KR100855541B1 - 기판의 식각 방법 및 장치 - Google Patents

기판의 식각 방법 및 장치 Download PDF

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Publication number
KR100855541B1
KR100855541B1 KR20070009933A KR20070009933A KR100855541B1 KR 100855541 B1 KR100855541 B1 KR 100855541B1 KR 20070009933 A KR20070009933 A KR 20070009933A KR 20070009933 A KR20070009933 A KR 20070009933A KR 100855541 B1 KR100855541 B1 KR 100855541B1
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KR
South Korea
Prior art keywords
substrate
etching
vortex
bath
etchant
Prior art date
Application number
KR20070009933A
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English (en)
Korean (ko)
Other versions
KR20080071708A (ko
Inventor
이기정
Original Assignee
이기정
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이기정 filed Critical 이기정
Priority to KR20070009933A priority Critical patent/KR100855541B1/ko
Priority to PCT/KR2008/000496 priority patent/WO2008093969A1/en
Priority to JP2009548148A priority patent/JP2010517314A/ja
Priority to TW97103685A priority patent/TW200832539A/zh
Publication of KR20080071708A publication Critical patent/KR20080071708A/ko
Application granted granted Critical
Publication of KR100855541B1 publication Critical patent/KR100855541B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Surface Treatment Of Glass (AREA)
KR20070009933A 2007-01-31 2007-01-31 기판의 식각 방법 및 장치 KR100855541B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR20070009933A KR100855541B1 (ko) 2007-01-31 2007-01-31 기판의 식각 방법 및 장치
PCT/KR2008/000496 WO2008093969A1 (en) 2007-01-31 2008-01-28 Method and apparatus for etching a substrate
JP2009548148A JP2010517314A (ja) 2007-01-31 2008-01-28 基板のエッチング方法及び装置
TW97103685A TW200832539A (en) 2007-01-31 2008-01-31 Method and apparatus for etching a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20070009933A KR100855541B1 (ko) 2007-01-31 2007-01-31 기판의 식각 방법 및 장치

Publications (2)

Publication Number Publication Date
KR20080071708A KR20080071708A (ko) 2008-08-05
KR100855541B1 true KR100855541B1 (ko) 2008-09-01

Family

ID=39674233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20070009933A KR100855541B1 (ko) 2007-01-31 2007-01-31 기판의 식각 방법 및 장치

Country Status (4)

Country Link
JP (1) JP2010517314A (ja)
KR (1) KR100855541B1 (ja)
TW (1) TW200832539A (ja)
WO (1) WO2008093969A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101047465B1 (ko) * 2009-10-09 2011-07-07 한국표준과학연구원 경량화가공부를 포함하는 대형광학계의 균일에칭장치 및 그 대형광학계의 균일에칭방법
JP2012046770A (ja) * 2010-08-24 2012-03-08 Sumitomo Bakelite Co Ltd 基板の処理装置および基板の処理方法
WO2014020687A1 (ja) * 2012-07-31 2014-02-06 三洋電機株式会社 太陽電池の製造方法
KR101576286B1 (ko) * 2014-05-30 2015-12-10 서울시립대학교 산학협력단 실리콘 웨이퍼의 이방성 식각 방법 및 그 장치
KR20220039004A (ko) * 2020-09-21 2022-03-29 삼성전자주식회사 디스플레이를 포함하는 전자 장치 및 그 제조 방법
CN112885712B (zh) * 2021-01-21 2022-04-26 长鑫存储技术有限公司 晶圆边缘的清洗方法以及清洗装置
US20240045108A1 (en) * 2021-10-19 2024-02-08 Sang-Ro Lee Wet etching solution composition, wet etching method of glass, and patterned glass by the wet etching method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139373A (ja) * 1995-11-15 1997-05-27 Canon Inc エッチング装置
KR20020048128A (ko) * 2000-12-16 2002-06-22 구본준, 론 위라하디락사 식각장치 및 식각방법
KR20050028276A (ko) * 2003-09-18 2005-03-22 (주)울텍 습식 식각 장치
KR20060054783A (ko) * 2004-11-16 2006-05-23 삼성전자주식회사 반도체 소자 제조용 습식 식각 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155937A (ja) * 1983-02-25 1984-09-05 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH05144798A (ja) * 1991-11-22 1993-06-11 Kawasaki Steel Corp ウエーハのエツチング方法及びエツチング装置
KR20000010825U (ko) * 1998-11-26 2000-06-26 윤종용 웨이퍼 세정 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139373A (ja) * 1995-11-15 1997-05-27 Canon Inc エッチング装置
KR20020048128A (ko) * 2000-12-16 2002-06-22 구본준, 론 위라하디락사 식각장치 및 식각방법
KR20050028276A (ko) * 2003-09-18 2005-03-22 (주)울텍 습식 식각 장치
KR20060054783A (ko) * 2004-11-16 2006-05-23 삼성전자주식회사 반도체 소자 제조용 습식 식각 장치

Also Published As

Publication number Publication date
WO2008093969A1 (en) 2008-08-07
JP2010517314A (ja) 2010-05-20
KR20080071708A (ko) 2008-08-05
TW200832539A (en) 2008-08-01

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