JP6954701B1 - Elastic wave device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a metal pattern having better heat dissipation, excellent adhesion between a sealing portion and a wiring substrate, and a metal pattern through which an electric signal in a desired frequency band passes, and a metal pattern in which an electric signal in a desired frequency band does not pass. Provided is an elastic wave device having excellent characteristics in which coupling is unlikely to occur. A wiring board, a device chip mounted on the wiring board, a metal pattern formed on an extension portion on the wiring board, and a sealing portion for hermetically sealing the device chip are provided. , The metal pattern has an uneven shape portion or a jagged shape portion, and the sealing portion is an elastic wave device bonded to both the metal pattern and the wiring board. [Selection diagram] Fig. 2

Description

The present invention relates to elastic wave devices.

Smartphones and the like represented by mobile communication terminals are required to support communication in a plurality of high frequency bands. For this reason, a front-end module equipped with a plurality of bandpass filters that pass communication in a high frequency band is used.

In addition, elastic wave devices such as bandpass filters, duplexers, and quattroplexers are used in front-end modules.

Patent Document 1 discloses an example of a technique relating to an elastic wave device.

JP-A-2019-54354

The main problem to be solved by the present invention will be described.

In elastic wave devices such as bandpass filters and duplexers, device chips such as SAW filters are flip-chip bonded to a wiring board.

The resonator constituting the SAW filter forms a hollow region for mechanical vibration, and is sealed with a synthetic resin, metal, or the like.

Since the resonator of an elastic wave device generates heat due to mechanical vibration or the like, a package structure having good heat dissipation is desired.

Further, in order to suppress the infiltration of water into the sealed hollow region, it is desired that the sealing portion and the wiring board have high adhesion.

Further, it is desired that the metal pattern through which the electric signal of the desired frequency band passes and the metal pattern through which the electric signal of the desired frequency band does not pass are considered so as not to cause a coupling phenomenon or the like.

If the heat dissipation is poor, the characteristics will be deteriorated and the withstand power life will be shortened. Further, if the adhesion between the sealing portion and the wiring board is low, rust or the like is likely to occur in the metal inside, resulting in deterioration of characteristics, deterioration of life, and the like. Moreover, when the coupling phenomenon occurs, the characteristics deteriorate.

The present invention has been made in view of the above problems, and has better heat dissipation, excellent adhesion between the sealing portion and the wiring substrate, a metal pattern through which an electric signal in a desired frequency band passes, and a desired metal pattern. It is an object of the present invention to provide an elastic wave device having excellent characteristics in which coupling with a metal pattern through which an electric signal in a frequency band does not pass is unlikely to occur.

In order to achieve the above object, in the present invention,
Wiring board and
The device chip mounted on the wiring board and
The metal pattern formed on the extension portion on the wiring board and
It has a sealing portion for hermetically sealing the device chip, and has a sealing portion.
The metal pattern has an uneven shape portion or a jagged shape portion, and the sealing portion is an elastic wave device bonded to both the metal pattern and the wiring board.

It has an electrode pad formed on the wiring board and electrically connected to the device chip.
In the region of the uneven shape portion or the jagged shape portion adjacent to the electrode pad, the area where the sealing portion and the wiring board are joined may be larger than the area where the sealing portion and the metal pattern are joined. , A form of the present invention.

It has an electrode pad formed on the wiring board and electrically connected to the device chip.
The area where the sealing portion and the wiring board are joined in the region of the concave-convex shape portion or the jagged shape portion adjacent to the electrode pad is the sealing in the region of the concave-convex shape portion or the jagged shape portion not adjacent to the electrode pad. It is one embodiment of the present invention that the area is smaller than the area where the stop portion and the wiring board are joined.

It has an electrode pad formed on the wiring board and electrically connected to the device chip.
It is the present invention that a plurality of the electrode pads are formed, at least one of the electrode pads has a ground potential, and the electrode pads having a ground potential are electrically connected to the metal pattern. It is considered as one form.

It has an electrode pad formed on the wiring board and electrically connected to the device chip.
The sealing portion and the wiring board in the area of the uneven shape portion or the jagged shape portion formed on the wiring substrate and electrically connected to the electrode pad and adjacent to the element pattern It is one embodiment of the present invention that the area to be joined is larger than the area where the sealing portion and the metal pattern are joined.

