JP2022169399A - Acoustic wave device, module provided with acoustic wave device, and method for manufacturing acoustic wave device - Google Patents

Abstract

To provide an acoustic wave device capable of reducing a mounting area.SOLUTION: An acoustic wave device includes a wiring board, a first device chip mounted on the wiring board, and a second device chip mounted on the first device chip, The second device chip is electrically connected to the wiring board via a conductive member penetrating through the first device chip. By providing this configuration, it is possible to reduce the mounting surface area of the acoustic wave device.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to an acoustic wave device, a module including the acoustic wave device, and a method of manufacturing the acoustic wave device.

Patent Literature 1 discloses an acoustic wave device. The acoustic wave device can reduce the mounting area by narrowing the wiring interval.

JP 2016-208413 A

However, in the acoustic wave device described in Patent Document 1, even if the wiring interval is narrowed to the limit, a certain amount of mounting area is required. Therefore, the acoustic wave device cannot be miniaturized.

The present disclosure has been made to solve the above problems. An object of the present disclosure is to provide an acoustic wave device capable of reducing the mounting area, a module including the acoustic wave device, and a method of manufacturing the acoustic wave device.

The acoustic wave device according to the present disclosure is
a wiring board;
a first device chip mounted on the wiring substrate;
a second device chip mounted on the first device chip;
An acoustic wave device comprising:
The second device chip is an acoustic wave device electrically connected to the wiring board via a conductive member penetrating the first device chip.

An aspect of the present disclosure is that the second device chip is electrically connected to the wiring substrate via bumps between the wiring substrate and the first device chip.

An aspect of the present disclosure is that the first device chip is a reception filter and the second device chip is a transmission filter.

An aspect of the present disclosure is that the first device chip is formed thinner than the second device chip.

It is an aspect of the present invention that the first device chip has four bumps and the second device chip has four bumps.

It is an aspect of the present invention that the first device chip has five bumps, and the bump formed closest to the center of the first device chip is joined to the conductive member. be.

An acoustic wave functional element is formed on the main surface of the first device chip facing the wiring board, and the other main surface of the first device chip is electrically connected to the conductive member. It is an aspect of this disclosure that a connected metal layer is formed.

An elastic wave functional element is formed on the main surface of the second device chip facing the first device chip, and the second device chip is formed on the other main surface of the second device chip. It is an aspect of the present disclosure that a metal layer is formed that is electrically connected to the penetrating conductive member.

An aspect of the present disclosure is that at least one of the first device chip and the second device chip is formed with a surface acoustic wave filter.

An aspect of the present disclosure is that at least one of the first device chip and the second device chip is formed with a bandpass filter including an acoustic thin film resonator.

A module including the acoustic wave device is one aspect of the present disclosure.

A method for manufacturing an acoustic wave device according to the present disclosure includes:
a first mounting step of mounting a first device chip on a wiring board so as to be electrically connected to the wiring board;
After the first mounting step, a penetrating step of penetrating the conductive member through the first device chip so that the conductive member is electrically connected to the wiring substrate;
After the through step, a second mounting step of mounting a second device chip on the first device chip so as to be electrically connected to the conductive member;
After the second mounting step, a plurality of laminated bodies in which the wiring board, the first device chip, and the second device chip are laminated are collectively sealed by a sealing portion to form an assembly. a body formation process;
After the assembly forming step, a device forming step of forming a plurality of acoustic wave devices by cutting the assembly so that the wiring substrate, the first device chip, and the second device chip are cut out together. When,
A method for manufacturing an acoustic wave device including

