JP6934322B2 - Electronic components - Google Patents

Description

The present invention relates to an electronic component, for example, an electronic component in which a substrate having a functional element is mounted on the substrate.

A surface acoustic wave element such as a piezoelectric thin film resonator (FBAR) or a surface acoustic wave (SAW) resonator processes a radio signal in the frequency band of 45 MHz to 4 GHz represented by a mobile phone. It is used as a band path filter in various circuits. As a method for mounting a functional element such as an elastic wave element, it is known that a chip having a functional element on the lower surface is flip-chip mounted on a substrate (for example, Patent Documents 1 and 2).

JP-A-2010-245739 Japanese Unexamined Patent Publication No. 2006-203149

For example, electronic components having elastic wave elements and the like are required to be miniaturized as mobile phones, smartphones and the like become multifunctional. On the other hand, with the increase in power of power amplifiers for transmitting radio waves, high power withstand is required. In order to reduce the size of electronic components and increase the power resistance, it is conceivable to improve heat dissipation from functional elements. However, if the functional element faces the upper surface of the substrate through the gap, heat cannot be dissipated from the lower surface of the functional element.

The present invention has been made in view of the above problems, and an object of the present invention is to improve heat dissipation from a functional element.

The present invention has a first substrate having a first surface and a second surface provided with one or more first functional elements, and the one or more first functional elements have a gap with the first surface. A connection provided between a second substrate mounted on the first substrate and the first surface and the second surface so as to sandwich and face each other, and to connect the first substrate and the second substrate. A terminal and one of the first surface and the second surface are provided to surround at least one first functional element of the one or a plurality of first functional elements in a plan view, and the at least one first functional element is surrounded. The distance to the functional element is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the third surface facing the first surface and the other of the second surface sandwiches the gap. A seal having an insulating film and having contact with both the first surface and the second surface between the first surface and the second surface to seal the first functional element in the gap. The stop is an electronic component that is not provided.

In the above configuration, the one or a plurality of first functional elements are a plurality of first functional elements, and the insulating film may be configured to surround the plurality of first functional elements in a plan view.

The present invention has a first substrate having a first surface and a second surface provided with one or more first functional elements, and the one or more first functional elements have a gap with the first surface. A connection provided between a second substrate mounted on the first substrate and the first surface and the second surface so as to sandwich and face each other, and to connect the first substrate and the second substrate. A terminal and one of the first surface and the second surface are provided to surround at least one first functional element of the one or a plurality of first functional elements in a plan view, and the at least one first functional element is surrounded. The distance to the functional element is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the third surface facing the first surface and the other of the second surface sandwiches the gap. The one or a plurality of first functional elements are a plurality of first functional elements, and the insulating film is a part of the first functional element among the plurality of first functional elements in a plan view. It is an electronic component that surrounds one functional element and does not surround the other first functional element.

In the above configuration, the thickness of the insulating film may be ½ or more of the distance between the first surface and the second surface.

In the above configuration, the third surface may be configured so as not to come into contact with the other of the first surface and the second surface.

In the above configuration, each of the one or more first functional elements may be an elastic wave element.

The present invention has a first substrate having a first surface and a second surface provided with a plurality of elastic wave elements so that the plurality of elastic wave elements face the first surface with a gap in between. A second board mounted on the first board, a connection terminal provided between the first surface and the second surface and connecting the first board and the second board, and the first surface. It is provided on either one of the surface and the second surface, surrounds at least one elastic wave element among the plurality of elastic wave elements in a plan view, and the distance between the connection terminal and the at least one elastic wave element is the distance between the connection terminal and the said second surface. An insulating film smaller than a distance from at least one elastic wave element and having a third surface facing the first surface and the other of the second surface with at least a part sandwiching the gap, and an input terminal and an output terminal. and one or more series resonators that are part of the serially connected plurality of acoustic wave element between another of said plurality of acoustic wave devices are connected in parallel between the input terminal and the output terminal The insulating film surrounds at least one of the one or more series resonators, and the one or more series resonators and said It is an electronic component that does not surround at least a part of another resonator among one or a plurality of parallel resonators.

In the above configuration, in plan view, the insulating film surrounds a series resonator in which series resonators are connected to both sides of the one or more series resonators, and the one or more series resonators and the one or more series resonators. It is possible to configure the parallel resonator so as not to surround at least a part of the other resonators.

The present invention has a first substrate having a first surface and a second surface provided with one or more first functional elements, and the one or more first functional elements have a gap with the first surface. A connection provided between a second substrate mounted on the first substrate and the first surface and the second surface so as to sandwich and face each other, and to connect the first substrate and the second substrate. A terminal and one of the first surface and the second surface are provided to surround at least one first functional element of the one or a plurality of first functional elements in a plan view, and the at least one first functional element is surrounded. The distance to the functional element is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the third surface facing the first surface and the other of the second surface sandwiches the gap. The first surface has an insulating film and a fourth surface provided with one or more second functional elements, and the one or more second functional elements face the first surface with a gap in between. A third substrate mounted on the substrate is provided, and the insulating film is an electronic component not provided between the first surface and the fourth surface.

