KR100760946B1 - Liquid crystal display device of in-plane switching and method for fabricating the same - Google Patents

Abstract

To provide a transverse electric field type liquid crystal display device and a method of manufacturing the same, which is suitable for preventing light leakage from a blue line, which is the last dot, and a transverse electric field type liquid crystal display device for achieving the above object crosses a substrate. A plurality of gate lines and data lines arranged to define a pixel area; A thin film transistor formed at an intersection of the gate line and the data line; A first common electrode formed on the same layer as the gate line and arranged in parallel with the gate line; A plurality of second common electrodes connected to the first common electrodes and formed at predetermined intervals in the pixel region; A dummy data line arranged in parallel with the data line at a predetermined interval from the second common electrode of the outermost side adjacent to the liquid crystal inlet; And a pixel electrode connected to the thin film transistor and formed at a predetermined interval between the plurality of second common electrodes.

Dummy data line, zigzag, transverse electric field, first common electrode, second common electrode

Description

Transverse electric field type liquid crystal display device and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE OF IN-PLANE SWITCHING AND METHOD FOR FABRICATING THE SAME}

1 is an exploded perspective view showing a part of a typical TN liquid crystal display device

Figure 2 is a schematic cross-sectional view showing a liquid crystal display device of a typical transverse electric field (IPS)

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltage on / off is performed in IPS mode.

4A and 4B are perspective views showing the operation of the IPS mode LCD in the off and on states, respectively.

5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art;

6A is an enlarged plan view of a liquid crystal display of an IPS according to the related art in the region 'A' of FIG. 5.

FIG. 6B is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along line II ′ of FIG. 6A.

7 is a plan view of a liquid crystal display of IPS according to an embodiment of the present invention;

FIG. 8A is an enlarged plan view of a liquid crystal display of an IPS according to an exemplary embodiment of the present invention in region 'B' of FIG. 7;                 

FIG. 8B is a cross-sectional view of a liquid crystal display of an IPS according to an embodiment of the present invention taken along line II-II ′ of FIG. 8A.

9A to 9C are cross-sectional views illustrating a method of manufacturing a liquid crystal display of IPS according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

70: seal material 71: liquid crystal inlet

80: upper substrate 81: black matrix

82: color filter layer 83: overcoat layer

90: lower substrate 91: gate line

91a: gate electrode 91b: first common electrode

91c: second common electrode 92: gate insulating film

93: active layer 94a: data line

94b: dummy data line 94c: source electrode

95 protective film 96 pixel electrode

96a: drain electrode 96b: storage electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display, and in particular, a liquid crystal display of an in-plane switching (hereinafter referred to as IPS) suitable for improving the last dot (blue) light leakage phenomenon occurring at low temperature. Relates to a device.

As the information society develops, the demand for display devices is increasing in various forms.In recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been developed. Various flat panel display devices have been studied, and some are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption, and mobile type such as monitor of notebook computer. In addition, it is being developed in various ways, such as a television for receiving and displaying broadcast signals, and a monitor of a computer.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.

Such a liquid crystal display device may be classified into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes a first glass substrate and a second glass substrate bonded together with a space. And a liquid crystal layer injected between the first and second glass substrates.

The first glass substrate (TFT array substrate) may include a plurality of gate lines arranged in one direction at a predetermined interval, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, and A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each gate line and data line, and a plurality of thin films that transmit signals of the data line to each pixel electrode by being switched by signals of the gate line The transistor is formed.

The second glass substrate (color filter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, an R, G, B color filter layer for expressing color colors, and a common electrode for implementing an image. Is formed. Of course, the common electrode is formed on the first glass substrate in the transverse electric field type liquid crystal display device.

The first and second glass substrates are bonded by a sealing material having a predetermined space by a spacer and having a liquid crystal injection hole, and a liquid crystal is injected between the two substrates.

In this case, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the reality. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.

On the other hand, the driving principle of the liquid crystal display device as described above uses the optical anisotropy and polarization properties of the liquid crystal.

Since the liquid crystal is thin and long in structure, the liquid crystal has a direction in the arrangement of molecules, and the liquid crystal may be artificially applied to control the direction of the molecular arrangement.

Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.

Such liquid crystals may be classified into positive liquid crystals having positive dielectric anisotropy and negative liquid crystals having negative dielectric anisotropy according to an electrical specific classification. The liquid crystal molecules arranged in parallel and having negative dielectric anisotropy are arranged perpendicularly to the direction in which the electric field is applied and the major axis of the liquid crystal molecules.

1 is an exploded perspective view illustrating a part of a general TN liquid crystal display device.

As shown in FIG. 1, the lower substrate 1 and the upper substrate 2 bonded to each other with a predetermined space, and the liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 are composed of. It is.

More specifically, the lower substrate 1 has a plurality of gate lines 4 arranged in one direction at regular intervals to define the pixel region P, and in a direction perpendicular to the gate lines 4. A plurality of data lines 5 are arranged at regular intervals, and a pixel electrode 6 is formed in each pixel region P where the gate line 4 and the data line 5 intersect, and each gate line The thin film transistor T is formed at the portion where (4) and the data line 5 intersect.

The upper substrate 2 includes a black matrix layer 7 for blocking light in portions other than the pixel region P, an R, G, and B color filter layer 8 for expressing color colors, and an image. The common electrode 9 is formed to implement the.

The thin film transistor T may include a gate electrode protruding from the gate line 4, a gate insulating film (not shown) formed on the front surface, an active layer formed on the gate insulating film above the gate electrode, and the data. And a source electrode protruding from the line 5 and a drain electrode to face the source electrode.

The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance, such as indium-tin-oxide (ITO).

In the liquid crystal display device configured as described above, the liquid crystal layer 3 positioned on the pixel electrode 6 is aligned by a signal applied from the thin film transistor T, and the liquid crystal layer 3 is aligned with the alignment degree of the liquid crystal layer 3. Accordingly, the image can be expressed by controlling the amount of light passing through the liquid crystal layer 3.

As described above, the liquid crystal panel drives the liquid crystal by an electric field applied up and down, and has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground to discharge static electricity. It is possible to prevent the destruction of the liquid crystal cell.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent.                         

Accordingly, in order to overcome the above disadvantages, a new technology, namely, a liquid crystal display device of IPS, has been proposed.

2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS.

As shown in FIG. 2, the pixel electrode 12 and the common electrode 13 are formed on the lower substrate 11 on the same plane.

In addition, the liquid crystal layer 14 formed between the lower substrate 11 and the upper substrate 15 bonded to the lower substrate 11 may be disposed between the pixel electrode 12 and the common electrode 13 on the lower substrate 11. It works by electric field.

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltages are turned on and off in the IPS mode.

That is, FIG. 3A shows an off state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, so that the phase change of the liquid crystal layer 14 does not occur. For example, the pixel electrode 12 and the common electrode 13 are basically shifted by 45 ° in the horizontal direction.

FIG. 3B is an on state in which a transverse electric field is applied to the pixel electrode 12 and the common electrode 13, and a phase shift of the liquid crystal layer 14 occurs, and is about 45 ° compared to the off state of FIG. 3A. It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 and the twist direction of the liquid crystal have a twist angle.

As described above, in the liquid crystal display of the IPS, both the pixel electrode 12 and the common electrode 13 exist on the same plane.

An advantage of the transverse electric field method is that a wide viewing angle is possible.                         

That is, when the liquid crystal display device is viewed from the front, the liquid crystal display device may be visible in the about 70 ° direction in the up / down / left / right directions.

In addition, there is an advantage that the manufacturing process is simpler and the color shift according to the viewing angle is smaller than that of the liquid crystal display device.

However, since the common electrode 13 and the pixel electrode 12 are present on the same substrate, there is a disadvantage in that transmittance and aperture ratio due to light are reduced.

In addition, there is a disadvantage in that the response time due to the driving voltage must be improved and the cell gap is made uniform because the misalign margin of the cell gap is small.

That is, the transverse electric field type liquid crystal display device has the advantages and disadvantages as described above can be selected according to the user's use.

4A and 4B are perspective views showing the operation of the liquid crystal display of the IPS in the off state and the on state, respectively.

