion of the plastic sealing layer 90 , thereby further ensuring the stability of the RF module system-level packaging structure 100 .
  • a high melting point material such as SnCu
  • the value of the first void ranges from 20 ⁇ m to 40 ⁇ m.
  • the value of the first gap is the vertical distance between the filter chip 30 and the first surface 117 , and the vertical distance is affected by the height of the second solder paste balls 115 , that is, the height of the second solder paste balls 115 .
  • the value of the first void is larger, and when the height of the second solder paste ball 115 is smaller, the value of the first void is also smaller.
  • the value of the first gap should not be too large, otherwise the mounting of the filter chip 30 is not stable enough, and it is easy for the plastic sealing liquid to flow into the first gap, thereby affecting the vibrator.
  • the value of the first void cannot be too small, otherwise, the fatigue resistance of the solder paste ball will be poor, and the reliability of the solder paste ball will be affected. Therefore, the value range of the first gap is set here to be 20 ⁇ m ⁇ 40 ⁇ m, which can improve the reliability of solder balls while ensuring the effective operation of the filter chip 30, and further improve the stability and reliability of the system-level packaging structure 100 of the RF module. work performance.
  • the thickness of the flexible plastic sealing film 70 is 40 ⁇ m ⁇ 50 ⁇ m.
  • the thickness of the flexible plastic sealing film 70 should not be too small.
  • the thickness of the film 70 should not be too large. Therefore, the thickness range of the flexible plastic film 70 is set to be 40 ⁇ m to 50 ⁇ m. The filter chip 30 and the passive component 50 are effectively fixed, thereby improving the structural stability of the RF module system-in-package structure 100 .
  • the passive element 50 may be mounted on the first surface 117 after being plastic-sealed with the plastic film, so that the plastic film does not cover the passive element 50 , and the plastic film 90 makes the passive element 50 not covered.
  • the passive element 50 is fixed firmly.
  • the filter chip 30 and the passive element 50 are packaged in the above structure.
  • the RF module system-in-package structure 100 further includes an amplifier chip 20 and/or a converter
  • the amplifier chip 20 and/or the converter chip 20 are arranged between the first surface 117 and the plastic encapsulation layer 90, and are respectively arranged at intervals from the filter chip 30 and the passive element 50 .
  • the package structure further includes an amplifier chip 20 and/or a converter chip 20 (switch), and the amplifier chip 20 may be an LNA (Low Noise Amplify, low noise amplifier) or PA (Power Amplify, power amplifier).
  • the transmitter module mainly includes the filter chip 30, PA and Switch
  • the receiver module generally includes the filter chip 30, LNA and Switch, so as to realize The function of sending and receiving waves and converting them.
  • only one amplifier chip 20 may be arranged in the RF module system-in-package structure 100, and it may be arranged between the first surface 117 and the plastic sealing layer 90, that is, the amplifier chip 20 may be covered by a plastic sealing film.
  • the amplifier chip 20 can also be mounted after the plastic packaging film is plastic-sealed, which is not limited here. In this way, whether in the receiver module or in the transmitter module, the filter chip 30 and more related components are integrated into one package structure, which can further reduce the loss of the video signal and improve the RF mode. group efficiency.
  • the converter chip 20 may also be provided in the above-mentioned RF module system-in-package structure 100; or both the amplifier chip 20 and the converter chip 20 may be provided in the RF module system-in-package structure 100 .
  • the first surface 117 is provided with first solder paste balls 111
  • the flexible plastic film 70 is provided with avoidance holes for exposing the first solder paste balls 111 .
  • the amplifier chip 20 and/or the converter chip 20 are fixedly connected to the first solder paste balls 111 through the avoidance holes 71 .
  • the flexible plastic film 70 covers the filter chip 30 and the passive element 50 .
  • the amplifier chip 20 and/or the converter chip 20 are mounted.
  • the flexible plastic film 70 is subjected to hole processing to form avoidance holes 71 for exposing the first solder paste balls 111.
  • the size of the avoidance holes 71 can be set according to the actual situation. , to ensure that the liquid can be effectively filled between the plurality of first solder paste balls 111 when the subsequent plastic sealing layer 90 is plastically sealed to form a stable structure.
  • solder resist layer 13 on the substrate 10 can also be perforated, so that the plastic encapsulation liquid can enter the bottom of the converter chip 20 or the amplifier chip 20 to be connected with the substrate 10 to increase the structural stability sex.
  • the RF module system-in-package structure 100 further includes a shielding layer 80 , and the shielding layer 80 covers the surface of the plastic sealing layer 90 .
  • a shielding layer 80 is provided on the surface of the plastic sealing layer 90, and the shielding layer 80 can be plated on the surface of the plastic sealing layer 90 by a sputtering process. and extend to the side of the substrate 10 .
  • the material of the shielding layer 80 can be copper (Cu) or stainless steel (SUS, Steel Use Stainless), or double sputtering, which can improve the shielding effect and also facilitate the conduction of heat in the plastic sealing layer 90 . out, thereby improving the heat dissipation performance.
  • the present application also proposes an electronic device (not shown), which includes a housing and a system-in-package structure 100 for a radio frequency module disposed in the housing.
  • an electronic device (not shown), which includes a housing and a system-in-package structure 100 for a radio frequency module disposed in the housing.
  • the radio frequency module system-level packaging structure 100 of the electronic device adopts all the technical solutions of the above-mentioned embodiments, it has at least all the functions brought by the technical solutions of the above-mentioned embodiments, and will not be repeated here.
  • the electronic device may be a wearable electronic device, such as a smart watch or a wristband, or a mobile terminal, such as a mobile phone or a notebook computer, or an electronic device with radio frequency requirements such as a TV set, which is not limited here.
  • a wearable electronic device such as a smart watch or a wristband
  • a mobile terminal such as a mobile phone or a notebook computer
  • an electronic device with radio frequency requirements such as a TV set, which is not limited here.
  • the present application further proposes a manufacturing method of a system-in-package structure 100 of a radio frequency module.
  • the structure of the system-in-package structure 100 of a radio frequency module also refers to the system-in-package of a radio frequency module in the above-mentioned embodiment.
  • Structure 100 in one embodiment, the fabrication method includes the following steps:
  • Step S1 providing a substrate 10 , and printing a plurality of spaced solder paste balls on the first surface 117 of the substrate 10 in advance;
  • the substrate 10 includes a body 11 and a solder resist layer 13 . Internal circuits 113 have been formed in the body 11 , and several spaced solder paste balls are printed on the first surface 117 of the substrate 10 .
  • the material of the solder paste balls is SnCu with a high melting point, with a melting point of about 230°C, which can effectively reduce the melting of the solder paste balls when the RF module system-level packaging structure 100 performs client reflow, thereby avoiding the expansion and extrusion of the plastic sealing layer 90 .
  • the situation occurs that the second solder paste balls 115 flow and short-circuit due to the pressure.
  • Step S2 attaching the filter chip 30 to at least one of the solder paste balls, the filter chip 30 and the first surface 117 forming a first gap;
  • the height of the solder paste ball used for mounting with the filter chip 30 should be guaranteed to reach 45 ⁇ m ⁇ 65 ⁇ m after curing. Only after the filter chip 30 is connected can the space of the first gap be ensured, thereby ensuring the working performance of the filter.
  • one filter chip 30 is SAW
  • the other filter is FBAR, which is a kind of bulk acoustic wave filter chip 30 .
  • Step S3 film plastic sealing is performed on the first surface 117 to form a flexible plastic sealing film 70 covering the first surface 117 and the filter chip 30 , and the flexible plastic sealing film 70 , the filter chip 30 and the first surface 117 are enclosed to form the first cavity 30a;
  • the material of the flexible plastic film 70 is semi-solid resin, which has good flexibility and stretchability, and has a certain viscosity.
  • a surface 117 has good adhesion and fit.