In the above configuration, a filter including the elastic wave element can be provided.

In the above configuration, the configuration may include a multiplexer including the filter.

According to the present invention, the heat dissipation from the functional element can be improved.

1 (a) is a cross-sectional view of an electronic component according to the first embodiment, FIG. 1 (b) is an enlarged view of a region A of FIG. 1 (a), and FIG. 1 (c) is a modified example of the first embodiment. FIG. 1 (d), which is a cross-sectional view of the electronic component according to FIG. 1, is an enlarged view of a region A of FIG. 1 (c). FIG. 2A is a plan view showing the functional element in the first embodiment, and FIG. 2B is a cross-sectional view showing the functional element in the first modification of the first embodiment. 3 (a) and 3 (b) are cross-sectional views of electronic components according to modifications 2 and 3, respectively, of the first embodiment. 4 (a) is a cross-sectional view of an electronic component according to a modified example 4 of the first embodiment, FIG. 4 (b) is an enlarged view of a region A of FIG. 4 (a), and FIG. 4 (c) is an embodiment. FIG. 4 (d), which is a cross-sectional view of the electronic component according to the modified example 5 of No. 1, is an enlarged view of the region A of FIG. 4 (c). 5 (a) and 5 (b) are cross-sectional views of electronic components according to modifications 6 and 7, respectively, of the first embodiment. 6 (a) and 6 (b) are cross-sectional views of the electronic components according to the modified examples 8 and 9, respectively, of the first embodiment. 7 (a) to 7 (c) are cross-sectional views of a duplexer according to a second embodiment, a modified example 1 of the second embodiment, and a comparative example 1, respectively. FIG. 8A is a circuit diagram of a duplexer according to Example 2, a modification 1 thereof, and Comparative Example 1, and FIG. 8B is a circuit diagram of a transmission filter. FIG. 9 is a plan view of the device chip in the second embodiment, the first modification thereof, and the first comparative example. 10 (a) is a plan view of the substrate in Example 2 and its modified example 1, and FIG. 10 (b) is a plan view of the substrate in Comparative Example 1. FIG. 11 (a) is a diagram showing the maximum temperature with respect to the applied power in Example 2, its modified examples 1, and Comparative Examples 1 and 2, and FIG. 11 (b) is a diagram showing the amount of temperature drop with respect to the applied power. FIG. 12 is a diagram showing the ratio of the amount of temperature drop to the film thickness T1 in the modified example 1 of the second embodiment. FIG. 13 is a plan view of the substrate in the second modification of the second embodiment. FIG. 14 is a plan view of the substrate according to the third modification of the second embodiment. FIG. 15 is a plan view of the substrate in the modified example 4 of the second embodiment. FIG. 16 is a plan view of the substrate in the modified example 5 of the second embodiment.

Examples will be described below with reference to the drawings.

[Example 1 and variant 1 of Example 1]
1 (a) is a cross-sectional view of an electronic component according to the first embodiment, FIG. 1 (b) is an enlarged view of a region A of FIG. 1 (a), and FIG. 1 (c) is a modified example of the first embodiment. FIG. 1 (d), which is a cross-sectional view of the electronic component according to FIG. 1, is an enlarged view of a region A of FIG. 1 (c).

As shown in FIGS. 1A and 1C, the substrate 10 is mounted on the upper surface of the substrate 20. The substrate 20 is an insulating substrate, for example, a ceramic substrate such as HTCC (High Temperature Co-fired Ceramic) or LTCC (Low Temperature Co-fired Ceramic) or a resin substrate. The substrate 20 has a plurality of laminated insulating layers 20a and 20b. Metal layers 28 and 26c are formed on the upper surfaces of the insulating layers 20a and 20b, respectively. A metal layer 24 is formed on the lower surface of the insulating layer 20b. Via wirings 26a and 26b penetrating the insulating layers 20a and 20b are formed. The via wiring 26a electrically connects the metal layers 28 and 26c, and the via wiring 26b electrically connects the metal layers 26c and 24.

The metal layer 28 provided on the upper surface of the substrate 20 is, for example, a pad and wiring to which the bumps 16 are joined. The metal layer 24 is, for example, an external terminal for electrically connecting to the outside, for example, a foot pad. The via wires 26a and 26b and the metal layer 26c form an internal wiring 26 that connects the metal layers 24 and 28. The metal layers 24, 28 and the internal wiring 26 are metal layers such as a copper layer, a gold layer, or an aluminum layer. An insulating film 22 is provided on the upper surface of the substrate 20. The insulating film 22 is, for example, an organic insulator such as resin or an inorganic insulator such as silicon oxide. When the insulating film 22 is a resin film, the insulating film 22 is formed on the substrate 20 by a printing method, for example, and is dried by heat treatment.

The device chip 11 has a substrate 10, a functional element 12, and a metal layer 18. The functional element 12 and the metal layer 18 are provided on the lower surface of the substrate 10. The functional element 12 is a surface acoustic wave element in FIGS. 1 (a) and 1 (b), and a piezoelectric thin film resonator in FIGS. 1 (c) and 1 (d). The metal layer 18 is a pad and wiring to which the bump 16 is joined.