As shown in FIG. 4A, when no transverse electric field voltage is applied to the pixel electrode 12 or the common electrode 13, the alignment direction of the liquid crystal molecules 16 is the same as that of the initial alignment layer (not shown). Is arranged.

As shown in FIG. 4B, when the transverse electric field voltage is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 to which the electric field is applied. Can be.

Hereinafter, a liquid crystal display of a conventional IPS will be described with reference to the accompanying drawings.

5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art, Figure 6a is an enlarged plan view of a liquid crystal display device of the IPS according to the prior art in the area 'A' of Figure 5, Figure 6b Fig. 6A is a structural cross sectional view of a conventional IPS liquid crystal display device along the line II ′ of 6a.

As shown in FIGS. 5, 6A, and 6B, the liquid crystal display of the conventional IPS includes a plurality of gate lines 61 arranged in one direction at regular intervals to define pixel regions on the transparent lower substrate 60. The data lines 64 are arranged at regular intervals in a direction perpendicular to the gate line 61.

In this case, the data line 64 has a zigzag shape that is bent at least once in the length of one pixel area.

A thin film transistor T is formed in each pixel region defined by the gate line 61 and the data line 64 crossing each other.

The thin film transistor T is formed on the gate electrode 61a protruding from the gate line 61, the gate insulating layer 62 formed on the front surface, and the gate insulating layer 62 on the gate electrode 61a. The active layer 63, the source electrode 64a protruding from the data line 64, and the drain electrode formed at a predetermined interval from the source electrode 64a and integrally formed with the pixel electrode 66b. 66a).

In addition, first and second common electrodes 61b and 61c are formed on the same layer as the gate line 61, wherein the first common electrode 61b crosses the pixel region in parallel with the gate line 61. A plurality of second common electrodes 61c are formed in a zigzag pixel region in parallel with the zigzag data lines 64.

At this time, the second common electrode 61c is arranged up and down symmetrically with respect to the first common electrode 61b as shown in FIG. 6A.

A passivation layer 65 is formed on the entire lower substrate 60 including the data line 64.

In the pixel region defined by the intersection of the gate line 61 and the data line 64, the pixels are arranged in a zigzag form between the second common electrodes 61c so as to be parallel to the second common electrodes 61c and have a predetermined interval. The electrodes 66b are arranged.

In this case, the pixel electrodes 66b are also arranged symmetrically with respect to the first common electrode 61b.

The pixel electrode 66b serves as a drain electrode of the thin film transistor through a contact hole.

In this case, the liquid crystal positioned between the second common electrode 61c and the pixel electrode 66b is arranged in the same direction by a transverse electric field distributed between the second common electrode 61c and the pixel electrode 66b. In the transverse electric field system, a plurality of multi-domains can be configured in a single pixel area, thereby making it possible to manufacture a liquid crystal display having a wider viewing angle.

Since the second common electrode 61c and the pixel electrode 66b are formed in a zigzag form, all of the liquid crystals positioned in one pixel can be aligned in various directions instead of in the corresponding one direction. It is possible to derive a multi-domain capable of varying the orientation direction of the liquid crystal to be oriented.

Although not shown in the drawings, the first common electrode 61b is not formed to cross the pixel region, but may be disposed outside the pixel region adjacent to the gate line 61, and at this time, the second common electrode The 61c and the pixel electrode 66b are not formed symmetrically with respect to the first common electrode 61b, but may be formed by bending several times in a zigzag shape in a pixel area parallel to each other.

Meanwhile, in the conventional transverse electric field type liquid crystal display having the above configuration, as shown in FIGS. 5 and 6B, when ionic impurities are introduced into and accumulated in the active line through the liquid crystal injection hole 56, metal and transparency Due to the difference in the work function between the dielectric material ITO, that is, the first and second common electrodes 61a and 61b and the pixel electrode 66b, DC is generated relatively large between +/− frames.

The level of DC action increases the ion trap probability and level due to the increase in the DC level relative to structures using the same metal or the same ITO.

In particular, since the last window of the last dot, that is, the blue dot, has a larger number of ions trapped in the actual opening area than the right window area in which the data line is located, the internal DC becomes larger.

