KR100770256B1 - 플렉서블 평판표시장치의 제조방법 - Google Patents
플렉서블 평판표시장치의 제조방법 Download PDFInfo
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- KR100770256B1 KR100770256B1 KR1020050112430A KR20050112430A KR100770256B1 KR 100770256 B1 KR100770256 B1 KR 100770256B1 KR 1020050112430 A KR1020050112430 A KR 1020050112430A KR 20050112430 A KR20050112430 A KR 20050112430A KR 100770256 B1 KR100770256 B1 KR 100770256B1
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- South Korea
- Prior art keywords
- flat panel
- panel display
- flexible flat
- scan
- laser
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 238000003698 laser cutting Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (3)
- 도전성기판 상에 다수의 스캔라인, 테이터라인으로 정의되는 다수의 화소영역과 각 화소영역에 박막트랜지스터 및 화소전극이 형성되어 있으며, 상기 데이터라인 및 스캔라인의 끝부분에 패드부 및 쇼팅바를 구비하는 평판표시장치에 있어서,스크라이빙 라인보다 소자 안쪽으로 위치하는 상기 스캔 및 데이터 패드부의 메탈층을 레이저를 조사하여 상기 쇼팅바와 전기적으로 절연하는 단계;상기 스크라이빙 라인을 레이저로 커팅하는 단계;를 포함하는 것을 특징으로 하는 플렉서블 평판표시장치의 제조방법.
- 제 1 항에 있어서,상기 스캔 패드부의 메탈층은 게이트 전극금속, 반사막 및 화소전극금속인 것을 특징으로 하는 플렉서블 평판표시장치의 제조방법.
- 제 1 항에 있어서,상기 데이터 패드부의 메탈층은 소스 또는 드레인 전극금속, 반사막 및 화소전극금속인 것을 특징으로 하는 플렉서블 평판표시장치의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050112430A KR100770256B1 (ko) | 2005-11-23 | 2005-11-23 | 플렉서블 평판표시장치의 제조방법 |
Applications Claiming Priority (1)
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KR1020050112430A KR100770256B1 (ko) | 2005-11-23 | 2005-11-23 | 플렉서블 평판표시장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070054438A KR20070054438A (ko) | 2007-05-29 |
KR100770256B1 true KR100770256B1 (ko) | 2007-10-25 |
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KR1020050112430A KR100770256B1 (ko) | 2005-11-23 | 2005-11-23 | 플렉서블 평판표시장치의 제조방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109434307A (zh) * | 2018-12-29 | 2019-03-08 | 大族激光科技产业集团股份有限公司 | 一种柔性屏幕的激光切割方法和激光切割装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013152142A1 (en) * | 2012-04-03 | 2013-10-10 | Tannas Jr Lawrence E | Apparatus and methods for resizing electronic displays |
KR102113174B1 (ko) * | 2013-04-30 | 2020-05-21 | 삼성디스플레이 주식회사 | 플렉시블 디스플레이 장치의 제조방법 |
KR20160126175A (ko) | 2015-04-22 | 2016-11-02 | 삼성디스플레이 주식회사 | 기판 절단 방법 및 표시 장치 제조 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11352505A (ja) * | 1998-06-12 | 1999-12-24 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
KR20000038529A (ko) * | 1998-12-04 | 2000-07-05 | 윤종용 | 액정표시기 패널의 제조방법 |
KR20050070251A (ko) * | 2003-12-30 | 2005-07-07 | 삼성전자주식회사 | 유연한 디스플레이 장치의 제조 방법 |
KR20050113478A (ko) * | 2004-05-29 | 2005-12-02 | 엘지.필립스 엘시디 주식회사 | 플렉서블 디스플레이의 제조방법 |
KR100685837B1 (ko) * | 2005-11-23 | 2007-02-22 | 삼성에스디아이 주식회사 | 플렉서블 평판표시장치의 제조방법 |
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2005
- 2005-11-23 KR KR1020050112430A patent/KR100770256B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11352505A (ja) * | 1998-06-12 | 1999-12-24 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
KR20000038529A (ko) * | 1998-12-04 | 2000-07-05 | 윤종용 | 액정표시기 패널의 제조방법 |
KR20050070251A (ko) * | 2003-12-30 | 2005-07-07 | 삼성전자주식회사 | 유연한 디스플레이 장치의 제조 방법 |
KR20050113478A (ko) * | 2004-05-29 | 2005-12-02 | 엘지.필립스 엘시디 주식회사 | 플렉서블 디스플레이의 제조방법 |
KR100685837B1 (ko) * | 2005-11-23 | 2007-02-22 | 삼성에스디아이 주식회사 | 플렉서블 평판표시장치의 제조방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109434307A (zh) * | 2018-12-29 | 2019-03-08 | 大族激光科技产业集团股份有限公司 | 一种柔性屏幕的激光切割方法和激光切割装置 |
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KR20070054438A (ko) | 2007-05-29 |
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