  • the flexible plastic film 70 is attached to the outer peripheral surface of the filter chip 30 , specifically the upper surface and the four side surfaces, and attached to the first surface 117 , thereby sealing the periphery of the first gap of the filter chip 30 , the first cavity 30a is formed to ensure that the vibrator of the filter chip 30 works normally.
  • Step S41 slot the flexible plastic film 70 to expose the unconnected solder paste balls, and mount the passive component 50 on the substrate 10 .
  • the flexible plastic film 70 is slotted by laser to form avoidance holes 71 to expose the solder paste balls that need to be connected to the passive element 50 .
  • the size is set to ensure the stability of its installation and fixation.
  • the solder resist layer 13 of the substrate 10 can also be grooved to increase the space for film flow. For example, when the height of the solder paste ball is 20 ⁇ m, the solder resist layer 13 The height is 40 ⁇ m, so as to obtain a filling height of 60 ⁇ m, which can effectively prevent the occurrence of plastic encapsulation voids and improve the structural stability of the passive element 50 .
  • Step S5 performing a second plastic sealing to form a plastic sealing layer 90 covering the flexible plastic sealing film 70 and the passive element 50;
  • the formation of the plastic encapsulation layer 90 is the same as that of the conventional plastic encapsulation process, and the material of the plastic encapsulation layer 90 can be selected from epoxy resin.
  • the above-mentioned flexible plastic film 70 has a low modulus, which is smaller than the modulus of the plastic layer 90, it can absorb the pressure of the plastic layer 90, thereby reducing the risk of cracking of the filter chip 30 having the first cavity 30a, and improving the RF mode.
  • step S6 is also included after step S5: metal sputtering is performed to form a shielding layer 80 covering the plastic sealing layer 90;
  • the material of the shielding layer 80 can be selected from Cu or stainless steel (SUS, Steel Use Stainless), or by double sputtering, so as to improve the shielding effect, and at the same time, it can also help to export the heat in the plastic encapsulation layer 90, so as to improve the shielding effect. Improve thermal performance.
  • the shielding layer 80 in addition to covering the plastic encapsulation layer 90 , the shielding layer 80 also needs to extend to the side surface of the substrate 10 , so as to be able to be electrically connected to the internal circuit 113 to achieve an effective shielding function.
  • the passive component 50 and the filter chip 30 can also be mounted together, and then the flexible plastic film 70 is plastic-encapsulated, so that the passive component 50 can also be improved.
  • Fixed stability of element 50 In this way, laser drilling is not required, which further simplifies the process, reduces the cost, and improves the packaging stability of the system-level packaging structure 100 of the radio frequency module.
  • the RF module system-in-package structure 100 further includes the converter chip 20 and/or the amplifier chip 20
  • the installation of the two also requires laser drilling of the flexible plastic film 70.
  • the converter chip 20 and/or the amplifier chip 20 and the passive element 50 are mounted together, which can also simplify the process and reduce the cost. Since the size of the converter chip 20 and/or the amplifier chip 20 is generally large, when the laser is used for grooving, the solder resist layer 13 is also drilled to improve the structural stability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

Disclosed are a radio frequency module system-in-package structure and a method for manufacturing same, and an electronic device. The radio frequency module system-in-package structure comprises a substrate, a filter chip, a passive element, a flexible plastic encapsulation film and a plastic encapsulation layer, wherein the substrate has a first surface; the filter chip is arranged on the first surface, and forms a first gap with the first surface; the passive element is arranged on the first surface and is spaced apart from the filter chip; the flexible plastic encapsulation film is attached to the first surface, a surface of the filter chip and a surface of the passive element, and encloses a first cavity with the filter chip; and the plastic encapsulation layer covers the flexible plastic encapsulation film.

Description

射频模组系统级封装结构及其制作方法和电子设备System-in-package structure of radio frequency module and its manufacturing method and electronic device
本申请要求于2021年3月1号申请的、申请号为202110228132.X的中国专利申请的优先权,其全部内容通过引用结合于此。This application claims the priority of the Chinese patent application filed on March 1, 2021 with application number 202110228132.X, the entire contents of which are incorporated herein by reference.
技术领域technical field
本申请涉及封装技术领域,特别涉及一种射频模组系统级封装结构及其制作方法和电子设备。The present application relates to the technical field of packaging, and in particular, to a system-level packaging structure of a radio frequency module, a manufacturing method thereof, and an electronic device.
背景技术Background technique
传统的滤波器封装一般会采用晶圆级滤波器封装,声表面波滤波器(SAW)或体声波滤波器(BAW)倒装在陶瓷基板或有机基板上,再采用聚合薄膜和片状树脂一次压合产生成空腔,可以实现滤波器的电能和机械能之间的转换。但上述封装因聚合薄膜和片状树脂的材质较硬,一次压合产生成空腔时封装作业性差,一般只能单颗封装,不能集成有电容电阻、放大器、转换器等其他器件,实现不了系统级封装。Traditional filter packages generally use wafer-level filter packages. Surface acoustic wave filters (SAW) or bulk acoustic wave filters (BAW) are flip-chipped on ceramic substrates or organic substrates, and then a polymer film and sheet resin are used once. The pressing is produced into a cavity, which can realize the conversion between the electrical energy and the mechanical energy of the filter. However, due to the hard materials of the polymer film and sheet resin, the packaging workability is poor when a cavity is formed by one-time pressing. Generally, only a single package can be used, and other devices such as capacitors, resistors, amplifiers, and converters cannot be integrated, which cannot be realized. system-in-package.
技术问题technical problem
本申请的主要目的是提供一种射频模组系统级封装结构,旨在提高射频模组集成度的问题。The main purpose of the present application is to provide a system-in-package structure of a radio frequency module, which aims to improve the integration degree of the radio frequency module.
技术解决方案technical solutions
为实现上述目的,本申请提出的射频模组系统级封装结构包括:In order to achieve the above-mentioned purpose, the RF module system-level packaging structure proposed in this application includes:
基板,所述基板具有第一表面;a substrate having a first surface;
滤波器芯片,所述滤波器芯片设于所述第一表面,并与所述第一表面之间形成有第一空隙;a filter chip, the filter chip is arranged on the first surface, and a first gap is formed between the filter chip and the first surface;
被动元件,所述被动元件设于所述第一表面,并与所述滤波器芯片间隔设置;a passive element, the passive element is arranged on the first surface and is arranged spaced apart from the filter chip;
柔性塑封膜,所述柔性塑封膜贴设于所述第一表面、所述滤波器芯片及所述被动元件的表面,并与所述滤波器芯片围合形成第一空腔;及a flexible plastic sealing film, the flexible plastic sealing film is attached to the first surface, the surface of the filter chip and the passive element, and surrounds the filter chip to form a first cavity; and
塑封层,所述塑封层覆盖所述柔性塑封膜。and a plastic sealing layer covering the flexible plastic sealing film.
在一实施方式中,所述柔性塑封膜的材质为半固态树脂;和/或,In one embodiment, the material of the flexible plastic film is semi-solid resin; and/or,
所述柔性塑封膜的厚度为40μm~50μm。The thickness of the flexible plastic sealing film is 40 μm˜50 μm.
在一实施方式中,所述第一空隙的数值范围为20μm~40μm。In one embodiment, the value of the first void ranges from 20 μm to 40 μm.
在一实施方式中,还包括放大器芯片和/或转换器芯片,所述放大器芯片和/或所述转换器芯片设于所述第一表面与所述塑封层之间,并分别与所述滤波器芯片和被动元件间隔设置。In one embodiment, it also includes an amplifier chip and/or a converter chip, the amplifier chip and/or the converter chip are arranged between the first surface and the plastic packaging layer, and are respectively connected with the filter chip. The device chip and passive components are spaced apart.
