CN114823651B - Radio frequency system module packaging structure with filter and method - Google Patents
Radio frequency system module packaging structure with filter and method Download PDFInfo
- Publication number
- CN114823651B CN114823651B CN202210358285.0A CN202210358285A CN114823651B CN 114823651 B CN114823651 B CN 114823651B CN 202210358285 A CN202210358285 A CN 202210358285A CN 114823651 B CN114823651 B CN 114823651B
- Authority
- CN
- China
- Prior art keywords
- filter
- packaging
- substrate
- chip
- system module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 238000003466 welding Methods 0.000 claims abstract description 32
- 229910000679 solder Inorganic materials 0.000 claims abstract description 26
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000005022 packaging material Substances 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 32
- 238000000465 moulding Methods 0.000 claims description 16
- 239000004033 plastic Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 238000010146 3D printing Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 239000007888 film coating Substances 0.000 abstract description 7
- 238000009501 film coating Methods 0.000 abstract description 7
- 238000004021 metal welding Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000012858 packaging process Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010137 moulding (plastic) Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 210000004303 peritoneum Anatomy 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a radio frequency system module packaging structure with a filter and a method thereof, wherein the radio frequency system module packaging structure comprises: the surface of the filter chip is welded with a metal solder ball to form a convex point, the first side and the second side are provided with a packaging substrate with a plurality of bonding pads, and the first side is printed with solder paste corresponding to the bonding pads of the filter chip; welding the filter chip and the first side of the packaging substrate to form a tin-clad metal welding ball structure; a passive component mounted on the first side of the package substrate, and an active component mounted on the second side of the package substrate; the packaging material comprises an isolation film, and the isolation film covers the first side of the packaging substrate, the surfaces of the filter and the passive device, so that the filter and the first side of the packaging substrate form a filter cavity; the cost of welding wires and equipment expenditure is reduced, the strength and the reliability of welding spots are improved, the reliability problem caused by selective film coating is solved, and the shielding performance of the packaging module is enhanced through the interconnection of the electromagnetic shielding layer and the side metal layer of the adapter plate.
Description
Technical Field
The invention relates to the technical field of radio frequency system module packaging, in particular to a radio frequency system module packaging structure with a filter and a method.
Background
With the development of 5G and the market demand, the radio frequency front-end chip is also highly integrated. Due to the special structural function of the filter, the piezoelectric property of the piezoelectric material is utilized, and the interdigital transducer surface is required to be ensured not to contact other substances in the packaging process, namely the surface of the chip is required to be ensured to be a cavity. The existing method for realizing the cavity of the filter has two forms, namely, a method of punching gold balls or planting solder balls on the surface of a wafer and additionally coating a film is adopted to form the cavity in the process of manufacturing discrete devices, the scheme is mainly used for packaging discrete devices, the process is mature, the cost is lower, and the reliability is better. However, the filter with such a package structure has a large process challenge and a large package reliability problem in the packaging process. In another mode, a cavity is formed inside a Wafer by coating a film in a Wafer manufacturing process, namely a Wafer Level Package (WLP) packaging mode, and a WLP filter packaging structure has high cost, good performance and reliability and can be directly applied to packaging of a module with a filter system.
The existing implementation schemes of discrete devices or modules of the filter are specifically as follows:
1) And (3) reversely buckling the surface of the filter wafer on a packaging substrate in a gold ball welding and ultrasonic flip-chip welding mode, and forming a cavity in a film coating mode to finish the filter packaging process. The method is suitable for discrete device packaging forms.
2) The surface of the filter wafer is printed with tin to form a tin ball or embedded with the tin ball, a cavity is formed by adopting a flip Chip bonding and film covering process to complete filter packaging, generally, a CSP (Chip Scale Package) packaging process is adopted, the cost of the tin printing and embedding process is high, the high flatness of the tin ball after tin printing or tin ball loading is poor, the later-stage welding is influenced, and the method is not suitable for modular packaging with the filter.
3) The WLP (Wafer Level Package) adopts a film covering mode to form a cavity structure in the filter Wafer, and can be directly used for a radio frequency modular packaging product with a filter.