The trapped ions cause a blue line light leakage phenomenon, which occurs more severely at low temperatures where the movement speed of the ions is slowed down.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a transverse electric field type liquid crystal display device and a manufacturing method thereof suitable for preventing light leakage from a blue line, which is the last dot.

According to an aspect of the present invention, there is provided a transverse electric field type liquid crystal display device comprising: a plurality of gate lines and data lines arranged on a substrate to define a pixel area; A thin film transistor formed at an intersection of the gate line and the data line; A first common electrode formed on the same layer as the gate line and arranged in parallel with the gate line; A plurality of second common electrodes connected to the first common electrodes and formed at predetermined intervals in the pixel region; A dummy data line arranged in parallel with the data line at a predetermined interval from the second common electrode of the outermost side adjacent to the liquid crystal inlet; The pixel electrode may include a pixel electrode connected to the thin film transistor and formed at a predetermined interval between the plurality of second common electrodes.

The second common electrode is formed in a zig-zag shape that is bent at least once, and the data line and the pixel electrode are formed in a zig-zag shape in parallel with the second common electrode.

The first common electrode may be formed to cross the pixel region or may be formed outside the pixel region adjacent to the gate line.

Method of manufacturing a transverse electric field type liquid crystal display device of the present invention having the configuration as described above comprises the steps of forming a plurality of gate lines in one direction on the substrate; At the same time as forming the gate line, a first common electrode is formed on the same layer in a direction parallel to the gate line, and a plurality of second common electrodes are connected to the first common electrode and have a predetermined distance in the pixel area. Forming; Forming a gate insulating film on the substrate including the gate line and the first and second common electrodes; Forming a plurality of data lines intersecting with the gate lines to define a pixel area; Forming a dummy data line to form the data line and to have a predetermined distance from the outermost second common electrode adjacent to the liquid crystal injection hole; Forming a protective film on the substrate including the data line and the dummy data line; And forming a pixel electrode on the passivation layer so as to cross the second common electrode.

The first common electrode is formed to cross the pixel region, or the first common electrode is formed outside the pixel region adjacent to the gate line.

The second common electrode, the data line and the dummy data line are formed in a zigzag shape bent at least once.

The pixel electrode is formed in a zigzag shape in parallel with the second common electrode.

The protective film is formed of any one of acrylic, polyimide, Benzo cyclobutene (BCB), oxide film, and nitride film.

The gate line and the first and second common electrodes are formed using metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W).

Hereinafter, a transverse electric field type liquid crystal display device and a manufacturing method thereof according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

First, the configuration of a transverse electric field type liquid crystal display device according to an embodiment of the present invention will be described.

7 is a plan view of a liquid crystal display of the IPS according to an embodiment of the present invention, FIG. 8A is an enlarged plan view of a liquid crystal display of the IPS according to an embodiment of the present invention in the region 'B' of FIG. 8A is a cross-sectional view of a liquid crystal display device of an IPS according to an embodiment of the present invention along the line II-II 'of FIG. 8A.

In the transverse electric field type liquid crystal display device according to the exemplary embodiment of the present invention, as shown in FIGS. 7, 8A, and 8B, in order to define pixel areas on the transparent lower substrate 90, the liquid crystal display device has a predetermined interval in one direction. A plurality of gate lines 91 are arranged, and a plurality of data lines 94a are arranged at regular intervals in a direction perpendicular to the gate lines 91.

In this case, the data line 94a has a zigzag shape that is bent at least once in the longitudinal direction of one pixel area. Although Fig. 8A shows an example of bending once, it may be broken several times more.

In addition to the last data line 94a adjacent to the liquid crystal injection hole 71 as shown in FIG. 7, a dummy data line 94b is further disposed in the last window portion of the last dot (blue dot). .

That is, the dummy data line 94b is disposed outside the active line adjacent to the liquid crystal injection hole 71.                     

In this case, the dummy data line 94b also has a zigzag shape like the data line 94a formed on the active line.

The gate line 91 and the data line 94a intersect to define a pixel region, and a thin film transistor T is formed in each cross region.