The device chip 11 is flip-chip (face-down) mounted on the substrate 20 via the bump 16. The functional element 12 faces the upper surface of the substrate 20 with the gap 14 interposed therebetween. Since the functional element 12 is exposed in the gap 14, vibration of the functional element 12 and the like are not suppressed. The bump 16 is, for example, a copper bump, a gold bump or a solder bump. The insulating film 22 is provided so as to surround the functional element 12 in a plan view, and does not overlap with the functional element 12. A gap 14 is provided between the insulating film 22 and the lower surface of the substrate 10.

As shown in FIGS. 1B and 1D, the distance between the upper surface of the substrate 20 and the lower surface of the substrate 10 is L1, the distance between the upper surface of the insulating film 22 and the lower surface of the substrate 10 is L2, and the insulating film 22. The film thickness is T1, and the distance between the functional element 12 and the insulating film 22 is L3. The distance L3 is smaller than the distance L1. Further, for example, L1> T1 ≧ L1 / 2 and T1 ≧ L2. As a result, the heat generated in the functional element 12 can be released through the insulating film 22.

FIG. 2A is a plan view showing the functional element in the first embodiment, and FIG. 2B is a cross-sectional view showing the functional element in the first modification of the first embodiment. As shown in FIG. 2A, an IDT (Interdigital Transducer) 40 and a reflector 42 are formed on the substrate 10. The IDT 40 has a pair of comb-shaped electrodes 40a facing each other. The comb-shaped electrode 40a has a plurality of electrode fingers 40b and a bus bar 40c for connecting the plurality of electrode fingers 40b. Reflectors 42 are provided on both sides of the IDT 40. IDT40 excites surface acoustic waves on the substrate 10. The substrate 10 is a piezoelectric substrate such as a lithium tantalate substrate or a lithium niobate substrate. The IDT 40 and the reflector 42 are formed of, for example, an aluminum film or a copper film. The substrate 10 may be bonded to the lower surface of a support substrate such as a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate. A protective film or a temperature compensation film may be provided to cover the IDT 40 and the reflector 42. In this case, it functions as a functional element 12 including a protective film or a temperature compensation film.

As shown in FIG. 2B, the piezoelectric film 46 is provided on the substrate 10. The lower electrode 44 and the upper electrode 48 are provided so as to sandwich the piezoelectric film 46. A gap 45 is formed between the lower electrode 44 and the substrate 10. The lower electrode 44 and the upper electrode 48 excite elastic waves in the thickness longitudinal vibration mode in the piezoelectric film 46. The lower electrode 44 and the upper electrode 48 are metal films such as a ruthenium film. The piezoelectric film 46 is, for example, an aluminum nitride film. The substrate 10 is, for example, a silicon substrate, a semiconductor substrate such as gallium arsenide, or an insulating substrate such as a sapphire substrate, an alumina substrate, a spinel substrate, or a glass substrate. As shown in FIGS. 2A and 2B, the functional element 12 includes an electrode that excites an elastic wave. Therefore, the functional element 12 is covered with a gap 14 so as not to regulate elastic waves.

[Modifications 2 and 3 of Example 1]
3 (a) and 3 (b) are cross-sectional views of electronic components according to modifications 2 and 3, respectively, of the first embodiment. As shown in FIGS. 3A and 3B, a sealing portion 30 is provided so as to surround the substrate 10 in a plan view. The sealing portion 30 is joined to the upper surface of the substrate 20. A lid 32 is provided on the sealing portion 30 and the substrate 10. The sealing portion 30 is an insulator such as a metal such as solder or a resin. The lid 32 is a metal plate or an insulating plate. The sealing portion 30 airtightly seals the functional element 12 in the gap 14. Other configurations are the same as those of the first embodiment and the first modification thereof, and the description thereof will be omitted.

[Modified Examples 4 and 5 of Example 1]
4 (a) is a cross-sectional view of an electronic component according to a modified example 4 of the first embodiment, FIG. 4 (b) is an enlarged view of a region A of FIG. 4 (a), and FIG. 4 (c) is an embodiment. FIG. 4 (d), which is a cross-sectional view of the electronic component according to the modified example 5 of No. 1, is an enlarged view of the region A of FIG. 4 (c).

As shown in FIGS. 4A and 4C, the insulating film 22 is provided on the lower surface of the substrate 10, and a gap 14 is provided between the lower surface of the insulating film 22 and the upper surface of the substrate 20.

As shown in FIGS. 4 (b) and 4 (d), the distance between the upper surface of the substrate 20 and the lower surface of the functional element 12 is L1, the distance between the lower surface of the insulating film 22 and the upper surface of the substrate 20 is L2, and the insulating film 22. The film thickness is T1, and the distance between the functional element 12 and the insulating film 22 is L3. The distance L3 is sufficiently smaller than the distance L1. Further, for example, L1> T1 ≧ L1 / 2 and T1 ≧ L2. As a result, the heat generated in the functional element 12 can be released through the insulating film 22. Other configurations are the same as those of the first embodiment and the first modification thereof, and the description thereof will be omitted.

