CN115225053A - Elastic wave device and module including the same - Google Patents
Elastic wave device and module including the same Download PDFInfo
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- CN115225053A CN115225053A CN202111280495.4A CN202111280495A CN115225053A CN 115225053 A CN115225053 A CN 115225053A CN 202111280495 A CN202111280495 A CN 202111280495A CN 115225053 A CN115225053 A CN 115225053A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
An elastic wave device includes a substrate, a series resonator formed on a first main surface of the substrate, a wiring formed on the first main surface of the substrate and electrically connected to the series resonator, a heat sink formed on a second main surface of the substrate, a through hole penetrating the substrate and joined to the heat sink, and a heat conductive layer formed on the first main surface of the substrate and joined to the wiring and the through hole. Therefore, the elastic wave device capable of improving the heat dissipation performance and the module comprising the elastic wave device are provided.
Description
Technical Field
The present disclosure relates to an elastic wave device and a module including the same.
Background
Japanese patent document 1 (japanese patent laid-open No. 2017-157922) exemplifies an elastic wave device. The elastic wave device dissipates heat through heat dissipation paths such as through holes.
However, the heat capacity of the heat dissipation path of the elastic wave device described in patent document 1 is not sufficient. Therefore, there is not sufficient heat dissipation.
Disclosure of Invention
The present disclosure is directed to solving the above problems, and an object of the present disclosure is to provide an acoustic wave device capable of improving heat dissipation, and a module including the acoustic wave device.
[ means for solving the problems ]
An elastic wave device according to the present disclosure includes a substrate, a series resonator formed on a first main surface of the substrate, a wiring formed on the first main surface of the substrate and electrically connected to the series resonator, a heat sink formed on a second main surface of the substrate, a through hole penetrating the substrate and joined to the heat sink, and a heat conductive layer formed on the first main surface of the substrate and joined to the wiring and the through hole.
In one aspect of the present disclosure, the heat conductive layer is formed of a metal.
In one aspect of the present disclosure, the thermally conductive layer is a multi-layer metal film.
In one aspect of the present disclosure, the heat conductive layer is covered with an insulating film.
In one aspect of the present invention, the heat sink has a concave-convex shape.
In one aspect of the present invention, the elastic wave device further includes a plurality of bump pads formed on the first main surface of the substrate, and the heat conductive layer includes one of the bump pads.
In one aspect of the present disclosure, the heat sink and the heat conducting layer are not grounded.
In one aspect of the present disclosure, the elastic wave device further includes a metal layer formed on the second main surface of the substrate, and the metal layer is not connected to the heat sink.
In one aspect of the present disclosure, the substrate is a substrate formed of lithium tantalate, lithium niobate, crystal, or piezoelectric ceramic.
In one aspect of the present disclosure, the second main surface of the substrate is bonded to a substrate made of sapphire, silicon, alumina, spinel, crystal, or glass.
In one aspect of the present disclosure, the elastic wave device further includes a ladder filter having a plurality of parallel resonators.
In one aspect of the present disclosure, a module including the elastic wave device is provided.
The invention has the beneficial effects that: according to the present disclosure, an acoustic wave device capable of improving heat dissipation and a module including the acoustic wave device can be provided.
Drawings
Fig. 1 is a schematic view of an elastic wave device of a first embodiment.
Fig. 2 is an oblique view of the elastic wave device of the first embodiment.
Fig. 3 is a plan view of the elastic wave device of the first embodiment.
Fig. 4 is a plan view of the elastic wave device of the first embodiment.
Fig. 5 is a schematic view of an elastic wave module of the elastic wave device of the first embodiment.
Fig. 6 is a schematic view of the elastic wave assembly of the elastic wave device of the first embodiment being an acoustic thin film resonator.
Fig. 7 is a schematic view of an elastic wave device of a second embodiment.
Fig. 8 is an oblique view of an elastic wave device of the second embodiment.
Fig. 9 is a plan view of an elastic wave device according to a second embodiment.
Fig. 10 is a plan view of an elastic wave device according to a second embodiment.
Fig. 11 is a schematic diagram of a module to which the elastic wave device is applied according to a third embodiment.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that like or similar parts are designated with identical reference numerals throughout the several views. The similar or identical portions will simplify or omit the duplicated description.
(first embodiment)
Fig. 1 is a schematic view of an elastic wave device of a first embodiment. Fig. 2 is an oblique view of the elastic wave device of the first embodiment.
Fig. 1 and 2 are diagrams illustrating an elastic wave device 1 as a duplexer.