The thin film transistor T may include a gate electrode 91a protruding from the gate line 91, a gate insulating layer 92 formed on an entire surface of the lower substrate 90 including the gate electrode 91a, and the gate. The active layer 93 is formed on the gate insulating film 92 on the electrode 91a, the source electrode 94c formed to protrude from the data line 94a, and the source electrode 94c at regular intervals. And a drain electrode 96a formed integrally with the pixel electrode 96 to be formed later.

In addition, first and second common electrodes 91b and 91c are formed on the same layer as the gate line 91, where the first common electrode 91b crosses the pixel region in parallel with the gate line 91. A plurality of second common electrodes 91c are formed in a zigzag pixel region like the data line 94a.

At this time, the second common electrode 91c is arranged up and down symmetrically with respect to the first common electrode 91b, and is connected to each other.

The passivation layer 95 is formed on the entire lower substrate 90 including the data line 94a.

The pixel region defined by the intersection of the gate line 91 and the data line 94a has a zigzag shape parallel to the second common electrode 91c and is disposed between the second common electrodes 91c at regular intervals. The pixel electrodes 96 are arranged.

In this case, the pixel electrodes 96 are also arranged in a zigzag shape in a vertical symmetry with respect to the first common electrode 91b.

In addition, the pixel electrode 96 contacts the active region of the thin film transistor T through a contact hole to form a drain electrode.

The pixel electrode 96 extends to an upper end of the front gate line to form a storage electrode.

In this case, the storage structure may be configured as a hybrid storage structure (not shown) applying both a storage on gate and a storage on common.

Although not shown in the drawing, the first common electrode 91b may not be formed to cross the pixel region, and may be disposed outside the pixel region adjacent to the gate line 91. In this case, the second common electrode 91c may be disposed. ) And the pixel electrode 96 are not formed symmetrically about the first common electrode 91b, but are bent at least once in a zigzag shape in the pixel areas parallel to each other.

The upper substrate 80 includes a black matrix 81, a color filter layer 82, and an overcoat layer 83. The lower substrate 90 and the upper substrate 80 are bonded together as shown in FIG. 7. Seal material 70 is formed on the lower substrate 90 or the upper substrate 80.

The liquid crystal positioned between the second common electrode 91c and the pixel electrode 96 is arranged in the same direction by a transverse electric field distributed between the second common electrode 91c and the pixel electrode 96 to form one domain. According to the above configuration, in the transverse electric field system, a plurality of multi-domains can be configured in a single pixel area, and thus a liquid crystal display having a wider viewing angle can be manufactured.

That is, since the second common electrode 91c and the pixel electrode 96 are formed in a zigzag form, all of the liquid crystals positioned in one pixel may be aligned in various directions instead of corresponding one direction. In addition, it is possible to derive a multi-domain capable of varying the alignment direction of the liquid crystal oriented in one pixel.

Meanwhile, as described above, in the transverse electric field type liquid crystal display device having the above configuration, as shown in FIGS. 7 and 8B, ion impurities flow into and accumulate in the active region inside the active line through the liquid crystal injection hole 71. In this case, when a DC voltage higher than the first and second common electrodes 91b and 91c is applied to the dummy data line 94b, a positive potential is formed between the dummy data line 94b and the outermost second common electrode 91c. (Positive Potential) Wells form and '-' ion impurities accumulate.

When the '-' ion impurities are trapped in the potential well to some extent, a repulsion force is generated between the '-' ions, thereby reducing the probability of introducing '-' ion impurities outside the active region into the active region.

In addition, during actual driving, '-' ions are attracted to the positive potential region formed in the dummy data line 94b, thereby reducing the number of ions trapped in the actually opened region, thereby improving blue line light leakage.                     

In this case, the distance between the pixel electrode 96 and the second common electrode 91c is about 10 μm or more, and the distance between the dummy data line 94b and the outermost second common electrode 91c is about 2 μm to 3 μm. Since the electric field is more strongly applied to the dummy data line 94b and the outermost second common electrode 91c, that is, the non-opening region, more '-' ions are trapped in the potential well than the opening region. The light leakage level is relatively good compared to.