[Modified Examples 6 and 7 of Example 1]
5 (a) and 5 (b) are cross-sectional views of electronic components according to modifications 6 and 7, respectively, of the first embodiment. As shown in FIGS. 5A and 5B, a sealing portion 30 is provided so as to surround the substrate 10 in a plan view, as in the modifications 2 and 3 of the first embodiment. Other configurations are the same as the modifications 2 and 3 of the first embodiment, and the description thereof will be omitted.

[Modified Examples 8 and 9 of Example 1]
6 (a) and 6 (b) are cross-sectional views of the electronic components according to the modified examples 8 and 9, respectively, of the first embodiment. As shown in FIG. 6A, a part of the upper surface of the insulating film 22 is in contact with the lower surface of the metal layer 18 provided on the lower surface of the substrate 10 in the region 50. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

As shown in FIG. 6B, a part of the lower surface of the insulating film 22 is in contact with the upper surface of the substrate 20 in the region 50. Other configurations are the same as those of the modified example 4 of the first embodiment, and the description thereof will be omitted. As in the modified examples 8 and 9 of the first embodiment, a part of the upper surface of the insulating film 22 may be in contact with the lower surface of the substrate 10, or a part of the lower surface of the insulating film 22 is in contact with the upper surface of the substrate 20. You may be doing it.

[Example 2, Modified Example 1 of Example 2 and Comparative Example 1]
Example 2 and its modifications are examples of duplexers. 7 (a) to 7 (c) are cross-sectional views of a duplexer according to a second embodiment, a modified example 1 of the second embodiment, and a comparative example 1, respectively. As shown in FIG. 7A, in the second embodiment, the device chips 11a and 11b are flip-chip mounted on the substrate 20. In the device chips 11a and 11b, functional elements 12a and 12b are provided on the lower surfaces of the substrates 10a and 10b, respectively. An annular metal layer 29 is provided on the upper surface of the substrate 20 so as to surround the device chips 11a and 11b.

A sealing portion 30 is provided so as to surround the device chips 11a and 11b. The sealing portion 30 is solder and is bonded to the annular metal layer 29. A lid 32 is provided on the upper surfaces of the sealing portion 30, the device chips 11a and 11b. The insulating film 22 is provided on the upper surface of the substrate 20 and surrounds the functional element 12a and the bump 16 in a plan view. The insulating film 22 is not provided in the region corresponding to the device chip 11b. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

As shown in FIG. 7B, in the first modification of the second embodiment, the insulating film 22 is provided on the lower surface of the substrate 10a. Other configurations are the same as those in the second embodiment, and the description thereof will be omitted.

As shown in FIG. 7C, in Comparative Example 1, the insulating film 22 is provided on the upper surface of the substrate 20. The insulating film 22 overlaps the functional element 12a in a plan view. Other configurations are the same as those in the second embodiment, and the description thereof will be omitted.

FIG. 8A is a circuit diagram of a duplexer according to Example 2, a modification 1 thereof, and Comparative Example 1, and FIG. 8B is a circuit diagram of a transmission filter. As shown in FIG. 8A, a transmission filter 60 is provided between the common terminal Ant and the transmission terminal Tx. A reception filter 62 is provided between the common terminal Ant and the reception terminal Rx. The transmission filter 60 passes the transmission signal among the high frequency signals input from the transmission terminal Tx through the common terminal Ant and suppresses signals of other frequencies. The reception filter 62 passes the received signal among the high frequency signals input from the common terminal Ant through the receiving terminal Rx and suppresses signals of other frequencies. The transmission filter 60 is formed on the device chip 11a and includes a functional element 12a. The reception filter 62 is formed on the device chip 11b and includes a functional element 12b.

As shown in FIG. 8B, the transmission filter 60 has series resonators S1 to S4 and parallel resonators P1 to P3. The series resonators S1 to S4 are connected in series between the transmission terminal Tx and the common terminal Ant. The parallel resonators P1 to P3 are connected in parallel between the transmission terminal Tx and the common terminal Ant.

FIG. 9 is a plan view of the device chip in the second embodiment, the first modification thereof, and the first comparative example. FIG. 5 is a plan view of the lower surface of the device chip 11a as seen through from above. As shown in FIG. 9, a plurality of functional elements 12a and a metal layer 18 are provided on the lower surface of the substrate 10a. The functional element 12a is a surface acoustic wave resonator shown in FIG. 2 (a). The plurality of functional elements 12a include series resonators S1 to S4 and parallel resonators P1 to P3. The metal layer 18 is a wiring and a pad. Wiring connects a plurality of functional elements 12a. The pad is connected to the functional element 12a. The pad is provided with a bump 16. The bump 16 corresponds to the common terminal Ant, the transmission terminal Tx, and the ground terminal Gnd.

FIG. 10A is a plan view of the substrate in the second embodiment and the first modification thereof. The insulating film 22 is shown by a thick dashed line, the device chips 11a and 11b are shown by a broken line, and the resonator in the device chip 11a is shown by a broken line. As shown in FIG. 10A, in the second embodiment and the first modification thereof, a metal layer 28 and an annular metal layer 29 are provided on the upper surface of the substrate 20. The annular metal layer 29 is provided on the peripheral edge of the upper surface of the substrate 20. The metal layer 28 is a wiring and a pad. Wiring connects the pads. The pad is provided with a bump 16. The bump 16 corresponds to the common terminal Ant, the transmission terminal Tx, the reception terminal Rx, and the ground terminal Gnd.

