KR100882986B1 - 이미지센서 및 그 제조방법 - Google Patents
이미지센서 및 그 제조방법 Download PDFInfo
- Publication number
- KR100882986B1 KR100882986B1 KR1020080053848A KR20080053848A KR100882986B1 KR 100882986 B1 KR100882986 B1 KR 100882986B1 KR 1020080053848 A KR1020080053848 A KR 1020080053848A KR 20080053848 A KR20080053848 A KR 20080053848A KR 100882986 B1 KR100882986 B1 KR 100882986B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- substrate
- conductivity type
- transistor
- ion implantation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000005468 ion implantation Methods 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 41
- 230000035945 sensitivity Effects 0.000 description 11
- 239000002184 metal Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008046035A DE102008046035A1 (de) | 2007-09-07 | 2008-09-05 | Bildsensor und Verfahren zu seiner Herstellung |
| TW097134291A TW200913241A (en) | 2007-09-07 | 2008-09-05 | Image sensor and method for manufacturing the same |
| JP2008228901A JP2009065166A (ja) | 2007-09-07 | 2008-09-05 | イメージセンサ及びその製造方法 |
| US12/204,919 US20090066822A1 (en) | 2007-09-07 | 2008-09-05 | Image Sensor and Method for Manufacturing the Same |
| CN2008102138218A CN101383363B (zh) | 2007-09-07 | 2008-09-08 | 图像传感器及其制造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070090833 | 2007-09-07 | ||
| KR20070090833 | 2007-09-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100882986B1 true KR100882986B1 (ko) | 2009-02-12 |
Family
ID=40463083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080053848A KR100882986B1 (ko) | 2007-09-07 | 2008-06-09 | 이미지센서 및 그 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100882986B1 (zh) |
| CN (1) | CN101383363B (zh) |
| TW (1) | TW200913241A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020026043A (ko) * | 2000-09-30 | 2002-04-06 | 박용 | 씨모스 이미지 센서 |
| KR20050038026A (ko) * | 2002-08-23 | 2005-04-25 | 마이크론 테크놀로지, 인크 | 저 암전류 포토다이오드를 구비한 화소 센서 |
| KR20070065221A (ko) * | 2005-12-19 | 2007-06-22 | 가부시끼가이샤 도시바 | 고체 촬상 장치 |
| KR20070082561A (ko) * | 2006-02-15 | 2007-08-21 | 소니 가부시끼 가이샤 | 고체촬상장치, 그 구동방법, 카메라, 전하전송장치, 부하를구동하기 위한 구동방법 및 구동장치와 전자기기 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6798033B2 (en) * | 2002-08-27 | 2004-09-28 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
| US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
| KR100775058B1 (ko) * | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
-
2008
- 2008-06-09 KR KR1020080053848A patent/KR100882986B1/ko not_active IP Right Cessation
- 2008-09-05 TW TW097134291A patent/TW200913241A/zh unknown
- 2008-09-08 CN CN2008102138218A patent/CN101383363B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020026043A (ko) * | 2000-09-30 | 2002-04-06 | 박용 | 씨모스 이미지 센서 |
| KR20050038026A (ko) * | 2002-08-23 | 2005-04-25 | 마이크론 테크놀로지, 인크 | 저 암전류 포토다이오드를 구비한 화소 센서 |
| KR20070065221A (ko) * | 2005-12-19 | 2007-06-22 | 가부시끼가이샤 도시바 | 고체 촬상 장치 |
| KR20070082561A (ko) * | 2006-02-15 | 2007-08-21 | 소니 가부시끼 가이샤 | 고체촬상장치, 그 구동방법, 카메라, 전하전송장치, 부하를구동하기 위한 구동방법 및 구동장치와 전자기기 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101383363A (zh) | 2009-03-11 |
| TW200913241A (en) | 2009-03-16 |
| CN101383363B (zh) | 2010-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009065162A (ja) | イメージセンサ及びその製造方法 | |
| KR100922921B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100922924B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100898473B1 (ko) | 이미지센서 | |
| US20090066822A1 (en) | Image Sensor and Method for Manufacturing the Same | |
| KR100922929B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101033353B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100997328B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101024815B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101024756B1 (ko) | 이미지 센서 및 이미지 센서의 제조 방법 | |
| KR101053773B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101046051B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100922922B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR20100069940A (ko) | 이미지센서 및 그 제조방법 | |
| KR101135791B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100882986B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR20100077564A (ko) | 이미지센서 및 그 제조방법 | |
| KR101025066B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR100898472B1 (ko) | 이미지센서의 제조방법 | |
| KR101038886B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101063728B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101163817B1 (ko) | 이미지 센서 및 그 제조 방법 | |
| KR101002104B1 (ko) | 이미지센서 및 그 제조방법 | |
| KR101024711B1 (ko) | 이미지 센서 및 이미지 센서의 제조 방법 | |
| KR101024722B1 (ko) | 이미지 센서 및 이미지 센서의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| A302 | Request for accelerated examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120119 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |