KR100875333B1 - 반도체 제조 장치 및 반도체 제조 방법 - Google Patents

반도체 제조 장치 및 반도체 제조 방법 Download PDF

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Publication number
KR100875333B1
KR100875333B1 KR1020040079758A KR20040079758A KR100875333B1 KR 100875333 B1 KR100875333 B1 KR 100875333B1 KR 1020040079758 A KR1020040079758 A KR 1020040079758A KR 20040079758 A KR20040079758 A KR 20040079758A KR 100875333 B1 KR100875333 B1 KR 100875333B1
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South Korea
Prior art keywords
purge gas
gas
pressure
flow rate
orifice
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Expired - Fee Related
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KR1020040079758A
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English (en)
Korean (ko)
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KR20050033841A (ko
Inventor
오까베즈네유끼
다까도마꼬또
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도쿄엘렉트론가부시키가이샤
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Publication of KR20050033841A publication Critical patent/KR20050033841A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020040079758A 2003-10-08 2004-10-07 반도체 제조 장치 및 반도체 제조 방법 Expired - Fee Related KR100875333B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003349893A JP4235076B2 (ja) 2003-10-08 2003-10-08 半導体製造装置および半導体製造方法
JPJP-P-2003-00349893 2003-10-08

Publications (2)

Publication Number Publication Date
KR20050033841A KR20050033841A (ko) 2005-04-13
KR100875333B1 true KR100875333B1 (ko) 2008-12-22

Family

ID=34509715

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040079758A Expired - Fee Related KR100875333B1 (ko) 2003-10-08 2004-10-07 반도체 제조 장치 및 반도체 제조 방법

Country Status (4)

Country Link
US (1) US20050087299A1 (enrdf_load_stackoverflow)
JP (1) JP4235076B2 (enrdf_load_stackoverflow)
KR (1) KR100875333B1 (enrdf_load_stackoverflow)
TW (1) TW200514142A (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100541050B1 (ko) * 2003-07-22 2006-01-11 삼성전자주식회사 가스공급장치 및 이를 이용한 반도체소자 제조설비
JP4728748B2 (ja) * 2005-09-05 2011-07-20 株式会社東芝 半導体製造装置の清浄化方法
KR100725098B1 (ko) * 2005-11-17 2007-06-04 삼성전자주식회사 반도체 제조설비의 유량조절기 오동작 감지장치 및 그 방법
KR100745372B1 (ko) * 2006-02-06 2007-08-02 삼성전자주식회사 반도체 제조설비의 개스플로우량 감시장치 및 그 방법
KR100806042B1 (ko) * 2006-08-31 2008-02-26 동부일렉트로닉스 주식회사 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법
KR100800377B1 (ko) * 2006-09-07 2008-02-01 삼성전자주식회사 화학기상증착설비
JP4553265B2 (ja) * 2007-03-23 2010-09-29 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US8409352B2 (en) * 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
US9958302B2 (en) 2011-08-20 2018-05-01 Reno Technologies, Inc. Flow control system, method, and apparatus
US9188989B1 (en) 2011-08-20 2015-11-17 Daniel T. Mudd Flow node to deliver process gas using a remote pressure measurement device
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
DE102016205597B4 (de) 2016-04-05 2022-06-23 Fabmatics Gmbh Purge-Messsystem für FOUPs
US10303189B2 (en) 2016-06-30 2019-05-28 Reno Technologies, Inc. Flow control system, method, and apparatus
US11144075B2 (en) 2016-06-30 2021-10-12 Ichor Systems, Inc. Flow control system, method, and apparatus
US10679880B2 (en) 2016-09-27 2020-06-09 Ichor Systems, Inc. Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same
US10838437B2 (en) 2018-02-22 2020-11-17 Ichor Systems, Inc. Apparatus for splitting flow of process gas and method of operating same
US10663337B2 (en) 2016-12-30 2020-05-26 Ichor Systems, Inc. Apparatus for controlling flow and method of calibrating same
JP6971887B2 (ja) * 2018-03-02 2021-11-24 東京エレクトロン株式会社 成膜方法及び成膜装置
CN115210852A (zh) * 2021-02-08 2022-10-18 株式会社日立高新技术 气体供给装置、真空处理装置以及气体供给方法
US11899477B2 (en) 2021-03-03 2024-02-13 Ichor Systems, Inc. Fluid flow control system comprising a manifold assembly
KR102676135B1 (ko) * 2021-03-29 2024-06-19 주식회사 히타치하이테크 가스 공급 제어 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition

Also Published As

Publication number Publication date
KR20050033841A (ko) 2005-04-13
JP4235076B2 (ja) 2009-03-04
TW200514142A (en) 2005-04-16
JP2005116827A (ja) 2005-04-28
TWI373792B (enrdf_load_stackoverflow) 2012-10-01
US20050087299A1 (en) 2005-04-28

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