CN115250105A

CN115250105A - Elastic wave device, method for manufacturing same, and module including elastic wave device

Info

Publication number: CN115250105A
Application number: CN202111238103.8A
Authority: CN
Inventors: 桑原英司
Original assignee: Sanyan Japan Technology Co ltd
Current assignee: Sanyan Japan Technology Co ltd
Priority date: 2021-04-27
Filing date: 2021-10-25
Publication date: 2022-10-28
Also published as: JP2022169399A

Abstract

An elastic wave device, a method of manufacturing the same, and a module including the elastic wave device, the elastic wave device including: a wiring substrate, a first device chip mounted on the wiring substrate, and a second device chip mounted on the first device chip; the second device chip is electrically connected to the wiring substrate through a conductive member penetrating the first device chip. The module comprises an elastic wave device as described above. The method for manufacturing an elastic wave device includes a first mounting step, a penetrating step, a second mounting step, an aggregate forming step, and a device forming step. Thus, an elastic wave device capable of reducing the mounting area can be provided.

Description

Elastic wave device, method for manufacturing same, and module including elastic wave device

Technical Field

The present disclosure relates to an elastic wave device, a method of manufacturing the same, and a module including the elastic wave device.

Background

Patent document 1 (japanese patent laid-open No. 2016-208413) exemplifies an elastic wave device. The elastic wave device reduces the mounting area by reducing the pitch of the wiring.

However, the elastic wave device described in patent document 1 needs to have a certain mounting area even if the pitch of the wiring is reduced. Therefore, the elastic wave device cannot be miniaturized.

Disclosure of Invention

In view of the above problems, it is an object of the present disclosure to provide an acoustic wave device capable of reducing a mounting area, a method of manufacturing the same, and a module including the acoustic wave device.

[ means for solving the problems ]

An elastic wave device includes a wiring substrate, a first device chip mounted on the wiring substrate, and a second device chip mounted on the first device chip; the second device chip is electrically connected to the wiring substrate through a conductive member penetrating the first device chip.

In one aspect of the present disclosure, the second device chip is electrically connected to the wiring substrate through a bump between the wiring substrate and the first device chip.

In one aspect of the present disclosure, the first device chip is a reception filter, and the second device chip is a transmission filter.

In one aspect of the present disclosure, the first device chip is thinner than the second device chip.

In one aspect of the present disclosure, the number of the bumps between the wiring substrate and the first device chip is 4, and the number of the bumps between the second device chip and the first device chip is 4.

In one aspect of the present disclosure, the number of the bumps between the wiring board and the first device chip is 5, and the bump formed at the center position closest to the first device chip is bonded to the conductive member.

In one aspect of the present disclosure, an elastic wave function element is formed on a main surface of the first device chip facing the wiring board, and a metal layer electrically connected to the conductive element is formed on the other main surface of the first device chip.

In one aspect of the present disclosure, the conductive member further includes a portion penetrating the second device chip, an elastic wave function member is formed on a main surface of the second device chip opposite to the first device chip, and a metal layer electrically connected to the portion penetrating the conductive member of the second device chip is formed on the other main surface of the second device chip.

In one aspect of the present disclosure, at least one of the first device chip and the second device chip is provided with a surface acoustic wave filter.

In one aspect of the present disclosure, at least one of the first device chip and the second device chip is provided with a band pass filter including an acoustic thin film resonator.

In one aspect of the present disclosure, a module including the elastic wave device is provided.

The disclosed method for manufacturing an elastic wave device includes:

a first mounting step: mounting a first device chip electrically connected to the wiring substrate on the wiring substrate;

a through step: after the first mounting step, passing a conductive member through the 1 st device chip to electrically connect the conductive member to the wiring substrate;

a second mounting step: mounting a second device chip electrically connected to the conductive member on the first device chip after the penetrating step;

an aggregate forming step: after the second mounting step, sealing a multilayer structure in which the wiring substrate, the first device chip, and the second device chip are stacked by a sealing portion to form an aggregate; and

a device forming step: after the aggregate forming step, the wiring board, the first device chip, and the second device chip are cut together to cut the aggregate, thereby forming a plurality of elastic wave devices.

