CN115882810A - Module comprising an elastic wave device - Google Patents
Module comprising an elastic wave device Download PDFInfo
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- CN115882810A CN115882810A CN202211155167.6A CN202211155167A CN115882810A CN 115882810 A CN115882810 A CN 115882810A CN 202211155167 A CN202211155167 A CN 202211155167A CN 115882810 A CN115882810 A CN 115882810A
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- elastic wave
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A module comprising an elastic wave device, comprising: a wiring substrate; an elastic wave device mounted on the wiring board; a first metal pattern formed on an outer edge portion on the wiring substrate; and a sealing part for hermetically sealing the elastic wave device; the first metal pattern has a concavo-convex portion or a saw-toothed portion, and the sealing portion connects the first metal pattern and an exposed portion of the wiring substrate. Thus, a module including an elastic wave device having excellent adhesion between the sealing portion and the wiring board can be provided.
Description
Technical Field
The present disclosure relates to a module including an elastic wave device.
Background
Japanese patent document 1 (japanese patent laid-open No. 2019-54354) exemplifies a technique regarding an elastic wave device.
The acoustic wave device is mounted on a wiring board of the module together with other electronic devices. The elastic wave device is sealed by a sealing portion together with the other electronic devices. At this time, the adhesion between the sealing part and the wiring substrate needs to be improved.
Disclosure of Invention
In view of the above problems, an object of the present disclosure is to provide a module including an acoustic wave device having excellent adhesion between a sealing portion and a wiring substrate.
The present disclosure includes a module of an elastic wave device, including:
a wiring substrate;
an elastic wave device mounted on the wiring board;
a first metal pattern formed on an outer edge portion on the wiring substrate; and
a sealing unit that hermetically seals the elastic wave device;
the first metal pattern has a structured portion, and the sealing portion is joined to the exposed portion of the wiring substrate and the first metal pattern.
In one aspect of the present disclosure, the module including an elastic wave device further includes:
a first electronic device mounted on the wiring substrate and different from the elastic wave device; and
a second electronic device mounted on the wiring substrate and disposed at a position farther from an outer edge of the wiring substrate than the first electronic device;
in a region of the structured portion where the first electronic device is connected to the outer edge of the wiring substrate, an area where the sealing portion is joined to the exposed portion of the wiring substrate is larger than an area where the sealing portion is joined to the first metal pattern, and in a region of the structured portion where the second electronic device is connected to the outer edge of the wiring substrate, an area where the sealing portion is joined to the exposed portion of the wiring substrate is smaller than an area where the sealing portion is joined to the first metal pattern.
In one aspect of the present disclosure, the module including an elastic wave device further includes a plurality of electrode pads electrically connected to the elastic wave device, at least one of the electrode pads is at a ground potential, and the electrode pad at the ground potential is electrically connected to the first metal pattern.
In one aspect of the present disclosure, the module including an elastic wave device further includes:
a wiring pattern which is closer to the center of the wiring substrate than the first metal pattern, is adjacent to the first metal pattern, is formed on the wiring substrate, and allows a signal to flow therethrough; and
a second metal pattern closer to the center of the wiring substrate than the wiring pattern, adjacent to the wiring pattern and formed on the wiring substrate, having a structured portion, and serving as a ground potential.
In one aspect of the present disclosure, the structured portion of the first metal pattern has a concave-convex shape.
In one aspect of the present disclosure, the structured portion of the first metal pattern is in a zigzag shape.
In one aspect of the present disclosure, the sealing portion is formed of a synthetic resin.
In one aspect of the present disclosure, the elastic wave device is a filter using a surface acoustic wave resonator.
In one aspect of the present disclosure, the elastic wave device is a filter using a thin film bulk acoustic wave resonator.
In one aspect of the present disclosure, the module including the elastic wave device further includes a switch mounted on the wiring substrate, and a power amplifier mounted on the wiring substrate, and the elastic wave device is a time division duplex filter, and the switch can switch between a transmission signal and a reception signal and transmit a signal amplified by the power amplifier.
The invention has the beneficial effects that: according to the present disclosure, a module including an acoustic wave device having excellent adhesion between a sealing portion and a wiring substrate can be provided.