Therefore, when the filter Package structure is selected, the filter with the self-cavity structure of the WLP (Wafer Level Package) Wafer can only be selected and integrated with other associated devices, such as a switch chip, a low noise chip, a power amplifier chip, and the like, in a module system, so as to form a modular Package structure, improve performance, and reduce size.
However, the WLP filter structure is costly and is not conducive to system modular packaging. For a filter with a wafer not having a cavity structure, a film needs to be coated on the surface of the wafer to form a cavity after a gold ball is punched or a solder ball is implanted, and the filter with the cavity formed only by coating the film is not suitable for systematic module packaging and has the problem of poor reliability. In addition, for module packaging consisting of multiple devices, a filter needing film coating cannot avoid other related devices (flip chips or wire bonding chips) on the module in the film coating process, as shown in fig. 1, a packaging substrate can also coat devices except the filter simultaneously in the film coating process, for example, if the packaging structure is other chips of the flip chip or wire bonding structure, the Bump welding points at the bottom of the chip after the peritoneum of the flip chip cannot realize bottom filling, so that the product has higher reliability risk, in addition, the selective film coating process cannot be realized in the film coating process, the wire bonding chip is avoided, and the process feasibility and the mass production are not realized.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the radio frequency module packaging structure with the filter and the packaging method thereof, and the packaging structure and the packaging process are improved on the basis of the traditional radio frequency system module packaging structure with the filter, so that the manufacturability of the module with the filter is improved, the packaging investment cost is reduced, and the overall reliability of the module is improved.
The technical scheme adopted by the invention for overcoming the technical problems is as follows: a radio frequency system module packaging structure with a filter comprises a filter chip, wherein a plurality of metal solder balls are welded on the surface of the filter chip to form bumps, a packaging substrate is provided with a plurality of bonding pads on both the first side and the second side of the packaging substrate, and solder paste is printed on the first side of the packaging substrate corresponding to the bonding pads of the filter chip; the filter chip is welded with the first side of the packaging substrate to form a tin-clad metal solder ball structure; a passive component mounted on the first side of the package substrate, and an active component mounted on the second side of the package substrate; and the packaging material at least comprises an isolation film which covers the first side of the packaging substrate, the filter and the surface of the passive device, so that the filter and the first side of the packaging substrate form a filter cavity.
The surface of the wafer is welded by adopting copper balls, and the interconnection between the filter chip and the packaging substrate is realized by utilizing a tin-clad copper process, so that the cost of welding wires is reduced, and the strength and the reliability performance of welding spots are improved. The surface mounting technology is adopted to replace the ultrasonic flip-chip bonding process, additional investment on flip-chip bonding equipment is needed, and equipment expenditure cost can be greatly saved.
Further, the packaging substrate further comprises an associated device mounted on the second side of the packaging substrate, wherein the associated device at least comprises an adapter plate or a solder ball welded on the second side of the packaging substrate, and the ground layer of the adapter plate is a metal layer.
Furthermore, the printed circuit board further comprises an electromagnetic shielding layer, and at least one part of the electromagnetic shielding layer is interconnected with the grounding layer of the adapter plate.
The grounding area of the shielding layer and the side edge of the packaging substrate is increased, so that the impedance is reduced, and the shielding performance of the packaging module is enhanced.
Furthermore, the packaging material also comprises a first plastic packaging layer covering the outer surface of the isolation film and a second plastic packaging layer filled on the second side of the packaging substrate.
And the related device further comprises a conductive metal layer arranged at the bottom of the second plastic packaging layer, and a grounding column, wherein two ends of the conductive metal layer are respectively connected with the grounding column and arranged below the active element.
The conductive metal layer enhances shielding and improves heat dissipation performance.
The application also provides a radio frequency system module packaging method with the filter, which comprises the steps of providing a filter chip, planting metal welding balls on the surface of a filter wafer by using the metal welding wires in an ultrasonic welding mode, and dividing the filter wafer into single IC wafer monomers so as to obtain the filter chip; providing a packaging substrate, printing solder paste on a bonding pad on the first side of the packaging substrate in an SMT (surface mount technology) mode, and welding a filter chip on the first side of the packaging substrate to form a tin-clad metal welding structure; welding the passive element to the first side of the packaging substrate; laminating the filter chip, the passive element and the first side of the packaging substrate by adopting an isolation film, so that the filter forms a cavity; and mounting the associated device and the active element on the second side of the packaging substrate.