The disclosed method for manufacturing an elastic wave device includes:

the first manufacturing step: forming a first device chip on a first wafer;

a second manufacturing step: forming a second device chip on the second wafer;

a bonding step: bonding the first wafer to the second wafer after the first fabrication step and the second fabrication step;

a first cutting step: cutting the multilayer structure formed by stacking the first wafer and the second wafer together after the bonding step, so that the first device chips and the second device chips are respectively cut from the first wafer and the second wafer;

the installation step: after the first cutting step, mounting the first device chip and the second device chip on the wiring substrate so that the first device chip is electrically connected to the wiring substrate;

a through step: after the mounting step, passing the conductive member through the first device chip and the second device chip to electrically connect the conductive member to the wiring substrate;

an aggregate forming step: after the penetrating step, sealing a multilayer structure in which the wiring substrate, the first device chip, and the second device chip are stacked by a sealing portion to form an aggregate; and

The invention has the beneficial effects that: according to the present disclosure, it is possible to provide an elastic wave device having a reduced mounting area, a module including the elastic wave device, and a method of manufacturing the elastic wave device.

Drawings

Fig. 1 is a side sectional view of an elastic wave device of a first embodiment.

Fig. 2 is a plan view of a first device chip of the elastic wave device of the first embodiment.

Fig. 3 is a plan view of a second device chip of the elastic wave device of the first embodiment.

Fig. 4 is a schematic view of a first elastic wave assembly of the elastic wave device of the first embodiment.

Fig. 5 is a schematic view of the first elastic wave device of the first embodiment in which the first elastic wave element is an acoustic thin film resonator.

Fig. 6 is a side cross-sectional view illustrating a method of manufacturing an elastic wave device according to the first embodiment.

Fig. 7 is a side sectional view of a module in which the elastic wave device is provided in the second embodiment.

Fig. 8 is a side cross-sectional view illustrating a method of manufacturing an elastic wave device according to a third embodiment.

Fig. 9 is a side cross-sectional view illustrating a method of manufacturing an elastic wave device according to a third embodiment.

Detailed Description

Embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that like or similar parts are designated with the same reference numerals throughout the figures. The similar or identical portions will simplify or omit the duplicated description.

(first embodiment)

Fig. 1 is a side sectional view of elastic wave device 1 of the first embodiment.

Fig. 1 illustrates an elastic wave device 1 as a duplexer.

As shown in fig. 1, elastic wave device 1 includes wiring board 3, a plurality of first bumps 15a, a first device chip 5a, a plurality of conductive members 16, a plurality of second bumps 15b, a second device chip 5b, and a sealing portion 17.

The wiring substrate 3 is, for example, a multilayer substrate made of resin. The wiring substrate 3 is, for example, a Low Temperature Co-fired Ceramic (LTCC) multilayer substrate made of a plurality of dielectric layers.

The first bump 15a is formed on the wiring substrate 3. The first bump 15a is, for example, a gold bump. For example, the height of the first bump 15a is 20 μm to 50 μm.

The first device chip 5a is, for example, a substrate made of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz. The first device chip 5a is a substrate made of piezoelectric ceramics, for example. The first device chip 5a is a substrate formed by bonding a piezoelectric substrate and a support substrate, for example. The support substrate is, for example, a substrate made of sapphire, silicon, alumina, spinel, crystal, or glass.

The first device chip 5a is mounted on the wiring substrate 3 by flip-chip bonding technology through the first bumps 15a. The first device chip 5a is electrically connected to the wiring substrate 3 through the first bump 15a.

The first device chip 5a serves as a substrate on which an elastic wave function component is provided. For example, the main surface 5a1 (the lower surface of the first device chip 5a in fig. 1) is provided with a reception filter.

The receiving filter can pass an electric signal of a desired frequency band. For example, the reception filter is a ladder filter including a plurality of series resonators and a plurality of parallel resonators.

The conductive member 16 penetrates the first device chip 5a. For example, the conductive members 16 are filled in a plurality of holes of the first device chip 5a opened by laser, respectively. The conductive elements 16 are electrically connected to the first bumps 15a, respectively.

The second bump 15b is formed on the other surface 5a2 (the upper surface of the first device chip 5a in fig. 1) of the first device chip 5a, which is opposite to the main surface 5a1. For example, the second bump 15b is a gold bump. For example, the height of the second bump 15b is 20 μm to 50 μm. The second bumps 15b are electrically connected to the conductive elements 16, respectively.

The second device chip 5b is a substrate made of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz, for example. The second device chip 5b is a substrate made of piezoelectric ceramics, for example. The second device chip 5b is a substrate formed by bonding a piezoelectric substrate and a support substrate, for example. The support substrate is, for example, a substrate made of sapphire, silicon, alumina, spinel, crystal, or glass.