在一实施方式中,所述第一表面设有第一锡膏球,所述柔性塑封膜开设有裸露所述第一锡膏球的避让孔,所述放大器芯片和/或转换器芯片通过所述避让孔与所述第一锡膏球固定连接。In one embodiment, the first surface is provided with first solder paste balls, the flexible plastic film is provided with avoidance holes for exposing the first solder paste balls, and the amplifier chip and/or the converter chip pass through the first solder paste ball. The escape hole is fixedly connected with the first solder paste ball.
在一实施方式中,所述基板包括本体和设于所述本体表面的阻焊层,所述本体内部形成有内部线路,所述内部线路连接有若干第二锡膏球,所述第二锡膏球裸露于所述阻焊层,用于与所述滤波器芯片和被动元件连接。In one embodiment, the substrate includes a main body and a solder resist layer disposed on the surface of the main body, an internal circuit is formed inside the main body, and a plurality of second solder paste balls are connected to the internal circuit. The paste balls are exposed on the solder resist layer and are used for connecting with the filter chip and passive components.
在一实施方式中,所述射频模组系统级封装结构还包括屏蔽层,所述屏蔽层覆盖于所述塑封层的表面。In one embodiment, the RF module system-in-package structure further includes a shielding layer, and the shielding layer covers the surface of the plastic sealing layer.
在一实施方式中,所述基板还包括与所述第一表面相对设置的第二表面,所述第二表面设有外接焊盘。In one embodiment, the substrate further includes a second surface disposed opposite to the first surface, and the second surface is provided with external pads.
根据本申请的另一方面,还提出一种电子设备,包括壳体和设于所述壳体内的射频模组系统级封装结构,所述射频模组系统级封装结构为如上所述的组合式传感器。According to another aspect of the present application, an electronic device is also proposed, comprising a housing and a system-in-package structure of a radio frequency module disposed in the housing, and the system-in-package structure of the radio frequency module is the above-mentioned combined type sensor.
根据本申请的又一方面,又提出一种射频模组系统级封装结构的制作方法,包括以下步骤:According to yet another aspect of the present application, a method for fabricating a system-level packaging structure of a radio frequency module is proposed, comprising the following steps:
提供一基板,预先在所述基板的第一表面印刷若干间隔的锡膏球;providing a substrate, and printing a plurality of spaced solder paste balls on the first surface of the substrate in advance;
将滤波器芯片贴设于所述锡膏球中的至少一个,所述滤波器芯片与所述第一表面形成第一空隙;attaching a filter chip to at least one of the solder paste balls, and forming a first gap between the filter chip and the first surface;
对第一表面进行薄膜塑封,形成覆盖第一表面和滤波器芯片的柔性塑封膜,所述柔性塑封膜、所述滤波器芯片及第一表面围合形成第一空腔;Film plastic sealing is performed on the first surface to form a flexible plastic sealing film covering the first surface and the filter chip, and the flexible plastic sealing film, the filter chip and the first surface are enclosed to form a first cavity;
对柔性塑封膜进行开槽,裸露出未连接的锡膏球,将被动元件贴装于所述基板上;Slotting the flexible plastic film, exposing the unconnected solder paste balls, and mounting the passive components on the substrate;
进行第二次塑封,形成覆盖所述柔性塑封膜和所述被动元件的塑封层。A second plastic sealing is performed to form a plastic sealing layer covering the flexible plastic sealing film and the passive element.
在一实施方式中,在所述进行第二次塑封,形成覆盖所述柔性塑封膜和所述被动元件的塑封层的步骤之后,还包括:In one embodiment, after the step of performing the second plastic encapsulation to form a plastic encapsulation layer covering the flexible plastic encapsulation film and the passive element, the method further includes:
进行金属溅镀,形成覆盖所述塑封层的屏蔽层。Metal sputtering is performed to form a shielding layer covering the plastic encapsulation layer.
有益效果beneficial effect
本申请技术方案的射频模组系统级封装结构包括基板和设于基板上的滤波器芯片以及被动元件,还包括覆盖滤波器芯片和被动元件的柔性塑封膜和塑封层,该柔性塑封膜相比于现有的硬质封装材料,可与基板有较好的贴合度,从而能够适应各种不同尺寸的芯片或被动元件,将其封装到同一基板上,有效提高射频模组的集成度,并节约空间,降低成本。同时,塑封层能够进一步保证滤波器芯片和被动元件的封装稳定性。该射频模组系统级封装结构使滤波器芯片能够与被动元件在一个封装结构内进行电路适配,结构简单,有效降低射频信号的损耗,从而提高射频的效率。The RF module system-level packaging structure of the technical solution of the present application includes a substrate, a filter chip and a passive element arranged on the substrate, and also includes a flexible plastic film and a plastic layer covering the filter chip and the passive element. Compared with the existing hard packaging materials, it can have a good fit with the substrate, so that it can adapt to various sizes of chips or passive components, and package them on the same substrate, effectively improving the integration of the RF module. And save space and reduce costs. At the same time, the plastic packaging layer can further ensure the packaging stability of the filter chip and passive components. The system-level packaging structure of the radio frequency module enables the filter chip to perform circuit adaptation with passive components in one packaging structure, the structure is simple, and the loss of the radio frequency signal is effectively reduced, thereby improving the efficiency of the radio frequency.
附图说明Description of drawings
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图示出的结构获得其他的附图。In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained according to the structures shown in these drawings without any creative effort.
图1为本申请射频模组系统级封装结构一实施例的剖视图;1 is a cross-sectional view of an embodiment of a system-in-package structure of a radio frequency module of the present application;
图2为本申请射频模组系统级封装结构另一实施例的剖视图;2 is a cross-sectional view of another embodiment of a system-in-package structure of a radio frequency module of the present application;
图3为本申请射频模组系统级封装结构的制作方法一实施例的流程图;FIG. 3 is a flowchart of an embodiment of a method for fabricating a system-in-package structure of a radio frequency module of the present application;
图4~图8为图3中所示射频模组系统级封装结构的制作方法在制作过程中的结构剖视图;4 to 8 are structural cross-sectional views of the manufacturing method of the system-in-package structure of the radio frequency module shown in FIG. 3 during the manufacturing process;
图9~图12为本申请射频模组系统级封装结构另一实施例制作过程中的剖视图;9 to 12 are cross-sectional views of another embodiment of the RF module system-in-package structure of the present application during the fabrication process;
附图标号说明:Description of reference numbers:
100 100 射频模组系统级封装结构 RF Module System-in-Package Structure 15 15 外接焊盘 External pad
10 10 基板 substrate 20 20 转换器芯片(放大器芯片) Converter chip (amplifier chip)
11 11 本体 ontology 30 30 滤波器芯片 filter chip
111 111 第一锡膏球 first solder paste ball 30a 30a 第一空腔 first cavity
113 113 内部线路 Internal wiring 50 50 被动元件 passive components
115 115 第二锡膏球 Second solder paste ball 70 70 柔性塑封膜 Flexible plastic film
117 117 第一表面 first surface 71 71 避让孔 Avoid holes
119 119 第二表面 second surface 80 80 屏蔽层 Shield
13 13 阻焊层 Solder mask 90 90 塑封层 Plastic layer
本申请目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。The realization, functional characteristics and advantages of the purpose of the present application will be further described with reference to the accompanying drawings in conjunction with the embodiments.
本发明的实施方式Embodiments of the present invention
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
需要说明,本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relationship between various components under a certain posture (as shown in the accompanying drawings). The relative positional relationship, the movement situation, etc., if the specific posture changes, the directional indication also changes accordingly.
在本申请中,除非另有明确的规定和限定,术语“连接”、“固定”等应做广义理解,例如,“固定”可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系,除非另有明确的限定。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。In this application, unless otherwise expressly specified and limited, the terms "connected", "fixed" and the like should be understood in a broad sense, for example, "fixed" may be a fixed connection, a detachable connection, or an integrated; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two elements or an interaction relationship between the two elements, unless otherwise explicitly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific situations.
