CN114793100A - Elastic wave device and module - Google Patents
Elastic wave device and module Download PDFInfo
- Publication number
- CN114793100A CN114793100A CN202110851456.9A CN202110851456A CN114793100A CN 114793100 A CN114793100 A CN 114793100A CN 202110851456 A CN202110851456 A CN 202110851456A CN 114793100 A CN114793100 A CN 114793100A
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- elastic wave
- wave device
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- metal pattern
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
An elastic wave device comprising: a wiring substrate, a device chip, a metal pattern, and a sealing portion; the device chip is mounted on the wiring substrate; an epitaxial portion in which the metal pattern is formed on the wiring substrate; the sealing part hermetically seals the device chip; and the metal pattern has a concave-convex portion or a saw-tooth portion, and the sealing portion is bonded to both the metal pattern and the wiring substrate. This provides an elastic wave device having excellent characteristics, that is, having better heat dissipation properties, having excellent adhesion between the sealing part and the wiring board, and being less likely to cause coupling between a metal pattern through which an electrical signal of a desired frequency band passes and a metal pattern through which an electrical signal of a desired frequency band does not pass.
Description
Technical Field
The present invention relates to an elastic wave device.
Background
A typical smart phone or the like in a mobile communication terminal is required to support communication in a plurality of high frequency bands. Therefore, a front-end module is used which is equipped with a plurality of band-pass filters for passing communication in a high frequency band.
In the front end module, an elastic wave device such as a band pass filter, a duplexer, or a quadplexer is used.
Patent document 1 (japanese patent laid-open No. 2019-54354) discloses an example of a technique relating to an elastic wave device.
The main technical problems to be solved by the present invention will be explained.
In an Acoustic Wave device such as a band pass filter or a duplexer, a device chip such as a SAW (Surface Acoustic Wave) filter is flip-chip bonded to a wiring board.
The resonator constituting the SAW filter forms a hollow region for mechanically vibrating, and is sealed with synthetic resin, metal, or the like.
Since the resonator of the acoustic wave device generates heat due to mechanical vibration or the like, a package structure having excellent heat dissipation is desired.
In addition, in order to suppress the penetration of moisture into the sealed hollow region, it is desirable that the sealing portion has high adhesion to the wiring substrate.
It is also expected that the metal pattern through which the electric signal of the desired frequency band passes and the metal pattern through which the electric signal of the desired frequency band does not pass will not be coupled.
If the heat dissipation property is poor, deterioration of characteristics, reduction of withstand voltage life, and the like occur. Further, if the adhesion between the sealing portion and the wiring board is low, the metal inside is likely to rust, resulting in deterioration of characteristics, deterioration of life, and the like. In addition, if the coupling phenomenon occurs, the characteristics are deteriorated.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide an elastic wave device having excellent characteristics that heat dissipation is improved, the sealing portion has excellent adhesion to a wiring substrate, and a metal pattern through which an electric signal of a desired frequency band passes and a metal pattern through which an electric signal of a desired frequency band does not pass are less likely to be coupled.
[ means for solving the problems ]
In order to achieve the above object, the present invention is an elastic wave device including:
a wiring substrate;
a device chip mounted on the wiring substrate;
a metal pattern formed on the epitaxial portion on the wiring substrate; and
a sealing section hermetically sealing the device chip; and is
The metal pattern has a concave-convex portion or a serrated portion, and the sealing portion is bonded to both the metal pattern and the wiring substrate.
In one aspect of the present invention, the elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip;
in a region of the concave-convex portion or the serrated portion adjacent to the electrode pad, an area where the sealing portion is joined to the wiring substrate is larger than an area where the sealing portion is joined to the metal pattern.
In one aspect of the present invention, the elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip; and is
An area of the sealing part joined to the metal pattern in a region of the concavo-convex portion or the serrated portion adjacent to the electrode pad is smaller than an area of the sealing part joined to the metal pattern in a region of the concavo-convex portion or the serrated portion not adjacent to the electrode pad.
In one aspect of the present invention, the elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip; and is
The plurality of electrode pads are formed, at least one of the electrode pads is at ground potential, and the electrode pad at ground potential is electrically connected with the metal pattern.
In one aspect of the present invention, the elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip; and is
The elastic wave device has an element pattern formed on the wiring substrate and electrically connected to the electrode pad; and an area of the sealing portion bonded to the wiring substrate in a region of the concave-convex portion or the indented portion adjacent to the element pattern is larger than an area of the sealing portion bonded to the metal pattern.