As described above, the dummy data line 94b is formed in the region adjacent to the liquid crystal inlet 71 outside the active line, thereby preventing the '-' ion impurities introduced through the liquid crystal inlet from moving into the active region.

Next, a method of manufacturing a transverse electric field type liquid crystal display device according to an embodiment of the present invention having the above configuration will be described.

9A to 9C are cross-sectional views illustrating a method of manufacturing a liquid crystal display of IPS according to an embodiment of the present invention.

As illustrated in FIG. 9A, a conductive metal is deposited on a transparent lower substrate 90, and the conductive metal is patterned by using a photo and etching process to form a gate pad having one end wide in a predetermined area (not shown). And a gate line (91 in FIG. 8A) extending in one direction from the gate pad and a gate electrode 91a protruding in one direction from the gate line 91.

The conductive metal is patterned to form a gate line 91, and at the same time, first and second common electrodes 91b and 91c are formed on the same layer as the gate line 91.

In this case, the first common electrode 91b is formed to cross the pixel area in parallel with the gate line 91.

A plurality of second common electrodes 91c are arranged in one pixel area so as to be bent at least once in a zigzag shape.

At this time, the second common electrode 91c is symmetrically connected to each other with respect to the first common electrode 91b.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).

Although not shown in the drawing, the first common electrode 91b may be formed at an outer portion of the pixel region adjacent to the gate line 91, where the second common electrode 91c is the first common electrode 91b. It is connected to each other through, and arranged a plurality of to be bent at least once in a zigzag shape in one pixel area.

Thereafter, as shown in FIG. 9B, the gate insulating layer 92 is formed on the entire surface of the lower substrate 90 on which the gate electrode 91a (see FIG. 8A) is formed.

The gate insulating layer 92 may be formed of silicon nitride (SiNx) or silicon oxide (SiO ₂ ).

Thereafter, a semiconductor layer (amorphous silicon + impurity amorphous silicon) is formed on the gate insulating layer 92.

Subsequently, the semiconductor layer is patterned by photo and etching processes to form an active layer 93 (see FIG. 8A) having an island shape on the gate electrode 91a.

Thereafter, a conductive metal is deposited on the entire surface of the lower substrate 90 on which the active layer 93 is formed, and patterned through photo and etching processes to cross the gate line 91 (see FIG. 8A) and to jig in one direction. A plurality of data lines 94a having a jag shape, a source pad (not shown) having a predetermined area at the end, and a source electrode 94c protruding in one direction from the data line 94a are formed.

In this case, the data line 94a may be formed in a zigzag shape so as to be bent at least once in one pixel area and arranged in parallel with the second common electrode 94c.

In this case, in addition to the last data line 94a adjacent to the liquid crystal injection hole 71, a dummy data line 94b is further formed in the last window portion of the last dot (blue dot).

That is, the dummy data line 94b is formed outside the active line adjacent to the liquid crystal injection hole 71.

At this time, the dummy data line 94b also has a zigzag shape in parallel with the data line 94a formed on the active line.

Next, as shown in FIG. 9C, the protective layer 95 is formed by depositing an organic insulating material on the entire surface of the lower substrate 90 on which the data line 94a and the dummy data line 94b are formed.

The protective layer 95 is formed to protect the active layer 93 from external moisture or foreign matter, and may be formed using any one of acrylic, polyimide, Benzo cyclobutene (BCB), oxide film, and nitride film. Form.

Thereafter, the protective layer 95 is selectively removed through a photo and etching process so that a predetermined portion of the active layer 93 is exposed to form a contact hole (see FIG. 8A).

Here, the gate pad and the source pad portion are also exposed when forming the contact hole.

Depositing a conductive metal on the entire surface of the lower substrate 90 including the contact hole, selectively removing the conductive metal through a photo and etching process and contacting a predetermined portion of the active layer through the contact hole to drain the electrode 96a. The pixel electrode 96 is formed to be arranged between the second common electrodes 91c at regular intervals in a zigzag form, which is bent at least once in parallel with the second common electrode 91c.

The pixel electrode 96 is arranged upside down symmetrically with respect to the first common electrode 91b.

