KR100810482B1 - 가변 ｒｆ 커플링을 가지는 코일, 이를 구비한 플라즈마 처리기 및 이를 이용한 ｒｆ 플라즈마 제어방법 - Google Patents

가변 ｒｆ 커플링을 가지는 코일, 이를 구비한 플라즈마 처리기 및 이를 이용한 ｒｆ 플라즈마 제어방법 Download PDF

Info

Publication number
KR100810482B1
KR100810482B1 KR1020017012440A KR20017012440A KR100810482B1 KR 100810482 B1 KR100810482 B1 KR 100810482B1 KR 1020017012440 A KR1020017012440 A KR 1020017012440A KR 20017012440 A KR20017012440 A KR 20017012440A KR 100810482 B1 KR100810482 B1 KR 100810482B1
Authority
KR
South Korea
Prior art keywords
plasma
coil
shield
different
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017012440A
Other languages
English (en)
Korean (ko)
Other versions
KR20020013842A (ko
Inventor
투쾅 니
웬리 콜리슨
존 피. 홀랜드
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20020013842A publication Critical patent/KR20020013842A/ko
Application granted granted Critical
Publication of KR100810482B1 publication Critical patent/KR100810482B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017012440A 1999-03-31 2000-02-10 가변 ｒｆ 커플링을 가지는 코일, 이를 구비한 플라즈마 처리기 및 이를 이용한 ｒｆ 플라즈마 제어방법 Expired - Lifetime KR100810482B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/281,807 US6229264B1 (en) 1999-03-31 1999-03-31 Plasma processor with coil having variable rf coupling
US09/281,807 1999-03-31

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020077004982A Division KR100742549B1 (ko) 1999-03-31 2000-02-10 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기
KR1020077004983A Division KR100794539B1 (ko) 1999-03-31 2000-02-10 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기

Publications (2)

Publication Number Publication Date
KR20020013842A KR20020013842A (ko) 2002-02-21
KR100810482B1 true KR100810482B1 (ko) 2008-03-07

Family

ID=23078868

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017012440A Expired - Lifetime KR100810482B1 (ko) 1999-03-31 2000-02-10 가변 ｒｆ 커플링을 가지는 코일, 이를 구비한 플라즈마 처리기 및 이를 이용한 ｒｆ 플라즈마 제어방법

Country Status (7)