In one aspect of the present invention, the elastic wave device has an electrode pad formed on the wiring substrate and electrically connected to the device chip; and is
The elastic wave device has an element pattern formed on the wiring substrate and electrically connected to the electrode pad; and an area of the seal portion joined to the metal pattern in a region of the concavo-convex portion or the serrated portion adjacent to the element pattern is smaller than an area of the seal portion joined to the metal pattern in a region of the concavo-convex portion or the serrated portion not adjacent to the element pattern.
In one aspect of the present invention, the sealing portion includes a synthetic resin.
In one aspect of the invention, the device chip is a SAW filter.
In one aspect of the present invention, the device chip is a filter using a piezoelectric thin film resonator.
In one aspect of the present invention, a duplexer having two device chips is mounted on the wiring substrate.
In one aspect of the present invention, the metal pattern is not formed on the outermost portion of the wiring substrate.
According to another aspect of the present invention, there is provided a module including the aforementioned elastic wave device.
The invention has the beneficial effects that: according to the present invention, it is possible to provide an elastic wave device having excellent characteristics, that is, excellent heat dissipation, excellent adhesion between a sealing portion and a wiring substrate, and less possibility of coupling between a metal pattern through which an electric signal of a desired frequency band passes and a metal pattern through which an electric signal of a desired frequency band does not pass.
Drawings
Fig. 1 is a sectional view of an elastic wave device according to a first embodiment.
Fig. 2 is a diagram showing an example of the configuration of the main surface of the wiring substrate on which the device chip is mounted.
Fig. 3 is a diagram showing another configuration example of the main surface of the wiring substrate on which the device chip is mounted.
Fig. 4 is a diagram for explaining the structure of the device chip.
Fig. 5 is a diagram showing characteristics of the acoustic wave device according to the present embodiment and a comparative example.
Fig. 6 is a plan view showing an example in which the elastic wave element is a surface acoustic wave resonator.
Fig. 7 is a cross-sectional view showing an example in which the elastic wave device is a piezoelectric thin film resonator.
Fig. 8 is a cross-sectional view of a module of a second embodiment of the invention.
Fig. 9 is a schematic diagram showing a circuit configuration of the module.
Detailed Description
Hereinafter, the present invention will be explained in detail by describing a specific embodiment thereof with reference to the drawings.
Fig. 1 is a sectional view of elastic wave device 1 of the present embodiment.
As shown in fig. 1, elastic wave device 1 of the present embodiment includes: a wiring substrate 3; and two device chips 5 mounted on the wiring substrate 3.
In the present embodiment, an example of an acoustic wave device as a duplexer in which two device chips 5 are mounted is shown, but it is needless to say that an acoustic wave device as a band pass filter having one device chip 5 or a quadruplex in which four device chips 5 are mounted may be applied to the present invention. In addition, a functional element for realizing a duplexer can be formed on one device chip.
For example, a multilayer substrate made of resin, a Low Temperature Co-fired ceramic (LTCC) multilayer substrate made of a plurality of dielectric layers, or the like is used as the wiring substrate 3. The wiring board 3 includes a plurality of external connection terminals 31.
The device chip 5 may be a substrate made of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz, or a piezoelectric ceramic, for example.
The device chip 5 may be a substrate in which a piezoelectric substrate and a supporting substrate are bonded to each other. For example, a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate can be used as the support substrate.
A metal pattern 7 and a plurality of electrode pads 9 are formed on the wiring substrate 3. The metal pattern 7 is formed on an epitaxial portion of the wiring substrate 3. In addition, the electrode pad 9 is formed inside the metal pattern 7. The metal pattern 7 and the electrode pad 9 can be made of copper or an alloy containing copper, for example. The metal pattern 7 and the electrode pad 9 may have a thickness of, for example, 10 μm to 20 μm.
A sealing portion 17 is formed so as to cover the device chip 5. The sealing portion 17 may be formed of an insulator such as a synthetic resin, or may be formed of a metal to hermetically seal the device chip 5. Examples of the synthetic resin include, but are not limited to, epoxy resin, polyimide, and the like. It is preferable to use an epoxy resin, and to form the sealing portion 17 using a low-temperature hardening process.
The device chip 5 is mounted on the wiring substrate 3 through bumps 15 by flip chip bonding.
