JP4757856B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4757856B2
JP4757856B2 JP2007308337A JP2007308337A JP4757856B2 JP 4757856 B2 JP4757856 B2 JP 4757856B2 JP 2007308337 A JP2007308337 A JP 2007308337A JP 2007308337 A JP2007308337 A JP 2007308337A JP 4757856 B2 JP4757856 B2 JP 4757856B2
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JP
Japan
Prior art keywords
electrode
chamber
substrate
insulating member
plasma processing
Prior art date
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Expired - Fee Related
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JP2007308337A
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English (en)
Japanese (ja)
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JP2008147650A (ja
JP2008147650A5 (https=
Inventor
ソンリョル キム
Original Assignee
ティーイーエス シーオー エルティディ
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Priority claimed from KR1020070085561A external-priority patent/KR20080053167A/ko
Application filed by ティーイーエス シーオー エルティディ filed Critical ティーイーエス シーオー エルティディ
Publication of JP2008147650A publication Critical patent/JP2008147650A/ja
Publication of JP2008147650A5 publication Critical patent/JP2008147650A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
JP2007308337A 2006-12-08 2007-11-29 プラズマ処理装置 Expired - Fee Related JP4757856B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2006-0124763 2006-12-08
KR20060124763 2006-12-08
KR1020070085561A KR20080053167A (ko) 2006-12-08 2007-08-24 플라즈마 처리 장치
KR10-2007-0085561 2007-08-24

Publications (3)

Publication Number Publication Date
JP2008147650A JP2008147650A (ja) 2008-06-26
JP2008147650A5 JP2008147650A5 (https=) 2008-08-07
JP4757856B2 true JP4757856B2 (ja) 2011-08-24

Family

ID=39496585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007308337A Expired - Fee Related JP4757856B2 (ja) 2006-12-08 2007-11-29 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20080135177A1 (https=)
JP (1) JP4757856B2 (https=)
KR (1) KR100823302B1 (https=)

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
JP5641556B2 (ja) * 2009-09-30 2014-12-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5782226B2 (ja) * 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5793028B2 (ja) * 2011-09-01 2015-10-14 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
SG11201608771WA (en) * 2014-05-09 2016-11-29 Ev Group E Thallner Gmbh Method and device for plasma treatment of substrates
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
KR102820371B1 (ko) * 2022-10-17 2025-06-13 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치

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US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
US5853483A (en) * 1995-05-02 1998-12-29 Dainippon Screen Mfg. Co., Ltd. Substrate spin treating method and apparatus
US5707485A (en) 1995-12-20 1998-01-13 Micron Technology, Inc. Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch
US6345125B2 (en) * 1998-02-25 2002-02-05 Lucent Technologies Inc. Multiple description transform coding using optimal transforms of arbitrary dimension
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
JP2003155569A (ja) * 2001-11-16 2003-05-30 Nec Kagoshima Ltd プラズマｃｖｄ装置及びそのクリーニング方法
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JP4175456B2 (ja) * 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
KR100465877B1 (ko) * 2002-08-23 2005-01-13 삼성전자주식회사 반도체 식각 장치
JP4222927B2 (ja) * 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム
US7615131B2 (en) * 2003-05-12 2009-11-10 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
JP4607517B2 (ja) * 2003-09-03 2011-01-05 東京エレクトロン株式会社 プラズマ処理装置
KR100572131B1 (ko) * 2003-12-11 2006-04-18 (주)울텍 실리콘 웨이퍼의 가장자리, 측면, 하부면을 동시에식각하기 위한 플라즈마 식각장치
KR20060009772A (ko) * 2004-07-26 2006-02-01 삼성전자주식회사 내플라즈마성 라이너를 갖는 플라즈마 공정 챔버 및 그를채용한 웨이퍼 엣지 스트리퍼
JP2006278821A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 半導体製造装置、半導体装置の製造方法および半導体製造装置のクリーニング方法
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KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
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US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
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KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US20080202689A1 (en) * 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
US8137501B2 (en) * 2007-02-08 2012-03-20 Lam Research Corporation Bevel clean device

Also Published As

Publication number Publication date
JP2008147650A (ja) 2008-06-26
US20080135177A1 (en) 2008-06-12
KR100823302B1 (ko) 2008-04-17

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