Although not shown in the drawing, the first common electrode 91b may be formed outside the pixel region adjacent to the gate line 91, wherein the pixel electrode 96 is vertically symmetrical with respect to the first common electrode 91b. Except for the arrangement, the arrangement is the same as that of the pixel electrode 96 described above.

In this case, the pixel electrode 96 extends to the upper gate line of the front end to form the storage electrode 96b.

In addition, the storage structure may be formed as a hybrid storage structure in which both a storage on gate and a storage on common are applied, although not shown in the drawing.

Although not shown in the drawing, an alignment layer made of polyimide or an optical alignment material is formed on the entire surface of the lower substrate 90 including the pixel electrode 96 and the first and second common electrodes 91b and 91c. .

In this case, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined.

At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Thereafter, the upper substrate 80, which is a color filter array substrate having the black matrix layer 81, the color filter layer 82, and the overcoat layer 83, is prepared. (See FIG. 8B).

A seal material 70 (see FIG. 7) for bonding the lower substrate 90 and the upper substrate 80 is formed on the lower substrate 90 or the upper substrate 80.

Next, the upper substrate 80 as the color filter substrate and the lower substrate 90 as the thin film transistor array substrate are bonded to each other.

Although not shown in the drawing, an alignment layer of the same material as that of the lower substrate 90 is formed on the front surface of the upper substrate 80.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

As described above, the transverse electric field type liquid crystal display device and the method of manufacturing the same have the following effects.

The light leakage phenomenon in the blue line, which is the last dot, can be improved to improve the reliability of the IPS liquid crystal display.

Claims (14)

A plurality of gate lines and data lines intersected on the substrate to define pixel regions; A thin film transistor formed at an intersection of the gate line and the data line; A first common electrode formed on the same layer as the gate line and arranged in parallel with the gate line; A plurality of second common electrodes connected to the first common electrodes and formed at predetermined intervals in the pixel region; A dummy data line applied with a voltage higher than that of the first and second common electrodes and arranged in parallel with the data line at a predetermined distance from the outermost second common electrode formed in the pixel region adjacent to the liquid crystal injection hole; And a pixel electrode connected to the thin film transistor and having a predetermined distance between the plurality of second common electrodes. The method of claim 1, And the second common electrode is formed in a zig-zag shape bent at least once. The method of claim 1, And the data line and the pixel electrode are zigzag in parallel with the second common electrode. The method of claim 1, And the first common electrode is formed to cross the pixel area. The method of claim 1, And the second common electrode is zigzag-shaped so as to be vertically symmetrical with respect to the first common electrode. The method of claim 1, And the first common electrode is formed outside the pixel area adjacent to the gate line. The method of claim 1, And the pixel electrode extends to an upper portion of a front gate line. Forming a plurality of gate lines in one direction on the substrate; At the same time as forming the gate line, a first common electrode is formed on the same layer in a direction parallel to the gate line, and a plurality of second common electrodes are connected to the first common electrode and have a predetermined distance in the pixel area. Forming; Forming a gate insulating film on the substrate including the gate line and the first and second common electrodes; Forming a plurality of data lines intersecting with the gate lines to define a pixel area; A voltage higher than that of the first and second common electrodes is applied, and a dummy data line is formed to form the data line and to have a predetermined distance from the outermost second common electrode formed in the pixel region adjacent to the liquid crystal injection hole. Doing; Forming a protective film on the substrate including the data line and the dummy data line; And forming a pixel electrode on the passivation layer so that the second common electrode is intersected with the second common electrode. The method of claim 8, And wherein the first common electrode is formed to cross the pixel area. The method of claim 8, And the second common electrode, the data line, and the dummy data line are formed in a zigzag shape that is bent at least once so as to be symmetrical with respect to the first common electrode. The method of claim 8, And the first common electrode is formed outside the pixel region adjacent to the gate line. The method of claim 8, And the pixel electrode is zigzag in parallel with the second common electrode. The method of claim 8, The protective film is a method of manufacturing a transverse electric field type liquid crystal display device, characterized in that formed of any one of acrylic, polyimide, BCB (Benzo Cyclo Butene), oxide film, nitride film. The method of claim 8, The gate line and the first and second common electrodes are formed using a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), and the like. Method of manufacturing the device.

Images