The second device chip 5b is mounted on the first device chip 5a by flip-chip bonding technology through the second bumps 15b. The second device chip 5b is electrically connected to the wiring substrate 3 through the second bump 15b, the conductive member 16, and the first bump 15a.

The second device chip 5b serves as a substrate on which an elastic wave function component is provided. For example, the main surface 5b1 of the second device chip 5b (the lower surface of the second device chip 5b in fig. 1) is provided with a transmission filter.

The transmission filter allows an electric signal of a desired frequency band to pass therethrough. For example, the transmission filter is a ladder filter including a plurality of series resonators and a plurality of parallel resonators.

The sealing portion 17 is formed so as to cover the first device chip 5a and the second device chip 5b. The sealing portion 17 is made of an insulator such as a synthetic resin, for example. The seal 17 is made of metal, for example. The sealing portion 17 is made of, for example, a resin layer and a metal layer.

In the case where the sealing portion 17 is made of synthetic resin, the synthetic resin is epoxy resin, polyimide, or the like. Preferably, the sealing portion 17 may be formed of epoxy resin, and the epoxy resin is formed by a low temperature hardening process.

Next, the first device chip 5a and the second device chip 5b are described with reference to fig. 2 and 3.

Fig. 2 is a plan view of first device chip 5a of elastic wave device 1 according to the first embodiment. Fig. 3 is a plan view of second device chip 5b of elastic wave device 1 according to the first embodiment.

The right side of fig. 2 shows a main surface 5a1 of the first device chip 5a opposed to the wiring substrate 3. The other main surface 5a2 of the first device chip 5a is shown on the left side of fig. 2. The right side of fig. 3 shows the main surface 5b1 of the second device chip 5b opposite to the first device chip 5a. The other main surface 5b2 of the second device chip 5b is shown on the left side of fig. 3.

As shown on the right side of fig. 2, a plurality of first elastic wave devices 52 and first wiring patterns 54 are formed on the main surface 5a1 of the first device chip 5a that faces the wiring substrate 3.

In the right side of fig. 2, the first elastic wave assembly 52 includes a resonator 21, a resonator 22, a resonator 24, two resonators 25, a resonator 26, a resonator 28, and two resonators 29. The first elastic wave component 52 is provided to obtain a function of a reception filter.

The first wiring pattern 54 is formed of, for example, an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, the first wiring pattern 54 is a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the first wiring pattern 54 is 1500nm to 4500nm.

The first wiring pattern 54 includes two antenna bump pads Ant (shown as (3), (7) in the right side of fig. 2), a transmission bump pad Tx (shown as (2) in the right side of fig. 2), a reception bump pad Rx (shown as (6) in the right side of fig. 2), and three ground bump pads GND (shown as (5), two (4) in the right side of fig. 2). The three ground bump pads GND serve as ground bump pads for reception. The first wiring pattern 54 is electrically connected to the first acoustic wave device 52. Two other ground bump pads GND (shown as two (1) in the right side of fig. 2) are formed on the main surface 5a1 of the first device chip 5a without being electrically connected to the first wiring pattern 54. The other two ground bump pads GND (shown as two (1) in the right side of fig. 2) serve as ground bump pads for transmission.

These bump pads are respectively disposed at positions corresponding to the first bumps 15a. Although not shown, the conductive members 16 are respectively disposed at positions corresponding to a portion of the first bumps 15a.

In the left side of fig. 2, there are provided two antenna bump pads Ant (as shown in (3), (7) in the left side of fig. 2), a transmission bump pad Tx (as shown in (2) in the left side of fig. 2), a reception bump pad Rx (as shown in (6) in the left side of fig. 2), and two ground bump pads GND (as shown in (1), (4) in the left side of fig. 2). The ground bump pads GND (shown as (1) and (4) on the left side of fig. 2) serve as ground bump pads for transmission.

Although not shown in the drawings, the bump pads in the left side of fig. 2 are disposed at positions corresponding to the conductive members 16, respectively.

As shown on the right side of fig. 3, a plurality of second elastic wave components 55 and second wiring patterns 57 are provided on the main surface 5b1 of the second device chip 5b that faces the first device chip 5a.

In the right side of fig. 3, the second elastic wave assembly 55 includes resonators 1 to 20. The second elastic wave module 55 is provided to obtain a function of a transmission filter.

The second wiring pattern 57 is formed of, for example, an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, the second wiring pattern 57 is a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the second wiring pattern 57 is 1500nm to 4500nm.