Drawings
Fig. 1 is a sectional view of a module including an elastic wave device according to a first embodiment.
Fig. 2 is an equivalent circuit diagram of a module including an elastic wave device of the first embodiment.
Fig. 3 is a plan view of a main part of a module including an elastic wave device of the first embodiment.
Fig. 4 is a plan view of a first layer of a wiring substrate of a module including an elastic wave device according to the first embodiment.
Fig. 5 is a plan view of a second layer of the wiring substrate of the module including an elastic wave device of the first embodiment.
Fig. 6 is a plan view of a third layer of the wiring substrate of the module including an elastic wave device of the first embodiment.
Fig. 7 is a plan view of a fourth layer of the wiring substrate of the module including an elastic wave device according to the first embodiment.
Fig. 8 shows a first example of an acoustic wave device mounted on the module including an acoustic wave device according to the first embodiment.
Fig. 9 is a second example of an elastic wave device mounted on the module including an elastic wave device in the first example.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings. The same reference numbers are used throughout the drawings to refer to the same or corresponding parts. The same or corresponding portions will simplify or omit the duplicated description.
(first embodiment)
Fig. 1 is a sectional view of a module including an elastic wave device according to a first embodiment.
As shown in fig. 1, the electronic component package module 1 includes a wiring substrate 11, a first metal pattern 12, a plurality of second metal patterns 13, a plurality of electrode pads 14, a plurality of wiring patterns 15, a plurality of bumps 16, an elastic wave device 17, a switch 18, a power amplifier 19, a plurality of electronic devices 20, and a sealing part 21.
The wiring substrate 11 is, for example, a multilayer substrate formed of a plurality of layers of resin. For example, the wiring substrate 11 is a Low Temperature Co-fired ceramic (LTCC) multilayer substrate including a plurality of dielectric layers, or the like. The wiring board 11 includes a plurality of external connection terminals 131.
The first metal pattern 12 is formed on the outer edge portion on the wiring substrate 11. For example, the first metal pattern 12 is formed of copper or an alloy containing copper. For example, the first metal pattern 12 has a thickness of 10 μm to 20 μm.
The second metal patterns 13 are each formed on the wiring substrate 11 closer to the center of the wiring substrate 11 than the first metal patterns 12. For example, the second metal patterns 13 are each formed of copper or an alloy containing copper. For example, the second metal patterns 13 each have a thickness of 10 μm to 20 μm.
The electrode pads 14 of the first group are each formed on the wiring substrate 11, and overlap with the first metal pattern 12. The electrode pads 14 of the first group are each electrically connected to the first metal pattern 12. For example, the electrode pads 14 of the first group are each formed of copper or an alloy containing copper. For example, the electrode pads 14 of the first group each have a thickness of 10 μm to 20 μm. The electrode pads 14 of the first set each serve as a ground potential.
The electrode pads 14 of the second group are each formed on the wiring substrate 11, and overlap the second metal pattern 13. The electrode pads 14 of the second group are electrically connected to the second metal pattern 13. For example, the electrode pads 14 of the second group are each formed of copper or an alloy containing copper. For example, the electrode pads 14 of the second group each have a thickness of 10 μm to 20 μm. The electrode pads 14 of the second set each serve as a ground potential.
The electrode pads 14 of the third group are each formed on the wiring substrate 11, and do not overlap with the first metal pattern 12 and the second metal pattern 13. For example, the electrode pads 14 of the third group are each formed of copper or an alloy containing copper. For example, the electrode pads 14 of the third group each have a thickness of 10 μm to 20 μm.
The plurality of wiring patterns 15 are each provided inside the module 1 including an elastic wave device, and allow electric signals to flow therethrough. Specifically, the wiring patterns 15 are each formed between the first metal pattern 12 and the second metal pattern 13 on the wiring substrate 11 (see fig. 4). The wiring patterns 15 are each formed of an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like, for example. For example, each of the wiring patterns 15 is formed of a laminated metal film in which a plurality of metal layers are laminated. For example, the wiring pattern 15 has a thickness of, for example, 1500nm to 4500nm.
