KR20050069105A - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

The present invention provides a transverse electric field type liquid crystal display device and a method of manufacturing the same, which are suitable for achieving high opening ratio and solving problems of current leakage and capacitor generation through a black matrix layer. A first substrate and a second substrate facing each other at a predetermined interval; A plurality of gate wirings and data wirings formed vertically and horizontally on the first substrate to define pixel regions; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first interlayer insulating film formed on the first substrate including the thin film transistor; A black matrix layer formed in an island shape on the thin film transistor so as to be isolated between pixel regions; A color filter layer formed in the pixel region including the black matrix layer; A planarization film formed on an entire surface of the first substrate including the color filter layer; A common wiring and a common electrode formed on the gate wiring, the data wiring and the active region of the thin film transistor, and formed in one direction in the pixel region; A second interlayer insulating film formed on the first substrate including the common wiring and the common electrode; And a pixel electrode contacted with the drain electrode of the thin film transistor and formed at a predetermined interval between the common electrodes.

Description

Liquid crystal display device and method for manufacturing the same {Liquid Crystal Display Device and method for fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device (LCD), and more specifically, to an in-plane switching (COS) structure having an island-shaped black matrix (hereinafter referred to as IPS). The present invention relates to a liquid crystal display device and a manufacturing method thereof.

As the information society develops, the demand for display devices is increasing in various forms.In recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been developed. Various flat panel display devices have been studied, and some are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption, and mobile type such as monitor of notebook computer. In addition, it is being developed in various ways, such as a television for receiving and displaying broadcast signals, and a monitor of a computer.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.

Such a liquid crystal display device may be broadly divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates having a space and are bonded to each other; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.

The first glass substrate (TFT array substrate) may include a plurality of gate lines arranged in one direction at a predetermined interval, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, and A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each gate line and data line, and a plurality of thin films that transmit signals of the data line to each pixel electrode by being switched by signals of the gate line The transistor is formed.

The second glass substrate (color filter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, an R, G, B color filter layer for expressing color colors, and a common electrode for implementing an image. Is formed. Of course, the common electrode is formed on the first glass substrate in the transverse electric field type liquid crystal display device.

The first and second glass substrates are bonded by a sealing material having a predetermined space by a spacer and having a liquid crystal injection hole, and a liquid crystal is injected between the two substrates.

In this case, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the reality. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.

On the other hand, the driving principle of the liquid crystal display device as described above uses the optical anisotropy and polarization of the liquid crystal.

Since the liquid crystal is thin and long in structure, the liquid crystal has a direction in the arrangement of molecules, and the liquid crystal may be artificially applied to control the direction of the molecular arrangement.

Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.

Such liquid crystals may be classified into positive liquid crystals having a positive dielectric anisotropy and negative liquid crystals having a negative dielectric anisotropy according to an electrical specific classification, and liquid crystal molecules having a positive dielectric anisotropy are long axes of liquid crystal molecules in a direction in which an electric field is applied. The liquid crystal molecules arranged in parallel and having negative dielectric anisotropy are arranged perpendicularly to the direction in which the electric field is applied and the major axis of the liquid crystal molecules.

1 is an exploded perspective view illustrating a part of a general TN liquid crystal display device.

As shown in FIG. 1, the lower substrate 1 and the upper substrate 2 bonded to each other with a predetermined space, and the liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 are composed of. It is.

More specifically, the lower substrate 1 has a plurality of gate lines 4 arranged in one direction at regular intervals to define the pixel region P, and in a direction perpendicular to the gate lines 4. A plurality of data lines 5 are arranged at regular intervals, and a pixel electrode 6 is formed in each pixel region P where the gate line 4 and the data line 5 intersect, and each gate line The thin film transistor T is formed at the portion where (4) and the data line 5 intersect.

The upper substrate 2 includes a black matrix layer 7 for blocking light in portions other than the pixel region P, an R, G, and B color filter layer 8 for expressing color colors, and an image. The common electrode 9 is formed to implement the.

The thin film transistor T may include a gate electrode protruding from the gate line 4, a gate insulating film (not shown) formed on the front surface, an active layer formed on the gate insulating film above the gate electrode, and the data. And a source electrode protruding from the line 5 and a drain electrode to face the source electrode.

The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance, such as indium-tin-oxide (ITO).

