KR100818859B1 - 단결정 인상용 흑연재료와 그 제조방법 - Google Patents
단결정 인상용 흑연재료와 그 제조방법 Download PDFInfo
- Publication number
- KR100818859B1 KR100818859B1 KR1020020049741A KR20020049741A KR100818859B1 KR 100818859 B1 KR100818859 B1 KR 100818859B1 KR 1020020049741 A KR1020020049741 A KR 1020020049741A KR 20020049741 A KR20020049741 A KR 20020049741A KR 100818859 B1 KR100818859 B1 KR 100818859B1
- Authority
- KR
- South Korea
- Prior art keywords
- graphite
- thermal expansion
- weight
- single crystal
- parts
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
- 단결정의 인상에 사용되고, 하기 (A), (B)의 물리 특성을 만족하는 것을 특징으로 하는 단결정 인상용 흑연재료.(A) 누적 기공 용적이 50∼100㎣/g인 것,(B) 실온∼1000℃에서의 열팽창 계수가 3.0∼4.0(×10-6/℃)인 것,
- 탄소질 골재 100중량부를 기준으로 하여, 실온∼100℃에서의 열팽창 계수가 1.5∼3.5(×10-6/℃)인 코크스 50중량부 이상과 흑연 분말 50중량부 이하를 배합한 탄소질 골재에 점결재를 첨가, 혼련한 후에 분쇄, 분급, 성형후, 상법(常法)에 의해 소성, 흑연화, 고순도 처리를 실시하는 것을 특징으로 하는 단결정 인상용 흑연재료의 제조방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002216054A JP4312432B2 (ja) | 2002-07-25 | 2002-07-25 | 単結晶引き上げ用黒鉛材料及びその製造方法 |
JPJP-P-2002-00216054 | 2002-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040010001A KR20040010001A (ko) | 2004-01-31 |
KR100818859B1 true KR100818859B1 (ko) | 2008-04-01 |
Family
ID=31937913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020049741A KR100818859B1 (ko) | 2002-07-25 | 2002-08-22 | 단결정 인상용 흑연재료와 그 제조방법 |
Country Status (2)
Country | Link |
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JP (1) | JP4312432B2 (ko) |
KR (1) | KR100818859B1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130305984A1 (en) * | 2011-02-02 | 2013-11-21 | Toyo Tanso Co., Ltd. | Graphite crucible for single crystal pulling apparatus and method of manufacturing same |
JP2013001576A (ja) * | 2011-06-10 | 2013-01-07 | Ibiden Co Ltd | 黒鉛材の製造方法および黒鉛材 |
JP6073648B2 (ja) * | 2012-11-07 | 2017-02-01 | イビデン株式会社 | 黒鉛材の製造方法および炭素系原料の粉砕装置 |
CN115246737B (zh) * | 2022-08-09 | 2023-05-26 | 中钢集团南京新材料研究院有限公司 | 一种制备等静压石墨制品的焙烧方法及其制品 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57191292A (en) * | 1981-05-19 | 1982-11-25 | Toshiba Ceramics Co Ltd | Graphite crucible for preparing single crystal of semiconductor |
JPH05270971A (ja) * | 1992-03-27 | 1993-10-19 | Sumitomo Metal Ind Ltd | 単結晶引き上げ用黒鉛ルツボ及びその製造方法 |
JPH07187878A (ja) * | 1992-03-24 | 1995-07-25 | Tokai Carbon Co Ltd | シリコン単結晶製造用黒鉛ルツボ |
JPH09328392A (ja) * | 1996-04-08 | 1997-12-22 | Nippon Steel Corp | シリコン単結晶製造用黒鉛ルツボ |
JPH10203869A (ja) * | 1997-01-23 | 1998-08-04 | Nippon Steel Corp | 低熱膨張係数を有する高密度等方性黒鉛材の製造方法 |
-
2002
- 2002-07-25 JP JP2002216054A patent/JP4312432B2/ja not_active Expired - Fee Related
- 2002-08-22 KR KR1020020049741A patent/KR100818859B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57191292A (en) * | 1981-05-19 | 1982-11-25 | Toshiba Ceramics Co Ltd | Graphite crucible for preparing single crystal of semiconductor |
JPH07187878A (ja) * | 1992-03-24 | 1995-07-25 | Tokai Carbon Co Ltd | シリコン単結晶製造用黒鉛ルツボ |
JPH05270971A (ja) * | 1992-03-27 | 1993-10-19 | Sumitomo Metal Ind Ltd | 単結晶引き上げ用黒鉛ルツボ及びその製造方法 |
JPH09328392A (ja) * | 1996-04-08 | 1997-12-22 | Nippon Steel Corp | シリコン単結晶製造用黒鉛ルツボ |
JPH10203869A (ja) * | 1997-01-23 | 1998-08-04 | Nippon Steel Corp | 低熱膨張係数を有する高密度等方性黒鉛材の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2004059332A (ja) | 2004-02-26 |
JP4312432B2 (ja) | 2009-08-12 |
KR20040010001A (ko) | 2004-01-31 |
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