A method for manufacturing an acoustic wave device according to the present disclosure includes:
a first fabrication step of fabricating first device chips on a first wafer;
a second fabrication step of fabricating second device chips on a second wafer;
a bonding step of bonding the first wafer and the second wafer after the first creating step and the second creating step;
After the bonding step, the first wafer and the second wafer are stacked such that the first device chip and the second device chip are cut out from the first wafer and the second wafer, respectively. A first cutting step of cutting the laminate together;
After the first cutting step, a mounting step of mounting the first device chip and the second device chip on a wiring substrate such that the first device chip is electrically connected to the wiring substrate;
After the mounting step, a penetrating step of penetrating a conductive member through the first device chip and the second device chip so that the conductive member is electrically connected to the wiring board;
After the piercing step, a plurality of laminates in which the wiring board, the first device chip, and the second device chip are laminated are collectively sealed by a sealing portion to form an assembly. process and
After the assembly forming step, a device forming step of forming a plurality of acoustic wave devices by cutting the assembly so that the wiring substrate, the first device chip, and the second device chip are cut out together. When,
A method for manufacturing an acoustic wave device including

ADVANTAGE OF THE INVENTION According to this indication, the acoustic wave device which can make a mounting area small, the module provided with the acoustic wave device, and the manufacturing method of the acoustic wave device can be provided.

1 is a longitudinal sectional view of an acoustic wave device according to Embodiment 1; FIG. 2 is a plan view of a first device chip of the acoustic wave device according to Embodiment 1; FIG. 4 is a plan view of a second device chip of the acoustic wave device according to Embodiment 1; FIG. FIG. 4 is a diagram showing an example of a first acoustic wave element of the acoustic wave device according to Embodiment 1; FIG. 4 is a diagram showing an example in which the first acoustic wave element of the acoustic wave device according to Embodiment 1 is an acoustic thin film resonator; FIG. 4 is a vertical cross-sectional view for explaining the method of manufacturing the acoustic wave device according to Embodiment 1; FIG. 10 is a vertical cross-sectional view of a module to which the acoustic wave device according to Embodiment 2 is applied; FIG. 11 is a vertical cross-sectional view for explaining a method of manufacturing an acoustic wave device according to Embodiment 3; FIG. 11 is a vertical cross-sectional view for explaining a method of manufacturing an acoustic wave device according to Embodiment 3;

Embodiments will be described with reference to the accompanying drawings. In addition, the same code|symbol is attached|subjected to the part which is the same or corresponds in each figure. Redundant description of the relevant part will be simplified or omitted as appropriate.

Embodiment 1.
FIG. 1 is a longitudinal sectional view of an acoustic wave device according to Embodiment 1. FIG.

FIG. 1 shows an example of an acoustic wave device that is a duplexer as an acoustic wave device 1 .

As shown in FIG. 1, the acoustic wave device 1 includes a wiring substrate 3, a plurality of first bumps 15a, a first device chip 5a, a plurality of conductive members 16, a plurality of second bumps 15b, and a second device chip 5b. and a sealing portion 17 .

For example, the wiring board 3 is a multilayer board made of resin. For example, the wiring board 3 is a Low Temperature Co-fired Ceramics (LTCC) multilayer board consisting of a plurality of dielectric layers.

A plurality of first bumps 15 a are formed on the upper surface of the wiring substrate 3 . For example, the first bumps 15a are gold bumps. For example, the height of the first bump 15a is 20 μm to 50 μm.

For example, the first device chip 5a is a substrate made of piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz. For example, the first device chip 5a is a substrate made of piezoelectric ceramics. For example, the first device chip 5a is a substrate in which a piezoelectric substrate and a support substrate are bonded together. For example, the support substrate is a substrate made of sapphire, silicon, alumina, spinel, quartz or glass.

The first device chip 5a is mounted on the wiring substrate 3 by flip-chip bonding via a plurality of first bumps 15a. The first device chip 5a is electrically connected to the wiring substrate 3 via a plurality of first bumps 15a.

The first device chip 5a is a substrate on which functional elements are formed. For example, a reception filter is formed on the main surface (lower surface in FIG. 1) of the first device chip 5a.

The receive filter is formed so that an electrical signal in a desired frequency band can pass. For example, the receive filter is a ladder-type filter consisting of a plurality of series resonators and a plurality of parallel resonators.