As shown in fig. 1, elastic wave device 1 includes wiring substrate 3, device chip 5, bumps 15, heat sink 6, through hole 7, heat conduction member 16, and sealing portion 17.
The wiring substrate 3 is, for example, a multilayer substrate made of resin. The wiring substrate 3 is, for example, a Low Temperature Co-fired ceramic (LTCC) multilayer substrate formed of a plurality of dielectric layers.
The device chip 5 is a substrate formed of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz, for example. The device chip 5 is a substrate formed of piezoelectric ceramics, for example. For example, the device chip 5 is a substrate in which a piezoelectric substrate and a support substrate are bonded. For example, the support substrate is a substrate formed of sapphire, silicon, alumina, spinel, crystal, or glass.
The device chip 5 is a substrate forming a functional component. For example, a reception filter and a transmission filter are formed on the first main surface 5a of the device chip 5 (the lower surface of the device chip 5 in fig. 1).
The receiving filter is capable of passing an electrical signal in a desired frequency band. For example, the reception filter is provided with a ladder filter formed of a plurality of series resonators and a plurality of parallel resonators.
The transmission filter passes an electric signal of a desired frequency band. For example, the transmission filter is provided with a ladder filter formed of a plurality of series resonators and a plurality of parallel resonators.
A plurality of bumps 15 (e.g., bump pads) are formed on the first main surface 5a of the device chip 5. For example, the bumps 15 are gold bumps. For example, the height of the bump 15 is 20 μm to 50 μm. The bumps 15 are electrically connected to the wiring of the first main surface 5a of the device chip 5. The bump 15 is electrically connected to the wiring substrate 3.
The heat sink 6 is formed on the second main surface 5b of the device chip 5 (the upper surface of the device chip 5 in fig. 1). As shown in fig. 2, the heat sink 6 has a concave-convex shape.
The through hole 7 penetrates the device chip 5. The through hole 7 is engaged with the heat sink 6.
For example, the heat conductive member 16 is formed of metal. For example, the thermally conductive member 16 is a multi-layer metal film. For example, the heat conduction member 16 is covered with an insulating film. The heat conductive member 16 penetrates the device chip 5 through the through hole 7. The heat conduction member 16 is a part of a heat conductive layer formed on the first main surface 5a of the device chip 5, and is bonded to the wiring on the first main surface 5a of the device chip 5 and the heat sink 6. The thermally conductive assembly 16 is bonded to one of the bumps 15.
The sealing portion 17 covers the device chip 5. The sealing portion 17 is formed of an insulator such as a synthetic resin, for example. The seal portion 17 is formed of metal, for example. For example, the sealing portion 17 is formed of a resin layer and a metal layer.
In the case where the sealing portion 17 is formed of a synthetic resin, an epoxy resin, a polyimide, or the like may be used as the synthetic resin. Preferably, the sealing portion 17 is made of epoxy resin, and the epoxy resin is formed through a low temperature curing process.
Next, the structure of device chip 5 of elastic wave device 1 will be described with reference to fig. 3 and 4.
Fig. 3 and 4 are plan views of elastic wave device 1 according to the first embodiment.
As shown in fig. 3 or 4, a plurality of elastic wave devices 52 are electrically connected to the wiring pattern 54 and formed on the first main surface 5a of the device chip 5.
The elastic wave device 52 includes a plurality of series resonators S1, S2, S3, S4, S5 and a plurality of parallel resonators P1, P2, P3, P4.
The series resonators S1, S2, S3, S4, S5 and the parallel resonators P1, P2, P3, P4 are formed in such a manner as to obtain the function of a transmission filter. The other series resonators and the other parallel resonators are formed in such a manner as to obtain the function of the reception filter.
The wiring pattern 54 may be formed of an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, the wiring pattern 54 has a multilayer metal structure in which a plurality of metal layers are stacked. For example, the wiring pattern 54 has a thickness of 1500nm to 4500nm.
The wiring pattern 54 includes an antenna pad ANT, a transmission pad Tx, a reception pad Rx, four ground pads GND, and a heat dissipation pad HR. The wiring pattern 54 is electrically connected to the elastic wave element 52.
In the present disclosure, the heat dissipation pad HR is not grounded. The heat radiation pad HR is provided at a position corresponding to the heat sink 6. Although not shown in the drawings, the heat dissipation pad HR is joined to the heat sink 6 through one of the bumps 15 and the thermal conduction member 16.
Next, an example of the elastic wave element 52 will be described with reference to fig. 5.
Fig. 5 is a schematic view of elastic wave assembly 52 of elastic wave device 1 according to the first embodiment.