另外,在本申请中如涉及“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本申请要求的保护范围之内。In addition, descriptions such as "first", "second", etc. in this application are only for descriptive purposes, and should not be construed as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, a feature delimited with "first", "second" may expressly or implicitly include at least one of that feature. In addition, the technical solutions between the various embodiments can be combined with each other, but must be based on the realization by those of ordinary skill in the art. When the combination of technical solutions is contradictory or cannot be realized, it should be considered that the combination of such technical solutions does not exist. , is not within the scope of protection claimed in this application.
本申请提出一种射频模组系统级封装结构100。The present application proposes a system-in-package structure 100 for a radio frequency module.
请参照图1,在本申请一实施例中,射频模组系统级封装结构100包括:Referring to FIG. 1 , in an embodiment of the present application, a system-in-package structure 100 of a radio frequency module includes:
基板10,所述基板10具有第一表面117;a substrate 10 having a first surface 117;
滤波器芯片30,所述滤波器芯片30设于所述第一表面117,并与所述第一表面117之间形成有第一空隙;a filter chip 30, the filter chip 30 is disposed on the first surface 117, and a first gap is formed between the filter chip 30 and the first surface 117;
被动元件50,所述被动元件50设于所述第一表面117,并与所述滤波器芯片30间隔设置;A passive element 50, the passive element 50 is arranged on the first surface 117 and is arranged spaced apart from the filter chip 30;
柔性塑封膜70,所述柔性塑封膜70贴设于所述第一表面117、所述滤波器芯片30及所述被动元件50的表面,并与所述滤波器芯片30围合形成第一空腔30a;及The flexible plastic sealing film 70 is attached to the first surface 117 , the surface of the filter chip 30 and the passive element 50 , and is enclosed with the filter chip 30 to form a first void cavity 30a; and
塑封层90,所述塑封层90覆盖所述柔性塑封膜70。The plastic sealing layer 90 covers the flexible plastic sealing film 70 .
本实施例中,射频模组系统级封装结构100中的滤波器芯片30可以是声表面波滤波器芯片30(SAW芯片),也可以是体声波滤波器芯片30(BAW),在此不作限定。此处滤波器芯片30设有两个,分别为声表面波滤波器芯片30和体声波滤波器芯片30。滤波器芯片30在贴设于基板10上时,可以仅在其表面镀上Ni/Au,起到抗氧化的作用。被动元件50可以是电容、电阻等各种类型的元件,其数量可以是一个或多个,能够与滤波器芯片30进行电路匹配即可。In this embodiment, the filter chip 30 in the system-in-package structure 100 of the radio frequency module may be a surface acoustic wave filter chip 30 (SAW chip) or a bulk acoustic wave filter chip 30 (BAW), which is not limited here. . Here, there are two filter chips 30 , which are a surface acoustic wave filter chip 30 and a bulk acoustic wave filter chip 30 respectively. When the filter chip 30 is attached to the substrate 10 , only Ni/Au can be plated on the surface thereof to play the role of anti-oxidation. The passive element 50 may be various types of elements such as capacitors and resistors, the number of which may be one or more, and can be matched with the filter chip 30 in a circuit.
此处,柔性塑封膜70的材质为半固态树脂,其具有较好的柔性和可拉伸性,并且具有一定的粘性,在适应不同尺寸的滤波器芯片30和被动元件50后,能够与第一表面117具有较好的粘合度和贴合度,从而防止有外物进入第一空腔30a内影响滤波器芯片30中的振子,保证滤波器芯片30的正常工作。塑封层90即为现有结构中的塑封工艺形成的结构,其材质可以是环氧树脂等,在此不做赘述。同时,该柔性塑封膜70具有低模量,小于塑封层90的模量,能够吸收塑封层90的压力,从而减少具有第一空腔30a的滤波器芯片30发生破裂的风险,实现紧密包覆固定的作用。Here, the material of the flexible plastic film 70 is semi-solid resin, which has good flexibility and stretchability, and has a certain viscosity. The first surface 117 has good adhesion and fit, thereby preventing foreign objects from entering the first cavity 30a and affecting the vibrator in the filter chip 30 and ensuring the normal operation of the filter chip 30 . The plastic encapsulation layer 90 is a structure formed by a plastic encapsulation process in the existing structure, and its material may be epoxy resin, etc., which will not be described in detail here. At the same time, the flexible plastic film 70 has a low modulus, which is smaller than the modulus of the plastic sealing layer 90 , and can absorb the pressure of the plastic sealing layer 90 , thereby reducing the risk of cracking of the filter chip 30 having the first cavity 30 a and realizing the tight wrapping fixed role.
本申请技术方案的射频模组系统级封装结构100包括基板10和设于基板10上的滤波器芯片30以及被动元件50,还包括覆盖滤波器芯片30和被动元件50的柔性塑封膜70和塑封层90,该柔性塑封膜70相比于现有的硬质封装材料,可与基板10有较好的贴合度,从而能够适应各种不同尺寸的芯片或被动元件50,将其封装到同一基板10上,有效提高射频模组的集成度,并节约空间,降低成本。同时,塑封层90能够进一步保证滤波器芯片30和被动元件50的封装稳定性。该射频模组系统级封装结构100使滤波器芯片30能够与被动元件50在一个封装结构内进行电路适配,结构简单,有效降低射频信号的损耗,从而提高射频的效率。The RF module system-in-package structure 100 of the technical solution of the present application includes a substrate 10 , a filter chip 30 and a passive element 50 disposed on the substrate 10 , and also includes a flexible plastic film 70 and a plastic seal covering the filter chip 30 and the passive element 50 . Layer 90, the flexible plastic film 70 can have a better fit with the substrate 10 compared to the existing rigid packaging materials, so that it can adapt to chips or passive components 50 of various sizes, and package them into the same On the substrate 10, the integration degree of the radio frequency module is effectively improved, space is saved, and cost is reduced. At the same time, the plastic packaging layer 90 can further ensure the packaging stability of the filter chip 30 and the passive element 50 . The RF module system level packaging structure 100 enables the filter chip 30 and the passive element 50 to perform circuit adaptation in one packaging structure, the structure is simple, the loss of the RF signal is effectively reduced, and the RF efficiency is improved.
具体地,请继续参照图1,所述基板10包括本体11和设于所述本体11表面的阻焊层13,所述本体11内部形成有内部线路113,所述内部线路113连接有若干第二锡膏球115,所述第二锡膏球115裸露于所述阻焊层13,用于与所述滤波器芯片30和被动元件50连接。Specifically, please continue to refer to FIG. 1 , the substrate 10 includes a main body 11 and a solder resist layer 13 disposed on the surface of the main body 11 , an internal circuit 113 is formed inside the main body 11 , and the internal circuit 113 is connected with a plurality of first Two solder paste balls 115 . The second solder paste balls 115 are exposed on the solder resist layer 13 and are used for connecting with the filter chip 30 and the passive element 50 .
本实施例中,基板10为PCB板,其包括有本体11和设于本体11表面的阻焊层13,该本体11可为陶瓷基体,例如,HTTC(High Temperature Cermeric Carrier,高温烧结陶瓷基板10),或是有机基体,在此不做限定。提供本体11后,其具有相对设置的第一表面117和第二表面119,先在其内部通过过孔和铜管的配合形成内部线路113,用于将设于第一表面117的芯片和元器件的电信号转到第二表面119上,该第二表面119被配置为与所应用的设备进行电连接,从而将滤波器芯片30的电信号传输出去。可以理解的,所述第二表面119设有外接焊盘,从而方便直接焊接于外部设备中。In this embodiment, the substrate 10 is a PCB board, which includes a main body 11 and a solder resist layer 13 disposed on the surface of the main body 11 , and the main body 11 can be a ceramic substrate, for example, HTTC (High Temperature Cermeric Carrier, high temperature sintered ceramic substrate 10), or an organic matrix, which is not limited here. After the body 11 is provided, it has a first surface 117 and a second surface 119 arranged opposite to each other. First, an internal circuit 113 is formed inside the body 11 through the cooperation of the via hole and the copper tube, which is used to connect the chips and components arranged on the first surface 117. The electrical signals of the device go to the second surface 119 which is configured to be electrically connected to the device to which it is applied to transmit the electrical signals of the filter chip 30 . It can be understood that the second surface 119 is provided with external pads, so as to facilitate direct soldering in external devices.