The plurality of bumps 16 are each electrically connected to any one of the plurality of electrode pads 14. For example, the bump 16 is gold. For example, the height of the bump 16 is 10 μm to 50 μm.
For example, the elastic wave device 17 is a Time Division Duplex (TDD) filter that transmits and receives signals in the same frequency band. The acoustic wave device 17 is mounted on the electrode pad 14 on the main surface of the wiring substrate 11 by flip-chip bonding using the bump 16. Although not shown in the drawings, the acoustic wave device 17 includes a wiring substrate, a plurality of bumps, at least one acoustic wave device chip, and a sealing portion.
For example, the wiring board of the acoustic wave device 17 is the same as the wiring board 11 of the module 1 including the acoustic wave device.
The bump is electrically connected to the wiring substrate. For example, the bumps are gold. For example, the height of the bump is 10 μm to 50 μm.
For example, the elastic wave device chip has a chip substrate, a wiring pattern, and a plurality of elastic wave elements.
For example, the chip substrate is formed of lithium tantalate or lithium niobate. The main surface of the chip substrate is electrically connected to the wiring substrate by bonding the bumps to the wiring substrate.
The wiring pattern of the elastic wave device chip is formed on a main surface of the chip substrate. For example, the wiring pattern of the elastic wave device chip is formed of an appropriate metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. For example, the thickness of the wiring pattern of the elastic wave device chip is, for example, 1500nm to 4500nm.
The elastic wave element is formed on a main surface of the chip substrate. The elastic wave device is electrically connected to the wiring pattern of the elastic wave device chip. For example, the elastic wave element can pass an electric signal of a desired frequency band. For example, the elastic wave element functions as a ladder filter including a plurality of series resonators and a plurality of parallel resonators.
The switch 18 is mounted on the main surface of the wiring substrate 11. The switch 18 is electrically connected to the wiring pattern 15 by a wire W1. The switch 18 enables the module 1 including the elastic wave device to switch between transmitting and receiving signals.
The power amplifier 19 is mounted on the main surface of the wiring board 11. The power amplifier 19 is electrically connected to the wiring pattern 15 by a wire W2. The power amplifier 19 is capable of amplifying the transmission signal of the module 1 including an elastic wave device.
For example, the electronic device 20 is an inductor. The electronic device 20 is, for example, a capacitor. The electronic device 20 is mounted on the main surface of the wiring substrate 11 by flip-chip bonding technique via the bumps 16. The electronic device 20 is mounted for impedance matching.
The sealing portion 21 covers the elastic wave device 17, the switch 18, the power amplifier 19, and the electronic device 20. The sealing portion 21 hermetically seals the wiring substrate 11 together with the elastic wave device 17, the switch 18, the power amplifier 19, and the electronic device 20. The sealing portion 21 is formed of an insulator such as a synthetic resin, for example. The seal portion 21 is formed of metal, for example. For example, the sealing portion 21 is formed of an insulating layer and a metal layer.
In the case where the sealing portion 21 is formed of a synthetic resin, the synthetic resin may be an epoxy resin, a polyimide, or the like. Preferably, the sealing part 21 is formed of an epoxy resin using a low temperature hardening process.
Next, the operation principle of the module 1 including the elastic wave device will be described with reference to fig. 2.
Fig. 2 is an equivalent circuit diagram of module 1 including an elastic wave device according to the first embodiment.
As shown in fig. 2, the module 1 including an elastic wave device includes a transmission terminal Term _ T, a reception terminal Term _ R, and an antenna terminal Term _ ANT.
When the switch 18 is in the first state, the route of the transmission signal of the module 1 including the elastic wave device is turned on. At this time, the transmission signal passes through the transmission terminal Term _ T and then passes through the power amplifier 19. At this time, the transmission signal is amplified. The transmit signal then passes through the switch 18. Then, the transmission signal passes through the elastic wave device 17. Then, the transmission signal passes through the antenna terminal Term _ ANT.
When the switch 18 is in the second state, the route of the reception signal of the module 1 including the elastic wave device is turned on. At this time, the reception signal passes through the elastic wave device 17 after passing through the antenna terminal Term _ ANT. The received signal then passes through the switch 18. Then, the reception signal passes through the reception terminal Term _ R.
