KR100782621B1 - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

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Publication number
KR100782621B1
KR100782621B1 KR1020057003051A KR20057003051A KR100782621B1 KR 100782621 B1 KR100782621 B1 KR 100782621B1 KR 1020057003051 A KR1020057003051 A KR 1020057003051A KR 20057003051 A KR20057003051 A KR 20057003051A KR 100782621 B1 KR100782621 B1 KR 100782621B1
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South Korea
Prior art keywords
plasma
substrate
processed
high frequency
applying
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Expired - Fee Related
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KR1020057003051A
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English (en)
Korean (ko)
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KR20050058464A (ko
Inventor
도시히코 신도
신 오카모토
기미히로 히구치
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동경 엘렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020057003051A 2002-08-30 2003-08-28 플라즈마 처리 방법 및 플라즈마 처리 장치 Expired - Fee Related KR100782621B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002256096A JP4322484B2 (ja) 2002-08-30 2002-08-30 プラズマ処理方法及びプラズマ処理装置
JPJP-P-2002-00256096 2002-08-30

Publications (2)

Publication Number Publication Date
KR20050058464A KR20050058464A (ko) 2005-06-16
KR100782621B1 true KR100782621B1 (ko) 2007-12-06

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057003051A Expired - Fee Related KR100782621B1 (ko) 2002-08-30 2003-08-28 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (6)

Country Link
JP (1) JP4322484B2 (https=)
KR (1) KR100782621B1 (https=)
CN (1) CN100414672C (https=)
AU (1) AU2003261790A1 (https=)
TW (1) TW200410332A (https=)
WO (1) WO2004021427A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
CN101740340B (zh) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及半导体加工设备
JP2010199310A (ja) * 2009-02-25 2010-09-09 Sharp Corp プラズマエッチング方法
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (ja) * 2012-09-26 2014-04-03 シャープ株式会社 基板処理装置および基板処理方法、半導体装置の製造方法
EP2950333B1 (en) 2014-02-28 2018-01-31 ULVAC, Inc. Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
JP6558901B2 (ja) * 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP6595334B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
KR102148833B1 (ko) * 2016-02-26 2020-08-28 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 주입형 포토레지스트 스트리핑 공정
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
SG11202105295TA (en) * 2018-12-13 2021-06-29 Applied Materials Inc Methods for depositing phosphorus-doped silicon nitride films
TWI869392B (zh) 2019-04-15 2025-01-11 美商應用材料股份有限公司 處理基板的方法
JP7482657B2 (ja) * 2020-03-17 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び半導体装置の製造方法
CN113154610A (zh) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 一种具有温度调节功能的空气净化器
JP7631172B2 (ja) * 2021-11-01 2025-02-18 東京エレクトロン株式会社 クリーニング方法、基板の処理方法及びプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010082162A (ko) * 2000-02-14 2001-08-29 히가시 데쓰로 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JP3907256B2 (ja) * 1997-01-10 2007-04-18 芝浦メカトロニクス株式会社 真空処理装置の静電チャック装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010082162A (ko) * 2000-02-14 2001-08-29 히가시 데쓰로 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
CN1679148A (zh) 2005-10-05
WO2004021427A1 (ja) 2004-03-11
JP2004095909A (ja) 2004-03-25
CN100414672C (zh) 2008-08-27
JP4322484B2 (ja) 2009-09-02
TW200410332A (en) 2004-06-16
KR20050058464A (ko) 2005-06-16
AU2003261790A1 (en) 2004-03-19
TWI324361B (https=) 2010-05-01

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