In the liquid crystal display device configured as described above, the liquid crystal layer 3 positioned on the pixel electrode 6 is aligned by a signal applied from the thin film transistor T, and the liquid crystal layer 3 is aligned with the alignment degree of the liquid crystal layer 3. Accordingly, the image can be expressed by controlling the amount of light passing through the liquid crystal layer 3.

As described above, the liquid crystal panel drives the liquid crystal by an electric field applied up and down, and has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground to discharge static electricity. It is possible to prevent the destruction of the liquid crystal cell.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, in order to overcome the above disadvantages, a new technology, namely, a liquid crystal display device of IPS, has been proposed.

2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS.

As shown in FIG. 2, the pixel electrode 12 and the common electrode 13 are formed on the lower substrate 11 on the same plane.

In addition, the liquid crystal layer 14 formed between the lower substrate 11 and the upper substrate 15 bonded to the lower substrate 11 may be disposed between the pixel electrode 12 and the common electrode 13 on the lower substrate 11. It works by electric field.

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltages are turned on and off in the IPS mode.

That is, FIG. 3A shows an off state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, so that the phase change of the liquid crystal layer 14 does not occur. For example, the pixel electrode 12 and the common electrode 13 are basically 45 degrees in the horizontal direction.

FIG. 3B is an on state in which a lateral electric field is applied to the pixel electrode 12 and the common electrode 13, and a phase shift of the liquid crystal layer 14 occurs, and is about 45 mA compared to the off state of FIG. 3A. It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 and the twist direction of the liquid crystal have a twist angle.

As described above, in the liquid crystal display of the IPS, both the pixel electrode 12 and the common electrode 13 exist on the same plane.

An advantage of the transverse electric field method is that a wide viewing angle is possible.

That is, when the liquid crystal display device is viewed from the front, the liquid crystal display device may be visible in the about 70 ° direction in the up / down / left / right directions.

In addition, there is an advantage that the manufacturing process is simpler and the color shift according to the viewing angle is smaller than that of the liquid crystal display device.

However, since the common electrode 13 and the pixel electrode 12 are present on the same substrate, there is a disadvantage in that transmittance and aperture ratio due to light are reduced.

In addition, there is a disadvantage in that the response time due to the driving voltage must be improved and the cell gap is made uniform because the misalign margin of the cell gap is small.

That is, the transverse electric field type liquid crystal display device has the advantages and disadvantages as described above can be selected according to the user's use.

4A and 4B are perspective views showing the operation of the liquid crystal display of the IPS in the off state and the on state, respectively.

As shown in FIG. 4A, when no transverse electric field voltage is applied to the pixel electrode 12 or the common electrode 13, the alignment direction of the liquid crystal molecules 16 is the same as that of the initial alignment layer (not shown). Is arranged.

As shown in FIG. 4B, when the transverse electric field voltage is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 to which the electric field is applied. Can be.

Hereinafter, a liquid crystal display of a conventional transverse electric field method (IPS) will be described with reference to the accompanying drawings.

FIG. 5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art, and FIG. 6 is a cross-sectional view taken along lines II ′ and II-II ′ and III-III ′ of FIG. 5.

In the conventional IPS liquid crystal display, as shown in FIGS. 5 and 6, the gate wiring 31 arranged in one direction on the transparent lower substrate 30 and the gate electrode protruding from one side of the gate wiring 31 are provided. A gate insulating film 32 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 30 including the gate electrode 31a, and the gate insulating film 32 on the gate electrode 31a. An active layer 33 formed in an island shape on the top, a source electrode 34a protruding from the data line 34 and overlapping an upper portion of the active layer 33, and a constant with the source electrode 34a. A drain electrode 34b spaced apart from each other and overlapping the other side of the active layer 33, and a first interlayer insulating layer 35 formed on the entire surface of the lower substrate 30 including the source electrode 34a and the drain electrode 34b. Of the gate wiring 31, the data wiring 34, and the active layer 33. A first interlayer insulating film including a black matrix layer 36 formed on the first interlayer insulating layer 35 so as to cover the upper portion, and a black matrix layer 36 so as to overlap the data wiring 34. 35, R, G, and B color filter layers 37 formed in the upper pixel areas, the planarization film 38 formed on the color filter layer 37, the gate wirings 31 and the data wirings ( 34 and the common wiring 39a and the common electrode 39b overlapping the upper portion of the active layer 33 (particularly, the channel region) and formed in one direction in the pixel region, and the common wiring 39a and the common electrode 39b. The second interlayer insulating film 40 formed on the planarization film 38 including the contact layer 41, a contact hole 41 formed to expose a region of the drain electrode 34b, and a drain electrode 34b through the contact hole 41. ) And overlap the upper portion of the gate wiring 31 at the front end, and have a predetermined interval on both sides of the common electrode 39b of the pixel region. Is composed of the pixel electrode 42 is formed.