A plurality of conductive members 16 penetrate through the first device chip 5a. For example, a plurality of conductive members 16 are filled in a plurality of holes drilled by laser in the first device chip 5a. The plurality of conductive members 16 are electrically connected to the plurality of first bumps 15a, respectively.

A plurality of second bumps 15b are formed on the upper surface of the first device chip 5a. For example, the second bumps 15b are gold bumps. For example, the height of the second bump 15b is 20 μm to 50 μm. The plurality of second bumps 15b are electrically connected to the plurality of conductive members 16, respectively.

For example, the second device chip 5b is a substrate made of piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz. For example, the second device chip 5b is a substrate made of piezoelectric ceramics. For example, the second device chip 5b is a substrate in which a piezoelectric substrate and a support substrate are bonded together. For example, the support substrate is a substrate made of sapphire, silicon, alumina, spinel, quartz or glass.

The second device chip 5b is mounted on the first device chip 5a by flip-chip bonding via a plurality of second bumps 15b. The second device chip 5b is electrically connected to the wiring board 3 via the plurality of second bumps 15b, the plurality of conductive members 16, and the plurality of first bumps 15a.

The second device chip 5b is a substrate on which functional elements are formed. For example, a transmission filter is formed on the main surface (lower surface in FIG. 1) of the second device chip 5b.

The transmission filter is formed so that an electrical signal in a desired frequency band can pass. For example, the transmission filter is a ladder-type filter consisting of multiple series resonators and multiple parallel resonators.

The sealing portion 17 is formed to cover the first device chip 5a and the second device chip 5b. For example, the sealing portion 17 is made of an insulator such as synthetic resin. For example, the sealing portion 17 is made of metal. For example, the sealing portion 17 is formed of a resin layer and a metal layer.

When the sealing portion 17 is made of synthetic resin, the synthetic resin is epoxy resin, polyimide, or the like. Preferably, the encapsulant 17 is made of epoxy using a low temperature curing process.

Next, an example of the first device chip 5a and the second device chip 5b will be described with reference to FIGS. 2 and 3. FIG.
2 is a plan view of the first device chip of the acoustic wave device according to Embodiment 1. FIG. 3 is a plan view of the second device chip of the acoustic wave device according to Embodiment 1. FIG.

The right side of FIG. 2 shows the main surface of the first device chip 5a facing the wiring board 3. As shown in FIG. The left side of FIG. 2 shows another main surface of the first device chip 5a. The right side of FIG. 3 shows the main surface of the second device chip 5b facing the first device chip 5a. The left side of FIG. 3 shows another main surface of the second device chip 5b.

As shown on the right side of FIG. 2, the plurality of first acoustic wave elements 52 and the first wiring pattern 54 are formed on the main surface facing the wiring substrate 3 of the first device chip 5a.

On the right side of FIG. 2, the plurality of first acoustic wave elements 52 includes resonators "21", "22", "24", two "25", "26", "28", and two "29". include. The plurality of first acoustic wave elements 52 are provided so as to function as reception filters.

For example, the first wiring pattern 54 is made of an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium. For example, the first wiring pattern 54 is formed of a laminated metal film formed by laminating a plurality of metal layers. For example, the thickness of the first wiring pattern 54 is from 1500 nm to 4500 nm.

The first wiring pattern 54 includes two antenna bump pads ANT, a transmission bump pad Tx, a reception bump pad Rx, and two ground bump pads GND. The two ground bump pads GND are receiving ground bump pads. The first wiring pattern 54 is electrically connected to the first acoustic wave element 52 . The other two ground bump pads GND are not electrically connected to the first wiring pattern 54 . These ground bump pads GND are transmission ground bump pads.

These bump pads are provided corresponding to respective positions of the plurality of first bumps 15a. Although not shown, the plurality of conductive members 16 are provided corresponding to respective positions of a portion of the plurality of first bumps 15a.