Country Link
US (1) US6229264B1 (https=)
EP (1) EP1166321B1 (https=)
JP (1) JP2002540582A (https=)
KR (1) KR100810482B1 (https=)
DE (1) DE60045815D1 (https=)
TW (1) TW463201B (https=)
WO (1) WO2000058993A1 (https=)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1095217A4 (en) * 1998-06-29 2006-08-02 Tokyo Electron Ltd VACUUM PUMP FOR PLASMA
US6744213B2 (en) * 1999-11-15 2004-06-01 Lam Research Corporation Antenna for producing uniform process rates
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
DE60038811D1 (de) * 1999-11-15 2008-06-19 Lam Res Corp Behandlungsvorrichtungen
WO2001073814A2 (en) * 2000-03-28 2001-10-04 Tokyo Electron Limited Method and apparatus for controlling power delivered to a multiple segment electrode
JP3889918B2 (ja) * 2000-08-25 2007-03-07 富士通株式会社 プラズマエッチング方法、プラズマエッチング装置及びプラズマ処理装置
US6528949B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Apparatus for elimination of plasma lighting inside a gas line in a strong RF field
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US20060124455A1 (en) * 2003-06-02 2006-06-15 Yizhou Song Thin film forming device and thin film forming method
US7691243B2 (en) * 2004-06-22 2010-04-06 Tokyo Electron Limited Internal antennae for plasma processing with metal plasma
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
KR100665839B1 (ko) * 2004-12-03 2007-01-09 삼성전자주식회사 플라즈마 처리장치
KR100774496B1 (ko) * 2005-11-04 2007-11-08 세메스 주식회사 플라즈마 처리 장치
KR100717114B1 (ko) * 2005-11-17 2007-05-11 (주)아이씨디 유도 결합형 안테나를 구비하는 플라즈마 발생 장치
US7419551B2 (en) * 2006-05-03 2008-09-02 Applied Materials, Inc. Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
US7431797B2 (en) * 2006-05-03 2008-10-07 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator
US7520999B2 (en) * 2006-05-03 2009-04-21 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US20080156264A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US20090162570A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Apparatus and method for processing a substrate using inductively coupled plasma technology
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8062472B2 (en) * 2007-12-19 2011-11-22 Applied Materials, Inc. Method of correcting baseline skew by a novel motorized source coil assembly
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8916022B1 (en) * 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8741097B2 (en) * 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
KR101146092B1 (ko) 2009-12-11 2012-05-15 한국카모플라스트(주) 충격흡수 홈을 구성한 고무 크로라
SG10201502985TA (en) * 2010-04-20 2015-05-28 Lam Res Corp Methods and apparatus for an induction coil arrangement in a plasma processing system
JP2012004196A (ja) * 2010-06-15 2012-01-05 Tokyo Electron Ltd プラズマ処理装置及びその処理ガス供給構造
US9162718B2 (en) 2010-12-14 2015-10-20 Camso Inc. Endless track for traction of a vehicle
US9334001B2 (en) 2010-12-14 2016-05-10 Camso Inc. Drive sprocket, drive lug configuration and track drive arrangement for an endless track vehicle
KR101256962B1 (ko) * 2011-05-31 2013-04-26 세메스 주식회사 안테나 유닛 및 상기 유닛을 포함하는 기판 처리 장치, 그리고 상기 장치를 이용한 기판 처리 방법
JP5712889B2 (ja) * 2011-10-07 2015-05-07 東京エレクトロン株式会社 成膜装置及び基板処理装置
US8895452B2 (en) 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US20140175055A1 (en) * 2012-12-21 2014-06-26 Qualcomm Mems Technologies, Inc. Adjustable coil for inductively coupled plasma
KR102175083B1 (ko) * 2013-10-15 2020-11-06 세메스 주식회사 플라즈마 발생 유닛 및 그를 포함하는 기판 처리 장치
KR102348090B1 (ko) * 2015-03-23 2022-01-10 주성엔지니어링(주) 유도 결합 플라즈마 발생용 안테나 및 절연 지지 장치
KR102316591B1 (ko) * 2015-04-30 2021-10-25 에스케이하이닉스 주식회사 유도결합형 플라즈마 발생장치용 안테나 및 그의 제어방법과 그를 포함하는 유도결합 플라즈마 발생장치
US10533251B2 (en) 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus
JP6647180B2 (ja) * 2016-09-09 2020-02-14 東京エレクトロン株式会社 アンテナ装置及びこれを用いたプラズマ発生装置、並びにプラズマ処理装置
JP6999368B2 (ja) * 2017-11-01 2022-01-18 東京エレクトロン株式会社 プラズマ処理装置
CN108878250B (zh) * 2018-06-29 2020-11-10 武汉华星光电技术有限公司 一种干法刻蚀设备及刻蚀方法
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112768333B (zh) * 2019-11-05 2025-07-15 汉民科技股份有限公司 磁力线遮蔽控制反应腔室磁场的蚀刻机结构
KR102309660B1 (ko) * 2019-11-21 2021-10-07 주식회사 유진테크 기판 처리 장치
JP7003344B2 (ja) * 2020-02-03 2022-01-20 三菱電機株式会社 可変容量素子
CN112397362B (zh) * 2020-11-18 2023-11-14 北京北方华创微电子装备有限公司 射频装置及半导体设备
JP7229448B1 (ja) * 2021-02-04 2023-02-27 三菱電機株式会社 可変容量素子
KR102596797B1 (ko) * 2021-11-02 2023-11-02 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
CN216928483U (zh) * 2021-12-01 2022-07-08 费勉仪器科技(南京)有限公司 内嵌式射频等离子体源发生装置及真空处理系统
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
CN119517714A (zh) * 2023-08-25 2025-02-25 江苏鲁汶仪器股份有限公司 等离子刻蚀机及其辅助电场变径装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134926A (ja) * 1987-11-20 1989-05-26 Nippon Telegr & Teleph Corp <Ntt> プラズマ生成源およびそれを用いたプラズマ処理装置
JPH0982692A (ja) * 1995-09-14 1997-03-28 Matsushita Electric Ind Co Ltd プラズマ処理装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1037402A (en) 1911-12-04 1912-09-03 August J Zehendner Headlight blind or shutter.
US2341387A (en) 1943-03-13 1944-02-08 Eastman Kodak Co Diaphragm control mechanism
US2439330A (en) 1947-07-01 1948-04-06 Otto J Zander Signal and searchlight shutter
US2695547A (en) 1951-05-21 1954-11-30 Otto J Zander Signal and searchlight shutter
JPH02156233A (ja) 1988-12-08 1990-06-15 Nikon Corp 絞り装置
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304279A (en) 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5433812A (en) 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JP2770753B2 (ja) * 1994-09-16 1998-07-02 日本電気株式会社 プラズマ処理装置およびプラズマ処理方法
JP3090877B2 (ja) * 1995-06-06 2000-09-25 松下電器産業株式会社 プラズマ処理方法および装置
US5874704A (en) 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5731565A (en) 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
WO1997016946A2 (en) 1995-10-31 1997-05-09 Arakhne Technology Inc Uniform plasma generation, filter, and neutralization apparatus and method
JP3790291B2 (ja) * 1996-02-21 2006-06-28 サムコ株式会社 プラズマ処理装置
CA2207154A1 (en) 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5759280A (en) 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5897712A (en) * 1996-07-16 1999-04-27 Applied Materials, Inc. Plasma uniformity control for an inductive plasma source
EP0838839B1 (en) 1996-09-27 2008-05-21 Surface Technology Systems Plc Plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134926A (ja) * 1987-11-20 1989-05-26 Nippon Telegr & Teleph Corp <Ntt> プラズマ生成源およびそれを用いたプラズマ処理装置
JPH0982692A (ja) * 1995-09-14 1997-03-28 Matsushita Electric Ind Co Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP2002540582A (ja) 2002-11-26
WO2000058993A1 (en) 2000-10-05
DE60045815D1 (de) 2011-05-19
US6229264B1 (en) 2001-05-08
TW463201B (en) 2001-11-11
KR20020013842A (ko) 2002-02-21
EP1166321A1 (en) 2002-01-02
EP1166321B1 (en) 2011-04-06

