JP2002540582A - 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ - Google Patents

可変高周波結合を有するコイルを備えたプラズマ・プロセッサ

Info

Publication number
JP2002540582A
JP2002540582A JP2000608404A JP2000608404A JP2002540582A JP 2002540582 A JP2002540582 A JP 2002540582A JP 2000608404 A JP2000608404 A JP 2000608404A JP 2000608404 A JP2000608404 A JP 2000608404A JP 2002540582 A JP2002540582 A JP 2002540582A
Authority
JP
Japan
Prior art keywords
coil
plasma
different
high frequency
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000608404A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002540582A5 (https=
Inventor
ナイ トゥチャン
コリソン ウェンリ
ピー ホーランド ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2002540582A publication Critical patent/JP2002540582A/ja
Publication of JP2002540582A5 publication Critical patent/JP2002540582A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2000608404A 1999-03-31 2000-02-10 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ Pending JP2002540582A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/281,807 US6229264B1 (en) 1999-03-31 1999-03-31 Plasma processor with coil having variable rf coupling
US09/281,807 1999-03-31
PCT/US2000/003314 WO2000058993A1 (en) 1999-03-31 2000-02-10 Plasma processor with coil having variable rf coupling

Publications (2)

Publication Number Publication Date
JP2002540582A true JP2002540582A (ja) 2002-11-26
JP2002540582A5 JP2002540582A5 (https=) 2009-12-10

Family

ID=23078868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000608404A Pending JP2002540582A (ja) 1999-03-31 2000-02-10 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ

Country Status (7)

Country Link
US (1) US6229264B1 (https=)
EP (1) EP1166321B1 (https=)
JP (1) JP2002540582A (https=)
KR (1) KR100810482B1 (https=)
DE (1) DE60045815D1 (https=)
TW (1) TW463201B (https=)
WO (1) WO2000058993A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130083489A (ko) * 2009-09-03 2013-07-22 어플라이드 머티어리얼스, 인코포레이티드 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기
JP2019087318A (ja) * 2017-11-01 2019-06-06 東京エレクトロン株式会社 プラズマ処理装置
JPWO2021156910A1 (https=) * 2020-02-03 2021-08-12
WO2022168215A1 (ja) * 2021-02-04 2022-08-11 三菱電機株式会社 可変容量素子

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1095217A4 (en) * 1998-06-29 2006-08-02 Tokyo Electron Ltd VACUUM PUMP FOR PLASMA
US6744213B2 (en) * 1999-11-15 2004-06-01 Lam Research Corporation Antenna for producing uniform process rates
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
DE60038811D1 (de) * 1999-11-15 2008-06-19 Lam Res Corp Behandlungsvorrichtungen
WO2001073814A2 (en) * 2000-03-28 2001-10-04 Tokyo Electron Limited Method and apparatus for controlling power delivered to a multiple segment electrode
JP3889918B2 (ja) * 2000-08-25 2007-03-07 富士通株式会社 プラズマエッチング方法、プラズマエッチング装置及びプラズマ処理装置
US6528949B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Apparatus for elimination of plasma lighting inside a gas line in a strong RF field
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US20060124455A1 (en) * 2003-06-02 2006-06-15 Yizhou Song Thin film forming device and thin film forming method
US7691243B2 (en) * 2004-06-22 2010-04-06 Tokyo Electron Limited Internal antennae for plasma processing with metal plasma
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
KR100665839B1 (ko) * 2004-12-03 2007-01-09 삼성전자주식회사 플라즈마 처리장치
KR100774496B1 (ko) * 2005-11-04 2007-11-08 세메스 주식회사 플라즈마 처리 장치
KR100717114B1 (ko) * 2005-11-17 2007-05-11 (주)아이씨디 유도 결합형 안테나를 구비하는 플라즈마 발생 장치
US7419551B2 (en) * 2006-05-03 2008-09-02 Applied Materials, Inc. Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
US7431797B2 (en) * 2006-05-03 2008-10-07 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator
US7520999B2 (en) * 2006-05-03 2009-04-21 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US20080156264A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US20090162570A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Apparatus and method for processing a substrate using inductively coupled plasma technology
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8062472B2 (en) * 2007-12-19 2011-11-22 Applied Materials, Inc. Method of correcting baseline skew by a novel motorized source coil assembly
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8916022B1 (en) * 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8741097B2 (en) * 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
KR101146092B1 (ko) 2009-12-11 2012-05-15 한국카모플라스트(주) 충격흡수 홈을 구성한 고무 크로라
SG10201502985TA (en) * 2010-04-20 2015-05-28 Lam Res Corp Methods and apparatus for an induction coil arrangement in a plasma processing system
JP2012004196A (ja) * 2010-06-15 2012-01-05 Tokyo Electron Ltd プラズマ処理装置及びその処理ガス供給構造
US9162718B2 (en) 2010-12-14 2015-10-20 Camso Inc. Endless track for traction of a vehicle
US9334001B2 (en) 2010-12-14 2016-05-10 Camso Inc. Drive sprocket, drive lug configuration and track drive arrangement for an endless track vehicle
KR101256962B1 (ko) * 2011-05-31 2013-04-26 세메스 주식회사 안테나 유닛 및 상기 유닛을 포함하는 기판 처리 장치, 그리고 상기 장치를 이용한 기판 처리 방법
JP5712889B2 (ja) * 2011-10-07 2015-05-07 東京エレクトロン株式会社 成膜装置及び基板処理装置
US8895452B2 (en) 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US20140175055A1 (en) * 2012-12-21 2014-06-26 Qualcomm Mems Technologies, Inc. Adjustable coil for inductively coupled plasma
KR102175083B1 (ko) * 2013-10-15 2020-11-06 세메스 주식회사 플라즈마 발생 유닛 및 그를 포함하는 기판 처리 장치
KR102348090B1 (ko) * 2015-03-23 2022-01-10 주성엔지니어링(주) 유도 결합 플라즈마 발생용 안테나 및 절연 지지 장치
KR102316591B1 (ko) * 2015-04-30 2021-10-25 에스케이하이닉스 주식회사 유도결합형 플라즈마 발생장치용 안테나 및 그의 제어방법과 그를 포함하는 유도결합 플라즈마 발생장치
US10533251B2 (en) 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus
JP6647180B2 (ja) * 2016-09-09 2020-02-14 東京エレクトロン株式会社 アンテナ装置及びこれを用いたプラズマ発生装置、並びにプラズマ処理装置
CN108878250B (zh) * 2018-06-29 2020-11-10 武汉华星光电技术有限公司 一种干法刻蚀设备及刻蚀方法
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112768333B (zh) * 2019-11-05 2025-07-15 汉民科技股份有限公司 磁力线遮蔽控制反应腔室磁场的蚀刻机结构
KR102309660B1 (ko) * 2019-11-21 2021-10-07 주식회사 유진테크 기판 처리 장치
CN112397362B (zh) * 2020-11-18 2023-11-14 北京北方华创微电子装备有限公司 射频装置及半导体设备
KR102596797B1 (ko) * 2021-11-02 2023-11-02 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
CN216928483U (zh) * 2021-12-01 2022-07-08 费勉仪器科技(南京)有限公司 内嵌式射频等离子体源发生装置及真空处理系统
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
CN119517714A (zh) * 2023-08-25 2025-02-25 江苏鲁汶仪器股份有限公司 等离子刻蚀机及其辅助电场变径装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888190A (ja) * 1994-09-16 1996-04-02 Nec Corp プラズマ処理装置およびプラズマ処理方法
JPH0955375A (ja) * 1995-06-06 1997-02-25 Matsushita Electric Ind Co Ltd プラズマ処理方法および装置
JPH09228056A (ja) * 1996-02-21 1997-09-02 Samuko Internatl Kenkyusho:Kk プラズマ処理装置
JPH10106797A (ja) * 1996-07-16 1998-04-24 Applied Materials Inc 誘導プラズマ源のためのプラズマ均一性制御
JPH10125497A (ja) * 1996-06-10 1998-05-15 Lam Res Corp ほぼ均一なプラズマ束を誘導するための誘導結合源

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1037402A (en) 1911-12-04 1912-09-03 August J Zehendner Headlight blind or shutter.
US2341387A (en) 1943-03-13 1944-02-08 Eastman Kodak Co Diaphragm control mechanism
US2439330A (en) 1947-07-01 1948-04-06 Otto J Zander Signal and searchlight shutter
US2695547A (en) 1951-05-21 1954-11-30 Otto J Zander Signal and searchlight shutter
JPH01134926A (ja) * 1987-11-20 1989-05-26 Nippon Telegr & Teleph Corp <Ntt> プラズマ生成源およびそれを用いたプラズマ処理装置
JPH02156233A (ja) 1988-12-08 1990-06-15 Nikon Corp 絞り装置
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304279A (en) 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5433812A (en) 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5874704A (en) 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5731565A (en) 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
JP3165356B2 (ja) * 1995-09-14 2001-05-14 松下電器産業株式会社 プラズマ処理装置
WO1997016946A2 (en) 1995-10-31 1997-05-09 Arakhne Technology Inc Uniform plasma generation, filter, and neutralization apparatus and method
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5759280A (en) 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
EP0838839B1 (en) 1996-09-27 2008-05-21 Surface Technology Systems Plc Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888190A (ja) * 1994-09-16 1996-04-02 Nec Corp プラズマ処理装置およびプラズマ処理方法
JPH0955375A (ja) * 1995-06-06 1997-02-25 Matsushita Electric Ind Co Ltd プラズマ処理方法および装置
JPH09228056A (ja) * 1996-02-21 1997-09-02 Samuko Internatl Kenkyusho:Kk プラズマ処理装置
JPH10125497A (ja) * 1996-06-10 1998-05-15 Lam Res Corp ほぼ均一なプラズマ束を誘導するための誘導結合源
JPH10106797A (ja) * 1996-07-16 1998-04-24 Applied Materials Inc 誘導プラズマ源のためのプラズマ均一性制御

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130083489A (ko) * 2009-09-03 2013-07-22 어플라이드 머티어리얼스, 인코포레이티드 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기
KR101668587B1 (ko) * 2009-09-03 2016-10-24 어플라이드 머티어리얼스, 인코포레이티드 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기
JP2019087318A (ja) * 2017-11-01 2019-06-06 東京エレクトロン株式会社 プラズマ処理装置
JP6999368B2 (ja) 2017-11-01 2022-01-18 東京エレクトロン株式会社 プラズマ処理装置
JPWO2021156910A1 (https=) * 2020-02-03 2021-08-12
JP7003344B2 (ja) 2020-02-03 2022-01-20 三菱電機株式会社 可変容量素子
WO2022168215A1 (ja) * 2021-02-04 2022-08-11 三菱電機株式会社 可変容量素子
JP7229448B1 (ja) * 2021-02-04 2023-02-27 三菱電機株式会社 可変容量素子

Also Published As

Publication number Publication date
WO2000058993A1 (en) 2000-10-05
DE60045815D1 (de) 2011-05-19
US6229264B1 (en) 2001-05-08
TW463201B (en) 2001-11-11
KR20020013842A (ko) 2002-02-21
EP1166321A1 (en) 2002-01-02
KR100810482B1 (ko) 2008-03-07
EP1166321B1 (en) 2011-04-06

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