KR100823302B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100823302B1
KR100823302B1 KR1020070109448A KR20070109448A KR100823302B1 KR 100823302 B1 KR100823302 B1 KR 100823302B1 KR 1020070109448 A KR1020070109448 A KR 1020070109448A KR 20070109448 A KR20070109448 A KR 20070109448A KR 100823302 B1 KR100823302 B1 KR 100823302B1
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KR
South Korea
Prior art keywords
electrode
chamber
plasma processing
processing apparatus
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070109448A
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English (en)
Korean (ko)
Inventor
김성렬
Original Assignee
주식회사 테스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070085561A external-priority patent/KR20080053167A/ko
Application filed by 주식회사 테스 filed Critical 주식회사 테스
Application granted granted Critical
Publication of KR100823302B1 publication Critical patent/KR100823302B1/ko
Priority to US12/113,901 priority Critical patent/US20080202689A1/en
Priority to US12/140,859 priority patent/US20080277064A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
KR1020070109448A 2006-12-08 2007-10-30 플라즈마 처리 장치 Expired - Fee Related KR100823302B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/113,901 US20080202689A1 (en) 2006-12-08 2008-05-01 Plasma processing apparatus
US12/140,859 US20080277064A1 (en) 2006-12-08 2008-06-17 Plasma processing apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020060124763 2006-12-08
KR20060124763 2006-12-08
KR1020070085561 2007-08-24
KR1020070085561A KR20080053167A (ko) 2006-12-08 2007-08-24 플라즈마 처리 장치

Publications (1)

Publication Number Publication Date
KR100823302B1 true KR100823302B1 (ko) 2008-04-17

Family

ID=39496585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070109448A Expired - Fee Related KR100823302B1 (ko) 2006-12-08 2007-10-30 플라즈마 처리 장치

Country Status (3)

Country Link
US (1) US20080135177A1 (https=)
JP (1) JP4757856B2 (https=)
KR (1) KR100823302B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240053462A (ko) * 2022-10-17 2024-04-24 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치

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KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
JP5641556B2 (ja) * 2009-09-30 2014-12-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5782226B2 (ja) * 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5793028B2 (ja) * 2011-09-01 2015-10-14 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
SG11201608771WA (en) * 2014-05-09 2016-11-29 Ev Group E Thallner Gmbh Method and device for plasma treatment of substrates
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati

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US5707485A (en) 1995-12-20 1998-01-13 Micron Technology, Inc. Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch
KR20050058168A (ko) * 2003-12-11 2005-06-16 (주)울텍 실리콘 웨이퍼의 가장자리, 측면, 하부면을 동시에식각하기 위한 플라즈마 식각장치
KR20060009772A (ko) * 2004-07-26 2006-02-01 삼성전자주식회사 내플라즈마성 라이너를 갖는 플라즈마 공정 챔버 및 그를채용한 웨이퍼 엣지 스트리퍼
JP2006278821A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 半導体製造装置、半導体装置の製造方法および半導体製造装置のクリーニング方法

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JP4175456B2 (ja) * 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
KR100465877B1 (ko) * 2002-08-23 2005-01-13 삼성전자주식회사 반도체 식각 장치
JP4222927B2 (ja) * 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム
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KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
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* Cited by examiner, † Cited by third party
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US5707485A (en) 1995-12-20 1998-01-13 Micron Technology, Inc. Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch
KR20050058168A (ko) * 2003-12-11 2005-06-16 (주)울텍 실리콘 웨이퍼의 가장자리, 측면, 하부면을 동시에식각하기 위한 플라즈마 식각장치
KR20060009772A (ko) * 2004-07-26 2006-02-01 삼성전자주식회사 내플라즈마성 라이너를 갖는 플라즈마 공정 챔버 및 그를채용한 웨이퍼 엣지 스트리퍼
JP2006278821A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 半導体製造装置、半導体装置の製造方法および半導体製造装置のクリーニング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240053462A (ko) * 2022-10-17 2024-04-24 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치
KR102820371B1 (ko) * 2022-10-17 2025-06-13 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치

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JP2008147650A (ja) 2008-06-26
US20080135177A1 (en) 2008-06-12
JP4757856B2 (ja) 2011-08-24

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