On the left side of FIG. 2, two antenna bump pads ANT, a transmission bump pad Tx, a reception bump pad Rx and two ground bump pads GND are provided. The two ground bump pads GND are transmission ground bump pads.

Although not shown, these bump pads are provided corresponding to respective positions of the plurality of conductive members 16 .

As shown on the right side of FIG. 3, the plurality of second acoustic wave elements 55 and the second wiring pattern 57 are formed on the main surface of the second device chip 5b facing the first device chip 5a.

On the right side of FIG. 3, the plurality of second acoustic wave elements 55 includes resonators "1" to "20". The plurality of second acoustic wave elements 55 are provided so as to function as transmission filters.

For example, the second wiring pattern 57 is made of an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium. For example, the second wiring pattern 57 is formed of a laminated metal film formed by laminating a plurality of metal layers. For example, the thickness of the second wiring pattern 57 is from 1500 nm to 4500 nm.

The second wiring pattern 57 includes two antenna bump pads ANT, a transmission bump pad Tx, a reception bump pad Rx, and two ground bump pads GND. The two ground bump pads GND are transmission ground bump pads. The second wiring pattern 57 is electrically connected to the second acoustic wave element 55 .

Although not shown, these bump pads are provided corresponding to respective positions of the plurality of conductive members 16 . These bump pads are provided corresponding to respective positions of the plurality of second bumps 15b.

As shown on the left side of FIG. 3, nothing is formed on the other main surface of the second device chip 5b.

Next, an example of the first elastic wave element 52 will be described with reference to FIG.
FIG. 4 is a diagram showing an example of the first acoustic wave element of the acoustic wave device according to Embodiment 1. FIG.

As shown in FIG. 4, an IDT (Interdigital Transducer) 52a and a pair of reflectors 52b are formed on the main surface of the first device chip 5a. The IDT 52a and the pair of reflectors 52b are provided so as to excite surface acoustic waves.

For example, the IDT 52a and the pair of reflectors 52b are made of an alloy of aluminum and copper. For example, the IDT 52a and the pair of reflectors 52b are made of an appropriate metal such as titanium, palladium, silver, or an alloy thereof. For example, the IDT 52a and the pair of reflectors 52b are formed of a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the IDT 52a and the pair of reflectors 52b is 150 nm to 400 nm.

The IDT 52a includes a pair of comb electrodes 52c. A pair of comb electrodes 52c are opposed to each other. The comb-shaped electrode 52c includes a plurality of electrode fingers 52d and busbars 52e. The plurality of electrode fingers 52d are arranged with their longitudinal directions aligned. Bus bar 52e connects a plurality of electrode fingers 52d.

One of the pair of reflectors 52b is adjacent to one side of the IDT 52a. The other of the pair of reflectors 52b is adjacent to the other side of the IDT 52a.

Although not shown, the second elastic wave element 55 is also configured in the same manner as the first elastic wave element 52 .

Next, an example in which the first acoustic wave element 52 is an acoustic thin film resonator will be described with reference to FIG.
FIG. 5 is a diagram showing an example in which the first acoustic wave element of the acoustic wave device according to Embodiment 1 is an acoustic thin film resonator.

In FIG. 5, the chip substrate 60 functions as the first device chip 5a. For example, the chip substrate 60 is a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel or glass.

A piezoelectric film 62 is provided on the chip substrate 60 . For example, the piezoelectric film 62 is made of aluminum nitride, for example.

The lower electrode 64 and the upper electrode 66 are provided so as to sandwich the piezoelectric film 62 . For example, the lower electrode 64 and the upper electrode 66 are made of metal such as ruthenium.

A gap 68 is formed between the lower electrode 64 and the chip substrate 60 .

In the acoustic thin film resonator, the lower electrode 64 and the upper electrode 66 excite an elastic wave in the thickness longitudinal vibration mode inside the piezoelectric film 62 .

Although not shown, the second elastic wave element 55 is also configured in the same manner as the first elastic wave element 52 .