Further, the mounting of the associated device and the active element on the second side of the package substrate specifically includes: and welding the related device and the active element to the second side of the packaging substrate by adopting SMT, wherein the related device at least comprises an adapter plate and/or a grounding copper column, the active element at least comprises a routing chip, the routing chip is adhered to the second side of the packaging substrate, and gold wire or copper wire welding is carried out so as to form electric connection with the packaging substrate.
And further, carrying out plastic package on the outer side surface of the isolation film on the first side of the packaging substrate, and filling the active element and the second side of the packaging substrate with packaging materials so as to complete double-sided plastic package of the radio frequency system module.
Furthermore, the method also comprises the step of manufacturing the electromagnetic shielding layer in a sputtering, spraying, 3D printing, shielding film pressing or electroplating mode, wherein the electromagnetic shielding layer is connected with the outer side surface of the adapter plate and grounded.
And further, manufacturing a conductive metal layer, specifically including manufacturing the conductive metal layer by spraying or sputtering 3D printing or conductive film pressing at the bottom of the radio frequency system module subjected to double-sided plastic package.
The invention has the beneficial effects that:
1. the filter adopting the CSP packaging structure is used for carrying out module packaging in terms of design and process;
2. the traditional filter packaging process is improved, the surface of the wafer is welded by adopting copper balls, and the interconnection between the filter chip and the packaging substrate is realized by utilizing a tin-clad copper process, so that the cost of welding wires is reduced, and the strength and the reliability of welding spots are improved;
3. the surface mounting technology is adopted to replace the ultrasonic flip-chip bonding process, additional investment on flip-chip bonding equipment is required, and equipment expenditure cost can be greatly saved;
4. placing an active element which cannot be used for laminating on the back of a system packaging module to form a double-sided Molding packaging structure, and structurally solving the problems of easy cracking of welding points, tin connection and reliability failure caused by the fact that epoxy resin cannot be filled in selective laminating and flip chip Bump welding positions;
5. the side edge of the adapter plate is a metal layer, the electromagnetic shielding layer is grounded with the side edge of the adapter plate, and the grounded area of the shielding layer and the side edge of the packaging substrate is increased, so that the impedance is reduced, and the shielding property of the packaging module is enhanced.
6. The grounding problem between the bottom of a double-sided module packaging device with a filter and a mainboard is solved, and the grounding area between the double-sided module packaging device and the mainboard is increased, so that the heat dissipation performance is improved.
Drawings
FIG. 1 is a prior art multi-device RF systemized module package structure with filters;
FIG. 2 is a block diagram of an embodiment of a RF system module package with a filter;
FIG. 3 is a schematic diagram of a filter wafer according to an embodiment of the invention;
FIG. 4 is a schematic structural diagram of an interposer according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a back side structure of the rf system module package structure with a filter shown in fig. 2;
FIG. 6 is a schematic diagram of a backside pad structure of the RF system module package with filter shown in FIG. 2;
FIG. 7 is a schematic perspective view of a solder ball structure of a filter according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a filter and package substrate bonding according to an embodiment of the invention;
FIG. 9 is a schematic diagram of a filter cavity formed by laminating isolation films according to an embodiment of the present invention;
FIG. 10 is a schematic view of a compression molded package structure of a first molding layer according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a package structure for bonding a flip chip and an associated chip according to an embodiment of the present invention;
FIG. 12 is a schematic view of a package structure of a wire bonding chip according to an embodiment of the present invention;
FIG. 13 is a schematic view of a compression molded package structure with a second molding layer according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a package structure for forming a conductive layer and an electromagnetic shielding layer according to an embodiment of the present invention;
FIG. 15 is a schematic view of a package structure using solder ball transfer according to an embodiment of the present invention;
in the figure, 1-package substrate; 11-pads; 12-tin coated copper; 2-a filter chip; 2 a-a first filter chip; 21-solder balls; 22 a-a first filter cavity; 2 b-a second filter 2;22 b-a second filter cavity; 31-a barrier film; 32 a-a first molding layer; 32 b-a second molding layer; 33-underfill; 41-passive components; 42-flip chip; 43-wire bonding chip; 44-gold or copper wires; 51-an adapter plate; 51 a-an interposer ground plane; 51 b-via pads; 51 c-interposer pad; 52-grounded copper posts; 54-a conductive metal layer; 54 a-metallic shielding cover; 54 b-metal shield cover pad; 55-an electromagnetic shielding layer; 6-a filter wafer; 7-solder ball; 8-ground line.