As shown in fig. 5, an IDT (inter driver) 52a and a pair of reflectors 52b are formed on the first main surface of the device chip 5. The IDT52a and the reflectors 52b are provided so as to excite a surface acoustic wave.
For example, the IDT52a and the reflectors 52b are formed of an alloy of aluminum and copper. For example, the IDT52a and the reflectors 52b are formed of a suitable metal such as titanium, palladium, or silver, or an alloy thereof. For example, the IDT52a and the reflectors 52b may have a multilayer metal structure in which a plurality of metal layers are laminated. For example, the thickness of the IDT52a and the reflectors 52b is 150nm to 400nm.
The IDT52a has a pair of comb electrodes 52c. The comb electrodes 52c are opposed to each other. The comb electrodes 52c each have a plurality of electrode fingers 52d and bus bars 52e. The electrode fingers 52d extend in the longitudinal direction. The bus bar 52e connects the electrode fingers 52d.
One of the reflectors 52b is adjacent to one of the sides of the IDT52 a. The other of the reflectors 52b is adjacent to the other side of the IDT52 a.
Next, an example in which the acoustic wave device 52 is an acoustic thin film resonator will be described with reference to fig. 6. Fig. 6 is a schematic diagram of acoustic wave device 1 according to the first embodiment in which elastic wave module 52 is an acoustic thin film resonator.
In fig. 6, the chip substrate 60 has the function of the device chip 5. The chip substrate 60 is, for example, a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass.
A piezoelectric film 62 is disposed on the chip substrate 60. The piezoelectric film 62 is made of, for example, aluminum nitride.
The piezoelectric film 62 is sandwiched by a lower electrode 64 and an upper electrode 66. For example, the lower electrode 64 and the upper electrode 66 are made of metal such as ruthenium.
A gap 68 is formed between the lower electrode 64 and the chip substrate 60.
In the acoustic thin film resonator, the lower electrode 64 and the upper electrode 66 excite an elastic wave in a thickness longitudinal vibration mode in the piezoelectric film 62.
According to the first embodiment, the heat conduction member 16 is joined to the heat sink 6 through the wiring on the first main surface 5a of the device chip 5 and the through hole 7 as a part of the heat conduction layer. Therefore, the heat dissipation performance of acoustic wave device 1 can be improved. Therefore, the electric resistance of the elastic wave device 1 can be improved.
Also, the heat conduction member 16 is formed of metal. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
Further, the heat conduction member 16 is a multi-layer metal film. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
Also, the heat conduction member 16 is covered with an insulating film. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
The heat sink 6 has a concave-convex shape. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
And the thermally conductive layer comprises one of the bumps 15, e.g. a bump pad. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
Furthermore, the heat sink 6, the through hole 7, and the heat conductive layer are not grounded. Therefore, the heat dissipation performance of the acoustic wave device 1 can be reliably improved.
The device chip 5 is a substrate made of lithium tantalate, lithium niobate, quartz, or piezoelectric ceramic. Therefore, the heat dissipation performance of acoustic wave device 1 can be reliably improved.
Note that the second main surface 5b of the device chip 5 may be bonded to a substrate formed of sapphire, silicon, alumina, spinel, crystal, or glass. In this case, the heat dissipation performance of acoustic wave device 1 can be improved reliably.
Further, elastic wave device 1 includes a ladder filter further including a plurality of parallel resonators. Therefore, the heat dissipation of elastic wave device 1 including the ladder filter can be reliably improved.
(second embodiment)
Fig. 7 is a schematic diagram of elastic wave device 1 according to the second embodiment. Fig. 8 is a perspective view of elastic wave device 1 according to the second embodiment. Fig. 9 and 10 are plan views of elastic wave device 1 according to the second embodiment. Note that portions similar or identical to those of the first embodiment are given the same reference numerals. The description of the similar or identical parts will be omitted.
As shown in fig. 7 to 10, the plurality of through holes 7, the plurality of heat dissipation members 6, and the plurality of thermal conduction members 16 are disposed at positions corresponding to the transmission pad Tx, the two ground pads GND, and the heat dissipation pad HR.
The metal layer 8 is formed on the second main surface 5b of the device chip 5. The metal layer 8 may also be joined to any of the heat sinks 6.
According to the second embodiment described above, the metal layer 8 is not connected to the heat sink 6. Therefore, signals between the terminals corresponding to the antenna pad ANT, the transmission pad Tx, and the reception pad Rx can be separated reliably.