Next, a method for manufacturing the acoustic wave device 1 will be described with reference to FIG.
FIG. 6 is a longitudinal sectional view for explaining the method of manufacturing the acoustic wave device according to the first embodiment.

First, a first device chip 5a and a second device chip 5b are produced. After that, a first mounting process is performed. In the first mounting step, the first device chip 5a is mounted on the wiring board 3 so as to be electrically connected to the wiring board 3 . After that, a piercing process is performed. In the piercing step, the conductive member 16 is pierced through the first device chip 5a so that the conductive member 16 is electrically connected to the wiring board 3 .

After that, a second mounting process is performed. In the second mounting step, the second device chip 5b is mounted so as to be electrically connected to the conductive member 16 on the first device chip 5a. After that, an aggregate forming step is performed. In the assembly forming process, the assembly is formed by collectively sealing a plurality of laminates in which the wiring board 3, the first device chip 5a, and the second device chip 5b are laminated by the sealing portion 17. . After that, a device forming process is performed. In the device forming process, a plurality of acoustic wave devices 1 are formed by cutting the assembly so that the wiring board 3, the first device chip 5a, and the second device chip 5b are cut out together.

According to the first embodiment described above, the second device chip 5b is electrically connected to the wiring substrate 3 via the conductive member 16 penetrating through the first device chip 5a. Therefore, the mounting area of the acoustic wave device 1 can be reduced.

Also, the second device chip 5b is electrically connected to the wiring board 3 via the first bumps 15a between the wiring board 3 and the first device chip 5a. Therefore, the mounting area of the acoustic wave device 1 can be reduced more reliably.

The first device chip 5a is a reception filter, and the second device chip 5b is a transmission filter. Therefore, heat from the transmission filter can be dissipated through the sealing portion 17 .

Note that the first device chip 5a may be formed thinner than the second device chip 5b. In this case, the height of the acoustic wave device 1 can be reduced.

Also, the number of the first bumps 15a may be four, and the number of the second bumps 15b may be four. In this case, the mounting area of the acoustic wave device 1 can be reduced with a simple configuration.

Moreover, the number of the first bumps 15 a may be five, and the first bump 15 a formed at the position closest to the center of the first device chip 5 a may be joined to the conductive member 16 . In this case, the heat from the first device chip 5a can be more reliably dissipated.

An elastic wave functional element is formed on the main surface of the first device chip 5a facing the wiring substrate 3, and a conductive member 16 and an electric conductor are formed on the other main surface of the first device chip 5a. A conductive metal layer may be formed. In this case, the capacitive element and the inductive element can be formed without enlarging the acoustic wave device 1 .

An elastic wave functional element is formed on the main surface of the second device chip 5b facing the first device chip 5a, and the second device chip 5b is formed on the other main surface of the second device chip 5b. A metal layer may be formed that is electrically connected to the conductive member penetrating through 5b. In this case, the capacitive element and the inductive element can be formed without enlarging the acoustic wave device 1 .

Also, the transmission ground bump pads and the reception ground bump pads are not electrically connected. Therefore, the isolation characteristics of the acoustic wave device 1 can be improved.

At least one of the first device chip 5a and the second device chip 5b is formed with a surface acoustic wave filter. Therefore, the mounting area of the acoustic wave device 1 can be reduced with a simple configuration.

At least one of the first device chip 5a and the second device chip 5b is formed with a band-pass filter composed of an acoustic thin film resonator. Therefore, the mounting area of the acoustic wave device 1 can be reduced with a simple configuration.

Embodiment 2.
FIG. 7 is a longitudinal sectional view of a module to which the acoustic wave device according to Embodiment 2 is applied. The same reference numerals are given to the same or corresponding parts as those of the first embodiment. Description of this part is omitted.

In FIG. 7 , module 100 includes wiring board 130 , integrated circuit component IC, acoustic wave device 1 , inductor 11 and sealing portion 117 .