It has an electrode pad formed on the wiring board and electrically connected to the device chip.
The sealing portion and the wiring board in the area of the uneven shape portion or the jagged shape portion formed on the wiring substrate and electrically connected to the electrode pad and adjacent to the element pattern One embodiment of the present invention is that the area to be joined is smaller than the area where the sealing portion and the wiring substrate are joined in the region of the uneven shape portion or the jagged shape portion which is not adjacent to the element pattern.

One form of the present invention is that the sealing portion is made of a synthetic resin.

One form of the present invention is that the device chip is a SAW filter.

One embodiment of the present invention is that the device chip is a filter using an acoustic thin film resonator.

One embodiment of the present invention is a duplexer in which two device chips are mounted on the wiring board.

One embodiment of the present invention is that the metal pattern is not formed on the outermost extending portion of the wiring board.

A module including the elastic wave device is one form of the present invention.

According to the present invention, the heat dissipation is better, the adhesion between the sealing portion and the wiring board is excellent, and the metal pattern through which the electric signal in the desired frequency band passes and the electric signal in the desired frequency band do not pass. It is possible to provide an elastic wave device having excellent characteristics in which coupling with a metal pattern is unlikely to occur.

FIG. 1 is a cross-sectional view of the elastic wave device 1 according to this embodiment. FIG. 2 is a diagram showing a configuration example of a main surface on which the device chip 5 of the wiring board 3 is mounted. FIG. 3 is a diagram showing another configuration example of the main surface on which the device chip 5 of the wiring board 3 is mounted. FIG. 4 is a diagram for explaining the configuration of the device chip 5. FIG. 5 is a diagram showing the characteristics of the elastic wave device 1 according to this embodiment and the comparative example. FIG. 6 is a plan view showing an example in which the surface acoustic wave element 52 is an elastic surface wave resonator. FIG. 7 is a cross-sectional view showing an example in which the elastic wave element 52 is a piezoelectric thin film resonator. FIG. 8 is a cross-sectional view of the module 100 according to the second embodiment of the present invention. FIG. 9 is a diagram showing an outline of the circuit configuration of the module 100.

Hereinafter, the present invention will be clarified by explaining specific embodiments of the present invention with reference to the drawings.

FIG. 1 is a cross-sectional view of the elastic wave device 1 according to this embodiment.

As shown in FIG. 1, the elastic wave device 1 according to this embodiment includes a wiring board 3 and two device chips 5 mounted on the wiring board 3.

In this embodiment, an example of an elastic wave device which is a duplexer in which two device chips 5 are mounted will be shown. As a matter of course, a bandpass filter having one device chip 5 is applied to the present invention. It may be an elastic wave device as a quattroplexer, or a quattroplexer on which four device chips 5 are mounted. It is also possible to form a functional element that realizes a duplexer on one device chip.

As the wiring board 3, for example, a multilayer substrate made of resin, a low temperature co-fired ceramics (LTCC) multilayer substrate made of a plurality of dielectric layers, or the like is used. Further, the wiring board 3 includes a plurality of external connection terminals 31.

As the device chip 5, for example, a substrate made of a piezoelectric single crystal such as lithium tantalate, lithium niobate or quartz, or piezoelectric ceramics can be used.

Further, as the device chip 5, a substrate in which a piezoelectric substrate and a support substrate are bonded may be used. As the support substrate, for example, a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate can be used.

A metal pattern 7 and a plurality of electrode pads 9 are formed on the wiring board 3. The metal pattern 7 is formed on the outer extension portion of the wiring board 3. Further, the electrode pad 9 is formed inside the metal pattern 7. For the metal pattern 7 and the electrode pad 9, for example, copper or an alloy containing copper can be used. Further, the metal pattern 7 and the electrode pad 9 can have a thickness of, for example, 10 μm to 20 μm.

A sealing portion 17 is formed so as to cover the device chip 5. The sealing portion 17 may be formed of, for example, an insulator such as a synthetic resin, or a metal may be used. As the synthetic resin, for example, an epoxy resin, a polyimide, or the like can be used, but the synthetic resin is not limited thereto. Preferably, an epoxy resin is used and a low temperature curing process is used to form the sealing portion 17.