Next, the main part of the module 1 including the elastic wave device will be described with reference to fig. 3.
Fig. 3 is a plan view of a main part of the module 1 including an elastic wave device of the first embodiment.
As shown in fig. 3, the first metal pattern 12 and the second metal pattern 13 have a concavo-convex portion or a saw-toothed portion. Although not shown in the drawings, the sealing portion 21 is bonded to the first metal pattern 12, the second metal pattern 13, and the exposed portion of the wiring substrate 11.
In fig. 3, a first electronic device 20a is provided on the lower right side on the wiring substrate 11. The second electronic device 20b is disposed on the upper right side on the wiring substrate 11. The second electronic device 20b is disposed at a position farther from the right edge of the wiring substrate 11 than the first electronic device 20 a.
In the region a where the first electronic device 20a is adjacent to the right edge of the wiring substrate 11, the area where the sealing portion 21 is connected to the exposed portion of the wiring substrate 11 is larger than the area where the sealing portion 21 is joined to the first metal pattern 12.
In the region B where the second electronic device 20B is adjacent to the right edge of the wiring substrate 11, the area where the sealing portion 21 is connected to the exposed portion of the wiring substrate 11 is smaller than the area where the sealing portion 21 is joined to the first metal pattern 12.
The wiring pattern 15 is appropriately sandwiched in the metal pattern.
For example, in the region C, the wiring pattern 15 is sandwiched by the first metal pattern 12 and the second metal pattern 13. Specifically, the wiring pattern 15 is closer to the center of the wiring substrate 11 than the first metal pattern 12, and is adjacent to the first metal pattern 12. The second metal pattern 13 is located closer to the center of the wiring substrate 11 than the wiring pattern 15 and adjacent to the wiring pattern 15.
For example, in the region D, the wiring pattern 15 is sandwiched by the first metal patterns 12. Specifically, the wiring pattern 15 is appropriately provided in the concave portion of the first metal pattern 12.
For example, in the region E, the wiring pattern 15 is sandwiched by the same second metal pattern 13. Specifically, the wiring pattern 15 is appropriately provided in the concave portion of the second metal pattern 13.
For example, in the region F, the wiring pattern 15 is sandwiched by the different second metal patterns 13. Specifically, one of the second metal patterns 13 abuts on one side of the wiring pattern 15. The other of the second metal patterns 13 abuts the other side of the wiring pattern 15.
Next, the wiring board 11 will be described with reference to fig. 4 to 7.
Fig. 4 is a plan view of a first layer of a wiring substrate of a module including an elastic wave device of the first embodiment. Fig. 5 is a plan view of a second layer of the wiring substrate of the module including an elastic wave device of the first embodiment. Fig. 6 is a plan view of third layer 143 of the wiring substrate of the module including an elastic wave device according to the first embodiment. Fig. 7 is a plan view of a fourth layer of the wiring substrate of the module including an elastic wave device according to the first embodiment.
The first layer 141 in fig. 4 is a layer having a surface forming the main surface of the wiring substrate 11. As shown in fig. 4, the first layer 141 has a plurality of first-layer through holes 141a. In the first layer 141, the first metal pattern 12 and the second metal pattern 13 are not electrically connected.
The second layer 142 of fig. 5 is a layer connected to the back surface of the first layer 141. As shown in fig. 5, the second layer 142 includes a second-layer metal pattern 142a, a plurality of second-layer wiring patterns 142b, and a plurality of second-layer through holes 142c.
The third layer 143 of fig. 6 is a layer connected to the back surface of the second layer 142. As shown in fig. 6, the third layer 143 has a metal pattern 143a for the third layer, a plurality of wiring patterns 143b for the third layer, and a plurality of through holes 143c for the third layer.
The fourth layer 144 of fig. 7 is a layer connected to the back surface of the third layer 143. The fourth layer 144 is a layer formed on the opposite side of the main surface of the wiring substrate 11. As shown in fig. 7, the fourth layer 144 includes a fourth-layer metal pattern 144a and a plurality of external connection terminals 131.