The wiring board 130 is equivalent to the wiring board 3 of the first embodiment.

Although not shown, the integrated circuit component IC is mounted inside the wiring board 130 . An integrated circuit component IC includes a switching circuit and a low noise amplifier.

Acoustic wave device 1 is mounted on the main surface of wiring board 130 .

Inductor 11 is mounted on the main surface of wiring board 130 . Inductor 11 is implemented for impedance matching. For example, inductor 111 is an Integrated Passive Device (IPD).

The sealing portion 117 seals a plurality of electronic components including the acoustic wave device 1 .

According to the second embodiment described above, module 100 includes acoustic wave device 1 . Therefore, it is possible to provide the module 100 with a small mounting area.

Embodiment 3.
8 and 9 are longitudinal sectional views for explaining the method of manufacturing the acoustic wave device according to the third embodiment. The same reference numerals are given to the same or corresponding parts as those of the first embodiment. Description of this part is omitted.

First, a first creation process and a second creation process are performed. In the first wafer forming process, a plurality of first device chips 5a are formed on the first wafer 70 in the first forming process. In the second production step, the second device chips 5b are produced on the second wafer 74. As shown in FIG.

A bonding process is performed. In the bonding step, the first wafer 70 and the second wafer 74 are bonded via a plurality of metal bodies 76 . After that, a plurality of first bumps 15a are formed on the first device 5a on the first wafer 70 . After that, a first cutting step is performed. In the first cutting step, the first wafer 70 and the second wafer 74 are stacked such that the first device chip 5a and the second device chip 5b are cut out from the first wafer 70 and the second wafer 74, respectively. The laminated body is cut together.

After that, a mounting process is performed. In the mounting process, the first device chip 5 a and the second device chip 5 b are mounted on the wiring board 3 so that the first device chip 5 a is electrically connected to the wiring board 3 . After that, a piercing process is performed. In the piercing step, a conductive member is pierced through the first device chip 5a and the second device chip 5b so that the conductive member 16 is electrically connected to the wiring board 3 .

After that, an aggregate forming step is performed. In the assembly forming process, the assembly is formed by collectively sealing a plurality of laminates in which the wiring board 3, the first device chip 5a, and the second device chip 5b are laminated by the sealing portion 17. . After that, a device forming process is performed. In the device forming process, a plurality of acoustic wave devices 1 are formed by cutting the assembly so that the wiring board 3, the first device chip 5a, and the second device chip 5b are cut out together.

In this manufacturing method, a plurality of metal bodies 76 are used instead of the plurality of second bumps 15b. The first device chip 5 a and the second device chip 5 b are eutectic connected to the metal body 76 .

According to the third embodiment described above, as in the first embodiment, the mounting area of the acoustic wave device 1 can be reduced.

Having described several aspects of at least one embodiment, it is to be appreciated various alterations, modifications, and improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of this disclosure.

It is to be understood that the method and apparatus embodiments described herein are not limited in application to the details of construction and arrangement of components set forth in the foregoing description or illustrated in the accompanying drawings. The methods and apparatus can be implemented in other embodiments and practiced or carried out in various ways.

Specific implementations are provided here for illustrative purposes only and are not intended to be limiting.

The phraseology and terminology used in this disclosure is for the purpose of description and should not be regarded as limiting. The use of "including", "comprising", "having", "including" and variations thereof herein is intended to be inclusive of the items listed below and equivalents thereof as well as additional items.

References to “or (or)” shall be construed such that any term stated using “or (or)” refers to one, more than one, and all of the terms of the statement. can be

All references to front, rear, left, right, top, bottom, top, bottom, width, length, and front and back are intended for convenience of description. Such references are not limited to any one positional or spatial orientation of the components of this disclosure. Accordingly, the above description and drawings are exemplary only.