The second wiring pattern 57 includes two antenna bump pads Ant (shown as (1), (3) in the right side of fig. 3), a transmission bump pad Tx (shown as (2) in the right side of fig. 3), a reception bump pad Rx (shown as (6) in the right side of fig. 3), and two ground bump pads GND (shown as (1), (4) in the right side of fig. 3). The ground bump pads GND (shown as (1) and (4) on the right side of fig. 3) serve as ground bump pads for transmission. The second wiring pattern 57 is electrically connected to the second acoustic wave device 55.

Although not shown in the drawings, the bump pads of the second wiring patterns 57 are respectively disposed at positions corresponding to the conductive members 16. The bump pads of the second wiring patterns 57 are respectively disposed at positions corresponding to the second bumps 15b.

As shown on the left side of fig. 3, the other main face 5b2 of the second device chip 5b is not provided with any component.

Next, an example of the first elastic wave element 52 will be described with reference to fig. 4. Fig. 4 is a schematic view of first elastic wave assembly 52 of elastic wave device 1 according to the first embodiment.

As shown in fig. 4, an IDT (inter driver) 52a and a pair of reflectors 52b are formed on the main surface 5a1 of the first device chip 5a. The IDT 52a and the reflectors 52b are used to excite a surface acoustic wave.

For example, the IDT 52a and the reflectors 52b are made of an alloy of aluminum and copper. For example, the IDT 52a and the reflectors 52b are made of a suitable metal such as titanium, palladium, silver, or an alloy thereof. For example, the IDT 52a and the reflectors 52b are laminated metal films in which a plurality of metal layers are laminated, for example. For example, the IDT 52a and the reflectors 52b have a thickness of 150nm to 400nm.

The IDT 52a has a pair of comb electrodes 52c. The comb electrodes 52c are opposed to each other. The comb electrodes 52c each have a plurality of electrode fingers 52d and bus bars 52e. The electrode fingers 52d extend in the longitudinal direction. The bus bar 52e connects the electrode fingers 52d.

One of the reflectors 52b is adjacent to one of the sides of the IDT 52 a. The other of the reflectors 52b is adjacent to the other side of the IDT 52 a.

Although not shown in the drawings, the second elastic wave device 55 has the same structure as the first elastic wave device 52.

Next, an example in which the first elastic wave device 52 is an acoustic thin film resonator will be described with reference to fig. 5. Fig. 5 is a schematic diagram of acoustic film resonator as first elastic wave device 1 of the first embodiment in which first elastic wave element 52 is an acoustic film resonator.

In fig. 5, the chip substrate 60 has the function of the first device chip 5a. For example, the chip substrate 60 is a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass.

A piezoelectric film 62 is disposed on the chip substrate 60. The piezoelectric film 62 is made of, for example, aluminum nitride.

The lower electrode 64 and the upper electrode 66 sandwich the piezoelectric film 62 therebetween. For example, the lower electrode 64 and the upper electrode 66 are made of metal such as ruthenium.

A gap 68 is formed between the lower electrode 64 and the chip substrate 60.

In the acoustic thin film resonator, the lower electrode 64 and the upper electrode 66 excite an elastic wave in a thickness longitudinal vibration mode in the piezoelectric film 62.

Next, a method for manufacturing the acoustic wave device 1 will be described with reference to fig. 6.

Fig. 6 is a side cross-sectional view illustrating a method of manufacturing elastic wave device 1 according to the first embodiment.

First, the first device chip 5a and the second device chip 5b are manufactured. Next, a first mounting step is performed. In the first mounting step, the first device chip 5a electrically connected to the wiring substrate 3 is mounted on the wiring substrate 3. After that, a penetration step is performed. In the penetrating step, the conductive member 16 is penetrated through the first device chip 5a, and the conductive member 16 is electrically connected to the wiring substrate 3.

Next, a second mounting step is performed. In the second mounting step, a second device chip 5b electrically connected to the conductive member 16 is mounted on the first device chip 5a. Thereafter, an aggregate forming step is performed. In the aggregate forming step, a multilayer structure in which the wiring substrate 3, the first device chip 5a, and the second device chip 5b are stacked is sealed by a sealing portion 17 to form an aggregate. Next, a device formation step is performed. In the device forming step, the wiring substrate 3, the first device chip 5a, and the second device chip 5b are cut together to cut the aggregate, thereby forming a plurality of elastic wave devices 1.