该阻焊层13即为绿漆阻焊层13,能够防止用于连接各个元器件的多个焊点之间发生干扰,可以将阻焊层13的表面设为第一表面117。此处,内部线路113抵接到第一表面117上时,连接有第二锡膏球115,此处的第二只是为了方便与上文对应,并没有先后顺序的意思。因阻焊层13并不导电,故该第二锡膏球115需裸露于阻焊层13,从而与外部的滤波器芯片30和被动元件50电连接,其可以通过印刷的方式形成在本体11上,并在垂直于第一表面117的方向上形成一定的高度,从而在滤波器芯片30贴装于第一表面117时,连接于第二锡膏球115的顶部,形成第一空隙,保证滤波器芯片30的性能稳定。如此,滤波器芯片30的固定使Bump(凸点)工艺和SMT(表面封装)工艺合二为一,有效降低封装成本。此外,第二锡膏球115的材质可以选择高熔点材料,例如SnCu,熔点约为230℃,在射频模组系统级封装结构100进行客户端回流时,能够有效减少第二锡膏球115的融化,从而避免受到塑封层90的膨胀挤压而导致第二锡膏球115流动而短路的情况出现,进一步保证射频模组系统级封装结构100的稳定性。The solder resist layer 13 is the green paint solder resist layer 13 , which can prevent interference between a plurality of solder joints for connecting various components, and the surface of the solder resist layer 13 can be set as the first surface 117 . Here, when the inner circuit 113 abuts on the first surface 117 , the second solder paste ball 115 is connected, and the second here is only for convenience and corresponding to the above, and has no meaning of order. Since the solder resist layer 13 is not conductive, the second solder paste balls 115 need to be exposed on the solder resist layer 13 so as to be electrically connected to the external filter chip 30 and the passive element 50 , which can be formed on the body 11 by printing. and form a certain height in the direction perpendicular to the first surface 117, so that when the filter chip 30 is mounted on the first surface 117, it is connected to the top of the second solder paste ball 115 to form a first gap to ensure The performance of the filter chip 30 is stable. In this way, the fixing of the filter chip 30 enables the Bump (bump) process and the SMT (Surface Mounting) process to be integrated into one, which effectively reduces the packaging cost. In addition, the material of the second solder paste balls 115 can be selected from a high melting point material, such as SnCu, with a melting point of about 230°C, which can effectively reduce the amount of the second solder paste balls 115 when the RF module system-in-package structure 100 performs client reflow. melted, so as to avoid the situation that the second solder paste balls 115 flow and short-circuit due to the expansion and extrusion of the plastic sealing layer 90 , thereby further ensuring the stability of the RF module system-level packaging structure 100 .
可选的实施例中,所述第一空隙的数值范围为20μm~40μm。In an optional embodiment, the value of the first void ranges from 20 μm to 40 μm.
本实施例中,第一空隙的数值为滤波器芯片30与第一表面117之间的垂直距离,该垂直距离受到第二锡膏球115的高度影响,也即第二锡膏球115的高度较高时,该第一空隙的数值较大,当第二锡膏球115的高度较小时,第一空隙的数值也变小。此处,第一空隙的数值不宜过大,否则滤波器芯片30贴装的不够稳定,且容易使得塑封液体流入第一空隙内,从而影响振子。当然,第一空隙的数值也不能过小,否则会使得锡膏球的抗疲劳性差,影响锡膏球的可靠性。故此处设置第一空隙的数值范围为20μm~40μm,在保证滤波器芯片30的有效工作的同时,也可以提高锡焊球的可靠性,进一步提高射频模组系统级封装结构100的稳定性和工作性能。In this embodiment, the value of the first gap is the vertical distance between the filter chip 30 and the first surface 117 , and the vertical distance is affected by the height of the second solder paste balls 115 , that is, the height of the second solder paste balls 115 . When the height is higher, the value of the first void is larger, and when the height of the second solder paste ball 115 is smaller, the value of the first void is also smaller. Here, the value of the first gap should not be too large, otherwise the mounting of the filter chip 30 is not stable enough, and it is easy for the plastic sealing liquid to flow into the first gap, thereby affecting the vibrator. Of course, the value of the first void cannot be too small, otherwise, the fatigue resistance of the solder paste ball will be poor, and the reliability of the solder paste ball will be affected. Therefore, the value range of the first gap is set here to be 20 μm~40 μm, which can improve the reliability of solder balls while ensuring the effective operation of the filter chip 30, and further improve the stability and reliability of the system-level packaging structure 100 of the RF module. work performance.
在上述结构基础上,可选的实施例中,所述柔性塑封膜70的厚度为40μm~50μm。On the basis of the above structure, in an optional embodiment, the thickness of the flexible plastic sealing film 70 is 40 μm˜50 μm.
本实施例中,为了保证滤波器芯片30和被动元件50的稳定性,柔性塑封膜70的厚度不宜过小,当然,为了节约成本和保证柔性塑封膜70的较好的贴合度,柔性塑封膜70的厚度也不宜过大,故而设置柔性塑封膜70的厚度范围为40μm~50μm,例如,厚度值可为40μm,42μm,45μm,50μm等,在保证自身强度和柔软性的情况下,能够有效固定滤波器芯片30和被动元件50,从而提高射频模组系统级封装结构100的结构稳定性。In this embodiment, in order to ensure the stability of the filter chip 30 and the passive element 50, the thickness of the flexible plastic sealing film 70 should not be too small. The thickness of the film 70 should not be too large. Therefore, the thickness range of the flexible plastic film 70 is set to be 40 μm to 50 μm. The filter chip 30 and the passive component 50 are effectively fixed, thereby improving the structural stability of the RF module system-in-package structure 100 .
请参照图2,此外,于其他实施例中,被动元件50可以在进行塑封膜的塑封之后,再贴装到第一表面117上,从而使得塑封膜未覆盖被动元件50,通过塑封层90使得被动元件50被固定牢固。Please refer to FIG. 2 , in addition, in other embodiments, the passive element 50 may be mounted on the first surface 117 after being plastic-sealed with the plastic film, so that the plastic film does not cover the passive element 50 , and the plastic film 90 makes the passive element 50 not covered. The passive element 50 is fixed firmly.
请再次参照图1,上述结构中封装的是滤波器芯片30和被动元件50,当然,在可选的一实施例中,该射频模组系统级封装结构100还包括放大器芯片20和/或转换器芯片20,所述放大器芯片20和/或所述转换器芯片20设于所述第一表面117与所述塑封层90之间,并分别与所述滤波器芯片30和被动元件50间隔设置。Please refer to FIG. 1 again, the filter chip 30 and the passive element 50 are packaged in the above structure. Of course, in an optional embodiment, the RF module system-in-package structure 100 further includes an amplifier chip 20 and/or a converter The amplifier chip 20 and/or the converter chip 20 are arranged between the first surface 117 and the plastic encapsulation layer 90, and are respectively arranged at intervals from the filter chip 30 and the passive element 50 .
