KR100883718B1 - 광 센서 - Google Patents

광 센서 Download PDF

Info

Publication number
KR100883718B1
KR100883718B1 KR1020020022234A KR20020022234A KR100883718B1 KR 100883718 B1 KR100883718 B1 KR 100883718B1 KR 1020020022234 A KR1020020022234 A KR 1020020022234A KR 20020022234 A KR20020022234 A KR 20020022234A KR 100883718 B1 KR100883718 B1 KR 100883718B1
Authority
KR
South Korea
Prior art keywords
optical sensor
semiconductor substrate
pixel
stripe
diffusion region
Prior art date
Application number
KR1020020022234A
Other languages
English (en)
Korean (ko)
Other versions
KR20020082155A (ko
Inventor
오미도시히코
Original Assignee
세이코 인스트루 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 인스트루 가부시키가이샤 filed Critical 세이코 인스트루 가부시키가이샤
Publication of KR20020082155A publication Critical patent/KR20020082155A/ko
Application granted granted Critical
Publication of KR100883718B1 publication Critical patent/KR100883718B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020020022234A 2001-04-23 2002-04-23 광 센서 KR100883718B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001124854A JP4527311B2 (ja) 2001-04-23 2001-04-23 光センサ及びその検査方法
JPJP-P-2001-00124854 2001-04-23

Publications (2)

Publication Number Publication Date
KR20020082155A KR20020082155A (ko) 2002-10-30
KR100883718B1 true KR100883718B1 (ko) 2009-02-12

Family

ID=18974167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020022234A KR100883718B1 (ko) 2001-04-23 2002-04-23 광 센서

Country Status (3)

Country Link
JP (1) JP4527311B2 (ja)
KR (1) KR100883718B1 (ja)
TW (1) TW541707B (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113287A (ja) * 1984-11-08 1986-05-31 Sharp Corp 光検出素子
KR920005393A (ko) * 1990-08-13 1992-03-28 문정환 N-/p구조의 포토검출기 제조방법
JPH08139302A (ja) * 1994-11-14 1996-05-31 Sharp Corp 光半導体ウェハおよび光半導体受光素子の製造方法
JPH09298308A (ja) * 1996-04-30 1997-11-18 Sharp Corp 受光素子及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01189933A (ja) * 1988-01-26 1989-07-31 Seiko Instr & Electron Ltd 半導体装置の製造方法
JPH0231154U (ja) * 1988-08-20 1990-02-27
JPH02291180A (ja) * 1989-04-28 1990-11-30 Shimadzu Corp フォトダイオード
JPH031448U (ja) * 1989-05-19 1991-01-09
JPH05343730A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 半導体受光素子
JP3135418B2 (ja) * 1992-06-25 2001-02-13 セイコーインスツルメンツ株式会社 半導体装置及びその製造方法
JP3503410B2 (ja) * 1997-04-10 2004-03-08 株式会社デンソー 光センサの調整方法および光センサの調整装置
JP2000252237A (ja) * 1999-02-26 2000-09-14 Rohm Co Ltd 半導体センサ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113287A (ja) * 1984-11-08 1986-05-31 Sharp Corp 光検出素子
KR920005393A (ko) * 1990-08-13 1992-03-28 문정환 N-/p구조의 포토검출기 제조방법
JPH08139302A (ja) * 1994-11-14 1996-05-31 Sharp Corp 光半導体ウェハおよび光半導体受光素子の製造方法
JPH09298308A (ja) * 1996-04-30 1997-11-18 Sharp Corp 受光素子及びその製造方法

Also Published As

Publication number Publication date
JP2002319697A (ja) 2002-10-31
KR20020082155A (ko) 2002-10-30
TW541707B (en) 2003-07-11
JP4527311B2 (ja) 2010-08-18

Similar Documents

Publication Publication Date Title
EP2030240B1 (en) Pmos pixel structure with low cross talk
US6417023B2 (en) Method for producing solid-state image-sensing device
RU2488190C1 (ru) Твердотельный датчик изображения, способ его производства и система формирования изображения
US7920192B2 (en) Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate
JP3584196B2 (ja) 受光素子及びそれを有する光電変換装置
JP5165588B2 (ja) 可視光を検出するために最適化された半導体放射線検出器
KR100312279B1 (ko) 광전변환장치및이미지센서
JP2009065118A (ja) 固体撮像装置
KR20100070291A (ko) 고체 촬상 장치, 그 제조 방법, 및 전자 정보 기기
US6656760B2 (en) Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor
US7564083B2 (en) Active pixel sensor
JP4241527B2 (ja) 光電変換素子
JP4763242B2 (ja) 固体撮像素子およびその製造方法
JP4868815B2 (ja) 固体撮像装置およびその製造方法、電子情報機器
KR100883718B1 (ko) 광 센서
JP5495524B2 (ja) 光電変換装置
US7575941B2 (en) Method of manufacturing photodiode
JP2018067615A (ja) 固体撮像装置及びその製造方法、並びに、電子機器
US6759700B2 (en) Optical sensor and manufacturing method of the same
Kang The Simulation of the Crosstalk between Photodiodes Fabricated Using 0.18 CMOS Process
US20060022230A1 (en) Solid-state image sensing device and method for manufacturing the same
CN115692438A (zh) 图像感测装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
J201 Request for trial against refusal decision
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130117

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20140121

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20150116

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20160119

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20170119

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20180119

Year of fee payment: 10