The common wiring 39a is formed along the gate wiring 31, and the common electrode 39b is formed in a direction parallel to the data wiring 34 on the data wiring 34 and in the pixel area.

The contact hole 41 is formed by etching the second interlayer insulating film 40, the planarization film 38, the color filter layer 37, and the first interlayer insulating film 35 so that one region of the drain electrode 34b is exposed. .

The black matrix layer 36 is connected to the data line 34, the gate line 31, and the thin film transistor TFT so as to be overlapped.

As described above, when the black matrix layer is formed wide on the data wiring and the gate wiring, a signal may be weakened through the black matrix layer due to the low resistance of the black matrix layer, resulting in a weakening of the data signal.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to achieve a high opening ratio and at the same time to solve the problem of current leakage or capacitor generation through the black matrix layer, a transverse electric field type (IPS) liquid crystal display device And a method for producing the same.

In order to achieve the above object, a transverse electric field type liquid crystal display device of the present invention comprises: a first substrate and a second substrate facing each other at a predetermined interval; A plurality of gate wirings and data wirings formed vertically and horizontally on the first substrate to define pixel regions; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first interlayer insulating film formed on the first substrate including the thin film transistor; A black matrix layer formed in an island shape on the thin film transistor so as to be isolated between pixel regions; A color filter layer formed in the pixel region including the black matrix layer; A planarization film formed on an entire surface of the first substrate including the color filter layer; A common wiring and a common electrode formed on the gate wiring, the data wiring and the active region of the thin film transistor, and formed in one direction in the pixel region; A second interlayer insulating film formed on the first substrate including the common wiring and the common electrode; And a pixel electrode contacted with the drain electrode of the thin film transistor and formed at a predetermined interval between the common electrodes.

Characterized in that the alignment film is provided on the second substrate.

The black matrix layer may be further formed on the gate wiring and / or the data wiring so as to be isolated from the black matrix layer on the thin film transistor.

The black matrix layer and the color filter layer may be different from each other so that the black matrix layer is formed on the color filter layer.

The common wiring is formed on the gate wiring and the active layer, and the common electrode is formed in a direction parallel to the data wiring on the data wiring and in the pixel area.

The common wiring and the common electrode may be formed of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W).

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device according to an embodiment of the present invention. A method of manufacturing a semiconductor device, the method comprising: forming a first interlayer insulating film on the first substrate including the thin film transistor; Forming a black matrix layer in an island shape on the thin film transistor; Forming a color filter layer in the pixel region including the black matrix layer; Forming a planarization film on an entire surface of the first substrate including the color filter layer; Forming a common wiring and a common electrode on the gate wiring, the data wiring, and the active layer, the common wiring and the common electrode being arranged in one direction in the pixel region; And forming a pixel electrode in contact with the drain electrode of the thin film transistor and having a predetermined distance between the common electrode.

And forming the color filter layer earlier than the black matrix layer.

The common line may be formed to overlap the gate line, and the common electrode may be formed to overlap the data line and the active layer of the thin film transistor, and to be formed in the pixel area to be parallel to the data line. It features.

When forming the pixel electrode, the storage electrode is formed by extending to overlap the upper portion of the gate wiring of the front end.

The black matrix layer may further include forming an island shape on the gate line and / or the data line so as to be isolated from the black matrix layer on the thin film transistor.

Hereinafter, a transverse electric field type (IPS) liquid crystal display device and a manufacturing method thereof according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

First, a transverse electric field (IPS) liquid crystal display device according to an embodiment of the present invention will be described.

FIG. 7 is a plan view of a liquid crystal display device of a transverse electric field type (IPS) device according to a first embodiment of the present invention, and FIG. 8 is a structure in which lines IV-IV ', V-V', and VI-VI 'of FIG. 7 are cut out. It is a cross section.

10 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a second embodiment of the present invention.