The insulating film 22 overlaps with the device chip 11a in a plan view and does not overlap with the device chip 11b. The insulating film 22 does not overlap with the series resonators S1 to S4 and the parallel resonators P1 to P3, and surrounds these resonators.

FIG. 10B is a plan view of the substrate in Comparative Example 1. As shown in FIG. 10B, in Comparative Example 1, the insulating film 22 overlaps with the device chip 11a other than the bump 16 in a plan view, and also overlaps with the series resonators S1 to S4 and the parallel resonators P1 to P3. ..

The temperature inside the substrate 10a was simulated. The simulation conditions are as follows. The substrates 10a and 10b were made into a 42 ° rotating Y-cut X-propagated lithium tantalate substrate having a thickness of 150 μm. The substrate 20 was an LTCC substrate having a thickness of 166 μm. The sealing portion 30 was made of AgSn solder. The distance L1 between the upper surface of the substrate 20 and the lower surface of the substrate 10a was set to 20 μm. The thickness of the electrode finger of the surface acoustic wave resonator, which is the functional element 12a, is less than 1 μm. The lid 32 was a coval plate having a film thickness of 60 μm. The insulating film 22 is a resin film having a thermal conductivity of about 0.25 W / m · K. The film thickness T1 of the insulating film 22 was 19 μm in Example 1 and its modifications, and 15 μm in Comparative Example 1. The distance L3 between the functional element 12a and the insulating film 22 in a plan view was set to 5 μm.

The transmission filter 60 and the reception filter 62 are transmission filters and reception filters of band 8 (transmission band: 880-915 MHz, reception band: 925-960 MHz) of the E-UTRA (Evolved Universal Terrestrial Radio Access) Operating Band. A band 8 transmission signal was input to the transmission terminal Tx. The applied power was 28 dBm, 30 dBm and 32 dBm. The common terminal Ant and the receiving terminal Rx were terminated to 50Ω. The maximum temperature of the lower surface in the substrate 10a was simulated.

As Comparative Example 2, a simulation was also performed when the insulating film 22 was not provided.

FIG. 11 (a) is a diagram showing the maximum temperature with respect to the applied power in Example 2, its modified examples 1, and Comparative Examples 1 and 2, and FIG. 11 (b) is a diagram showing the amount of temperature drop with respect to the applied power. The amount of temperature drop is the temperature obtained by subtracting the temperatures of Example 2, the modified examples 1 thereof, and Comparative Example 1 from the temperature of Comparative Example 2 (without the insulating film 22).

As shown in FIGS. 11 (a) and 11 (b), in the second embodiment, the modified examples 1 and the comparative example 2 of the second embodiment, the temperature is lowered to the same extent as that of the comparative example 2. The portion of the lower surface of the substrate 10a that has the highest temperature is the portion corresponding to the series resonator S2 in FIG.

In the modified example 1 of the second embodiment, the temperature was simulated by changing the film thickness T1 of the insulating film 22. FIG. 12 is a diagram showing the ratio of the amount of temperature drop to the film thickness T1 in the modified example 1 of the second embodiment. The film thickness T1 of the insulating film 22 was set to 20 μm, and Comparative Example 3 in which the entire lower surface of the insulating film 22 was in contact with the upper surface of the substrate 20 was used as a reference. The temperature drop amount of Comparative Example 3 with respect to Comparative Example 2 without the insulating film 22 is set to 1, and the temperature drop amount is standardized as the ratio of the temperature drop amount. The applied power was 28 dBm.

As shown in FIG. 12, as the film thickness T1 increases, the ratio of the amount of temperature drop increases. When the film thickness T1 exceeds 10 μm, the rate of temperature drop increases sharply, when the film thickness T1 is 15 μm or more, the rate of temperature drop is 0.4 or more, and when the film thickness T1 is 18 μm or more, the temperature drop rate. The ratio of is 0.6 or more.

According to Examples 1 and 2, modifications thereof, and Comparative Example 2, one or more functional elements 12 or 12a (first functional element) are placed on the lower surface (second surface) of the substrate 10 or 10a (second substrate). It is provided. The substrate 10 or 10a is mounted on the substrate 20 so that the functional element 12 or 12a faces the upper surface (first surface) of the substrate 20 (first substrate) with the gap 14 interposed therebetween. The bump 16 (connection terminal) is provided between the upper surface of the substrate 20 and the substrate 10 or 10a, and connects the substrate 20 and the substrate 10 or 10a.

In such an electronic component, as in Comparative Example 2, the gap 14 prevents the heat generated in the functional element 12a from being released. Therefore, as in Comparative Example 1, the insulating film 22 is provided so as to face the functional element 12a. As a result, the heat generated in the functional element 12a is transmitted to the insulating film 22 by radiation and convection, and is conducted to the substrate 20 via the insulating film 22. Therefore, as shown in FIGS. 11A and 11B, the temperature rise of the substrate 10a can be suppressed as compared with Comparative Example 2.

