KR100851419B1 - 프로버 및 탐침 접촉 방법 - Google Patents

프로버 및 탐침 접촉 방법 Download PDF

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Publication number
KR100851419B1
KR100851419B1 KR1020070047295A KR20070047295A KR100851419B1 KR 100851419 B1 KR100851419 B1 KR 100851419B1 KR 1020070047295 A KR1020070047295 A KR 1020070047295A KR 20070047295 A KR20070047295 A KR 20070047295A KR 100851419 B1 KR100851419 B1 KR 100851419B1
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South Korea
Prior art keywords
probe
temperature
relative position
electrode
wafer stage
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KR1020070047295A
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English (en)
Korean (ko)
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KR20070111367A (ko
Inventor
다이치 후지타
다카히로 호키다
데츠우오 하타
사토시 모리야마
요시유키 요코야마
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도쿄 세이미츄 코퍼레이션 리미티드
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Publication of KR20070111367A publication Critical patent/KR20070111367A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
KR1020070047295A 2006-05-16 2007-05-15 프로버 및 탐침 접촉 방법 Expired - Fee Related KR100851419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006136133A JP4936788B2 (ja) 2006-05-16 2006-05-16 プローバ及びプローブ接触方法
JPJP-P-2006-00136133 2006-05-16

Publications (2)

Publication Number Publication Date
KR20070111367A KR20070111367A (ko) 2007-11-21
KR100851419B1 true KR100851419B1 (ko) 2008-08-08

Family

ID=38711414

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070047295A Expired - Fee Related KR100851419B1 (ko) 2006-05-16 2007-05-15 프로버 및 탐침 접촉 방법

Country Status (3)

Country Link
US (1) US7405584B2 (https=)
JP (1) JP4936788B2 (https=)
KR (1) KR100851419B1 (https=)

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JPH07105439B2 (ja) 1986-02-19 1995-11-13 三洋電機株式会社 半導体集積回路装置の製造方法
JP4744382B2 (ja) * 2006-07-20 2011-08-10 株式会社東京精密 プローバ及びプローブ接触方法
JP4932618B2 (ja) * 2007-06-29 2012-05-16 東京エレクトロン株式会社 検査方法及びこの方法を記録したプログラム記録媒体
US8497693B2 (en) * 2007-10-10 2013-07-30 Cascade Microtech, Inc. Method for testing a test substrate under defined thermal conditions and thermally conditionable prober
JP5071131B2 (ja) * 2008-01-31 2012-11-14 東京エレクトロン株式会社 プローブ装置
US7977956B2 (en) * 2009-04-28 2011-07-12 Formfactor, Inc. Method and apparatus for probe card alignment in a test system
KR20110020028A (ko) * 2009-08-21 2011-03-02 삼성전자주식회사 다수의 패드들을 포함하는 반도체 장치
KR20120104812A (ko) * 2011-03-14 2012-09-24 삼성전자주식회사 반도체 디바이스 테스트 장치 및 방법
CN102565677A (zh) * 2012-01-19 2012-07-11 嘉兴景焱智能装备技术有限公司 一种芯片的测试方法及其测试装置和该装置的使用方法
WO2014132856A1 (ja) * 2013-02-27 2014-09-04 株式会社東京精密 プローブ装置のアライメント支援装置及びアライメント支援方法
KR102066155B1 (ko) 2013-03-08 2020-01-14 삼성전자주식회사 프로빙 방법, 이를 수행하기 위한 프로브 카드 및 프로브 카드를 포함하는 프로빙 장치
JP5718978B2 (ja) * 2013-05-28 2015-05-13 株式会社東京精密 ウェーハの検査方法
KR102396428B1 (ko) 2014-11-11 2022-05-11 삼성전자주식회사 반도체 테스트 장치 및 방법
US10481177B2 (en) 2014-11-26 2019-11-19 Tokyo Seimitsu Co. Ltd. Wafer inspection method
JP6821910B2 (ja) * 2017-01-20 2021-01-27 株式会社東京精密 プローバ及びプローブ針の接触方法
JP6869123B2 (ja) * 2017-06-23 2021-05-12 東京エレクトロン株式会社 プローブ装置及び針跡転写方法
CN111316110B (zh) * 2017-11-15 2023-07-14 卡普雷斯股份有限公司 用于测试测试样品电气性能的探针和相关的接近探测器
JP7398930B2 (ja) * 2018-11-27 2023-12-15 東京エレクトロン株式会社 検査装置システム
US11262401B2 (en) * 2020-04-22 2022-03-01 Mpi Corporation Wafer probe station
JP7534047B2 (ja) * 2020-12-07 2024-08-14 東京エレクトロン株式会社 検査装置の制御方法及び検査装置
JP7004935B2 (ja) * 2020-12-14 2022-01-21 株式会社東京精密 プローバ及びプローブ針の接触方法
JP7727169B2 (ja) 2021-06-04 2025-08-21 株式会社東京精密 プローバ制御装置、プローバ制御方法、及びプローバ
JP7805121B2 (ja) * 2021-09-28 2026-01-23 エイブリック株式会社 プローバ、プローブ位置補正方法、プローブ位置補正プログラム及び半導体装置の製造方法
CN115274484B (zh) * 2022-08-03 2023-09-29 立川(无锡)半导体设备有限公司 一种晶圆检测装置及其检测方法

