JP7361343B2 - module - Google Patents

Description

This disclosure relates to modules.

Patent Document 1 discloses an example of a technology related to an elastic wave device.

JP 2019-54354 Publication

The acoustic wave device is mounted on the wiring board of the module along with other electronic devices. The acoustic wave device is sealed in the sealing part along with other electronic devices. At this time, it is desired to improve the adhesion between the sealing part and the wiring board.

The present disclosure has been made to solve the above problems. An object of the present disclosure is to provide a module with excellent adhesion between a sealing part and a wiring board.

The module according to the present disclosure is
a wiring board;
an acoustic wave device mounted on the wiring board;
a first metal pattern formed on an outer edge portion of the wiring board;
a sealing part that hermetically seals the acoustic wave device;
Equipped with
The first metal pattern has an uneven portion or a jagged portion,
The sealing portion was a module bonded to both the first metal pattern and the exposed portion of the wiring board.

a first electronic device mounted on the wiring board and different from the acoustic wave device;
a second electronic device mounted on the wiring board at a position farther from an edge of the wiring board than the first electronic device;
Equipped with
In the region of the uneven portion or the jagged portion adjacent to the first electronic device and the edge of the wiring board, the area where the sealing portion and the exposed portion of the wiring board are bonded is equal to the area of the sealing portion. larger than the area where the first metal pattern and the first metal pattern are bonded;
In the region of the uneven portion or the jagged portion adjacent to the second electronic device and the edge of the wiring board, the area where the sealing portion and the exposed portion of the wiring board are bonded is equal to the area of the sealing portion In one embodiment of the present disclosure, the first metal pattern is smaller than the area where the first metal pattern is bonded to the first metal pattern.

a plurality of electrode pads electrically connected to the acoustic wave device;
Equipped with
In one aspect of the present disclosure, at least one of the plurality of electrode pads is at a ground potential, and the electrode pad at the ground potential is electrically connected to the first metal pattern.

a wiring pattern formed on the wiring board adjacent to the first metal pattern on a side closer to the center of the wiring board than the first metal pattern, and through which a signal flows;
a second metal pattern formed on the wiring board adjacent to the wiring pattern on the side closer to the center of the wiring board than the wiring pattern, having an uneven portion or a jagged portion, and having a ground potential;
An embodiment of the present disclosure includes the following.

In one form of the present invention, the sealing portion is formed of synthetic resin.

In one form of the present invention, the acoustic wave device is a filter using a surface acoustic wave resonator.

In one form of the present disclosure, the elastic wave device is a filter using an acoustic thin film resonator.

a switch mounted on the wiring board;
a power amplifier mounted on the wiring board;
Equipped with
According to one embodiment of the present disclosure, the elastic wave device is a TDD filter, the switch switches between a transmission signal and a reception signal, and the power amplifier transmits the amplified signal.

According to the present disclosure, it is possible to provide a module with excellent adhesion between the sealing part and the wiring board.

FIG. 3 is a vertical cross-sectional view of the module in Embodiment 1. 3 is an equivalent circuit diagram of a module in Embodiment 1. FIG. FIG. 3 is a plan view of main parts of the module in Embodiment 1. FIG. FIG. 3 is a plan view of the first layer of the wiring board included in the module according to the first embodiment. FIG. 3 is a plan view of the second layer of the wiring board included in the module according to the first embodiment. FIG. 3 is a plan view of the third layer of the wiring board included in the module according to the first embodiment. FIG. 3 is a plan view of the fourth layer of the wiring board included in the module according to the first embodiment. 1 is a diagram showing a first example of an acoustic wave element of an acoustic wave device mounted in a module in Embodiment 1. FIG. FIG. 7 is a diagram illustrating a second example of an acoustic wave element of an acoustic wave device mounted in a module in Embodiment 1.

Embodiments will be described according to the attached drawings. In each figure, the same or corresponding parts are given the same reference numerals. Duplicate explanations of the relevant parts will be simplified or omitted as appropriate.

Embodiment 1.
FIG. 1 is a longitudinal cross-sectional view of a module in the first embodiment.

As shown in FIG. 1, the module 1 includes a wiring board 11, a first metal pattern 12, a second metal pattern 13, a plurality of electrode pads 14, a plurality of wiring patterns 15, a plurality of bumps 16, and an acoustic wave device 17. It includes a switch 18, a power amplifier 19, a plurality of electronic devices 20, and a sealing section 21.

