KR100814393B1 - 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법 - Google Patents

상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법 Download PDF

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KR100814393B1
KR100814393B1 KR1020070027395A KR20070027395A KR100814393B1 KR 100814393 B1 KR100814393 B1 KR 100814393B1 KR 1020070027395 A KR1020070027395 A KR 1020070027395A KR 20070027395 A KR20070027395 A KR 20070027395A KR 100814393 B1 KR100814393 B1 KR 100814393B1
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South Korea
Prior art keywords
phase change
tellurium
change material
material layer
antimony
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Korean (ko)
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김도형
강신재
박인선
임현석
오규환
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삼성전자주식회사
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Priority to US12/051,043 priority patent/US8192592B2/en
Priority to JP2008072450A priority patent/JP2008235904A/ja
Priority to TW097110242A priority patent/TW200849685A/zh
Priority to CN2008100830789A priority patent/CN101271961B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
KR1020070027395A 2007-03-21 2007-03-21 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법 Active KR100814393B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020070027395A KR100814393B1 (ko) 2007-03-21 2007-03-21 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법
US12/051,043 US8192592B2 (en) 2007-03-21 2008-03-19 Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
JP2008072450A JP2008235904A (ja) 2007-03-21 2008-03-19 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法
TW097110242A TW200849685A (en) 2007-03-21 2008-03-21 Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
CN2008100830789A CN101271961B (zh) 2007-03-21 2008-03-21 形成包括碲的相变材料层的方法和使用该相变材料层来制造相变存储器的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070027395A KR100814393B1 (ko) 2007-03-21 2007-03-21 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법

Publications (1)

Publication Number Publication Date
KR100814393B1 true KR100814393B1 (ko) 2008-03-18

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Country Status (5)

Country Link
US (1) US8192592B2 (https=)
JP (1) JP2008235904A (https=)
KR (1) KR100814393B1 (https=)
CN (1) CN101271961B (https=)
TW (1) TW200849685A (https=)

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US9012876B2 (en) * 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
CN102544361A (zh) * 2010-12-31 2012-07-04 中国科学院上海微系统与信息技术研究所 可用于相变存储的相变材料及调节其相变参数的方法
KR101952879B1 (ko) * 2011-02-01 2019-02-28 매크로닉스 인터내셔널 컴퍼니 리미티드 도핑된 상 변화 재료를 형성하기 위한 복합 타겟의 스퍼터링
US8426242B2 (en) * 2011-02-01 2013-04-23 Macronix International Co., Ltd. Composite target sputtering for forming doped phase change materials
CN102637820B (zh) * 2011-02-09 2014-06-04 中芯国际集成电路制造(上海)有限公司 相变存储器的形成方法
CN102751435A (zh) * 2011-04-21 2012-10-24 中国科学院上海微系统与信息技术研究所 相变存储材料及其制备方法
US8946666B2 (en) 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
CN102347446B (zh) * 2011-10-27 2015-04-15 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的Ge-Sb-Te富Ge掺N相变材料及其制备方法
US8932901B2 (en) 2011-10-31 2015-01-13 Macronix International Co., Ltd. Stressed phase change materials
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
CN104966717B (zh) * 2014-01-24 2018-04-13 旺宏电子股份有限公司 一种存储器装置及提供该存储器装置的方法
US10602250B2 (en) 2016-10-13 2020-03-24 Bose Corporation Acoustaical devices employing phase change materials
US10531174B2 (en) * 2016-10-13 2020-01-07 Bose Corporation Earpiece employing cooling and sensation inducing materials
US10777466B2 (en) * 2017-11-28 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Fin cutting process and structures formed thereby
JP7416382B2 (ja) * 2018-07-10 2024-01-17 国立研究開発法人産業技術総合研究所 積層構造体及びその製造方法並びに半導体デバイス
KR102634805B1 (ko) * 2018-08-23 2024-02-08 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
JP2021134380A (ja) * 2020-02-26 2021-09-13 三菱マテリアル株式会社 スパッタリングターゲット
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Publication number Priority date Publication date Assignee Title
KR20110024101A (ko) * 2009-09-01 2011-03-09 삼성전자주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자
KR101653569B1 (ko) 2009-09-01 2016-09-02 삼성전자주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자
US8778728B2 (en) 2010-10-11 2014-07-15 Samsung Electronics Co., Ltd. Methods of manufacturing non-volatile phase-change memory devices
KR101771084B1 (ko) * 2010-10-11 2017-08-24 삼성전자 주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자의 제조 방법

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US8192592B2 (en) 2012-06-05
CN101271961B (zh) 2011-08-31
TW200849685A (en) 2008-12-16

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