As shown in FIG. 7 and FIG. 8, the IPS liquid crystal display according to the first embodiment of the present invention includes a gate wiring 61 arranged in one direction on a transparent lower substrate 60 and the gate wiring 61. A gate electrode 61a protruding from one side of the gate electrode, a gate insulating layer 62 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 60 including the gate electrode 61a, and an upper portion of the gate electrode 61a An active layer 63 formed in an island shape on the gate insulating layer 62, a source electrode 64a protruding from the data line 64, and overlapping an upper portion of one side of the active layer 63; A first electrode formed on the entire surface of the lower substrate 60 including the drain electrode 64b spaced apart from the source electrode 64a at a predetermined interval and overlapping the other side of the active layer 63 and the source electrode 64a and the drain electrode 64b. The interlayer insulating film 65 and the phase including the thin film transistor The black matrix layer 66 formed on the first interlayer insulating layer 65 in an island shape so as to cover a portion of the upper portion of the gate wiring 61, and the black matrix layer overlapping the upper portion of the data wiring 64. A color filter layer 67 of R, G, and B formed in each pixel region on the first interlayer insulating film 65 including the 66, a flattening film 68 formed flat on the color filter layer 67, The common wiring 69a and the common electrode 69b overlapping the gate wiring 61, the data wiring 64, and the active layer 63 (particularly, the channel region) and formed in one direction in the pixel region, and the common wiring. A second interlayer insulating film 70 formed on the planarization film 68 including the 69a and the common electrode 69b, a contact hole 71 formed to expose one region of the drain electrode 64b, and the contact The common electrode 69b of the pixel region is contacted with the drain electrode 64b through the hole 71 and overlaps the upper portion of the gate wiring 61. Side is composed of the pixel electrode 72 is formed with a predetermined interval.

In addition, an alignment film (not shown) made of polyimide is formed on the second interlayer insulating film 70.

In this case, the black matrix layer 66 is formed in an island shape on the gate wiring 61 including the active layer (particularly, the channel region) except for the data wiring 64.

Although not shown in the drawing, the black matrix layer 66 may be formed only on the thin film transistor except for the gate line 61 and the data line 64. Thus, the black matrix layer 66 may be formed on the gate line ( The reason why the 61 and the data wiring 64 do not need to be formed is that the common wiring 69a and the common electrode 69b formed on the gate wiring 61 and the data wiring 64 may take over. Because.

As described above, since the black matrix layers 66 between the pixel region and the pixel region are not connected to each other, the total occupied area of the black matrix layer 66 may be reduced, and the black matrix may be disposed on the data line 64. Since the layer 66 is not formed, the resistance of the black matrix layer 66 may not be high enough to solve a problem of current leakage or capacitor generation.

In other words, if the resistance of the black matrix layer is small, the same structure as that of the resistor connected around the electrode causes the current to flow out of the black matrix layer, which causes a problem that the voltage applied to the electrode decreases. This problem can be solved by not forming the black matrix layer 66 on the upper portion (64).

The black matrix layer 66 and the color filter layer 67 may be formed by changing layers from each other. That is, a black matrix layer may be formed on the color filter layer.

The common wiring 69a is formed along the gate wiring 61, and the common electrode 69b is formed in the direction parallel to the data wiring 64 above the data wiring 64 and in the pixel area.

The common wiring 69a and the common electrode 69b are made of metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W).

The planarization film 68 may have a thickness of about 2 μm to 3 μm in order to prevent a delay of signals of the gate line 61 and the data line 64 by the common line 69a and the common electrode 69b. It is formed of at least one of acryl, polyimide, BCB (Benzo Cyclo Butene), an oxide film, and a nitride film which has, and the surface is flat.

The contact hole 71 is formed by etching the second interlayer insulating film 70, the planarization film 68, the color filter layer 67, and the first interlayer insulating film 65 so that one region of the drain electrode 64b is exposed. will be.

In addition, an alignment layer (not shown) is stacked on the lower substrate 60 formed as described above and the upper substrate 80 corresponding to the lower substrate 60.

In the above, the black matrix layer 66 may be formed in an island shape on the upper portion of the data line 64 to further improve the light leakage problem, as in the second embodiment of the present invention illustrated in FIG. 10. have. In this case, the black matrix layers 66 formed on the data line 64 and the gate line 61 are separated from each other without being connected to each other.

Next, a method of manufacturing a transverse electric field type (IPS) liquid crystal display device according to an embodiment of the present invention will be described.

9A to 9D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention.

In the method of manufacturing a transverse electric field type liquid crystal display device according to a first embodiment of the present invention, as shown in FIG. 9A, a conductive metal is deposited on a transparent lower substrate 60, and a photo and etching process is performed. By patterning the conductive metal, a gate pad (not shown) having one end widened to a predetermined area, a gate wiring 61 extending in one direction from the gate pad, and protruding in one direction from the gate wiring 61 are formed. The gate electrode 61a is formed.