The device chip 5 is mounted on the wiring board 3 by flip-chip bonding via the bump 15.

As the bump 15, for example, a gold bump can be used. The height of the bump 15 is, for example, 20 μm to 50 μm.

The electrode pad 9 is electrically connected to the device chip 5 via the bump 15.

FIG. 2 is a diagram showing a configuration example of a main surface on which the device chip 5 of the wiring board 3 is mounted.

As shown in FIG. 2, a metal pattern 7 is formed on the outer extension portion of the wiring board 3. The metal pattern 7 has an uneven shape portion or a jagged shape portion. Further, the metal pattern 7 does not necessarily have to be a continuous metal pattern, and an intermittent portion may be formed.

The solid line indicating the extension of the wiring board 3 and the area AREA 17 sandwiched by the broken line described inside the solid line indicate the area where the sealing portion 17 is joined. The region AREA 17 to be joined by the sealing portion 17 has a region to be joined to the wiring board 3 and a region to be joined to the metal pattern 7 formed on the wiring board 3. That is, the sealing portion 17 (not shown in FIG. 2) is joined to both the wiring board 3 and the metal pattern 7.

The metal pattern 7 enhances the thermal conductivity between the wiring board 3 and the sealing portion 17 and improves the heat dissipation of the elastic wave device. Further, the boundary between the region where the sealing portion 17 is joined to the wiring substrate 3 and the region where the sealing portion 17 is joined to the metal pattern 7 has an uneven shape or a jagged shape, so that the boundary line becomes long. Further, in the concave-convex shape, the sealing portion 17 enters the concave portion of the metal pattern 7, and in the jagged shape, the sealing portion 17 enters the valley portion of the metal pattern 7. As a result, an anchor effect is obtained, and the adhesion between the sealing portion 17 and the wiring board 3 is enhanced.

Further, as shown in FIG. 2, a plurality of electrode pads 9 are formed on the wiring board 3. Some of the electrode pads are electrically connected to the metal pattern 7 and are formed as an electrode pad GND9 which is a ground potential. This makes it possible to strengthen the ground.

Some electrode pads are electrically connected to the element pattern 91. The element pattern 91 can be appropriately formed for the purpose of adding an inductance component, for example.

Further, as shown in FIG. 2, the area ADJ9 indicated by the alternate long and short dash line as the area adjacent to the electrode pad 9 and as the uneven shape portion or the jagged shape portion of the metal pattern 7 is the sealing portion 17 and the wiring board. The area where 3 is joined is larger than the area where the sealing portion 17 and the metal pattern 7 are joined.

As a result, it is possible to secure a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the electrode pad 9 and the metal pattern 7.

Further, as shown in FIG. 2, the sealing portion 17 and the wiring substrate 3 of the region ADJ9 indicated by the alternate long and short dash line as the region adjacent to the electrode pad 9 and which is the concave-convex shape portion or the jagged shape portion of the metal pattern 7. The area to be joined is a region not adjacent to the electrode pad 9, and is a region of the uneven shape portion or the jagged shape portion of the metal pattern 7, and the sealing portion 17 of the region NOTADJ9 indicated by the alternate long and short dash line and the wiring substrate 3 are joined. Smaller than the area.

As a result, it is possible to easily secure an area of the metal pattern 7 sufficient for heat dissipation of the wiring board 3 while securing a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the electrode pad 9 and the metal pattern 7. ..

Further, as shown in FIG. 2, a region adjacent to the element pattern 91, which is a region of the uneven shape portion or the jagged shape portion of the metal pattern 7, the region ADJ91 indicated by the alternate long and short dash line is the sealing portion 17 and the wiring board. The area where 3 is joined is larger than the area where the sealing portion 17 and the metal pattern 7 are joined.

As a result, it is possible to secure a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the element pattern 91 and the metal pattern 7.

Further, as shown in FIG. 2, a region adjacent to the element pattern 91, which is a region of the uneven shape portion or the jagged shape portion of the metal pattern 7, the sealing portion 17 of the region ADJ91 and the wiring substrate 3 indicated by the alternate long and short dash line. The area to be joined is a region not adjacent to the element pattern 91, and is a region of the uneven shape portion or the jagged shape portion of the metal pattern 7, and the sealing portion 17 of the region NOTADJ91 indicated by the alternate long and short dash line and the wiring substrate 3 are joined. Smaller than the area.