(third embodiment)
Fig. 11 is a schematic diagram of a module 100 to which the elastic wave device 1 is applied according to a third embodiment. Note that portions similar or identical to those of the first embodiment are given the same reference numerals. The description of the similar or identical parts will be omitted.
In fig. 11, module 100 includes wiring board 130, integrated circuit module IC, acoustic wave device 1, inductor 111, and sealing portion 117.
The wiring substrate 130 is the same as the wiring substrate 3 in the first embodiment.
Although not shown in the drawings, the integrated circuit assembly IC is mounted inside the wiring substrate 130. The integrated circuit assembly IC comprises a switching circuit and a low noise amplifier.
The acoustic wave device 1 is mounted on a main surface of the wiring board 130.
The inductor 111 is mounted on a main surface of the wiring substrate 130. The inductor 111 is mounted for impedance matching. For example, the inductor 111 is an Integrated Passive Device (IPD).
The sealing portion 117 seals a plurality of electronic components including the acoustic wave device 1.
According to the third embodiment described above, the module 100 includes the elastic wave device 1. Therefore, the heat dissipation of the module 100 can be improved. As a result, the power durability of the module 100 can be improved.
While at least one embodiment has been described above, it is to be understood that various changes, modifications or improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the invention.
It is to be understood that the aspects of the method or apparatus described herein are not limited in their application to the details of construction and the arrangements of the components set forth in the above description or illustrated in the drawings. The methods and apparatus may be practiced in other embodiments or with other embodiments.
The examples are given by way of illustration only and not by way of limitation.
The description or words used in this disclosure are words of description rather than limitation. The use of "including," "comprising," "having," "containing," and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.
The use of "or any use of the term" or "to describe a term can be interpreted to mean one, more than one, or all of the described terms.
Front, back, left, right, top, bottom, up, down, and horizontal and vertical references are for convenience of description, and do not limit the position and spatial configuration of any of the components of the present invention. Accordingly, the foregoing description and drawings are by way of example only.
Claims (12)
1. An elastic wave device characterized by: the elastic wave device includes a substrate, a series resonator formed on a first main surface of the substrate, a wiring formed on the first main surface of the substrate and electrically connected to the series resonator, a heat sink formed on a second main surface of the substrate, a through hole penetrating the substrate and joined to the heat sink, and a heat conductive layer formed on the first main surface of the substrate and joined to the wiring and the through hole.
2. The elastic wave device according to claim 1, wherein: the thermally conductive layer is formed of a metal.
3. The elastic wave device according to claim 1, wherein: the heat conductive layer is a multilayer metal film.
4. The elastic wave device according to claim 1, wherein: the thermally conductive layer is covered by an insulating film.
5. The elastic wave device according to claim 1, wherein: the heat dissipation member is concave-convex.
6. The elastic wave device according to claim 1, wherein: the elastic wave device further includes a plurality of bump pads formed on the first main surface of the substrate, and the heat conductive layer includes one of the bump pads.
7. The elastic wave device according to claim 1, wherein: the heat sink and the heat conductive layer are not grounded.
8. The elastic wave device according to claim 1, wherein: the elastic wave device further includes a metal layer formed on the second main surface of the substrate, the metal layer not being connected to the heat sink.
9. The elastic wave device according to claim 1, wherein: the substrate is formed by lithium tantalate, lithium niobate, crystal or piezoelectric ceramics.
10. The elastic wave device according to claim 1, wherein: the second main surface of the substrate is bonded to a substrate made of sapphire, silicon, alumina, spinel, crystal, or glass.
11. The elastic wave device according to claim 1, wherein: the elastic wave device further includes a ladder filter having a plurality of parallel resonators.
12. A module comprising the elastic wave device according to any one of claims 1 to 11.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021070636A JP2022165310A (en) | 2021-04-19 | 2021-04-19 | Acoustic wave device and module equipped with the acoustic wave device |
| JP2021-070636 | 2021-04-19 |
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| Publication Number | Publication Date |
|---|---|
| CN115225053A true CN115225053A (en) | 2022-10-21 |
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| CN202111280495.4A Pending CN115225053A (en) | 2021-04-19 | 2021-11-01 | Elastic wave device and module including the same |
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| JP (1) | JP2022165310A (en) |
| CN (1) | CN115225053A (en) |
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| CN117833864B (en) * | 2024-03-06 | 2024-05-14 | 成都频岢微电子有限公司 | Method for improving power capacity of duplexer |
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- 2021-04-19 JP JP2021070636A patent/JP2022165310A/en active Pending
- 2021-11-01 CN CN202111280495.4A patent/CN115225053A/en active Pending
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