In Comparative Example 1, it is preferable to make the insulating film 22 thicker in order to improve heat dissipation. However, the height of the bump 16 has a large manufacturing variation. When the upper surface of the insulating film 22 comes into contact with the functional element 12a, there is no point in providing the gap 14. Therefore, assuming that the bump 16 becomes low, the insulating film 22 cannot be thickened in order to secure a manufacturing margin. Further, when the insulating film 22 faces the functional element 12a, the characteristics (for example, high frequency characteristics) of the functional element 12a deteriorate.

In Examples 1 and 2 and modifications thereof, the insulating film 22 is provided on either the upper surface of the substrate 20 or the lower surface of the substrate 10 or 10a, and one or a plurality of functional elements 12 or 12a are provided in a plan view. surround. As a result, it is possible to prevent the insulating film 22 from coming into contact with the functional element 12 or 12a even if the bump 16 is lowered. In addition, deterioration of the characteristics due to the insulating film 22 can be suppressed. The minimum distance L3 between the insulating film 22 and the functional element 12 or 12a is made closer than the minimum distance between the bump 16 and the functional element 12 or 12a. As a result, the heat generated in the functional element 12 or 12a is efficiently transferred to the insulating film 22. Therefore, the heat dissipation from the functional element 12 or 12a can be improved.

When the insulating film 22 is provided on the upper surface of the substrate 20, when the entire upper surface of the insulating film 22 comes into contact with the lower surface of the substrate 10 or 10a, the height of the bump 16 is limited by the film thickness T1 of the insulating film 22. NS. When the insulating film 22 is provided on the lower surface of the substrate 10 or 10a, when the entire lower surface of the insulating film 22 comes into contact with the upper surface of the substrate 20, the height of the bump 16 is limited by the film thickness T1 of the insulating film 22. NS. As a result, the bonding strength between the bump 16 and the substrate 10a and / or the substrate 20 may be reduced. Further, the insulating film 22 may come into contact with the wiring on which the high frequency signal propagates on the lower surface of the substrate 10a or the upper surface of the substrate 20. This can lead to deterioration of the characteristics.

Therefore, when the insulating film 22 is provided on the upper surface of the substrate 20, at least a part of the upper surface (third surface) of the insulating film 22 faces the lower surface of the substrate 10 or 10a with the gap 14 interposed therebetween. When the insulating film 22 is provided on the lower surface of the substrate 10 or 10a, at least a part of the lower surface (third surface) of the insulating film 22 faces the upper surface of the substrate 20 with the gap 14 interposed therebetween. Thereby, the bonding strength of the bump 16 can be increased and / or the deterioration of the characteristics can be suppressed. When a metal film is used instead of the insulating film 22, the metal film is provided near the functional element 12a. Therefore, the characteristics of the functional element 12a deteriorate.

In order to efficiently dissipate heat from the functional element 12 or 12a, the film thickness T1 of the insulating film 22 is preferably ½ or more of the distance L1. T1 is preferably 75% or more, more preferably 90% or more of L1. The distance L2 between the lower surface of the functional element 12 or 12a and the upper surface of the insulating film 22 is preferably T1 or less, more preferably T1 / 2 or less, and even more preferably T1 / 4 or less.

In order to efficiently dissipate heat from the functional element 12 or 12a, the distance L3 is preferably 1/2 or less, more preferably 1/4 or less of the distance between the bump 16 and the functional element 12a. Alternatively, the distance L3 is preferably 1/2 or less, more preferably 1/4 or less of the distance L1.

The thermal conductivity of the insulating film 22 may be larger than the thermal conductivity of air, 0.025 W / m · K, but in order to further enhance the heat dissipation effect, it is preferably 5 times or more, preferably 10 times or more the thermal conductivity of air. The above is more preferable. As the insulating film 22 having a large thermal conductivity, epoxy resin, polyimide resin, silicone, solder resist, boron nitride, aluminum nitride, zinc oxide, silicon oxide or the like can be used. The insulating film 22 is preferably in direct contact with the upper surface of the substrate 20 in order to improve heat dissipation.

The insulating film 22 may completely surround the functional element 12 or 12a in a plan view, or may partially surround the functional element 12 or 12a. For example, when the planar shape of the functional element 12 or 12a is a quadrangle, the insulating film 22 may surround three of the four sides of the functional element 12a or 12a.

As in the second embodiment and the first modification thereof, it is preferable that the insulating film 22 surrounds each of the plurality of functional elements 12a in a plan view. As a result, heat dissipation can be improved.

As in the modified example 8 of the first embodiment, a part of the upper surface of the insulating film 22 may come into contact with the lower surface of the substrate 10 (the lower surface of the metal layer 18). As in the modified example 9 of the first embodiment, a part of the lower surface of the insulating film 22 may come into contact with the upper surface of the substrate 20. However, from the viewpoint of the bonding strength of the bump 16, when the insulating film 22 is provided on the upper surface of the substrate 20, it is preferable that the upper surface of the insulating film 22 does not come into contact with the lower surface of the substrate 10 or 10a. When the insulating film 22 is provided on the lower surface of the substrate 10 or 10a, it is preferable that the lower surface of the insulating film 22 does not come into contact with the upper surface of the substrate 20.