As a result, it is possible to easily secure an area of the metal pattern 7 sufficient for heat dissipation of the wiring board 3 while securing a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the element pattern 91 and the metal pattern 7. ..

FIG. 3 is a diagram showing another configuration example of the main surface on which the device chip 5 of the wiring board 3 is mounted.

As shown in FIG. 3, the metal pattern 7 is not formed on the outermost extending portion 10 of the wiring board. With such a structure, the adhesion between the sealing portion 17 and the wiring board 3 is further enhanced. Further, the metal pattern 7 does not necessarily have to be a continuous metal pattern, and an intermittent portion may be formed. Other configurations are the same as those described with reference to FIG.

FIG. 4 is a diagram for explaining the configuration of the device chip 5.

As shown in FIG. 4, an elastic wave element 52 and a wiring pattern 54 are formed on the device chip 5.

An insulator 56 is formed on the wiring pattern 54. As the insulator 56, for example, polyimide can be used. The insulator 56 is formed, for example, with a film thickness of 1000 nm.

A wiring pattern 54 is also formed on the insulator 56, and the wiring is formed so as to intersect three-dimensionally via the insulator 56.

The elastic wave element 52 and the wiring pattern 54 are made of an appropriate metal or alloy such as silver, aluminum, copper, titanium, and palladium. Further, these metal patterns may be formed by a laminated metal film formed by laminating a plurality of metal layers. The thickness of the elastic wave element 52 and the wiring pattern 54 can be, for example, 150 nm to 400 nm.

The wiring pattern 54 includes wiring that constitutes the input pad In, the output pad Out, and the ground pad GND. Further, the wiring pattern 54 is electrically connected to the elastic wave element 52.

As shown in FIG. 4, for example, a bandpass filter can be configured by forming a plurality of elastic wave elements 52. The bandpass filter is designed to pass only the electric signal of the desired frequency band among the electric signals input from the input pad In.

The electric signal input from the input pad In passes through the bandpass filter, and the electric signal in the desired frequency band is output to the output pad Out.

The electric signal output to the output pad Out is output from the external connection terminal 31 of the wiring board 3 via the bump 15 and the electrode pad 9.

FIG. 5 is a diagram showing the characteristics of the elastic wave device 1 according to this embodiment and the comparative example.

The comparative example has the same configuration as the elastic wave device 1 according to the present embodiment except that the metal pattern formed on the wiring board does not have a concave-convex shape portion or a jagged shape portion.

The characteristics of the elastic wave device 1 according to this embodiment are shown by a solid line waveform, and the characteristics of the comparative example are shown by a dotted line.

As shown in FIG. 5, it is clear that the elastic wave device 1 according to the present embodiment has a reduced coupling phenomenon and improved isolation characteristics as compared with the comparative example. In particular, in the band from 1.9 GHz to 2.0 GHz, a remarkable improvement in characteristics was observed.

FIG. 6 is a plan view showing an example in which the surface acoustic wave element 52 is an elastic surface wave resonator.

As shown in FIG. 6, an IDT (Interdigital Transducer) 52a and a reflector 52b for exciting surface acoustic waves are formed on the device chip 5. The IDT 52a has a pair of comb-shaped electrodes 52c facing each other.

The comb-shaped electrode 52c has a bus bar 52e that connects a plurality of electrode fingers 52d and a plurality of electrode fingers 52d. Reflectors 52b are provided on both sides of the IDT 52a.

The IDT 52a and the reflector 52b are made of, for example, an alloy of aluminum and copper. The IDT 52a and the reflector 52b are thin films having a thickness of, for example, 150 nm to 400 nm.

The IDT 52a and the reflector 52b may contain other metals, such as suitable metals such as titanium, palladium, silver, or alloys thereof, or may be formed of these alloys. Further, the IDT 52a and the reflector 52b may be formed of a laminated metal film formed by laminating a plurality of metal layers.

FIG. 7 is a cross-sectional view showing an example in which the elastic wave element 52 is a piezoelectric thin film resonator.