For example, the wiring board 11 is a multilayer board made of multilayer resin. For example, the wiring board 11 is a low temperature co-fired ceramics (LTCC) multilayer board made of a plurality of dielectric layers. The wiring board 11 includes a plurality of external connection terminals 131.

The first metal pattern 12 is formed on the outer edge portion of the wiring board 11 . For example, the first metal pattern 12 is formed of copper or an alloy containing copper. For example, the first metal pattern 12 has a thickness of 10 μm to 20 μm.

Each of the plurality of second metal patterns 13 is formed on the wiring board 11 closer to the center of the wiring board 11 than the first metal pattern 12 is. For example, each of the plurality of second metal patterns 13 is formed of copper or an alloy containing copper. For example, each of the plurality of second metal patterns 13 has a thickness of 10 μm to 20 μm.

Each of the first group of electrode pads 14 is formed on the wiring board 11 so as to overlap with the first metal pattern 12 . Each of the first group of electrode pads 14 is electrically connected to the first metal pattern 12 . For example, each of the first group of electrode pads 14 is made of copper or an alloy containing copper. For example, each of the first group of electrode pads 14 has a thickness of 10 μm to 20 μm. Each of the first group of electrode pads 14 is at ground potential.

Each of the second group of electrode pads 14 is formed on the wiring board 11 so as to overlap with the second metal pattern 13 . The second group of electrode pads 14 is electrically connected to the second metal pattern 13 . For example, each of the second group of electrode pads 14 is made of copper or an alloy containing copper. For example, each of the second group of electrode pads 14 has a thickness of 10 μm to 20 μm. Each of the second group of electrode pads 14 is at ground potential.

Each of the third group of electrode pads 14 is formed on the wiring board 11 so as not to overlap either the first metal pattern 12 or the second metal pattern 13. For example, each of the third group of electrode pads 14 is made of copper or an alloy containing copper. For example, each of the third group of electrode pads 14 has a thickness of 10 μm to 20 μm.

Each of the plurality of wiring patterns 15 is provided so that an electric signal can flow inside the module 1. Specifically, each of the plurality of wiring patterns 15 is formed between the first metal pattern 12 and the second metal pattern 13 on the wiring board 11. For example, each of the plurality of wiring patterns 15 is formed of a suitable metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, each of the plurality of wiring patterns 15 is formed of a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the wiring pattern is from 1500 nm to 4500 nm.

Each of the plurality of bumps 16 is electrically connected to one of the plurality of electrode pads 14. For example, bump 16 is a gold bump. For example, the height of the bump 16 is 10 μm to 50 μm.

For example, the elastic wave device 17 is a TDD filter that transmits and receives in the same frequency band. Acoustic wave device 17 is mounted on the main surface of wiring board 11 via bumps 16 by flip-chip bonding. Although not shown, the acoustic wave device 17 includes a wiring board, a plurality of bumps, at least one acoustic wave device chip, and a sealing part.

For example, the wiring board is equivalent to the wiring board 11.

The plurality of bumps are electrically connected to the wiring board. For example, the bumps are gold bumps. For example, the height of the bump is 10 μm to 50 μm.

For example, an acoustic wave device chip includes a chip substrate, a wiring pattern, and a plurality of acoustic wave elements.

For example, the chip substrate is formed from lithium tantalate or lithium niobate. The main surface of the chip substrate is electrically connected to the wiring board by bonding through a plurality of bumps.

The wiring pattern is formed on the main surface of the chip substrate. For example, the wiring pattern is formed of a suitable metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, the thickness of the wiring pattern is from 1500 nm to 4500 nm.

A plurality of acoustic wave elements are formed on the main surface of the chip substrate. The plurality of acoustic wave elements are electrically connected to the wiring pattern. For example, a plurality of acoustic wave elements are provided so that electrical signals in a desired frequency band can pass therethrough. For example, the plurality of elastic wave elements function as a ladder filter consisting of a plurality of series resonators and a plurality of parallel resonators.

Switch 18 is mounted on the main surface of wiring board 11. The switch 18 is electrically connected to the wiring pattern 15 by wire bonding. The switch 18 is provided to switch between the transmit signal and the receive signal of the module 1.

Power amplifier 19 is mounted on the main surface of wiring board 11 . Power amplifier 19 is electrically connected to wiring pattern 15 by wire bonding. Power amplifier 19 is provided so as to be able to amplify the transmission signal of module 1 .