本实施例中,为了进一步增加射频模组系统级封装结构100的集成度,该封装结构中还包括有放大器芯片20和/或转换器芯片20(switch),放大器芯片20可以是LNA(Low Noise Amplify,低噪声放大器)或是PA(Power Amplify,功率放大器)。因射频模组前端一般都有接收器模组和发射器模组,发射器模组主要包含滤波器芯片30、PA以及Switch,接收器模组一般包括滤波器芯片30、LNA和Switch,从而实现收发波并进行转换的功能。该实施例中,可以仅设置一个放大器芯片20在该射频模组系统级封装结构100中,其设置在第一表面117与塑封层90之间,即,既可以使用塑封膜覆盖该放大器芯片20,也可以在塑封膜塑封后再贴装放大器芯片20,在此不作限定。如此,无论是在接收器模组内,还是在发射器模组内,将滤波器芯片30和其相关的更多元器件集成与一个封装结构内,可以进一步降低视频信号的损耗,提高射频模组的效率。In this embodiment, in order to further increase the integration degree of the RF module system-in-package structure 100, the package structure further includes an amplifier chip 20 and/or a converter chip 20 (switch), and the amplifier chip 20 may be an LNA (Low Noise Amplify, low noise amplifier) or PA (Power Amplify, power amplifier). Because the front end of the RF module generally has a receiver module and a transmitter module, the transmitter module mainly includes the filter chip 30, PA and Switch, and the receiver module generally includes the filter chip 30, LNA and Switch, so as to realize The function of sending and receiving waves and converting them. In this embodiment, only one amplifier chip 20 may be arranged in the RF module system-in-package structure 100, and it may be arranged between the first surface 117 and the plastic sealing layer 90, that is, the amplifier chip 20 may be covered by a plastic sealing film. , the amplifier chip 20 can also be mounted after the plastic packaging film is plastic-sealed, which is not limited here. In this way, whether in the receiver module or in the transmitter module, the filter chip 30 and more related components are integrated into one package structure, which can further reduce the loss of the video signal and improve the RF mode. group efficiency.
当然,于其他实施例中,也可以将转换器芯片20设于上述射频模组系统级封装结构100中;或者将放大器芯片20和转换器芯片20均设于射频模组系统级封装结构100中。Of course, in other embodiments, the converter chip 20 may also be provided in the above-mentioned RF module system-in-package structure 100; or both the amplifier chip 20 and the converter chip 20 may be provided in the RF module system-in-package structure 100 .
为了方便电连接放大器芯片20和/或转换器芯片20,所述第一表面117设有第一锡膏球111,所述柔性塑封膜70开设有裸露所述第一锡膏球111的避让孔71,所述放大器芯片20和/或转换器芯片20通过所述避让孔71与所述第一锡膏球111固定连接。In order to facilitate the electrical connection of the amplifier chip 20 and/or the converter chip 20 , the first surface 117 is provided with first solder paste balls 111 , and the flexible plastic film 70 is provided with avoidance holes for exposing the first solder paste balls 111 . 71 , the amplifier chip 20 and/or the converter chip 20 are fixedly connected to the first solder paste balls 111 through the avoidance holes 71 .
本实施例中,在柔性塑封膜70覆盖滤波器芯片30和被动元件50后,再贴装放大器芯片20和/或转换器芯片20。此时,为了实现两者与内部线路113电连接,将柔性塑封膜70进行开孔处理,形成裸露第一锡膏球111的避让孔71,该避让孔71的大小可以根据实际情况进行设定,保证后续的塑封层90塑封时液体能够有效填充到多个第一锡膏球111之间,形成稳定结构。In this embodiment, after the flexible plastic film 70 covers the filter chip 30 and the passive element 50 , the amplifier chip 20 and/or the converter chip 20 are mounted. At this time, in order to realize the electrical connection between the two and the internal circuit 113, the flexible plastic film 70 is subjected to hole processing to form avoidance holes 71 for exposing the first solder paste balls 111. The size of the avoidance holes 71 can be set according to the actual situation. , to ensure that the liquid can be effectively filled between the plurality of first solder paste balls 111 when the subsequent plastic sealing layer 90 is plastically sealed to form a stable structure.
此外,为了进一步增加膜流的区域,还可以将基板10上的阻焊层13也进行开孔,从而使得塑封液体进入转换器芯片20或放大器芯片20的底部与基板10进行连接,增加结构稳定性。In addition, in order to further increase the area of film flow, the solder resist layer 13 on the substrate 10 can also be perforated, so that the plastic encapsulation liquid can enter the bottom of the converter chip 20 or the amplifier chip 20 to be connected with the substrate 10 to increase the structural stability sex.
可选的,所述射频模组系统级封装结构100还包括屏蔽层80,所述屏蔽层80覆盖于所述塑封层90的表面。Optionally, the RF module system-in-package structure 100 further includes a shielding layer 80 , and the shielding layer 80 covers the surface of the plastic sealing layer 90 .
本实施例中,为了提高射频模组系统级封装结构100的反干扰能力,在塑封层90的表面设有一侧屏蔽层80,该屏蔽层80可以通过溅镀工艺镀到塑封层90的表面,并延伸到基板10的侧面。具体地,该屏蔽层80的材质可以是铜(Cu)或不锈钢(SUS,Steel Use Stainless),或者是进行双溅镀,提高屏蔽效果的同时,还能够有利于将塑封层90内的热量导出去,从而提高散热性能。In this embodiment, in order to improve the anti-interference capability of the RF module system-level packaging structure 100, a shielding layer 80 is provided on the surface of the plastic sealing layer 90, and the shielding layer 80 can be plated on the surface of the plastic sealing layer 90 by a sputtering process. and extend to the side of the substrate 10 . Specifically, the material of the shielding layer 80 can be copper (Cu) or stainless steel (SUS, Steel Use Stainless), or double sputtering, which can improve the shielding effect and also facilitate the conduction of heat in the plastic sealing layer 90 . out, thereby improving the heat dissipation performance.
本申请还提出一种电子设备(未图示),包括壳体和设于所述壳体内的射频模组系统级封装结构100,所述射频模组系统级封装结构100具体结构参照上述实施例,由于本电子设备的射频模组系统级封装结构100采用了上述所有实施例的全部技术方案,因此至少具有上述实施例的技术方案所带来的所有功能,在此不再一一赘述。The present application also proposes an electronic device (not shown), which includes a housing and a system-in-package structure 100 for a radio frequency module disposed in the housing. For the specific structure of the system-in-package structure 100 for a radio frequency module, refer to the foregoing embodiments , since the radio frequency module system-level packaging structure 100 of the electronic device adopts all the technical solutions of the above-mentioned embodiments, it has at least all the functions brought by the technical solutions of the above-mentioned embodiments, and will not be repeated here.
其中,电子设备可以是穿戴电子设备,例如智能手表或手环,也可以是移动终端,例如,手机或笔记本电脑等,或是电视机等有射频需求的电子设备,在此不作限定。The electronic device may be a wearable electronic device, such as a smart watch or a wristband, or a mobile terminal, such as a mobile phone or a notebook computer, or an electronic device with radio frequency requirements such as a TV set, which is not limited here.
请结合参照图3至图8,本申请又提出一种射频模组系统级封装结构100的制作方法,该射频模组系统级封装结构100的结构也参照上述实施例的射频模组系统级封装结构100,在一实施例中,所述制作方法包括以下步骤:Please refer to FIG. 3 to FIG. 8 , the present application further proposes a manufacturing method of a system-in-package structure 100 of a radio frequency module. The structure of the system-in-package structure 100 of a radio frequency module also refers to the system-in-package of a radio frequency module in the above-mentioned embodiment. Structure 100, in one embodiment, the fabrication method includes the following steps:
步骤S1:提供一基板10,预先在所述基板10的第一表面117印刷若干间隔的锡膏球;Step S1 : providing a substrate 10 , and printing a plurality of spaced solder paste balls on the first surface 117 of the substrate 10 in advance;
首先,该基板10包括有本体11和阻焊层13,该本体11的内部已经形成有内部线路113,并在基板10的第一表面117上印刷若干间隔的锡膏球。锡膏球的材质选择高熔点的SnCu,熔点约为230℃,在射频模组系统级封装结构100进行客户端回流时,能够有效减少锡膏球的融化,从而避免受到塑封层90的膨胀挤压而导致第二锡膏球115流动而短路的情况出现。First, the substrate 10 includes a body 11 and a solder resist layer 13 . Internal circuits 113 have been formed in the body 11 , and several spaced solder paste balls are printed on the first surface 117 of the substrate 10 . The material of the solder paste balls is SnCu with a high melting point, with a melting point of about 230°C, which can effectively reduce the melting of the solder paste balls when the RF module system-level packaging structure 100 performs client reflow, thereby avoiding the expansion and extrusion of the plastic sealing layer 90 . The situation occurs that the second solder paste balls 115 flow and short-circuit due to the pressure.