The bump 15 can be, for example, a gold bump. The height of the bump 15 is, for example, 20 μm to 50 μm.
The electrode pads 9 are electrically connected to the device chip 5 via bumps 15.
Fig. 2 is a diagram showing an example of the configuration of the main surface of the wiring substrate 3 on which the device chip 5 is mounted.
As shown in fig. 2, a metal pattern 7 is formed on an epitaxial portion of the wiring substrate 3. The metal pattern 7 has a concavo-convex portion or a serrated portion. In addition, the metal pattern 7 does not necessarily have to be a continuous metal pattern, and may be formed with a discontinuous portion.
An AREA17 between a solid line indicating an extension of the wiring substrate 3 and a dashed line indicating an inner side of the solid line indicates an AREA where the sealing portion 17 is joined. The region AREA17 where the sealing portion 17 is joined is a region where the sealing portion 17 is joined to the wiring substrate 3, and a region where the sealing portion 17 is joined to the metal pattern 7 formed on the wiring substrate 3. That is, the sealing portion 17 (not shown in fig. 2) is bonded to both the wiring substrate 3 and the metal pattern 7.
As shown in fig. 2, a plurality of electrode pads 9 electrically connected to the device chip 5 are formed on the wiring substrate 3. The partial electrode pad 9 is electrically connected to the metal pattern 7, and is formed as an electrode pad GND9 serving as a ground potential. This can strengthen the grounding.
In some embodiments, an element pattern 91 is formed on the wiring substrate 3. Part of the electrode pads 9 is electrically connected to the element pattern 91. The element pattern 91 can be formed appropriately for the purpose of adding an inductance component or the like, for example.
As shown in fig. 2, in a region ADJ9 indicated by a chain line, an area where the sealing portion 17 is joined to the wiring substrate 3 is larger than an area where the sealing portion 17 is joined to the metal pattern 7, and the region ADJ9 is adjacent to the electrode pad 9 and is a region of the concave-convex portion or the zigzag portion of the metal pattern 7.
In this way, a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the electrode pad 9 and the metal pattern 7 can be ensured.
In addition, as shown in fig. 2, the area where the seal 17 is joined to the metal pattern 7 in the region ADJ9 indicated by the chain line is smaller than the area where the seal 17 is joined to the metal pattern 7 in the region NOTADJ9 indicated by the chain line, the region ADJ9 is adjacent to the electrode pad 9 and is a region of the concave-convex portion or the indented portion of the metal pattern 7, and the region NOTADJ9 is not adjacent to the electrode pad 9 and is a region of the concave-convex portion or the indented portion of the metal pattern 7. This makes it easy to secure a distance sufficient for suppressing the coupling phenomenon between the electrode pad 9 and the metal pattern 7, and to secure an area of the metal pattern 7 sufficient for heat dissipation of the wiring substrate 3.
As shown in fig. 2, in a region ADJ91 indicated by a chain line, an area where the sealing portion 17 is joined to the wiring substrate 3 is larger than an area where the sealing portion 17 is joined to the metal pattern 7, and the region ADJ91 is adjacent to the element pattern 91 and is a region of an uneven portion or a zigzag portion of the metal pattern 7.
This ensures a distance sufficient to suppress the occurrence of the coupling phenomenon between the element pattern 91 and the metal pattern 7.
In addition, as shown in fig. 2, the area where the seal portion 17 in the region ADJ91 indicated by the chain line is joined to the metal pattern 7 is smaller than the area where the seal portion 17 in the region NOTADJ91 indicated by the chain line is joined to the metal pattern 7, the region ADJ91 is adjacent to the element pattern 91 and is a region of the concave-convex portion or the indented portion of the metal pattern 7, and the region NOTADJ91 is not adjacent to the element pattern 91 and is a region of the concave-convex portion or the indented portion of the metal pattern 7.
This makes it easy to secure a distance for sufficiently suppressing the occurrence of the coupling phenomenon between the element pattern 91 and the metal pattern 7, and to secure an area of the metal pattern 7 sufficient for heat dissipation of the wiring substrate 3.
Fig. 3 is a diagram showing another configuration example of the main surface of the wiring substrate 3 on which the device chip 5 is mounted.