For example, electronic device 20 is an inductor. For example, electronic device 20 is a capacitor. Electronic device 20 is mounted on the main surface of wiring board 11 via bumps 16 by flip-chip bonding. Electronic device 20 is implemented for impedance matching.

The sealing portion 21 is formed to cover the acoustic wave device 17 , the switch 18 , the power amplifier 19 , and the plurality of electronic devices 20 . The sealing section 21 hermetically seals the acoustic wave device 17 , the switch 18 , the power amplifier 19 , and the plurality of electronic devices 20 together with the wiring board 11 . For example, the sealing part 21 is formed of an insulator such as synthetic resin. For example, the sealing part 21 is formed of metal. For example, the sealing part 21 is formed of an insulating layer and a metal layer.

When the sealing part 21 is made of synthetic resin, the synthetic resin is epoxy resin, polyimide, or the like. Preferably, the seal 21 is formed of epoxy resin using a low temperature curing process.

Next, an overview of the operation of the module 1 will be explained using FIG. 2.
FIG. 2 is an equivalent circuit diagram of the module in the first embodiment.

As shown in FIG. 2, the module 1 includes a transmission terminal Term_T, a reception terminal Term_R, and an antenna terminal Term_ANT.

When the switch 18 is in the first state, a path for the module 1's transmission signal is established. At this time, the transmission signal passes through the power amplifier 19 after passing through the transmission terminal Term_T. At this time, the transmitted signal is amplified. The transmitted signal then passes through switch 18. The transmitted signal then passes through the elastic wave device 17. The transmitted signal then passes through the antenna terminal Term_T.

When the switch 18 is in the second state, a path for the received signal of the module 1 is established. At this time, the received signal passes through the acoustic wave device 17 after passing through the antenna terminal Term_ANT. The received signal then passes through switch 18. Thereafter, the received signal passes through the receiving terminal Term_R.

Next, the main parts of the module 1 will be explained using FIG. 3.
FIG. 3 is a plan view of the main parts of the module in the first embodiment.

As shown in FIG. 3, the first metal pattern 12 and the second metal pattern 13 have uneven portions or jagged portions. Although not shown, the sealing portion 21 is bonded to the first metal pattern 12, the second metal pattern 13, and the exposed portion of the wiring board 11.

In FIG. 3, the first electronic device 20a is arranged on the right side and below the wiring board 11. The second electronic device 20b is arranged on the right side and above the wiring board 11. The second electronic device 20b is placed further away from the right edge of the wiring board 11 than the first electronic device 20a.

In region A adjacent to the first electronic device 20a and the right edge of the wiring board 11, the area where the sealing part 21 and the exposed part of the wiring board 11 are bonded is the area where the sealing part 21 and the first metal pattern 12 are bonded. larger than the area to be

In region B adjacent to the second electronic device 20b and the right edge of the wiring board 11, the area where the sealing part 21 and the exposed part of the wiring board 11 are bonded is the area where the sealing part 21 and the first metal pattern 12 are bonded. smaller than the area to be

The wiring pattern 15 is arranged so as to be appropriately sandwiched between the metal patterns.

For example, in region C, the wiring pattern 15 is arranged so as to be sandwiched between the first metal pattern 12 and the second metal pattern 13. Specifically, the wiring pattern 15 is adjacent to the first metal pattern 12 closer to the center of the wiring board 11 than the first metal pattern 12 is. The second metal pattern 13 is adjacent to the wiring pattern 15 closer to the center of the wiring board 11 than the wiring pattern 15 is.

For example, in region D, the wiring pattern 15 is arranged so as to be sandwiched between the first metal patterns 12. Specifically, the wiring pattern 15 is arranged so as to fit into the recessed portion of the first metal pattern 12 .

For example, in region E, the wiring pattern 15 is arranged so as to be sandwiched between the same second metal patterns 13. Specifically, the wiring pattern 15 is arranged so as to fit into the recess of the second metal pattern 13.

For example, in region F, the wiring pattern 15 is arranged so as to be sandwiched between different second metal patterns 13. Specifically, one side of the second metal pattern 13 is adjacent to one side of the wiring pattern 15. The other side of the second metal pattern 13 is adjacent to the other side of the wiring pattern 15 .