Reference Signs List 1 acoustic wave device 3 wiring board 5a first device chip 5b second device chip 15a first bump 15b second bump 16 conductive member 17 sealing portion 52 first acoustic wave element 52a IDT , 52b reflector, 52c comb electrode, 52d electrode fingers, 54 first wiring pattern, 55 second acoustic wave element, 57 second wiring pattern, 60 chip substrate, 62 piezoelectric film, 64 lower electrode, 66 upper electrode, 68 gap , 70 first wafer, 74 second wafer, 76 metal body, 100 module, 105 device chip, 111 inductor, 117 sealing portion, 130 wiring board

Claims (13)

a wiring board;
a first device chip mounted on the wiring substrate;
a second device chip mounted on the first device chip;
An acoustic wave device comprising:
The acoustic wave device, wherein the second device chip is electrically connected to a wiring board via a conductive member penetrating the first device chip. 2. The acoustic wave device according to claim 1, wherein the second device chip is electrically connected to the wiring board through bumps between the wiring board and the first device chip. The acoustic wave device according to claim 1, wherein the first device chip is a receive filter and the second device chip is a transmit filter. The acoustic wave device according to claim 1, wherein the first device chip is thinner than the second device chip. The acoustic wave device according to claim 1, wherein the first device chip has four bumps and the second device chip has four bumps. 2. The acoustic wave device according to claim 1, wherein the first device chip has five bumps, and the bump formed closest to the center of the first device chip is joined to the conductive member. An acoustic wave functional element is formed on the main surface of the first device chip facing the wiring board, and the other main surface of the first device chip is electrically connected to the conductive member. 2. The acoustic wave device of claim 1, wherein a connected metal layer is formed. An elastic wave functional element is formed on the main surface of the second device chip facing the first device chip, and the second device chip is formed on the other main surface of the second device chip. 2. The acoustic wave device according to claim 1, wherein a metal layer electrically connected to the penetrating conductive member is formed. 2. The acoustic wave device according to claim 1, wherein at least one of said first device chip and said second device chip is formed with a surface acoustic wave filter. 2. The acoustic wave device according to claim 1, wherein at least one of said first device chip and said second device chip is formed with a bandpass filter comprising an acoustic thin film resonator. A module comprising the acoustic wave device according to any one of claims 1 to 10. a first mounting step of mounting a first device chip on a wiring board so as to be electrically connected to the wiring board;
After the first mounting step, a penetrating step of penetrating the conductive member through the first device chip so that the conductive member is electrically connected to the wiring substrate;
After the through step, a second mounting step of mounting a second device chip on the first device chip so as to be electrically connected to the conductive member;
After the second mounting step, a plurality of laminated bodies in which the wiring board, the first device chip, and the second device chip are laminated are collectively sealed by a sealing portion to form an assembly. a body formation process;
After the assembly forming step, a device forming step of forming a plurality of acoustic wave devices by cutting the assembly so that the wiring substrate, the first device chip, and the second device chip are cut out together. When,
A method of manufacturing an acoustic wave device comprising: a first fabrication step of fabricating first device chips on a first wafer;
a second fabrication step of fabricating second device chips on a second wafer;
a bonding step of bonding the first wafer and the second wafer after the first creating step and the second creating step;
After the bonding step, the first wafer and the second wafer are stacked such that the first device chip and the second device chip are cut out from the first wafer and the second wafer, respectively. A first cutting step of cutting the laminate together;
After the first cutting step, a mounting step of mounting the first device chip and the second device chip on a wiring substrate such that the first device chip is electrically connected to the wiring substrate;
After the mounting step, a penetrating step of penetrating a conductive member through the first device chip and the second device chip so that the conductive member is electrically connected to the wiring board;
After the piercing step, a plurality of laminates in which the wiring board, the first device chip, and the second device chip are laminated are collectively sealed by a sealing portion to form an assembly. process and
After the assembly forming step, a device forming step of forming a plurality of acoustic wave devices by cutting the assembly so that the wiring substrate, the first device chip, and the second device chip are cut out together. When,
A method of manufacturing an acoustic wave device comprising:

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