步骤S2:将滤波器芯片30贴设于所述锡膏球中的至少一个,所述滤波器芯片30与所述第一表面117形成第一空隙;Step S2: attaching the filter chip 30 to at least one of the solder paste balls, the filter chip 30 and the first surface 117 forming a first gap;
其中,用于与滤波器芯片30贴装的锡膏球的高度要保证固化后达到45μm~65μm,在于滤波器芯片30连接后才能保证第一空隙的空间,从而保证滤波器的工作性能。此处,设置滤波器芯片30有两个,其中一个滤波器芯片30为SAW,另一个滤波器为FBAR,为体声波滤波器芯片30的一种。Among them, the height of the solder paste ball used for mounting with the filter chip 30 should be guaranteed to reach 45 μm~65 μm after curing. Only after the filter chip 30 is connected can the space of the first gap be ensured, thereby ensuring the working performance of the filter. Here, there are two filter chips 30 , one filter chip 30 is SAW, and the other filter is FBAR, which is a kind of bulk acoustic wave filter chip 30 .
步骤S3:对第一表面117进行薄膜塑封,形成覆盖第一表面117和滤波器芯片30的柔性塑封膜70,所述柔性塑封膜70、所述滤波器芯片30及第一表面117围合形成第一空腔30a;Step S3 : film plastic sealing is performed on the first surface 117 to form a flexible plastic sealing film 70 covering the first surface 117 and the filter chip 30 , and the flexible plastic sealing film 70 , the filter chip 30 and the first surface 117 are enclosed to form the first cavity 30a;
此处,柔性塑封膜70的材质为半固态树脂,其具有较好的柔性和可拉伸性,并且具有一定的粘性,在适应不同尺寸的滤波器芯片30和被动元件50后,能够与第一表面117具有较好的粘合度和贴合度。此时,柔性塑封膜70贴合于滤波器芯片30的外周面,具体为上表面和四个侧面,并与第一表面117贴合,从而将滤波器芯片30的第一空隙的周围密封起来,形成了第一空腔30a,保证滤波器芯片30的振子正常工作。Here, the material of the flexible plastic film 70 is semi-solid resin, which has good flexibility and stretchability, and has a certain viscosity. A surface 117 has good adhesion and fit. At this time, the flexible plastic film 70 is attached to the outer peripheral surface of the filter chip 30 , specifically the upper surface and the four side surfaces, and attached to the first surface 117 , thereby sealing the periphery of the first gap of the filter chip 30 , the first cavity 30a is formed to ensure that the vibrator of the filter chip 30 works normally.
步骤S41:对柔性塑封膜70进行开槽,裸露出未连接的锡膏球,将被动元件50贴装于基板10上。Step S41 : slot the flexible plastic film 70 to expose the unconnected solder paste balls, and mount the passive component 50 on the substrate 10 .
本实施例中,使用激光对柔性塑封膜70进行开槽处理,形成避让孔71,将需要与被动元件50连接的锡膏球裸露出来,此处该避让孔71的大小可以根据被动元件50的大小进行设定,保证其安装固定的稳定性。同时,对于尺寸较大的被动元件50,也可以将基板10的阻焊层13也进行开槽处理,进而增大膜流的空间,例如,锡膏球的高度为20μm时,阻焊层13的高度为40μm,从而获得60μm的填充高度,有效防止塑封空洞的出现,提高被动元件50的结构稳定性。In this embodiment, the flexible plastic film 70 is slotted by laser to form avoidance holes 71 to expose the solder paste balls that need to be connected to the passive element 50 . The size is set to ensure the stability of its installation and fixation. At the same time, for the passive component 50 with a larger size, the solder resist layer 13 of the substrate 10 can also be grooved to increase the space for film flow. For example, when the height of the solder paste ball is 20 μm, the solder resist layer 13 The height is 40 μm, so as to obtain a filling height of 60 μm, which can effectively prevent the occurrence of plastic encapsulation voids and improve the structural stability of the passive element 50 .
步骤S5:进行第二次塑封,形成覆盖所述柔性塑封膜70和所述被动元件50的塑封层90;Step S5: performing a second plastic sealing to form a plastic sealing layer 90 covering the flexible plastic sealing film 70 and the passive element 50;
本实施例中,塑封层90的形成与现有塑封工艺相同,其材质可选择环氧树脂。同时,因上述柔性塑封膜70具有低模量,小于塑封层90的模量,能够吸收塑封层90的压力,从而减少具有第一空腔30a的滤波器芯片30发生破裂的风险,提高射频模组系统级封装结构100的性能。In this embodiment, the formation of the plastic encapsulation layer 90 is the same as that of the conventional plastic encapsulation process, and the material of the plastic encapsulation layer 90 can be selected from epoxy resin. At the same time, because the above-mentioned flexible plastic film 70 has a low modulus, which is smaller than the modulus of the plastic layer 90, it can absorb the pressure of the plastic layer 90, thereby reducing the risk of cracking of the filter chip 30 having the first cavity 30a, and improving the RF mode. Set system-in-package architecture 100 capabilities.
当然,为了防止外界器件进行干扰,在步骤S5之后还包括步骤S6:进行金属溅镀,形成覆盖所述塑封层90的屏蔽层80;Of course, in order to prevent external devices from interfering, step S6 is also included after step S5: metal sputtering is performed to form a shielding layer 80 covering the plastic sealing layer 90;
此处,屏蔽层80的材质可以选择Cu或或不锈钢(SUS,Steel Use Stainless),或者是进行双溅镀,提高屏蔽效果的同时,还能够有利于将塑封层90内的热量导出去,从而提高散热性能。此处,屏蔽层80除了覆盖塑封层90,还需要延伸到基板10的侧面,从而能够与内部线路113电连接,实现有效的屏蔽功能。Here, the material of the shielding layer 80 can be selected from Cu or stainless steel (SUS, Steel Use Stainless), or by double sputtering, so as to improve the shielding effect, and at the same time, it can also help to export the heat in the plastic encapsulation layer 90, so as to improve the shielding effect. Improve thermal performance. Here, in addition to covering the plastic encapsulation layer 90 , the shielding layer 80 also needs to extend to the side surface of the substrate 10 , so as to be able to be electrically connected to the internal circuit 113 to achieve an effective shielding function.
请结合参照图9至图12,此外,在另一实施例中,也可以将被动元件50与滤波器芯片30一起进行贴装,然后再进行柔性塑封膜70的塑封,从而也可以提高对被动元件50的固定稳定性。如此,则无需进行激光开孔,进一步简化工艺,降低成本,提高射频模组系统级封装结构100的封装稳定性。Please refer to FIG. 9 to FIG. 12 , in addition, in another embodiment, the passive component 50 and the filter chip 30 can also be mounted together, and then the flexible plastic film 70 is plastic-encapsulated, so that the passive component 50 can also be improved. Fixed stability of element 50 . In this way, laser drilling is not required, which further simplifies the process, reduces the cost, and improves the packaging stability of the system-level packaging structure 100 of the radio frequency module.