As shown in fig. 3, the metal pattern 7 is not formed in the outermost extension 10 of the wiring substrate 3. With such a configuration, the adhesion between the sealing portion 17 and the wiring substrate 3 is further improved. In addition, the metal pattern 7 does not necessarily have to be a continuous metal pattern, and may be formed with discontinuous portions. The other constitution is the same as that described in fig. 2.
Fig. 4 is a diagram for explaining the structure of the device chip 5.
As shown in fig. 4, an elastic wave element 52 and a wiring pattern 54 are formed on the device chip 5.
An insulator 56 is formed on the wiring pattern 54. For the insulator 56, polyimide can be used, for example. The insulator 56 is formed to have a film thickness of 1000nm, for example.
A wiring pattern 54 is also formed on the insulator 56, and wirings are formed so as to intersect three-dimensionally via the insulator 56.
The wiring pattern 54 includes wirings constituting an input pad In, an output pad Out, and a ground pad GND. Further, wiring pattern 54 is electrically connected to acoustic wave element 52.
As shown in fig. 4, a plurality of elastic wave elements 52 are formed, whereby a bandpass filter can be configured, for example. The band pass filter is designed to pass only an electric signal of a desired frequency band among electric signals inputted from the input pad In.
An electric signal of a desired frequency band is output to an output pad Out after passing through a band-pass filter.
The electric signal output to the output pad Out is output from the external connection terminal 31 of the wiring substrate 3 via the bump 15 and the electrode pad 9.
Fig. 5 is a diagram showing characteristics of elastic wave device 1 according to the present embodiment and a comparative example.
The comparative example has the same configuration as elastic wave device 1 of the present embodiment except that the metal pattern formed on the wiring substrate does not have the uneven portions or the saw-tooth portions.
The waveform indicated by the solid line represents the characteristics of elastic wave device 1 of the present embodiment, and the characteristic indicated by the broken line represents the characteristics of the comparative example.
As shown in fig. 5, it is understood that elastic wave device 1 of the present embodiment has a reduced coupling phenomenon and improved isolation characteristics as compared with the comparative example. Particularly in the frequency band of 1.9GHz to 2.0GHz, a significant improvement in characteristics is observed.
Fig. 6 is a plan view showing an example in which the acoustic wave element 52 is a surface acoustic wave resonator.
As shown in fig. 6, an IDT (inter digital Transducer) 52a and a reflector 52b for exciting a surface acoustic wave are formed on the device chip 5. The IDT 52a has a pair of comb electrodes 52c facing each other.
Each comb electrode 52c has a plurality of electrode fingers 52d, and a bus bar 52e connecting the plurality of electrode fingers 52 d. Reflectors 52b are provided on both sides of the IDT 52 a.
The IDT 52a and the reflectors 52b are made of an alloy of aluminum and copper, for example. IDT 52a and reflectors 52b are thin films having a thickness of, for example, 150nm to 400 nm.
The IDT 52a and the reflectors 52b may be made of other metals, such as titanium, palladium, silver, and other suitable metals, or alloys thereof, and may be made of these alloys. The IDT 52a and the reflectors 52b may be formed of a laminated metal film in which a plurality of metal layers are laminated.
Fig. 7 is a cross-sectional view showing an example in which elastic wave element 52 is a piezoelectric thin film resonator.
As shown in fig. 7, a piezoelectric film 62 is provided on the chip substrate 60. A lower electrode 64 and an upper electrode 66 are provided so as to sandwich the piezoelectric film 62. A gap 68 is formed between the lower electrode 64 and the chip substrate 60. The lower electrode 64 and the upper electrode 66 excite an elastic wave of a thickness longitudinal vibration mode in the piezoelectric film 62.
For the chip substrate 60, a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass can be used. For example, aluminum nitride can be used for the piezoelectric film 62.
For example, a metal such as ruthenium can be used for the lower electrode 64 and the upper electrode 66.
The elastic wave element 52 is suitably employed in a multiple mode type filter or a ladder type filter to obtain desired characteristics of the band pass filter.
According to the above-described embodiment of the present invention, it is possible to provide an elastic wave device having excellent characteristics that heat dissipation is improved, the sealing portion has excellent adhesion to the wiring substrate, and the metal pattern through which an electric signal of a desired frequency band passes and the metal pattern through which an electric signal of a desired frequency band does not pass are less likely to be coupled.
(second embodiment)
Next, a second example as another embodiment of the present invention will be explained.
Fig. 8 is a cross-sectional view of a module 100 of a second embodiment of the present invention.