Thereafter, a gate insulating layer 62 is formed on the entire surface of the lower substrate 60 on which the gate electrode 61a is formed.

The gate insulating layer 62 may be formed of silicon nitride (SiNx) or silicon oxide (SiO ₂ ).

Subsequently, first and second semiconductor layers (amorphous silicon and impurity amorphous silicon) (not shown) are formed on the gate insulating layer 62.

Subsequently, the first and second semiconductor layers are patterned by photo and etching processes to form an active layer 63 having an island shape on the gate electrode 61a.

Subsequently, a conductive metal is deposited on the entire surface of the lower substrate 60 on which the active layer 63 is formed, and patterned through photo and etching processes to cross the gate line 61 to define a pixel region 64. A source pad (not shown) having a predetermined area at the end, a source electrode 64a protruding in one direction from the data line 64, and a source electrode 64a separated from the source electrode 64a by a predetermined distance. A drain electrode 64b is formed.

When forming the data line 64, the ohmic contact layer 63a is formed by overetching the second semiconductor layer so that the first semiconductor layer is exposed.

Thereafter, as shown in FIG. 9B, the first interlayer insulating film 65 is formed on the entire surface of the lower substrate 60 on which the data lines 64 are formed.

The first interlayer insulating layer 65 may be formed using at least one of acryl, polyimide, Benzo cyclobutene (BCB), oxide film, and nitride film.

Next, after the light shielding layer is deposited on the first interlayer insulating film 65, a black matrix layer 66 is formed on the gate wiring 61 including the channel region of the thin film transistor so as to be isolated in an island shape. .

At this time, although not shown in the drawing, the black matrix layer 66 may be formed only on the thin film transistor except for the gate line 61 and the data line 64.

Subsequently, as shown in FIG. 9C, color filter layers 67 of R, G, and B are formed in each pixel area so as to overlap the upper portion of the data line 64.

The black matrix layer 66 and the color filter layer 67 may be formed in a reversed order. That is, after forming the color filter layer first, the black matrix layer may be formed on the color filter layer.

Subsequently, an insulating film is deposited on the entire surface including the color filter layer 67, and then the chemical mechanical polishing process is performed on the insulating film to form the planarization film 68.

Next, a conductive metal is deposited on the planarization film 68 and patterned through photo and photolithography to form a common wiring 69a and a common electrode 69b.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).

In this case, the common wiring 69a is formed to overlap the gate wiring 61, and the common electrode 69b is formed to overlap the data wiring 64 and the active layer 63, and the data wiring 61 is overlapped. Are formed in the pixel region so as to have a direction parallel to the.

Thereafter, after forming the second interlayer insulating film 70 on the entire surface of the lower substrate 60 including the common wiring 69a and the common electrode 69b, the contact hole 71 is exposed so that one region of the drain electrode 64b is exposed. To form.

The second interlayer insulating film 70 is formed using any one of an oxide film and a nitride film.

When the contact hole 71 is formed, although not shown in the drawing, the gate pad and the source pad portion are also exposed.

Next, as shown in FIG. 9D, a transparent conductive film is deposited on the entire surface of the lower substrate 60 including the contact hole 71, and the transparent conductive film is selectively removed through photo and etching processes. Contact with the drain electrode 64b, overlap the upper portion of the gate wiring 61 at the front end, and have a predetermined interval on both sides of the common electrode 69b of the pixel region.

At this time, the transparent conductive film contacting the drain electrode 64b through the contact hole 71 and having a predetermined interval on both sides of the common electrode 69b of the pixel region forms the pixel electrode 72 and the upper portion of the upper gate wiring 61. The transparent conductive film overlapped with each other forms a storage electrode 72a.

In this case, the pixel electrode 72 is connected to the storage electrode 72a.

The storage structure is a hybrid storage structure that employs both a storage on gate and a storage on common.

Although not shown in the drawing, an alignment layer made of polyimide or a photo-alignment material is formed on the entire surface of the lower substrate 60 including the pixel electrode 72, the common wiring 69a, and the common electrode 69b.

Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined.

At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Thereafter, the upper substrate 80 is prepared, and a sealing material (not shown) for bonding the lower substrate 60 and the upper substrate 80 is formed on the lower substrate 60 or the upper substrate 80.