After the first layer 141 to the fourth layer 144 are laminated, a desired electrical connection can be ensured. For example, the first metal pattern 12 and the second metal pattern 13 are electrically connected to the second layer metal pattern 142a through a via hole of the first layer 141 having a ground potential. Therefore, the first metal pattern 12 and the second metal pattern 13 are at the ground potential.
Next, a first example of the elastic wave device will be described with reference to fig. 8.
Fig. 8 shows a first example of an acoustic wave device mounted on the module including an acoustic wave device according to the first embodiment.
The example of fig. 8 is an example in which the acoustic wave device is a surface acoustic wave resonator. As shown in fig. 8, an IDT (inter digital Transducer) 22a and a pair of reflectors 22b are formed on the main surface of the chip substrate. One of the reflectors 22b is adjacent to one side of the IDT 22 a. The other of the reflectors 22b is adjacent to the other side of the IDT 22 a. The IDT 22a and the reflectors 22b can excite surface acoustic waves.
For example, the IDT 22a and the reflectors 22b are formed of an alloy of aluminum and copper. For example, the IDT 22a and the reflectors 22b are formed of a suitable metal such as titanium, palladium, or silver, or an alloy thereof. For example, the IDT 22a and the reflectors 22b are formed of a laminated metal film in which a plurality of metal layers are laminated. For example, the thickness of the IDT 22a and the reflectors 22b is, for example, 150nm to 400nm.
The IDT 22a has a pair of comb electrodes 22c. The comb electrodes 22c are opposed to each other. Each comb electrode 22c has a plurality of electrode fingers 22d and bus bars 22e. The electrode fingers 22d extend in the longitudinal direction. The bus bar 22e connects the electrode fingers 22d.
Next, a second example of the acoustic wave device will be described with reference to fig. 9.
Fig. 9 is a second example of an elastic wave device mounted on the module including an elastic wave device in the first example.
In the example of fig. 9, the elastic wave element is exemplified by a film bulk acoustic wave resonator. In fig. 9, the chip substrate 60 is a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass.
The piezoelectric film 62 is disposed on the chip substrate 60. The piezoelectric film 62 is formed of, for example, aluminum nitride.
The piezoelectric film 62 is sandwiched by a lower electrode 64 and an upper electrode 66. For example, the lower electrode 64 and the upper electrode 66 are formed of a metal such as ruthenium.
A gap 68 is formed between the lower electrode 64 and the chip substrate 60.
In the film bulk acoustic resonator, the lower electrode 64 and the upper electrode 66 excite an elastic wave in a thickness longitudinal vibration mode in the piezoelectric film 62.
According to the first embodiment, the first metal pattern 12 has a structured portion, for example, a concavo-convex shaped portion, preferably a saw-toothed portion. The sealing portion 21 connects the exposed portion of the wiring substrate 11 and the first metal pattern 12. The boundary of the region where the first metal pattern 12 and the seal part 21 are connected becomes long, and the seal part 21 penetrates into the concave part of the first metal pattern 12 in the concave-convex shaped part, preferably, into the valley part of the first metal pattern 12 in the indented part. Therefore, an anchor effect can be obtained, and the adhesion of the sealing portion 21 to the wiring substrate 11 can be improved.
Also, the first metal pattern 12 is formed inward from the end of the wiring substrate 11 by about 15 μm. Therefore, the adhesion between the sealing portion 21 and the end portion of the wiring substrate 11 can be improved.
In the region a where the first electronic device 20a is adjacent to the edge of the wiring substrate 11, the area of the sealing portion 21 connected to the exposed portion of the wiring substrate 11 is larger than the area of the sealing portion 21 bonded to the first metal pattern 12. In a region B where the second electronic device 20B is adjacent to the edge region of the wiring substrate 11, an area of the sealing portion 21 connected to the exposed portion of the wiring substrate 11 is smaller than an area of the sealing portion 21 bonded to the first metal pattern 12. Therefore, the sealing portion 21 adheres to the exposed portion of the wiring substrate 11 in the vicinity of the first electronic device 20a near the edge portion of the wiring substrate 11, and the adhesion between the sealing portion 21 and the wiring substrate 11 can be reliably improved. In addition, in the region of the edge portion of the wiring substrate 11 close to the second electronic device 20b, the sealing portion 21 is attached to not only the exposed portion of the wiring substrate 11 but also the region of the first metal pattern 12 having a constant area is joined to the sealing portion 21, so that the adhesion between the sealing portion 21 and the wiring substrate 11 can be reliably improved.