As shown in fig. 8, elastic wave device 1 is mounted on the main surface of wiring board 130. The elastic wave device 1 may be a double filter including, for example, a1 st band-pass filter BPF1 and a2 nd band-pass filter BPF2, but is not shown.
The wiring substrate 130 has a plurality of external connection terminals 131. The external connection terminals 131 are configured as a motherboard mounted on a predetermined mobile communication terminal.
On the main surface of the wiring substrate 130, a1 st inductor 111 and a2 nd inductor 112 are mounted for impedance matching. Module 100 is sealed by sealing portion 117 for sealing a plurality of electronic components including acoustic wave device 1. An integrated circuit component IC is mounted inside the wiring substrate 130. The integrated circuit part IC includes a switching circuit SW, a1 st low noise amplifier LNA1, and a2 nd low noise amplifier LNA2, but not shown.
Fig. 9 is a schematic diagram showing a circuit configuration of the module 100.
As shown in fig. 9, the common input terminal 101 (external connection terminal 131) of the module 100 is connected to the antenna terminal ANT. The 1 st output terminal 103 and the 2 nd output terminal 105 (external connection terminal 131) are connected to a signal processing circuit, but are not shown.
From the common input terminal 101, a signal passing through the 1 st band-pass filter BPF1 and a signal passing through the 2 nd band-pass filter BPF2 are divided by the switching circuit SW.
The signal having passed through the 1 st band pass filter BPF1 is impedance-matched by the 1 st inductor 111, amplified by the 1 st low noise amplifier LNA1, and then output from the 1 st output terminal 103. Alternatively, when the 1 st band pass filter BPF1 is a transmission filter, the 1 st output terminal 103 functions as an input terminal, and a signal amplified by the 1 st low noise amplifier LNA1 and impedance-matched by the 1 st inductor 111 is transmitted from the antenna terminal ANT through the 1 st band pass filter BPF 1.
The signal passing through the 2 nd band pass filter BPF2 is impedance-matched by the 2 nd inductor 112, amplified by the 2 nd low noise amplifier LNA2, and then output from the 2 nd output terminal 105. Alternatively, when the 2 nd band pass filter BPF2 is a transmission filter, the 2 nd output terminal 105 functions as an input terminal, and a signal amplified by the 2 nd low noise amplifier LNA2 and impedance-matched by the 2 nd inductor 112 is transmitted from the antenna terminal ANT through the 2 nd band pass filter BPF 2.
Other configurations are not repeated as described in the first embodiment.
According to the embodiments of the present invention described above, it is possible to provide a module having an elastic wave device with excellent characteristics, that is, excellent heat dissipation, excellent adhesion between a sealing portion and a wiring substrate, and less possibility of coupling between a metal pattern through which an electric signal of a desired frequency band passes and a metal pattern through which an electric signal of a desired frequency band does not pass.
It is to be understood that the present invention is not limited to the embodiments described above, but encompasses all embodiments which can achieve the object of the present invention.
Furthermore, while at least one embodiment has been described above, it is to be appreciated various alterations, modifications, or improvements will readily occur to those skilled in the art.
Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the invention. It is to be understood that the aspects of the method or apparatus described herein are not limited in their application to the details of construction and the arrangements of the components set forth in the above description or illustrated in the drawings. The methods and apparatus may be practiced in other embodiments or may be practiced in other embodiments. The examples are given by way of illustration only and not by way of limitation. Also, the description or words used herein are for illustration only and should not be taken in a limiting sense. The use of "including," "comprising," "having," "containing," and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items. The use of "or any use of the term" or "to describe a term can be interpreted to mean one, more than one, or all of the described terms. Front, back, left, right, top, bottom, up, down, and horizontal and vertical references are for convenience of description, and do not limit the position and spatial configuration of any of the components of the present invention. Accordingly, the foregoing description and drawings are by way of example only.
Claims (12)
1. An elastic wave device characterized by: the elastic wave device includes:
a wiring substrate;
a device chip mounted on the wiring substrate;
a metal pattern formed on the epitaxial portion on the wiring substrate; and
a sealing part hermetically sealing the device chip; and is provided with
The metal pattern has a concave-convex portion or a serrated portion, and the sealing portion is bonded to both the metal pattern and the wiring substrate.