Next, the wiring board 11 will be explained using FIGS. 4 to 7.
FIG. 4 is a plan view of the first layer of the wiring board included in the module according to the first embodiment. FIG. 5 is a plan view of the second layer of the wiring board included in the module according to the first embodiment. FIG. 6 is a plan view of the third layer 143 of the wiring board included in the module according to the first embodiment. FIG. 7 is a plan view of the fourth layer of the wiring board included in the module according to the first embodiment.

The first layer 141 in FIG. 4 is a layer having a surface forming the main surface of the wiring board 11. As shown in FIG. 4, the first layer 141 includes a plurality of first layer vias 141a. In the first layer 141, the first metal pattern 12 and the second metal pattern 13 are not electrically connected.

The second layer 142 in FIG. 5 is a layer bonded to the back surface of the first layer 141. As shown in FIG. 5, the second layer 142 includes a second layer metal pattern 142a, a plurality of second layer wiring patterns 142b, and a plurality of second layer vias 142c.

The third layer 143 in FIG. 6 is a layer bonded to the back surface of the second layer 142. As shown in FIG. 6, the third layer 143 includes a third layer metal pattern 143a, a plurality of third layer wiring patterns 143b, and a plurality of third layer vias 143c.

The fourth layer 144 in FIG. 7 is a layer bonded to the back surface of the third layer 143. The fourth layer 144 is a layer that forms the surface of the wiring board 11 opposite to the main surface. As shown in FIG. 7, the fourth layer 144 includes a fourth layer metal pattern 144a and a plurality of external connection terminals 131.

When the first layer 141 to the fourth layer 144 are laminated, a desired electrical connection is established. For example, the first metal pattern 12 and the second metal pattern 13 are electrically connected via a ground potential via in the first layer 141 and the second layer metal pattern 142a. As a result, the first metal pattern 12 and the second metal pattern 13 are at ground potential.

Next, a first example of the acoustic wave element will be described using FIG. 8.
FIG. 8 is a diagram showing a first example of an acoustic wave element of an acoustic wave device mounted in a module in the first embodiment.

The example in FIG. 8 is an example in which the acoustic wave element is a surface acoustic wave resonator. As shown in FIG. 8, an IDT (Interdigital Transducer) 22a and a pair of reflectors 22b are formed on the main surface of the chip substrate. One of the pair of reflectors 22b is adjacent to one side of the IDT 22a. The other of the pair of reflectors 22b is adjacent to the other side of the IDT 22a. The IDT 22a and the pair of reflectors 22b are provided to excite surface acoustic waves.

For example, the IDT 22a and the pair of reflectors 22b are formed of an alloy of aluminum and copper. For example, the IDT 22a and the pair of reflectors 22b are made of a suitable metal such as titanium, palladium, silver, or an alloy thereof. For example, the IDT 22a and the pair of reflectors 22b are formed of a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the IDT 22a and the pair of reflectors 22b is 150 nm to 400 nm.

The IDT 22a includes a pair of comb-shaped electrodes 22c. A pair of comb-shaped electrodes 22c face each other. The comb-shaped electrode 22c includes a plurality of electrode fingers 22d and a bus bar 22e. The plurality of electrode fingers 22d are arranged with their longitudinal directions aligned. The bus bar 22e connects the plurality of electrode fingers 22d.

Next, a second example of the acoustic wave element will be described using FIG. 9.
FIG. 9 is a diagram showing a second example of the acoustic wave element of the elastic wave device mounted in the module in the first embodiment.

The example in FIG. 9 is an example in which the acoustic wave element is a piezoelectric thin film resonator. In FIG. 9, the chip substrate 60 is a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass.

A piezoelectric film 62 is provided on the chip substrate 60. For example, the piezoelectric film 62 is made of aluminum nitride.

The lower electrode 64 and the upper electrode 66 are provided so as to sandwich the piezoelectric film 62 therebetween. For example, the lower electrode 64 and the upper electrode 66 are made of metal such as ruthenium.

A gap 68 is formed between the lower electrode 64 and the chip substrate 60.

In the acoustic thin film resonator, the lower electrode 64 and the upper electrode 66 excite elastic waves in the thickness longitudinal vibration mode inside the piezoelectric film 62 .

According to the first embodiment described above, the first metal pattern 12 has an uneven portion or a jagged portion. The sealing portion 21 is bonded to both the first metal pattern 12 and the exposed portion of the wiring board 11 . The boundary line of the region where the first metal pattern 12 joins with the sealing part 21 becomes longer, and furthermore, in the uneven shape, the concave part of the first metal pattern 12, and in the jagged shape, the valley part of the first metal pattern 12. The sealing portion 21 is inserted into the hole. Therefore, an anchor effect can be obtained, and the adhesion between the sealing part 21 and the wiring board 11 can be improved.