Detailed Description
In order to facilitate a better understanding of the invention for those skilled in the art, the invention will be described in further detail with reference to the accompanying drawings and specific examples, which are given by way of illustration only and do not limit the scope of the invention.
The radio frequency system module package structure with the filter according to this embodiment includes a package substrate 1, a filter chip 2, a passive component 41, an active component, and an associated device. The two sides of the package substrate 1 are respectively a first side and a second side, the first side and the second side are both provided with a plurality of bonding pads 11, and the first side of the package substrate corresponds to the bonding pads of the filter chip and is printed with solder paste. A plurality of metal solder balls 21 are welded on the surface of the filter chip 2 to form a salient point, and a tin-coated metal solder ball structure is formed by welding the salient point and the first side of the packaging substrate 1. The first side of the package substrate 1, the filter chip 2 and the surface of the passive component 41 are covered by the isolation film 31, so that a filter cavity is formed between the filter chip 2 and the first side of the package substrate 1. The passive components 41 and the filter 2 are mounted on a first side of the package substrate and the active components and associated devices are mounted on a second side of the package substrate.
In an embodiment of the present invention, as shown in fig. 2, a radio frequency system module package structure of a double-sided plastic-sealed filter with a shielding layer is provided, two types of filter chips are packaged in a radio frequency system module, and the two types of filters are, as shown in fig. 2, a first filter 2a and a second filter 2b, respectively. And respectively obtained by wafer segmentation of the first filter and the second filter. As shown in fig. 3, copper balls are planted on the wafer surfaces of the first filter and the second filter by means of copper ball bonding, so that copper Bump bumps with a certain height are formed on the filter wafer 6, as shown in the left diagram of fig. 3. Therefore, the first filter and the second filter obtained by cutting both have copper Bump bumps, as shown in the right diagram of fig. 3. So that the first filter 20 and the second filter 2b are bump welded to the metal pads of the first side of the package substrate, respectively. Wherein the height of the bump is related to the diameter of the selected bonding wire and the wire.
In one embodiment of the present invention, copper balls are planted as the solder balls 21 by a copper ball bonding method.
The passive component 41 is also soldered to the pads on the first side of the package substrate. The passive element 41 and the filter are arranged on the same side, and selective coating is not needed, so that the passive element 41, the first filter 2a and the second filter 2b are directly pressed by the isolation film 31, and the filter forms a cavity.
The flip chip 42 is soldered as an active component to the pads 11 on the second side of the package substrate. The wire bonding chip 43 is mounted on the second side of the package substrate as an active device and is soldered by gold or copper wires 44, thereby forming an electrical connection with the package substrate 1. The active element, the passive element and the two sides of the filter are arranged, and the active element cannot be used for laminating, so that the problems of easy cracking of welding points, tin connection and reliability failure caused by the fact that epoxy resin cannot be filled in the selective laminating and flip chip Bump welding positions are structurally solved.
In the embodiment of the present invention, the separator 31 employs an epoxy film. Because the thickness of the isolation film 31 is thin, in one embodiment of the present invention, a compression molding process is used to form the C-Mold first molding layer 32a on the outer side of the isolation film 31, so as to electrically protect the passive component 41 and the filter chip 2.
In one embodiment of the present invention, the flip chip 42 and the wire bonding chip 43 mounted on the second side of the package substrate are underfill-coated to form the second molding layer 32b, so as to electrically protect the active device.
In some embodiments, the package substrate further includes an associated device mounted on the second side of the package substrate 1, where the associated device includes an interposer 51, as shown in fig. 4, which is a schematic diagram of the interposer, where a ground layer 51a of the interposer is a metal layer, through-hole pads 51b are distributed around the interposer for welding the interposer 51 to the package substrate 1, and the interposer is a hollow structure, the interposer 51 is mounted on two sides of the package substrate 1, and the ground layer of the interposer on the side surface is a metal shielding layer and is in contact with the package shielding layer, so as to increase a ground area.