Citations (3)

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KR100383009B1 (ko) * 1997-03-07 2003-08-19 동경 엘렉트론 주식회사 반도체 집적 회로의 검사 방법, 검사 장치 및 진공 컨택터 기구
JP2004085259A (ja) * 2002-08-23 2004-03-18 Tokyo Electron Ltd プローブ装置
KR20040096300A (ko) * 2003-05-09 2004-11-16 아남반도체 주식회사 탐침의 정렬제어를 개선시킨 프로버 시스템 및 방법

Family Cites Families (11)

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US6111421A (en) * 1997-10-20 2000-08-29 Tokyo Electron Limited Probe method and apparatus for inspecting an object
JP3424011B2 (ja) * 1997-11-19 2003-07-07 東京エレクトロン株式会社 プローブ方法及びプローブ装置
JPH11163066A (ja) * 1997-11-29 1999-06-18 Tokyo Electron Ltd ウエハ試験装置
JPH11176893A (ja) * 1997-12-15 1999-07-02 Toshiba Corp ウェーハ測定装置
JP2001210683A (ja) 2000-01-25 2001-08-03 Tokyo Seimitsu Co Ltd プローバのチャック機構
JP3902747B2 (ja) 2002-07-01 2007-04-11 株式会社東京精密 プローブ装置
JP4030413B2 (ja) * 2002-11-22 2008-01-09 株式会社東京精密 ウエハプローバ
US7728953B2 (en) * 2004-03-01 2010-06-01 Nikon Corporation Exposure method, exposure system, and substrate processing apparatus
JP4589710B2 (ja) * 2004-12-13 2010-12-01 株式会社日本マイクロニクス プローバ
JP4529135B2 (ja) * 2005-04-11 2010-08-25 富士機械製造株式会社 対回路基板作業システム
JP4744382B2 (ja) * 2006-07-20 2011-08-10 株式会社東京精密 プローバ及びプローブ接触方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100383009B1 (ko) * 1997-03-07 2003-08-19 동경 엘렉트론 주식회사 반도체 집적 회로의 검사 방법, 검사 장치 및 진공 컨택터 기구
JP2004085259A (ja) * 2002-08-23 2004-03-18 Tokyo Electron Ltd プローブ装置
KR20040096300A (ko) * 2003-05-09 2004-11-16 아남반도체 주식회사 탐침의 정렬제어를 개선시킨 프로버 시스템 및 방법

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
공개특 2004-0096300호(2004.11.16)
등록특 10-0383009호(2003.04.23)
일본공개특허 평16-085259호(2004.03.18)

Also Published As

Publication number Publication date
JP2007311389A (ja) 2007-11-29
KR20070111367A (ko) 2007-11-21
US20070268033A1 (en) 2007-11-22
JP4936788B2 (ja) 2012-05-23
US7405584B2 (en) 2008-07-29

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