KR100876692B1 - 기판처리장치 - Google Patents

기판처리장치 Download PDF

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Publication number
KR100876692B1
KR100876692B1 KR1020067015082A KR20067015082A KR100876692B1 KR 100876692 B1 KR100876692 B1 KR 100876692B1 KR 1020067015082 A KR1020067015082 A KR 1020067015082A KR 20067015082 A KR20067015082 A KR 20067015082A KR 100876692 B1 KR100876692 B1 KR 100876692B1
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KR
South Korea
Prior art keywords
mist
temperature
gas
processing apparatus
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067015082A
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English (en)
Korean (ko)
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KR20060129318A (ko
Inventor
도시히사 노자와
오사무 모리타
다마키 유아사
고지 고타니
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
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Publication of KR20060129318A publication Critical patent/KR20060129318A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020067015082A 2004-01-09 2004-12-24 기판처리장치 Expired - Fee Related KR100876692B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00004483 2004-01-09
JP2004004483A JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置
PCT/JP2004/019418 WO2005067023A1 (ja) 2004-01-09 2004-12-24 基板処理装置

Publications (2)

Publication Number Publication Date
KR20060129318A KR20060129318A (ko) 2006-12-15
KR100876692B1 true KR100876692B1 (ko) 2008-12-31

Family

ID=34747122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067015082A Expired - Fee Related KR100876692B1 (ko) 2004-01-09 2004-12-24 기판처리장치

Country Status (5)

Country Link
US (1) US20070163502A1 (https=)
JP (1) JP4361811B2 (https=)
KR (1) KR100876692B1 (https=)
CN (1) CN100440451C (https=)
WO (1) WO2005067023A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597847B2 (ja) * 2005-11-28 2010-12-15 株式会社フジクラ 成膜装置
JP5337482B2 (ja) 2006-05-09 2013-11-06 株式会社アルバック 薄膜製造装置
US20080006044A1 (en) * 2006-07-10 2008-01-10 Ziming Tan Method for controlling temperature
JPWO2008120445A1 (ja) * 2007-03-29 2010-07-15 新明和工業株式会社 センサの取付構造及び真空成膜装置
JP5444218B2 (ja) * 2008-07-04 2014-03-19 東京エレクトロン株式会社 プラズマ処理装置および誘電体窓の温度調節機構
DE112010001483T5 (de) * 2009-04-03 2012-09-13 Tokyo Electron Limited Abscheidungskopf und Filmbildungsvorrichtung
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5947023B2 (ja) * 2011-11-14 2016-07-06 東京エレクトロン株式会社 温度制御装置、プラズマ処理装置、処理装置及び温度制御方法
WO2013083204A1 (en) * 2011-12-09 2013-06-13 Applied Materials, Inc. Heat exchanger for cooling a heating tube and method thereof
WO2013141371A1 (ja) * 2012-03-22 2013-09-26 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
JP2013243218A (ja) 2012-05-18 2013-12-05 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
KR102102003B1 (ko) * 2012-05-25 2020-04-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 플라즈마 처리 방법
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10150184B2 (en) * 2015-10-21 2018-12-11 Siemens Energy, Inc. Method of forming a cladding layer having an integral channel
US11017984B2 (en) 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
JP7306195B2 (ja) 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
JP7514478B2 (ja) * 2020-12-04 2024-07-11 株式会社デンソー ウエハ処理装置及びウエハ処理方法
GB2609624A (en) * 2021-08-06 2023-02-15 Leybold Gmbh Cooling device, method for cooling a cooling element and layer deposition apparatus
CN113659022B (zh) * 2021-08-16 2023-07-21 广东贝尔试验设备有限公司 一种光伏电池划刻加工用电池芯片温度检测装置
WO2025069789A1 (ja) * 2023-09-29 2025-04-03 東京エレクトロン株式会社 基板処理装置及び冷却方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2631165B1 (fr) * 1988-05-05 1992-02-21 Moulene Daniel Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support
JPH0255292A (ja) * 1988-08-19 1990-02-23 Fujitsu Ltd 反応管の冷却方法
US5316579A (en) * 1988-12-27 1994-05-31 Symetrix Corporation Apparatus for forming a thin film with a mist forming means
CA2126731A1 (en) * 1993-07-12 1995-01-13 Frank Jansen Hollow cathode array and method of cleaning sheet stock therewith
EP0827186A3 (en) * 1996-08-29 1999-12-15 Tokyo Electron Limited Substrate treatment system
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
JP4776130B2 (ja) * 1999-11-15 2011-09-21 ラム リサーチ コーポレーション プラズマ処理装置、半導体製造装置、およびこれに用いる加熱・冷却ブロック
JP2001156047A (ja) * 1999-11-30 2001-06-08 Mitsubishi Electric Corp 半導体製造装置
JP2003059884A (ja) * 2001-08-20 2003-02-28 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2003174016A (ja) * 2001-12-07 2003-06-20 Tokyo Electron Ltd 真空処理装置
US6916502B2 (en) * 2002-02-11 2005-07-12 Battelle Energy Alliance, Llc Systems and methods for coating conduit interior surfaces utilizing a thermal spray gun with extension arm
JP4022459B2 (ja) * 2002-09-30 2007-12-19 助川電気工業株式会社 冷却器付加熱装置

Also Published As

Publication number Publication date
US20070163502A1 (en) 2007-07-19
CN1902737A (zh) 2007-01-24
JP4361811B2 (ja) 2009-11-11
KR20060129318A (ko) 2006-12-15
WO2005067023A1 (ja) 2005-07-21
JP2005197600A (ja) 2005-07-21
CN100440451C (zh) 2008-12-03

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