Similar Documents

Publication Publication Date Title
KR100810482B1 (ko) 가변 ｒｆ 커플링을 가지는 코일, 이를 구비한 플라즈마 처리기 및 이를 이용한 ｒｆ 플라즈마 제어방법
JP2002540582A5 (https=)
US9953811B2 (en) Plasma processing method
US6451161B1 (en) Method and apparatus for generating high-density uniform plasma
JP4540758B2 (ja) 真空プラズマ加工機
US9218943B2 (en) Plasma processing apparatus and plasma processing method
KR100274757B1 (ko) 플라즈마 처리장치 및 플라즈마 처리방법
CN102054649B (zh) 等离子体处理装置以及等离子体处理方法
CN100565775C (zh) 具有多个绕组线圈的感应等离子处理器和控制等离子浓度的方法
JP4646272B2 (ja) プラズマ加工装置
KR101785869B1 (ko) 플라즈마 처리 장치
US5975013A (en) Vacuum plasma processor having coil with small magnetic field in its center
US6172321B1 (en) Method and apparatus for plasma processing apparatus
JP4769586B2 (ja) プラズマ反応器及びプラズマイオン濃度分布の均一性を改善する方法
JP3150058B2 (ja) プラズマ処理装置及びプラズマ処理方法
CN1953635A (zh) 等离子体反应器中离子密度、能量分布及解离的独立控制
US20060021580A1 (en) Plasma processing apparatus and impedance adjustment method
CN115398602A (zh) 等离子处理装置以及等离子处理方法
KR102285126B1 (ko) 플라스마 처리 장치
KR100742549B1 (ko) 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기
JP6097317B2 (ja) プラズマ処理方法
KR100794539B1 (ko) 가변 ｒｆ 커플링을 가지는 코일을 구비한 플라즈마 처리기

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20010928

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20050203

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060829

Patent event code: PE09021S01D

A107 Divisional application of patent
AMND Amendment
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20070228

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20070620

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20060829

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20070720

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20070620

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20071217

Appeal identifier: 2007101007991

Request date: 20070720

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20070820

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20070720

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20070228

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20050203

Patent event code: PB09011R02I

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20070906

Patent event code: PE09021S01D

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

Patent event date: 20071217

Comment text: Decision to Grant Registration

Patent event code: PB07012S01D

Patent event date: 20070824

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event code: PB07011S01I

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20080228

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20080228

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction
PR1001 Payment of annual fee

Payment date: 20110217

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20120210

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20130208

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20130208

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20140211

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20140211

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20150209

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20150209

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20160211

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20160211

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20170223

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20170223

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20180209

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20180209

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20190213

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20190213

Start annual number: 12

End annual number: 12

PC1801 Expiration of term

Termination date: 20200810

Termination category: Expiration of duration