As shown in FIG. 7, the piezoelectric film 62 is provided on the chip substrate 60. The lower electrode 64 and the upper electrode 66 are provided so as to sandwich the piezoelectric film 62. A gap 68 is formed between the lower electrode 64 and the chip substrate 60. The lower electrode 64 and the upper electrode 66 excite elastic waves in the thickness longitudinal vibration mode in the piezoelectric film 62.

As the chip substrate 60, for example, a semiconductor substrate such as silicon or an insulating substrate such as sapphire, alumina, spinel or glass can be used. For the piezoelectric film 62, for example, aluminum nitride can be used.

For the lower electrode 64 and the upper electrode 66, for example, a metal such as ruthenium can be used.

The elastic wave element 52 can be appropriately adopted in a multi-mode filter or a ladder filter so as to obtain desired characteristics as a bandpass filter.

According to one embodiment of the present invention described above, heat dissipation is better, adhesion between the sealing portion and the wiring substrate is excellent, a metal pattern through which an electric signal in a desired frequency band passes, and a desired frequency. It is possible to provide an elastic wave device having excellent characteristics in which coupling with a metal pattern through which an electric signal of a band does not pass is unlikely to occur.

(Example 2)
Next, Example 2 which is another embodiment of the present invention will be described.

FIG. 8 is a cross-sectional view of the module 100 according to the second embodiment of the present invention.

As shown in FIG. 8, the elastic wave device 1 is mounted on the main surface of the wiring board 130. The elastic wave device 1 can be, for example, a dual filter including a first bandpass filter BPF1 and a second bandpass filter BPF2, although not shown.

The wiring board 130 has a plurality of external connection terminals 131. The plurality of external connection terminals 131 are configured to be mounted on the motherboard of a predetermined mobile communication terminal.

A first inductance 111 and a second inductor 112 are mounted on the main surface of the wiring board 130 for impedance matching. The module 100 is sealed by a sealing portion 117 for sealing a plurality of electronic components including the elastic wave device 1.

An integrated circuit component IC is mounted inside the wiring board 130. Although not shown, the integrated circuit component IC includes a switching circuit SW, a first low noise amplifier LNA1 and a second low noise amplifier LNA2.

FIG. 9 is a diagram showing an outline of the circuit configuration of the module 100.

As shown in FIG. 9, the common input terminal 101 (external connection terminal 131) of the module 100 is connected to the antenna terminal ANT. Although not shown, the first output terminal 103 and the second output terminal 105 (external connection terminal 131) are connected to a signal processing circuit.

From the common input terminal 101, the signal passing through the first bandpass filter BPF1 and the signal passing through the second bandpass filter BPF2 are separated by the switching circuit SW.

The signal that has passed through the first bandpass filter BPF1 is impedance-matched by the first inductor 111, amplified by the first low noise amplifier LNA1, and output from the first output terminal 103. Alternatively, when the first bandpass filter BPF1 is a transmission filter, the first output terminal 103 functions as an input terminal, is amplified by the first low noise amplifier LNA1, and has impedance by the first inductor 111. The matched signal passes through the first bandpass filter BPF1 and is transmitted from the antenna terminal.

The signal that has passed through the second bandpass filter BPF2 is impedance-matched by the second inductor 112, amplified by the second low noise amplifier LNA2, and output from the second output terminal 105. Alternatively, when the second bandpass filter BPF2 is a transmission filter, the second output terminal 105 functions as an input terminal, is amplified by the second low noise amplifier LNA2, and has impedance by the second inductor 112. The matched signal passes through the second bandpass filter BPF2 and is transmitted from the antenna terminal.

Other configurations are omitted because they overlap with the contents described in the first embodiment.

According to the embodiment of the present invention described above, the metal pattern has better heat dissipation, the sealing portion and the wiring substrate have excellent adhesion, and the electric signal of the desired frequency band passes through, and the desired frequency band. It is possible to provide a module having an elastic wave device having excellent characteristics in which coupling with a metal pattern through which an electric signal does not pass is unlikely to occur.

As a matter of course, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the object of the present invention.

Also, although some aspects of at least one embodiment have been described above, it should be appreciated that various modifications, modifications and improvements are readily recalled to those skilled in the art.

Such modifications, modifications and improvements are intended to be part of this disclosure and are intended to be within the scope of the present invention. It should be understood that the methods and device embodiments described herein are not limited to application to the details of the structure and arrangement of components described above or illustrated in the accompanying drawings. The methods and devices can be implemented in other embodiments and implemented or implemented in various embodiments. Specific implementation examples are given herein for illustrative purposes only and are not intended to be limited.