In addition to the adapter board 51, in some implementations, a solder ball may be used to connect to the main control board of the rf system module with filter of the present invention.
In some embodiments, the associated device further includes a grounded copper pillar 52 mounted on the second side of the package substrate.
In some embodiments, the rf system module with double-sided plastic package is provided with the electromagnetic shielding layer 55, as shown in fig. 2, the electromagnetic shielding layer 55 surrounds the top of the first plastic package layer 32a, two ends of the package substrate 1 and the ground layer of the interposer are completely contacted and grounded, the ground layer of the interposer is a metal layer, and the area of the shielding layer grounded to the side of the package substrate is increased, so as to reduce the impedance and enhance the shielding performance of the package module.
In some embodiments, a conductive metal layer 54 is disposed on the bottom of the second molding layer of the rf system module with double-sided molding, and the conductive metal layer 54 is disposed below the active element. The grounded copper pillar 52, the package substrate 1 and the electromagnetic shield layer 55 are all interconnected to ground.
In some embodiments, wherein the conductive metal layer 54 is in the form of a metal shielding cover 54a, as shown in fig. 5, which is a schematic backside view of the rf system module package structure with filter shown in fig. 2, the metal shielding cover 54a is directly exposed from the backside direction of the package structure, and similarly to the single-sided package structure, the chip that needs heat dissipation or needs isolation shielding is heat-dissipated or shielded in the form of the metal shielding cover 54 a. As shown in fig. 5, the flip chip 42 and the wire bonding chip 43 are both disposed in the metal shielding cover 54a, and are grounded through the metal shielding cover 54a, so that the chip disposed in the metal shielding cover 54a is protected from external interference, and the heat dissipation area of the chip is increased.
As shown in fig. 6, a back surface bonding pad diagram of the rf system module package structure with a filter shown in fig. 2 is shown, wherein the back surface o of the metal shielding cover 54a is exposed out of the package structure, so as to obtain a metal shielding cover bonding pad 54b for being soldered to a main control board. The center position shown in fig. 6 is a portion of the metallic shield cover pad 54b, and the opposite ends are interposer pads 51c formed of an interposer. The chip which needs heat dissipation or needs isolation shielding is placed in the shielding cover, and the problems of isolation and heat dissipation of the chip are solved.
Example 2
The present embodiment further provides a method for packaging a module of a radio frequency system with a filter, and the method for packaging a module of a radio frequency system with a filter is further described below by using an example, so that a person skilled in the art can better understand the process method for packaging a module of a radio frequency system of the present invention.
S1, providing a filter chip, planting metal welding balls on the surface of the filter wafer by using the metal welding wires in an ultrasonic welding mode, and dividing the filter wafer into single IC wafer monomers to obtain the filter chip.
In an embodiment of the present invention, as shown in fig. 3, copper balls are first planted on the surface of the filter wafer 6 by a copper ball bonding method, so as to form copper Bump bumps with a certain height, and the bonded wafer is cut to form individual devices of a single IC wafer. As shown in the single IC wafer perspective view of fig. 7, the solder balls 21 planted on the surface of the filter chip 2 are copper balls.
S2, providing a packaging substrate, printing solder paste on a bonding pad on the first side of the packaging substrate in an SMT mode, and welding a filter chip on the first side of the packaging substrate to form a tin-clad metal welding structure;
in one embodiment of the present invention, as shown in fig. 8, solder paste is printed on the surface of the bonding pads 11 by SMT method on the upper surface of the package substrate 1, and the filter chip 2 is soldered to the first side of the package substrate. The interconnection between the filter chip 2 and the packaging substrate 1 is realized by using the tin-clad copper 12 process, an ultrasonic flip-chip welding process is not needed, the cost of welding wires is saved, the strength of welding spots is increased, and the reliability is improved.
S3, welding the passive element to the first side of the packaging substrate;
other passive components 41 are also soldered to the first side of the package substrate by SMT.