Note that the first metal pattern 12 is formed approximately 15 μm inward from the end of the wiring board 11. Therefore, the adhesion between the sealing part 21 and the end of the wiring board 11 can be improved.

Further, in the area A adjacent to the first electronic device 20a and the edge of the wiring board 11, the area where the sealing part 21 and the exposed part of the wiring board 11 are bonded is the area where the sealing part 21 and the first metal pattern 12 are bonded. Larger than the area to be joined. In region B adjacent to the second electronic device 20b and the edge of the wiring board 11, the area where the sealing part 21 and the exposed part of the wiring board 11 are bonded is the area where the sealing part 21 and the first metal pattern 12 are bonded. smaller than the area. Therefore, even in the vicinity of the first electronic device 20a near the edge of the wiring board 11, the sealing part 21 and the exposed part of the wiring board 11 come into close contact with each other, thereby improving the adhesion between the sealing part 21 and the wiring board 11. can be improved more reliably. Furthermore, from the edge of the wiring board 11 to the vicinity of the second electronic device 20b, not only the sealing part 21 and the exposed part of the wiring board 11 are in close contact with each other, but also the first metal pattern 12 having a certain area By joining the region to the sealing part 21, the adhesion between the sealing part 21 and the wiring board 11 can be improved more reliably.

Further, the second metal pattern 13 has an uneven portion or a jagged portion. The sealing portion 21 is bonded to both the second metal pattern 13 and the exposed portion of the wiring board 11 . The boundary line of the region where the second metal pattern 13 joins with the sealing part 21 becomes longer, and further, in the uneven shape, the concave part of the second metal pattern 13, and in the jagged shape, the valley part of the second metal pattern 13. The sealing portion 21 is inserted into the hole. Therefore, an anchor effect can be obtained, and the adhesion between the sealing part 21 and the wiring board 11 can be improved.

Further, the first metal pattern 12 and the second metal pattern 13 increase thermal conductivity between the wiring board 11 and the sealing part 21. Therefore, the heat dissipation of the module 1 is improved.

Further, the first metal pattern 12 is electrically connected to the electrode pad 14 at ground potential. Therefore, the ground can be strengthened. Note that the first metal pattern 12 only needs to be electrically connected to at least one electrode pad 14 at ground potential.

Further, the wiring pattern 15 is adjacent to the first metal pattern 12 on the side closer to the center of the wiring board 11 than the first metal pattern 12 is. The second metal pattern 13 is adjacent to the wiring pattern 15 closer to the center of the wiring board 11 than the wiring pattern 15 is. Therefore, reduction in coupling between the wiring pattern 15 and the ground can be suppressed. As a result, deterioration of the characteristics of the module 1 can be suppressed.

Here, when the first metal pattern 12 or the second metal pattern 13 is close to the wiring pattern 15, a parasitic capacitance is generated between the metal pattern and the wiring pattern 15. For example, when the distance between the metal pattern and the wiring pattern 15 is constant, a constant parasitic capacitance occurs. At this time, if the metal pattern has a jagged portion, the distance between the metal pattern and the wiring pattern 15 can be adjusted. Therefore, it is possible to increase the heat dissipation effect of the metal pattern as much as possible while making adjustments so that the parasitic capacitance between the metal pattern and the wiring pattern 15 does not become a problem.

Moreover, the sealing part 21 is formed of synthetic resin. Therefore, the adhesion of the sealing portion 21 to the exposed portion of the wiring board 11 can be particularly improved.

Further, the acoustic wave device 17 is a filter using a surface acoustic wave resonator. Therefore, it is possible to obtain a module 1 through which electrical signals of a desired frequency band pass.

Further, the elastic wave device 17 is a filter using an acoustic thin film resonator. Therefore, it is possible to obtain a module 1 through which electrical signals of a desired frequency band pass.

Moreover, the elastic wave device 17 is a TDD filter. In the elastic wave device 17, a switch 18 switches between a transmitted signal and a received signal. The elastic wave device 17 transmits a signal amplified by the power amplifier 19. In the module 1, not only can a transmission signal and a reception signal be switched, but also an appropriate transmission signal can be output.