[Modification 2 of Example 2]
FIG. 13 is a plan view of the substrate in the second modification of the second embodiment. As shown in FIG. 13, the insulating film 22 does not overlap the metal layer 28 connected to the common terminal Ant and the transmission terminal Tx on the upper surface of the substrate 20. When the insulating film 22 overlaps with the metal layer 28 on which the high frequency signal propagates provided on the upper surface of the substrate 20, the high frequency characteristics deteriorate. Therefore, the insulating film 22 does not overlap with the metal layer 28 as in the modified example 2 of the second embodiment. As a result, deterioration of the characteristics can be suppressed. Other configurations are the same as those of the second embodiment and the first modification thereof, and the description thereof will be omitted.

[Modification 3 of Example 2]
FIG. 14 is a plan view of the substrate according to the third modification of the second embodiment. As shown in FIG. 14, the insulating film 22 does not overlap with all of the metal layers 28. In the region where the insulating film 22 overlaps the metal layer 28, the upper surface of the insulating film 22 may come into contact with the functional element 12a and / or the metal layer 18. As a result, the characteristics of the functional element 12a may deteriorate. Therefore, the insulating film 22 does not overlap with all the metal layers 28 as in the modified example 2 of the second embodiment. As a result, deterioration of the characteristics can be suppressed. Other configurations are the same as those of the second embodiment and the first modification thereof, and the description thereof will be omitted.

In the modifications 2 and 3 of the second embodiment, the example in which the insulating film 22 does not overlap with the metal layer 28 has been described, but if the insulating film 22 overlaps with the metal layer 18 on the lower surface of the substrate 10a on which the high frequency signal propagates. It does not have to be. Further, the insulating film 22 does not have to overlap with all the metal layers 18 provided on the lower surface of the substrate 10a.

[Modification 4 of Example 2]
FIG. 15 is a plan view of the substrate in the modified example 4 of the second embodiment. The resonator having the highest temperature is the series resonator S2. Therefore, as shown in FIG. 15, the insulating film 22 is provided so as to surround the series resonators S1 to S3 and the parallel resonators P1 and P2 adjacent to the series resonator S2 in a plan view, and is not adjacent to the series resonator S2. It is not provided so as to surround the series resonator S4 and the parallel resonator P3. As a result, heat can be efficiently dissipated from the series resonator S2, and deterioration of characteristics due to the insulating film 22 approaching the resonator can be suppressed. Other configurations are the same as those of the second embodiment and the first modification thereof, and the description thereof will be omitted.

[Modification 5 of Example 2]
FIG. 16 is a plan view of the substrate in the modified example 5 of the second embodiment. As shown in FIG. 16, the insulating film 22 is provided so as to surround the series resonator S2 in a plan view and not to surround the series resonators S1, S3, S4 and the parallel resonators P1 to P3. As a result, heat can be efficiently dissipated from the series resonator S2, and deterioration of characteristics due to the insulating film 22 approaching the resonator can be suppressed. Other configurations are the same as those of the second embodiment and the first modification thereof, and the description thereof will be omitted.

As in the modifications 4 and 5 of the second embodiment, the insulating film 22 is provided so as to surround a part of each of the plurality of functional elements 12a in a plan view and not to surround the other of the plurality of functional elements 12a. As a result, heat dissipation can be improved and deterioration of characteristics can be suppressed.

In the ladder type filter, the series resonator generates more heat than the parallel resonator. Therefore, the insulating film 22 surrounds at least one of one or more series resonators S1 to S4 in a plan view, and one or more series resonators S1 to S4 and one or more parallel resonators P1 to P3. Do not enclose at least part of the other resonator. As a result, heat dissipation can be improved and deterioration of characteristics can be suppressed.

Further, the resonator in which the series resonators are connected to both sides of the series resonators S1 to S4 tends to generate heat. Therefore, the insulating film 22 surrounds the series resonator S2 in which the series resonators S1 and S3 are connected to both sides of the one or more series resonators S1 to S4, and one or more series resonators S1 to SS4 and 1 or Do not surround the plurality of parallel resonators P1 to P3 with at least a part of other resonators. As a result, heat dissipation can be improved and deterioration of characteristics can be suppressed.

In the second embodiment and its modifications, the device chip 11a that generates heat is a chip provided with the transmission filter 60. Therefore, the insulating film 22 is not provided between the upper surface of the substrate 20 and the lower surface (fourth surface) of the substrate 10b (third substrate) provided with the receiving filter 62. As a result, deterioration of characteristics can be suppressed and heat dissipation can be improved.

Although the functional elements 12a and 12b have described examples of surface acoustic wave resonators as Examples 2 and its modifications, the functional elements 12a and 12b may be piezoelectric thin film resonators. The number of series resonators and parallel resonators of the ladder type filter can be set arbitrarily. A ladder type filter has been described as an example of the filter, but the filter may be a multiple mode filter. Although the example of a duplexer has been described as a multiplexer, a triplexer or a quadplexer may be used.