S4, laminating the filter chip, the passive element and the first side of the packaging substrate by adopting the isolation film, so that the filter forms a cavity
As shown in fig. 9, the outer surface of the filter chip 2, the outer surface of the passive component, and the first side of the package substrate are subjected to an isolation film lamination process, so as to form a filter cavity.
S5, carrying out plastic package molding on the surface of the device coated with the isolation film,
as the thickness of the isolation film is thin, as shown in fig. 10, the surface of the device covered with the isolation film needs to be subjected to plastic molding by Compression Mold (Compression molding process), so as to form a first plastic molding layer for electrically protecting the filter chip and the passive component.
And S6, mounting the related device and the active element on the second side of the packaging substrate.
The second side of the package substrate is SMT soldered to active components, such as flip chip 42 as shown in the drawings, and to associated devices, such as interposer 51 and grounded copper stud 52 as shown in fig. 11. As shown in fig. 4, the interposer 51 is soldered around the package substrate 1 via the through-hole pads 51 b. The interposer 51 has a hollow rectangular structure, and the interposer ground layer 51a is a metal layer.
As shown in fig. 12, a wire-bonding die 43 is attached to the second side of the package substrate by a normal die bonding process, and a gold wire or a copper wire 44 is soldered to form an electrical connection with the package substrate 1.
And S6, performing electric protection on the active element on the second side of the packaging substrate in an injection molding or bottom filling glue mode.
As shown in fig. 13, the associated devices and active elements mounted on the second side of the package substrate are subjected to a Molding (epoxy injection) or dot underfill method to form a second Molding layer 32b for electrically protecting the devices. As shown in fig. 13, in the form of an underfill.
And S7, manufacturing the electromagnetic shielding layer.
And manufacturing an electromagnetic shielding layer 55 on the radio frequency system module subjected to double-sided plastic package, wherein the electromagnetic shielding layer 55 can be manufactured by adopting sputtering, spraying, 3D printing, shielding film pressing and electroplating. As shown in fig. 14, the electromagnetic shield layer 55 covers the interposer ground layer 51a on the outer side of the interposer, and covers the surface of the first molding layer 32 a. Because the grounding layer 51a of the adapter plate is a metal layer, the electromagnetic shielding layer 55 and the metal layer are interconnected and grounded, and the grounding area of the shielding layer and the side edge of the packaging substrate is increased, thereby reducing the impedance and enhancing the shielding property of the packaging module.
And S8, manufacturing the conductive metal layer.
As shown in fig. 14, the conductive metal layer 54 is formed on the bottom of the second molding layer 32b of the double-sided module package by spraying, sputtering 3D printing or conductive film laminating. In one embodiment of the present invention, the conductive metal layer 54 is a grounded copper layer. The conductive metal layer 54 interconnects with the grounded copper pillar 52, and the metal conductive layer 54 is not limited to copper, silver, or other materials that can be conductive.
Wherein the conductive metal layer 54 is in the form of a metal shield cover 54 a. As shown in fig. 5, the flip chip 42 and the wire bonding chip 43 are disposed in the metal shield cover 54 a. Thereby preventing the chip disposed in the metal shielding cover 54a from external interference and also solving the heat dissipation problem of the chip. Meanwhile, the metal shielding layer exposes the package structure, as shown in fig. 6, and exposes the metal shielding lid pad 54b for main control board soldering.
In some embodiments, as shown in fig. 15, solder balls 7 may also be used to replace the interposer 51 to be soldered on the second side of the package substrate, so as to interconnect with the terminal main board. The electromagnetic shielding layer is connected with the grounding wire.
The embodiments in the present specification are described in a recursive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. The above-described structure and method embodiments are merely exemplary, and some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
The foregoing merely illustrates the general principles of the invention and preferred embodiments thereof, and many changes and modifications may be made by one skilled in the art in light of the above teachings, and such changes and modifications are intended to be within the scope of the invention.
Claims (10)
1. A radio frequency system module package structure with a filter, comprising:
a filter chip, wherein a plurality of copper balls are welded on the surface of the filter chip to form salient points,
the packaging substrate is provided with a plurality of bonding pads on the first side and the second side, wherein the first side of the packaging substrate is printed with solder paste corresponding to the bonding pads of the filter chip;
the filter chip is welded with the first side of the packaging substrate to form a tin-coated copper solder ball structure;
a passive component mounted on the first side of the package substrate, and an active component mounted on the second side of the package substrate;
and the packaging material at least comprises an isolation film which covers the first side of the packaging substrate, the filter and the surface of the passive device, so that the filter and the first side of the packaging substrate form a filter cavity.