As the acoustic wave device 17, a duplexer on which two acoustic wave device chips are mounted, a bandpass filter on which one acoustic wave device chip is mounted, and a quadplexer on which four acoustic wave device chips are mounted are employed. You can.

Further, as the acoustic wave device 17, an acoustic wave device chip may be directly mounted on the wiring board 11.

While several aspects of at least one embodiment have been described, it is to be understood that various alterations, modifications, and improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of, and are intended to be within the scope of, this disclosure.

It should be understood that the method and apparatus embodiments described herein are not limited to application to the details of structure and arrangement of components described in the foregoing description or illustrated in the accompanying drawings. The methods and apparatus may be implemented in other embodiments and of being practiced or carried out in various ways.

Specific implementations are provided herein for illustrative purposes only and are not intended to be limiting.

The expressions and terminology used in this disclosure are for descriptive purposes and should not be considered limiting. The use of "comprising," "comprising," "having," "including" and variations thereof herein means the inclusion of the items listed below and their equivalents and additional items.

References to "or" shall be construed to mean that any term listed using "or" refers to one, more than one, and all of the listed terms. can be done.

References to front and back, left and right, top and bottom, horizontal and vertical, and front and back are intended for convenience of description. Such reference is not intended to limit the components of the present disclosure to any one positional or spatial orientation. Accordingly, the above description and drawings are illustrative only.

1 module, 11 wiring board, 12 first metal pattern, 13 second metal pattern, 14 electrode pad, 15 wiring pattern, 16 bump, 17 acoustic wave device, 18 switch, 19 power amplifier, 20 electronic device, 20a first electron device, 20b second electronic device, 21 sealing part, 22a IDT, 22b reflector, 22c comb-shaped electrode, 22d electrode finger, 22e bus bar, 60 chip substrate, 62 piezoelectric film, 64 lower electrode, 66 upper electrode, 68 void, 131 external connection terminal, 141 first layer, 141a via for first layer, 142 second layer, 142a metal pattern for second layer, 142b wiring pattern for second layer, 142c via for second layer, 143 third layer, 143a Metal pattern for third layer, 143b Wiring pattern for third layer, 143c Via for third layer, 144 Fourth layer, 144a Metal pattern for fourth layer

Claims (8)

a wiring board;
an acoustic wave device mounted on the wiring board;
a first metal pattern formed on an outer edge portion of the wiring board;
a sealing part that hermetically seals the acoustic wave device;
Equipped with
The first metal pattern has an uneven portion or a jagged portion,
In the module, the sealing portion is bonded to both the first metal pattern and the exposed portion of the wiring board. a first electronic device mounted on the wiring board and different from the acoustic wave device;
a second electronic device mounted on the wiring board at a position farther from an edge of the wiring board than the first electronic device;
Equipped with
In the region of the uneven portion or the jagged portion adjacent to the first electronic device and the edge of the wiring board, the area where the sealing portion and the exposed portion of the wiring board are bonded is equal to the area of the sealing portion. larger than the area where the first metal pattern and the first metal pattern are bonded;
In the region of the uneven portion or the jagged portion adjacent to the second electronic device and the edge of the wiring board, the area where the sealing portion and the exposed portion of the wiring board are bonded is equal to the area of the sealing portion The module according to claim 1, wherein the area is smaller than the area where the first metal pattern and the first metal pattern are bonded. a plurality of electrode pads electrically connected to the acoustic wave device;
Equipped with
3. The module according to claim 1, wherein at least one of the plurality of electrode pads is at ground potential, and the electrode pad at ground potential is electrically connected to the first metal pattern. a wiring pattern formed on the wiring board adjacent to the first metal pattern on a side closer to the center of the wiring board than the first metal pattern, and through which a signal flows;
a second metal pattern formed on the wiring board adjacent to the wiring pattern on the side closer to the center of the wiring board than the wiring pattern, having an uneven portion or a jagged portion, and having a ground potential;
4. The module according to claim 3, comprising: The module according to any one of claims 1 to 4, wherein the sealing part is made of synthetic resin. The module according to any one of claims 1 to 5, wherein the acoustic wave device is a filter using a surface acoustic wave resonator. The module according to any one of claims 1 to 5, wherein the elastic wave device is a filter using an acoustic thin film resonator. a switch mounted on the wiring board; a power amplifier mounted on the wiring board;
Equipped with
8. The elastic wave device is a TDD filter, the switch switches between a transmission signal and a reception signal, and the power amplifier transmits a signal amplified. module.

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