The second metal pattern 13 has a structured portion, for example, a concavo-convex portion, preferably a saw-toothed portion. The sealing portion 21 connects the exposed portion of the wiring substrate 11 and the second metal pattern 13. The boundary of the region where the second metal pattern 13 and the seal portion 21 are connected becomes long, and the seal portion 21 penetrates into the recessed portion of the second metal pattern 13 in the concave-convex portion, preferably, the valley portion of the second metal pattern 13 in the serrated portion. Therefore, an anchor effect can be obtained, and the adhesion of the sealing portion 21 to the wiring substrate 11 can be improved.
The first metal pattern 12 and the second metal pattern 13 improve heat conduction between the wiring substrate 11 and the sealing portion 21. Therefore, the heat dissipation of the module 1 including the acoustic wave device is improved.
The first metal pattern 12 is electrically connected to the electrode pad 14 having a ground potential. Therefore, grounding can be strengthened. Also, the first metal pattern 12 may be electrically connected to at least one of the electrode pads 14 having a ground potential.
The wiring pattern 15 is located closer to the center of the wiring substrate 11 than the first metal pattern 12 and adjacent to the first metal pattern 12. The second metal pattern 13 is closer to the center of the wiring substrate 11 than the wiring pattern 15 and abuts the wiring pattern 15. Therefore, a decrease in coupling of the wiring pattern 15 to the ground can be suppressed. Therefore, deterioration of the characteristics of the module 1 including the elastic wave device can be suppressed.
Here, when the first metal pattern 12 or the second metal pattern 13 is close to the wiring pattern 15, a parasitic capacitance is generated between a metal wiring and the wiring pattern 15. For example, when the distance between the metal pattern and the wiring pattern 15 is fixed, a certain parasitic capacitance is generated. In this case, if the metal pattern has a structured portion such as a concave-convex portion, the distance between the metal pattern and the wiring pattern 15 can be adjusted. Therefore, the metal pattern can enhance the heat dissipation effect as much as possible, and the problem of parasitic capacitance between the metal pattern and the wiring pattern 15 can be eliminated.
The sealing portion 21 is made of synthetic resin. Therefore, the adhesion of the sealing portion 21 to the exposed portion of the wiring substrate 11 can be particularly improved.
The elastic wave device 17 is a filter using a surface acoustic wave resonator. Therefore, the module 1 including the elastic wave device that allows an electric signal of a desired frequency band to pass therethrough can be obtained.
The elastic wave device 17 is a filter using an acoustic thin film resonator. Therefore, the module 1 including the elastic wave device that can pass the electric signal of the desired frequency band can be obtained.
The elastic wave device 17 is a time division duplex filter. In the elastic wave device 17, the switch 18 can switch between transmission and reception signals. In the elastic wave device 17, a signal amplified by the power amplifier 19 may be transmitted. In the module 1 including an elastic wave device, it is possible to appropriately output a transmission signal as well as to switch between the transmission signal and the reception signal.
In addition, elastic wave device 17 may be a duplexer in which two elastic wave device chips are installed, a band pass filter in which one elastic wave device chip is installed, or a quadplexer in which four elastic wave device chips are installed.
In the acoustic wave device 17, the acoustic wave device chip may be directly mounted on the wiring board 11.
While at least one embodiment has been described above, it is to be appreciated various alterations, modifications, and improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the invention.
It is to be understood that the aspects of the method or apparatus described herein are not limited in their application to the details of construction and the arrangements of the components set forth in the above description or illustrated in the drawings. The methods and apparatus may be practiced in other embodiments or may be practiced in other embodiments.
The examples are given by way of illustration only and not by way of limitation.
The description or words used in this disclosure are words of description rather than limitation. The use of "including," "comprising," "having," "containing," and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.
The use of "or any use of the term" or "to describe a term can be interpreted to mean one, more than one, or all of the described terms.
Front, back, left, right, top, bottom, up, down, and horizontal and vertical references are for convenience of description and do not limit the position and spatial configuration of any of the components of the present invention. Accordingly, the foregoing description and drawings are by way of example only.
Claims (10)
1. A module including an elastic wave device, comprising:
a wiring substrate;
an elastic wave device mounted on the wiring substrate;
a first metal pattern formed on an outer edge portion on the wiring substrate; and
a sealing section for hermetically sealing the elastic wave device;
the method is characterized in that: the first metal pattern has a structured portion, and the sealing portion is joined to the exposed portion of the wiring substrate and the first metal pattern.
2. The module including an elastic wave device according to claim 1, characterized in that: the module including an elastic wave device further includes:
a first electronic device mounted on the wiring substrate and different from the elastic wave device; and
a second electronic device mounted on the wiring substrate and disposed at a position farther from an outer edge of the wiring substrate than the first electronic device;
in a region of the structured portion where the first electronic device is connected to the outer edge of the wiring substrate, an area where the sealing portion is joined to the exposed portion of the wiring substrate is larger than an area where the sealing portion is joined to the first metal pattern, and in a region of the structured portion where the second electronic device is connected to the outer edge of the wiring substrate, an area where the sealing portion is joined to the exposed portion of the wiring substrate is smaller than an area where the sealing portion is joined to the first metal pattern.
3. The module containing an elastic wave device according to claim 1 or 2, characterized in that: the module including the elastic wave device further includes a plurality of electrode pads electrically connected to the elastic wave device, at least one of the electrode pads is at a ground potential, and the electrode pad at the ground potential is electrically connected to the first metal pattern.
4. The module including an elastic wave device according to claim 3, characterized in that: the module including an elastic wave device further includes:
a wiring pattern which is closer to the center of the wiring substrate than the first metal pattern, is adjacent to the first metal pattern, is formed on the wiring substrate, and is through which a signal can flow; and
a second metal pattern closer to the center of the wiring substrate than the wiring pattern, adjacent to the wiring pattern and formed on the wiring substrate, having a structured portion, and serving as a ground potential.
5. The module including an elastic wave device according to claim 1, characterized in that: the structured portion of the first metal pattern is a concavo-convex shape.
6. The module including an elastic wave device according to claim 1, characterized in that: the structured portion of the first metal pattern is in a zigzag shape.
7. The module including an elastic wave device according to claim 1, characterized in that: the sealing portion is formed of synthetic resin.
8. The module including an elastic wave device according to claim 1, characterized in that: the elastic wave device is a filter using a surface acoustic wave resonator.
9. The module including an elastic wave device according to claim 1, characterized in that: the elastic wave device is a filter using a film bulk acoustic wave resonator.
10. The module including an elastic wave device according to claim 1, characterized in that: the module including the elastic wave device further includes a switch mounted on the wiring substrate, and a power amplifier mounted on the wiring substrate, and the elastic wave device is a time division duplex filter capable of switching between a transmission signal and a reception signal by the switch and transmitting a signal amplified by the power amplifier.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021159868A JP7361343B2 (en) | 2021-09-29 | 2021-09-29 | module |
| JP2021-159868 | 2021-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115882810A true CN115882810A (en) | 2023-03-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211155167.6A Pending CN115882810A (en) | 2021-09-29 | 2022-09-22 | Module comprising an elastic wave device |
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|---|---|
| JP (1) | JP7361343B2 (en) |
| CN (1) | CN115882810A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6453563B2 (en) | 2014-06-25 | 2019-01-16 | 京セラ株式会社 | Elastic wave device and communication device |
| JP6536539B2 (en) | 2016-03-31 | 2019-07-03 | Tdk株式会社 | Electronic circuit package using composite magnetic sealing material |
-
2021
- 2021-09-29 JP JP2021159868A patent/JP7361343B2/en active Active
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- 2022-09-22 CN CN202211155167.6A patent/CN115882810A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023049867A (en) | 2023-04-10 |
| JP7361343B2 (en) | 2023-10-16 |
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