Also, the expressions and terms used herein are for explanatory purposes only and should not be considered limiting. The use of "include", "provide", "have", "include" and these variants herein means inclusion of the items listed below and their equivalents and additional items. References to "or (or)" are interpreted so that any term described using "or (or)" refers to one, more than, and all of the terms in the description. Can be done. References to front-back, left-right, top-bottom top-bottom, and horizontal-vertical are all intended for convenience of description, and the components of the present invention are not limited to any one of the positional or spatial orientations. Therefore, the above description and drawings are merely examples.

1 Elastic wave device 3 130 Wiring board 5 Device chip 7 Metal pattern 9 GND9 Electrode pad 10 Outermost extension part 15 Bump 17 117 Sealing part 31 131 External connection terminal 52 Elastic wave element 54 Wiring pattern 56 Inductor 60 Chip substrate 62 piezoelectric film 64 Lower electrode 66 Upper electrode 68 Void 100 Module 101 Common input terminal 103 1st output terminal 105 2nd output terminal 111 1st inductor 112 2nd inductor ANT Antenna terminal SW switching circuit BPF1 1st bandpass filter BPF2 2nd Bandpass filter LNA1 1st low noise amplifier LNA2 2nd low noise amplifier IC integrated circuit component

Claims (12)

Wiring board and
The device chip mounted on the wiring board and
The metal pattern formed on the extension portion on the wiring board and
It has a sealing portion for hermetically sealing the device chip, and has a sealing portion.
The metal pattern has an uneven shape portion or a jagged shape portion, and the sealing portion is an elastic wave device bonded to both the metal pattern and the wiring board. In the region of the concave-convex shape portion or the jagged shape portion formed on the wiring substrate and having an electrode pad electrically connected to the device chip and adjacent to the electrode pad, the sealing portion and the wiring The elastic wave device according to claim 1, wherein the area where the substrates are joined is larger than the area where the sealing portion and the metal pattern are joined. The sealing portion and the wiring board in the area of the uneven shape portion or the jagged shape portion formed on the wiring board and electrically connected to the device chip and adjacent to the electrode pad are formed. The elastic wave device according to claim 1, wherein the area to be joined is smaller than the area where the sealing portion and the wiring board are joined in a region of the uneven shape portion or the jagged shape portion which is not adjacent to the electrode pad. It has an electrode pad formed on the wiring substrate and electrically connected to the device chip, and a plurality of the electrode pads are formed, and at least one of the electrode pads is a ground potential and is grounded. The elastic wave device according to claim 1, wherein the electrode pad of electric potential is electrically connected to the metal pattern. The element having an electrode pad formed on the wiring board and electrically connected to the device chip, having an element pattern formed on the wiring board and electrically connected to the electrode pad, and having an element pattern electrically connected to the electrode pad. The area where the sealing portion and the wiring board are joined in a region of the uneven shape portion or the jagged shape portion adjacent to the pattern is larger than the area where the sealing portion and the metal pattern are joined, according to claim 1. Elastic wave device. The element having an electrode pad formed on the wiring board and electrically connected to the device chip, having an element pattern formed on the wiring board and electrically connected to the electrode pad, and having an element pattern electrically connected to the electrode pad. The area where the sealing portion and the wiring substrate are joined in the region of the concave-convex shape portion or the jagged shape portion adjacent to the pattern is the sealing portion in the region of the concave-convex shape portion or the jagged shape portion not adjacent to the element pattern. The elastic wave device according to claim 1, which is smaller than the area where the wiring substrate and the wiring substrate are joined. The elastic wave device according to claim 1, wherein the sealing portion is made of a synthetic resin. The elastic wave device according to claim 1, wherein the device chip is a SAW filter. The elastic wave device according to claim 1, wherein the device chip is a filter using an acoustic thin film resonator. The elastic wave device according to claim 1, which is a duplexer in which two device chips are mounted on the wiring board. The elastic wave device according to claim 1, wherein the outermost extending portion of the wiring board is not formed with the metal pattern. A module including the elastic wave device according to any one of claims 1 to 11.

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