当然,在射频模组系统级封装结构100还包括有转换器芯片20和/或放大器芯片20时,安装两者也需要对柔性塑封膜70进行激光开孔,此处,可以在对柔性塑封膜70开孔后,将转换器芯片20和/或放大器芯片20与被动元件50一同贴装,也可以实现工艺的简化,降低成本。因转换器芯片20和/或放大器芯片20的尺寸一般较大,故而,在使用激光开槽时,同时也将阻焊层13进行开孔处理,以提高结构稳定性。Of course, when the RF module system-in-package structure 100 further includes the converter chip 20 and/or the amplifier chip 20, the installation of the two also requires laser drilling of the flexible plastic film 70. After opening 70, the converter chip 20 and/or the amplifier chip 20 and the passive element 50 are mounted together, which can also simplify the process and reduce the cost. Since the size of the converter chip 20 and/or the amplifier chip 20 is generally large, when the laser is used for grooving, the solder resist layer 13 is also drilled to improve the structural stability.
以上所述仅为本申请的可选实施例,并非因此限制本申请的专利范围,凡是在本申请的发明构思下,利用本申请说明书及附图内容所作的等效结构变换,或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。The above descriptions are only optional embodiments of the present application and are not intended to limit the scope of the patent of the present application. Under the inventive concept of the present application, any equivalent structural transformations made by using the contents of the description and drawings of the present application, or direct/indirect Applications in other related technical fields are included in the scope of patent protection of this application.

Claims (11)

  1. 一种射频模组系统级封装结构,其中,所述射频模组系统级封装结构包括:A radio frequency module system level packaging structure, wherein the radio frequency module system level packaging structure includes:
    基板,所述基板具有第一表面;a substrate having a first surface;
    滤波器芯片,所述滤波器芯片设于所述第一表面,并与所述第一表面之间形成有第一空隙;a filter chip, the filter chip is arranged on the first surface, and a first gap is formed between the filter chip and the first surface;
    被动元件,所述被动元件设于所述第一表面,并与所述滤波器芯片间隔设置;a passive element, the passive element is arranged on the first surface and is arranged spaced apart from the filter chip;
    柔性塑封膜,所述柔性塑封膜贴设于所述第一表面、所述滤波器芯片及所述被动元件的表面,并与所述滤波器芯片围合形成第一空腔;及a flexible plastic sealing film, the flexible plastic sealing film is attached to the first surface, the surface of the filter chip and the passive element, and surrounds the filter chip to form a first cavity; and
    塑封层,所述塑封层覆盖所述柔性塑封膜。and a plastic sealing layer covering the flexible plastic sealing film.
  2. 如权利要求1所述的射频模组系统级封装结构,其中,所述柔性塑封膜的材质为半固态树脂;和/或,The system-in-package structure of a radio frequency module according to claim 1, wherein the material of the flexible plastic film is semi-solid resin; and/or,
    所述柔性塑封膜的厚度为40μm~50μm。The thickness of the flexible plastic sealing film is 40 μm˜50 μm.
  3. 如权利要求1所述的射频模组系统级封装结构,其中,所述第一空隙的数值范围为20μm~40μm。The system-in-package structure of a radio frequency module according to claim 1, wherein the value of the first gap ranges from 20 μm to 40 μm.
  4. 如权利要求1所述的射频模组系统级封装结构,其中,还包括放大器芯片和/或转换器芯片,所述放大器芯片和/或所述转换器芯片设于所述第一表面与所述塑封层之间,并分别与所述滤波器芯片和被动元件间隔设置。The system-in-package structure of a radio frequency module according to claim 1, further comprising an amplifier chip and/or a converter chip, wherein the amplifier chip and/or the converter chip are arranged on the first surface and the between the plastic encapsulation layers and spaced apart from the filter chip and the passive element respectively.
  5. 如权利要求4所述的射频模组系统级封装结构,其中,所述第一表面设有第一锡膏球,所述柔性塑封膜开设有裸露所述第一锡膏球的避让孔,所述放大器芯片和/或转换器芯片通过所述避让孔与所述第一锡膏球固定连接。The system-in-package structure of a radio frequency module according to claim 4, wherein the first surface is provided with first solder paste balls, and the flexible plastic film is provided with avoidance holes for exposing the first solder paste balls, so The amplifier chip and/or the converter chip is fixedly connected to the first solder paste ball through the avoidance hole.
  6. 如权利要求1至5中任一项所述的射频模组系统级封装结构,其中,所述基板包括本体和设于所述本体表面的阻焊层,所述本体内部形成有内部线路,所述内部线路连接有若干第二锡膏球,所述第二锡膏球裸露于所述阻焊层,用于与所述滤波器芯片和被动元件连接。The system-in-package structure of a radio frequency module according to any one of claims 1 to 5, wherein the substrate comprises a body and a solder resist layer disposed on the surface of the body, and an internal circuit is formed inside the body, so that the A plurality of second solder paste balls are connected to the internal circuit, and the second solder paste balls are exposed on the solder resist layer and are used for connecting with the filter chip and passive components.
  7. 如权利要求6所述的射频模组系统级封装结构,其中,所述射频模组系统级封装结构还包括屏蔽层,所述屏蔽层覆盖于所述塑封层的表面。The system-in-package structure of the radio frequency module according to claim 6, wherein the system-in-package structure of the radio frequency module further comprises a shielding layer, and the shielding layer covers the surface of the plastic sealing layer.
  8. 如权利要求6所述的射频模组系统级封装结构,其中,所述基板还包括与所述第一表面相对设置的第二表面,所述第二表面设有外接焊盘。The system-in-package structure of the radio frequency module according to claim 6, wherein the substrate further comprises a second surface disposed opposite to the first surface, and the second surface is provided with external pads.
  9. 一种电子设备,包括壳体和设于所述壳体内的射频模组系统级封装结构,所述射频模组系统级封装结构为如权利要求1-8中任一项所述的射频模组系统级封装结构。An electronic device, comprising a casing and a radio frequency module system-level packaging structure disposed in the casing, the radio frequency module system-level packaging structure being the radio frequency module according to any one of claims 1-8 system-in-package structure.
  10. 一种射频模组系统级封装结构的制作方法,包括以下步骤:A manufacturing method of a system-level packaging structure of a radio frequency module, comprising the following steps:
    提供一基板,预先在所述基板的第一表面印刷若干间隔的锡膏球;providing a substrate, and printing a plurality of spaced solder paste balls on the first surface of the substrate in advance;
    将滤波器芯片贴设于所述锡膏球中的至少一个,所述滤波器芯片与所述第一表面形成第一空隙;attaching a filter chip to at least one of the solder paste balls, and forming a first gap between the filter chip and the first surface;
    对所述第一表面进行薄膜塑封,形成覆盖所述第一表面和滤波器芯片的柔性塑封膜,所述柔性塑封膜、滤波器芯片及第一表面围合形成第一空腔;Film plastic sealing is performed on the first surface to form a flexible plastic sealing film covering the first surface and the filter chip, and the flexible plastic sealing film, the filter chip and the first surface are enclosed to form a first cavity;
    对所述柔性塑封膜进行开槽,裸露出未连接的锡膏球,将被动元件贴装于所述基板上;Slotting the flexible plastic film to expose unconnected solder paste balls, and attaching passive components on the substrate;
    进行第二次塑封,形成覆盖所述柔性塑封膜和所述被动元件的塑封层。A second plastic sealing is performed to form a plastic sealing layer covering the flexible plastic sealing film and the passive element.
  11. 如权利要求10所述的射频模组系统级封装结构的制作方法,其中,在所述进行第二次塑封,形成覆盖所述柔性塑封膜和所述被动元件的塑封层的步骤之后,还包括:The method for fabricating a system-in-package structure of a radio frequency module according to claim 10, wherein after the step of performing the second plastic encapsulation to form a plastic encapsulation layer covering the flexible plastic encapsulation film and the passive element, the method further comprises: :
    进行金属溅镀,形成覆盖所述塑封层的屏蔽层。Metal sputtering is performed to form a shielding layer covering the plastic encapsulation layer.
PCT/CN2021/143208 2021-03-01 2021-12-30 Radio frequency module system-in-package structure and method for manufacturing same, and electronic device WO2022183831A1 (en)

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