In Examples 1 and 2 and modifications thereof, the functional element 12 or 12a may be an active element such as an amplifier and / or a switch. Further, the functional element 12 or 12a may be a passive element such as an inductor and / or a capacitor. Further, the functional element 12 or 12b may be a MEMS (Micro Electro Mechanical Systems) element.

Although the examples of the present invention have been described in detail above, the present invention is not limited to such specific examples, and various modifications and modifications are made within the scope of the gist of the present invention described in the claims. It can be changed.

10, 10a, 10b, 20 Substrate 11, 11a, 11b Device chip 12, 12a, 12b Functional element 14 Void 16 Bump 18, 28 Metal layer 22 Insulating film 60 Transmission filter 62 Reception filter

Claims (11)

A first substrate having a first surface and
It has a second surface provided with one or more first functional elements, and the one or more first functional elements are mounted on the first substrate so as to face the first surface with a gap in between. 2nd board and
A connection terminal provided between the first surface and the second surface and connecting the first substrate and the second substrate,
It is provided on either one of the first surface and the second surface, surrounds at least one first functional element of the one or a plurality of first functional elements in a plan view, and is formed with the at least one first functional element. Is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the insulating film has a third surface facing the first surface and the other of the second surface with the gap in between. When,
Equipped with
An electronic component that is not provided with a sealing portion between the first surface and the second surface that contacts both the first surface and the second surface and seals the first functional element in the gap. .. The one or more first functional elements are a plurality of first functional elements, and the first functional element is a plurality of first functional elements.
The electronic component according to claim 1, wherein the insulating film surrounds each of the plurality of first functional elements in a plan view. A first substrate having a first surface and
It has a second surface provided with one or more first functional elements, and the one or more first functional elements are mounted on the first substrate so as to face the first surface with a gap in between. 2nd board and
A connection terminal provided between the first surface and the second surface and connecting the first substrate and the second substrate,
It is provided on either one of the first surface and the second surface, surrounds at least one first functional element of the one or a plurality of first functional elements in a plan view, and is formed with the at least one first functional element. Is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the insulating film has a third surface facing the first surface and the other of the second surface with the gap in between. When,
Equipped with
The one or more first functional elements are a plurality of first functional elements, and the first functional element is a plurality of first functional elements.
In a plan view, the insulating film is an electronic component that surrounds a part of the first functional elements of the plurality of first functional elements and does not surround the other first functional elements. A first substrate having a first surface and
A second substrate mounted on the first substrate so as to have a second surface provided with a plurality of elastic wave elements so that the plurality of elastic wave elements face the first surface with a gap in between.
A connection terminal provided between the first surface and the second surface and connecting the first substrate and the second substrate,
It is provided on either one of the first surface and the second surface, surrounds at least one elastic wave element among the plurality of elastic wave elements in a plan view, and the distance from the at least one elastic wave element is the connection. An insulating film having a third surface that is smaller than the distance between the terminal and the at least one elastic wave element and has at least a part sandwiching the gap and facing the other of the first surface and the second surface.
One or more series resonators connected in series between the input terminal and the output terminal and are a part of the plurality of elastic wave elements.
One or more parallel resonators connected in parallel between the input terminal and the output terminal and which are another part of the plurality of elastic wave elements.
Equipped with
In plan view, the insulating film surrounds at least one of the one or more series resonators, and at least a part of the one or more series resonators and the other resonator among the one or more parallel resonators. Electronic components that do not surround. In plan view, the insulating film surrounds a series resonator in which series resonators are connected to both sides of the one or more series resonators, and the one or more series resonators and the one or more parallel resonators. The electronic component according to claim 4 , wherein at least a part of the other resonator is not enclosed. A first substrate having a first surface and
It has a second surface provided with one or more first functional elements, and the one or more first functional elements are mounted on the first substrate so as to face the first surface with a gap in between. 2nd board and
A connection terminal provided between the first surface and the second surface and connecting the first substrate and the second substrate,
It is provided on either one of the first surface and the second surface, surrounds at least one first functional element of the one or a plurality of first functional elements in a plan view, and is formed with the at least one first functional element. Is smaller than the distance between the connection terminal and the at least one first functional element, and at least a part of the insulating film has a third surface facing the first surface and the other of the second surface with the gap in between. When,
It has a fourth surface provided with one or more second functional elements, and the one or more second functional elements are mounted on the first substrate so as to face the first surface with a gap in between. Also equipped with a third substrate
The insulating film is an electronic component that is not provided between the first surface and the fourth surface. The electronic component according to any one of claims 1 to 3 and 6 , wherein the one or a plurality of first functional elements are elastic wave elements, respectively. The electronic component according to any one of claims 1 to 7 , wherein the thickness of the insulating film is ½ or more of the distance between the first surface and the second surface. The electronic component according to any one of claims 1 to 8 , wherein the third surface does not come into contact with the other of the first surface and the second surface. The electronic component according to claim 7 , further comprising a filter including the elastic wave element. The electronic component according to claim 10, further comprising a multiplexer including the filter.

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