2. The rf system module package structure with filter of claim 1, further comprising an associated device mounted on the second side of the package substrate, wherein the associated device comprises at least a interposer or a solder ball soldered on the second side of the package substrate, and wherein the interposer ground layer is a metal layer.
3. The rf system module package structure with filter of claim 2, further comprising an electromagnetic shielding layer, at least a portion of the electromagnetic shielding layer interconnected with the interposer ground plane.
4. The rf system module package structure with filter of claim 2, wherein the packaging material further comprises a first molding compound layer covering the outer surface of the isolation film and a second molding compound layer filled on the second side of the packaging substrate.
5. The rf system module package structure with filter of claim 4, further comprising a conductive metal layer disposed at the bottom of the second plastic package layer, wherein the associated device further comprises a ground pillar, and two ends of the conductive metal layer are respectively connected to the ground pillar and disposed under the active component.
6. A method for packaging a radio frequency system module with a filter is characterized in that,
providing a filter chip, planting copper balls on the surface of the filter wafer by using metal bonding wires in an ultrasonic welding mode, and dividing the filter wafer into single IC wafer monomers to obtain the filter chip;
providing a packaging substrate, printing solder paste on a bonding pad on a first side of the packaging substrate in an SMT (surface mount technology) mode, and welding a filter chip on the first side of the packaging substrate to form a tin-clad copper welding structure;
welding the passive element to the first side of the packaging substrate;
laminating the filter chip, the passive element and the first side of the packaging substrate by adopting an isolation film, so that the filter forms a cavity;
and mounting the associated device and the active element on the second side of the packaging substrate.
7. The method for packaging a rf system module with a filter according to claim 6, wherein the mounting of the associated device and the active element on the second side of the package substrate specifically comprises:
and soldering the associated device and the active element to the second side of the package substrate by SMT, wherein the associated device at least comprises an interposer and/or a grounding copper pillar,
the active component at least comprises a routing chip, the routing chip is adhered to the second side of the packaging substrate, and gold wires or copper wires are welded to form electric connection with the packaging substrate.
8. The method of claim 7, further comprising plastic-sealing an outer side of the isolation film on the first side of the package substrate, and filling the active device and the second side of the package substrate with a packaging material to complete double-sided plastic-sealing of the rf system module.
9. The method of claim 7, further comprising forming the electromagnetic shielding layer by sputtering, spraying, 3D printing, laminating a shielding film, or electroplating, wherein the electromagnetic shielding layer is grounded to the outer side of the interposer.
10. The method for packaging a rf system module with a filter according to claim 8, further comprising fabricating a conductive metal layer, specifically comprising fabricating the conductive metal layer by spraying or sputtering 3D printing or conductive film pressing on the bottom of the rf system module with double-sided plastic package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210358285.0A CN114823651B (en) | 2022-04-06 | 2022-04-06 | Radio frequency system module packaging structure with filter and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210358285.0A CN114823651B (en) | 2022-04-06 | 2022-04-06 | Radio frequency system module packaging structure with filter and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114823651A CN114823651A (en) | 2022-07-29 |
| CN114823651B true CN114823651B (en) | 2023-04-07 |
Family
ID=82534523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210358285.0A Active CN114823651B (en) | 2022-04-06 | 2022-04-06 | Radio frequency system module packaging structure with filter and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114823651B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115000654B (en) * | 2022-08-05 | 2022-11-11 | 深圳飞骧科技股份有限公司 | Radio frequency module and packaging method thereof |