2. The elastic wave device according to claim 1, wherein: the elastic wave device is provided with an electrode welding pad which is formed on the wiring substrate and is electrically connected with the device chip; in a region of the concave-convex portion or the indented portion adjacent to the electrode pad, an area where the sealing portion is joined to the wiring substrate is larger than an area where the sealing portion is joined to the metal pattern.
3. The elastic wave device according to claim 1, wherein: the elastic wave device is provided with an electrode welding pad which is formed on the wiring substrate and is electrically connected with the device chip; an area of the sealing part joined to the metal pattern in a region of the concavo-convex portion or the serrated portion adjacent to the electrode pad is smaller than an area of the sealing part joined to the metal pattern in a region of the concavo-convex portion or the serrated portion not adjacent to the electrode pad.
4. The elastic wave device according to claim 1, wherein: the elastic wave device is provided with an electrode pad which is formed on the wiring substrate and is electrically connected with the device chip; the plurality of electrode pads are formed, at least one of the electrode pads is at ground potential, and the electrode pad at ground potential is electrically connected with the metal pattern.
5. The elastic wave device according to claim 1, wherein: the elastic wave device is provided with an electrode pad which is formed on the wiring substrate and is electrically connected with the device chip; the elastic wave device is provided with an element pattern which is formed on the wiring substrate and is electrically connected with the electrode welding pad; an area of the sealing portion bonded to the wiring substrate in a region of the concave-convex portion or the indented portion adjacent to the element pattern is larger than an area of the sealing portion bonded to the metal pattern.
6. The elastic wave device according to claim 1, wherein: the elastic wave device is provided with an electrode welding pad which is formed on the wiring substrate and is electrically connected with the device chip; the elastic wave device is provided with an element pattern which is formed on the wiring substrate and is electrically connected with the electrode welding pad; an area of the seal portion joined to the metal pattern in a region of the concavo-convex portion or the serrated portion adjacent to the element pattern is smaller than an area of the seal portion joined to the metal pattern in a region of the concavo-convex portion or the serrated portion not adjacent to the element pattern.
7. The elastic wave device according to claim 1, wherein: the sealing portion includes a synthetic resin.
8. The elastic wave device according to claim 1, wherein: the device chip is a SAW filter.
9. The elastic wave device according to claim 1, wherein: the device chip is a filter using a piezoelectric thin film resonator.
10. The elastic wave device according to claim 1, wherein: the elastic wave device is a duplexer in which two device chips are mounted on the wiring board.
11. The elastic wave device according to claim 1, wherein: the outermost portion of the wiring substrate is not formed with the metal pattern.
12. A module, characterized by: the module includes an elastic wave device according to any one of claims 1 to 11.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021009213A JP6954701B1 (en) | 2021-01-23 | 2021-01-23 | Elastic wave device |
| JP2021-009213 | 2021-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114793100A true CN114793100A (en) | 2022-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110851456.9A Pending CN114793100A (en) | 2021-01-23 | 2021-07-27 | Elastic wave device and module |
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| Country | Link |
|---|---|
| JP (1) | JP6954701B1 (en) |
| CN (1) | CN114793100A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7465515B1 (en) | 2022-11-21 | 2024-04-11 | 三安ジャパンテクノロジー株式会社 | Acoustic Wave Devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065480A (en) * | 1996-08-21 | 1998-03-06 | Matsushita Electric Ind Co Ltd | Piezoelectric vibrator component |
| JP6042689B2 (en) * | 2012-10-16 | 2016-12-14 | 太陽誘電株式会社 | Elastic wave device and design method thereof |
| JP6851131B2 (en) * | 2013-12-04 | 2021-03-31 | 株式会社半導体エネルギー研究所 | Flexible secondary battery |
| JP2016145374A (en) * | 2015-02-06 | 2016-08-12 | 株式会社ジャパンディスプレイ | Film deposition method, display device, and production method of display device |
| CN104932154A (en) * | 2015-07-08 | 2015-09-23 | 合肥鑫晟光电科技有限公司 | Display substrate, display panel and display device |
| JP6949635B2 (en) * | 2017-09-13 | 2021-10-13 | 太陽誘電株式会社 | Multiplexer |
-
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- 2021-01-23 JP JP2021009213A patent/JP6954701B1/en active Active
- 2021-07-27 CN CN202110851456.9A patent/CN114793100A/en active Pending
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| JP2022113172A (en) | 2022-08-04 |
| JP6954701B1 (en) | 2021-10-27 |
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