According to the first embodiment described above, the second device chip 5b is electrically connected to the wiring substrate 3 through the conductive member 16 penetrating the first device chip 5a. Therefore, the elastic wave device 1 having a small mounting area can be provided.

The second device chip 5b is electrically connected to the wiring substrate 3 through a first bump 15a provided between the wiring substrate 3 and the first device chip 5a. Therefore, the mounting area of elastic wave device 1 can be further reduced reliably.

Furthermore, the first device chip 5a is a receiving filter, and the second device chip 5b is a transmitting filter. Therefore, heat generated by the transmission filter can be dissipated through the sealing part 17.

Note that the first device chip 5a may be thinner than the second device chip 5b. In this case, the height of elastic wave device 1 can be reduced.

The number of the first bumps 15a may be 4, and the number of the second bumps 15b may be 4. In this case, the installation area of elastic wave device 1 can be reduced by a simple configuration.

Further, the number of the first bumps 15a may be 5, and the first bump 15a formed at the center position closest to the first device chip 5a may be bonded to the conductive member 16. In this case, the heat generated by the first device chip 5a can be dissipated.

The elastic wave functional element may be formed on a main surface 5a1 of the first device chip 5a facing the wiring board 3, and a metal layer electrically connected to the conductive element 16 may be formed on the other main surface 5a2 of the first device chip 5a. In this case, the elastic wave device 1 can be formed into a capacitor element and an inductor element without increasing its size.

Further, the conductive member 16 may include a portion that can penetrate the second device chip 5b. The elastic wave function element may be formed on a main surface 5b1 of the second device chip 5b facing the first device chip 5a, and a metal layer electrically connected to a portion of the conductive element 16 penetrating the second device chip 5b may be formed on the other main surface 5b2 of the second device chip 5b. In this case, the elastic wave device 1 can be formed into a capacitor element and an inductor element without increasing its size.

And, the transmitting ground bump pad and the receiving ground bump pad are not electrically connected. Therefore, the isolation characteristic of elastic wave device 1 can be improved.

Further, at least one of the first device chip 5a and the second device chip 5b is provided with a surface acoustic wave filter. Therefore, the installation area of elastic wave device 1 can be reduced by a simple configuration.

At least one of the first device chip 5a and the second device chip 5b is provided with a band pass filter formed of an acoustic thin film resonator. Therefore, the installation area of elastic wave device 1 can be reduced by a simple configuration.

(second embodiment)

Fig. 7 is a side cross-sectional view of a module in which the elastic wave device is provided according to the second embodiment. Note that portions similar or identical to those of the first embodiment are given the same reference numerals. The description of the similar or identical parts will be omitted.

In fig. 7, module 100 includes wiring board 130, integrated circuit module IC, acoustic wave device 1, inductor 111, and sealing portion 117.

The wiring substrate 130 is the same as the wiring substrate 3 in the first embodiment.

Although not shown in the drawings, the integrated circuit assembly IC is mounted inside the wiring substrate 130. The integrated circuit assembly IC comprises a switching circuit and a low noise amplifier.

The acoustic wave device 1 is mounted on a main surface of the wiring board 130.

The inductor 111 is mounted on a main surface of the wiring substrate 130. The inductor 111 is mounted for impedance matching. For example, the inductor 111 is an Integrated Passive Device (IPD).

The sealing portion 117 seals a plurality of electronic components including the elastic wave device 1.

According to the second embodiment described above, the module 100 includes the elastic wave device 1. Therefore, the module 100 having a reduced mounting area can be provided.

(third embodiment)

Fig. 8 and 9 are side cross-sectional views for explaining a method of manufacturing an elastic wave device according to a third embodiment. Note that portions similar or identical to those of the first embodiment are given the same reference numerals. The description of the similar or identical parts will be omitted.

First, a first manufacturing step and a second manufacturing step are performed. In the first fabrication step, a plurality of first device chips 5a are formed on the first wafer 70. In the second fabrication step, a plurality of second device chips 5b are formed on the second wafer 74.

A bonding step is performed. In the bonding step, the first wafer 70 and the second wafer 74 are bonded by a plurality of metal bodies 76. Thereafter, a plurality of first bumps 15a are formed on the first device chips 5a in the first wafer 70. Then, a first cutting step is performed. In the first cutting step, the multilayer structure on the first wafer 70 and the second wafer 74 are cut together, so that the first device chip 5a and the second device chip 5b are cut from the first wafer 70 and the second wafer 74, respectively.