| CN115642095B (en) * | 2022-09-08 | 2024-03-29 | 武汉敏声新技术有限公司 | Radio frequency module packaging structure and method |
| CN117790427A (en) * | 2022-09-29 | 2024-03-29 | 锐石创芯(重庆)科技有限公司 | Radio frequency front end module packaging structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870106A (en) * | 2016-06-01 | 2016-08-17 | 爱普科斯科技（无锡）有限公司 | Packaging structure of radio frequency filtration module and packaging technology of packaging structure |
| CN216120271U (en) * | 2021-04-28 | 2022-03-22 | 全讯射频科技(无锡)有限公司 | Packaging structure of radio frequency module |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131149B2 (en) * | 2002-08-30 | 2008-08-13 | エプソントヨコム株式会社 | Manufacturing method of surface mount type SAW device |
| KR101079429B1 (en) * | 2009-09-11 | 2011-11-02 | 삼성전기주식회사 | Device package substrate and manufacturing method of the same |
| US10333493B2 (en) * | 2016-08-25 | 2019-06-25 | General Electric Company | Embedded RF filter package structure and method of manufacturing thereof |
| CN107342279A (en) * | 2017-06-08 | 2017-11-10 | 唯捷创芯(天津)电子技术股份有限公司 | A kind of radio-frequency module and its implementation of anti-electromagnetic interference |
| CN109473539B (en) * | 2018-12-14 | 2024-04-12 | 苏州科阳半导体有限公司 | Filter chip module and preparation method thereof |
| CN111030638A (en) * | 2019-12-24 | 2020-04-17 | 天通凯美微电子有限公司 | Surface acoustic wave module one-step molding packaging structure and packaging process thereof |
| CN111653558A (en) * | 2020-07-10 | 2020-09-11 | 天通凯美微电子有限公司 | Double-sided packaging structure and packaging process of surface acoustic wave bare chip |
| CN113035855B (en) * | 2021-03-01 | 2022-10-18 | 青岛歌尔智能传感器有限公司 | Radio frequency module system-in-package structure, manufacturing method thereof and electronic equipment |
-
2022
- 2022-04-06 CN CN202210358285.0A patent/CN114823651B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870106A (en) * | 2016-06-01 | 2016-08-17 | 爱普科斯科技（无锡）有限公司 | Packaging structure of radio frequency filtration module and packaging technology of packaging structure |
| CN216120271U (en) * | 2021-04-28 | 2022-03-22 | 全讯射频科技(无锡)有限公司 | Packaging structure of radio frequency module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114823651A (en) | 2022-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6803254B2 (en) | Wire bonding method for a semiconductor package | |
| CN114823651B (en) | Radio frequency system module packaging structure with filter and method | |
| KR100459971B1 (en) | Semiconductor device, method and device for producing the same, circuit board, and electronic equipment | |
| US7898058B2 (en) | Integrated chip package structure using organic substrate and method of manufacturing the same | |
| US7129571B2 (en) | Semiconductor chip package having decoupling capacitor and manufacturing method thereof | |
| US6137162A (en) | Chip stack package | |
| WO2007075648A2 (en) | Component stacking for integrated circuit electronic package | |
| WO2004080134A2 (en) | High frequency chip packages with connecting elements | |
| KR101653563B1 (en) | Stack type semiconductor package and method for manufacturing the same | |
| CN114512789A (en) | Antenna packaging structure and manufacturing method thereof | |
| CN114078823A (en) | Fan-out type packaging structure and manufacturing method thereof | |
| US7745907B2 (en) | Semiconductor package including connector disposed in troughhole | |
| KR20240041894A (en) | Selective emi shielding using preformed mask with fang design | |
| WO2004105134A1 (en) | An integrated circuit package | |
| CN215680683U (en) | Semiconductor package | |
| KR101799667B1 (en) | Semiconductor Device Module And Method For Fabricating The Same | |
| CN219350227U (en) | Radio frequency system module packaging structure with filter | |
| US11227813B2 (en) | Electronic apparatus | |
| US7635642B2 (en) | Integrated circuit package and method for producing it | |
| CN219018789U (en) | Cavity filter packaging structure, circuit board and electronic product | |
| KR20050027384A (en) | Chip size package having rerouting pad and stack thereof | |
| CN221466579U (en) | Chip packaging structure | |
| JP2630294B2 (en) | Hybrid integrated circuit device and method of manufacturing the same | |
| CN118315367A (en) | Stacked package structure and preparation method thereof | |
| TW202431591A (en) | Selective emi shielding using preformed mask with fang design |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |