KR100887439B1 - 전자 장치용 기판 및 그 처리 방법 - Google Patents
전자 장치용 기판 및 그 처리 방법 Download PDFInfo
- Publication number
- KR100887439B1 KR100887439B1 KR1020067023454A KR20067023454A KR100887439B1 KR 100887439 B1 KR100887439 B1 KR 100887439B1 KR 1020067023454 A KR1020067023454 A KR 1020067023454A KR 20067023454 A KR20067023454 A KR 20067023454A KR 100887439 B1 KR100887439 B1 KR 100887439B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- substrate
- gas
- plasma
- fluorine atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004141022 | 2004-05-11 | ||
JPJP-P-2004-00141022 | 2004-05-11 | ||
PCT/JP2005/008506 WO2005109483A1 (ja) | 2004-05-11 | 2005-05-10 | 電子装置用基板およびその処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070011463A KR20070011463A (ko) | 2007-01-24 |
KR100887439B1 true KR100887439B1 (ko) | 2009-03-10 |
Family
ID=35320470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067023454A Expired - Fee Related KR100887439B1 (ko) | 2004-05-11 | 2005-05-10 | 전자 장치용 기판 및 그 처리 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4555143B2 (enrdf_load_stackoverflow) |
KR (1) | KR100887439B1 (enrdf_load_stackoverflow) |
CN (1) | CN100485884C (enrdf_load_stackoverflow) |
WO (1) | WO2005109483A1 (enrdf_load_stackoverflow) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101185757B1 (ko) * | 2005-06-20 | 2012-09-25 | 고에키자이단호진 고쿠사이카가쿠 신고우자이단 | 층간 절연막 및 배선 구조와 그것들의 제조 방법 |
JP5119606B2 (ja) * | 2006-03-31 | 2013-01-16 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5194393B2 (ja) * | 2006-06-23 | 2013-05-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP2008270706A (ja) * | 2007-03-26 | 2008-11-06 | Tokyo Electron Ltd | 窒化珪素膜および不揮発性半導体メモリ装置 |
JPWO2008117798A1 (ja) * | 2007-03-26 | 2010-07-15 | 東京エレクトロン株式会社 | 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 |
US8021975B2 (en) * | 2007-07-24 | 2011-09-20 | Tokyo Electron Limited | Plasma processing method for forming a film and an electronic component manufactured by the method |
US8197913B2 (en) * | 2007-07-25 | 2012-06-12 | Tokyo Electron Limited | Film forming method for a semiconductor |
JP2009088267A (ja) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 成膜方法、成膜装置、記憶媒体及び半導体装置 |
TW201044462A (en) | 2009-01-22 | 2010-12-16 | Tokyo Electron Ltd | A method for manufacturing semiconductor devices |
JP5600885B2 (ja) * | 2009-03-19 | 2014-10-08 | 凸版印刷株式会社 | 有機el用乾燥装置 |
JP5304759B2 (ja) * | 2010-09-15 | 2013-10-02 | 東京エレクトロン株式会社 | 成膜方法及び半導体装置 |
JP5700513B2 (ja) * | 2010-10-08 | 2015-04-15 | 国立大学法人東北大学 | 半導体装置の製造方法および半導体装置 |
JP2012164922A (ja) * | 2011-02-09 | 2012-08-30 | Yuutekku:Kk | 圧電体の製造方法、圧電体及び電子装置 |
JP5364765B2 (ja) * | 2011-09-07 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6559087B2 (ja) * | 2016-03-31 | 2019-08-14 | 東京エレクトロン株式会社 | 基板処理装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144677A (ja) * | 1996-11-14 | 1998-05-29 | Tokyo Electron Ltd | 半導体装置及びその製造方法 |
JPH11154672A (ja) * | 1997-11-20 | 1999-06-08 | Tokyo Electron Ltd | プラズマ処理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3469761B2 (ja) * | 1997-10-30 | 2003-11-25 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法 |
JP4355039B2 (ja) * | 1998-05-07 | 2009-10-28 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP3921917B2 (ja) * | 2000-03-31 | 2007-05-30 | セイコーエプソン株式会社 | 微細構造体の製造方法 |
WO2002058130A1 (en) * | 2001-01-22 | 2002-07-25 | Tokyo Electron Limited | Method for producing material of electronic device |
JP4413556B2 (ja) * | 2003-08-15 | 2010-02-10 | 東京エレクトロン株式会社 | 成膜方法、半導体装置の製造方法 |
JP4194521B2 (ja) * | 2004-04-07 | 2008-12-10 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-04-28 JP JP2005130914A patent/JP4555143B2/ja not_active Expired - Fee Related
- 2005-05-10 KR KR1020067023454A patent/KR100887439B1/ko not_active Expired - Fee Related
- 2005-05-10 CN CNB2005800110299A patent/CN100485884C/zh not_active Expired - Fee Related
- 2005-05-10 WO PCT/JP2005/008506 patent/WO2005109483A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144677A (ja) * | 1996-11-14 | 1998-05-29 | Tokyo Electron Ltd | 半導体装置及びその製造方法 |
JPH11154672A (ja) * | 1997-11-20 | 1999-06-08 | Tokyo Electron Ltd | プラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100485884C (zh) | 2009-05-06 |
JP2005354041A (ja) | 2005-12-22 |
WO2005109483A1 (ja) | 2005-11-17 |
CN1943021A (zh) | 2007-04-04 |
JP4555143B2 (ja) | 2010-09-29 |
KR20070011463A (ko) | 2007-01-24 |
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