After that, a mounting step is performed. In the mounting step, the first device chip 5a and the second device chip 5b are mounted on the wiring substrate 3, and the first device chip 5a is electrically connected to the wiring substrate 3. Subsequently, a penetration step is performed. In the penetrating step, the conductive member 16 is penetrated through the first device chip 5a and the second device chip 5b, and the conductive member 16 is electrically connected to the wiring substrate 3.

Thereafter, an aggregate forming step is performed. In the aggregate forming step, the multilayer structure in which the wiring substrate 3, the first device chip 5a, and the second device chip 5b are stacked is sealed by a sealing portion 17 to form an aggregate. Next, a device formation step is performed. In the device forming step, the wiring substrate 3, the first device chip 5a, and the second device chip 5b are cut together to cut the aggregate, thereby forming a plurality of elastic wave devices 1.

In the above manufacturing method, the second bump 15b is replaced with the metal body 76. The first device chip 5a and the second device chip 5b can be eutectic-connected to the metal body 76.

According to the third embodiment, the mounting area of elastic wave device 1 can be reduced as in the first embodiment.

While at least one embodiment has been described above, it is to be understood that various changes, modifications or improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the invention.

It is to be understood that the aspects of the method or apparatus described herein are not limited in their application to the details of construction and the arrangements of the components set forth in the above description or illustrated in the drawings. The methods and apparatus may be practiced in other embodiments or with other embodiments.

The examples are given by way of illustration only and not by way of limitation.

The description or words used herein are words of description rather than limitation. The use of "including," "comprising," "having," "containing," and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.

The use of "or any use of the term" or "to describe a term can be interpreted to mean one, more than one, or all of the described terms.

Front, back, left, right, top, bottom, up, down, and horizontal and vertical references are for convenience of description, and do not limit the position and spatial configuration of any of the components of the present invention. Accordingly, the foregoing description and drawings are by way of example only.

Claims

1. An elastic wave device, comprising:

a wiring substrate, a first device chip mounted on the wiring substrate, and a second device chip mounted on the first device chip; the second device chip is electrically connected to the wiring substrate through a conductive member penetrating the first device chip.

2. The elastic wave device according to claim 1, wherein: the second device chip is electrically connected to the wiring substrate through a bump between the wiring substrate and the first device chip.

3. The elastic wave device according to claim 1, wherein: the first device chip is a receiving filter, and the second device chip is a transmitting filter.

4. The elastic wave device according to claim 1, wherein: the first device chip is thinner than the second device chip.

5. The elastic wave device according to claim 1, wherein: the number of the bumps between the wiring substrate and the first device chip is 4, and the number of the bumps between the second device chip and the first device chip is 4.

6. The elastic wave device according to claim 1, wherein: the number of bumps between the wiring board and the first device chip is 5, and the bump formed at the center position closest to the first device chip is bonded to the conductive member.

7. The elastic wave device according to claim 1, wherein: an elastic wave function element is formed on a main surface of the first device chip opposite to the wiring substrate, and a metal layer electrically connected to the conductive element is formed on the other main surface of the first device chip.

8. The elastic wave device according to claim 1, wherein: the conductive member further includes a portion penetrating the second device chip, an elastic wave function member is formed on a main surface of the second device chip opposite to the first device chip, and a metal layer electrically connected to the portion penetrating the conductive member of the second device chip is formed on the other main surface of the second device chip.

9. The elastic wave device according to claim 1, wherein: at least one of the first device chip and the second device chip is provided with a surface acoustic wave filter.

10. The elastic wave device according to claim 1, wherein: at least one of the first device chip and the second device chip is provided with a band-pass filter constituted by an acoustic thin film resonator.

11. A module comprising the elastic wave device according to any one of claims 1 to 10.

12. A method for manufacturing an elastic wave device, comprising:

a through step: after the first mounting step, passing a conductive member through the first device chip to electrically connect the conductive member to the wiring substrate;

13. A method of manufacturing an elastic wave device, comprising:

the first manufacturing step: forming a first device chip on a first wafer;

a second manufacturing step: forming a second device chip on the second wafer;

a first cutting step: cutting the multilayer structure formed by stacking the first wafer and the second wafer together after the bonding step, so that the first device chip and the second device chip are respectively cut from the first wafer and the second wafer;

the installation step: after the first cutting step, mounting the first device chip and the second device chip on the wiring substrate to electrically connect the first device chip to the wiring substrate;

a through step: after the mounting step, passing a conductive member through the first device chip and the second device chip to electrically connect the conductive member to the wiring substrate;