Subsequently, the upper substrate 80 and the lower substrate 60 which is a thin film transistor array substrate are bonded to each other.

Although not shown in the drawing, an alignment layer of the same material as the lower substrate 60 is formed on the front surface of the upper substrate 80.

Next, in the method of manufacturing the IPS liquid crystal display device according to the second embodiment of the present invention, the black matrix layer 66 is island-shaped on the gate wiring 61 including the active region (especially the channel region). Is formed in the same manner as the manufacturing method of the IPS liquid crystal display device according to the first embodiment of the present invention, except that the black matrix layer 66 is formed on the data line 64 in an island shape. .

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.

Therefore, the technical scope of the present invention is not limited to the contents described in the above embodiments, but may be modified within the scope obvious to those skilled in the art.

The liquid crystal display of the transverse electric field system (IPS) and the manufacturing method thereof according to the present invention having the above configuration have the following effects.

Since the occupied area of the entire black matrix layer is reduced, the problem of current leakage or capacitor generation caused by the black matrix layer's resistance not being high enough can be solved.

1 is an exploded perspective view showing a part of a typical TN liquid crystal display device

Figure 2 is a schematic cross-sectional view showing a liquid crystal display device of a typical transverse electric field (IPS)

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltage on / off is performed in IPS mode.

4A and 4B are perspective views showing the operation of the IPS mode LCD in the off and on states, respectively.

5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art;

FIG. 6 is a cross-sectional view taken along line II ′ and II-II ′ and III-III ′ of FIG. 5.

7 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention;

FIG. 8 is a cross-sectional view taken along line IV-IV ', V-V', and VI-VI 'of FIG.

9A to 9D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention.

10 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to a second embodiment of the present invention.

Explanation of symbols on main parts of drawing

60: lower substrate 61: gate wiring

61a: gate electrode 62: gate insulating film

63 active layer 63a ohmic contact layer

64: data wiring 64a, 64b: source, drain electrode

65: first interlayer insulating film 66: black matrix layer

67 color filter layer 68 planarization film

69a: common wiring 69b: common electrode

70 second interlayer insulating film 71 contact hole

72 pixel electrode 72a: storage electrode

Claims (11)

A first substrate and a second substrate facing each other at a predetermined interval; A plurality of gate wirings and data wirings formed vertically and horizontally on the first substrate to define pixel regions; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first interlayer insulating film formed on the first substrate including the thin film transistor; A black matrix layer formed in an island shape on the thin film transistor so as to be isolated between pixel regions; A color filter layer formed in the pixel region including the black matrix layer; A planarization film formed on an entire surface of the first substrate including the color filter layer; A common wiring and a common electrode formed on the gate wiring, the data wiring and the active region of the thin film transistor, and formed in one direction in the pixel region; A second interlayer insulating film formed on the first substrate including the common wiring and the common electrode; And a pixel electrode contacted with the drain electrode of the thin film transistor and formed with a predetermined distance between the common electrode. The method of claim 1, An alignment film is provided on the second substrate, the transverse electric field type liquid crystal display device. The method of claim 1, And the black matrix layer is further formed on the gate wiring and / or the data wiring so as to be isolated from the black matrix layer on the thin film transistor. The method of claim 1, And the black matrix layer and the color filter layer are different from each other so that a black matrix layer is formed on the color filter layer. The method of claim 1, And wherein the common line is formed on the gate line and the active layer, and the common electrode is formed in a direction parallel to the data line on the data line and in the pixel area. The method of claim 1, And the common wiring and the common electrode are made of metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), and the like. In a method of manufacturing a transverse electric field type liquid crystal display device having a gate wiring and a data wiring arranged on a first substrate to define a pixel region, and a thin film transistor formed in the crossing region, Forming a first interlayer insulating film on the first substrate including the thin film transistor; Forming a black matrix layer in an island shape on the thin film transistor; Forming a color filter layer in the pixel region including the black matrix layer; Forming a planarization film on an entire surface of the first substrate including the color filter layer; Forming a common wiring and a common electrode on the gate wiring, the data wiring, and the active layer, the common wiring and the common electrode being arranged in one direction in the pixel region; And forming a pixel electrode in contact with the drain electrode of the thin film transistor and having a predetermined distance between the common electrode. The method of claim 7, wherein And forming the color filter layer earlier than the black matrix layer. The method of claim 7, wherein The common line may be formed to overlap the gate line, and the common electrode may be formed to overlap the data line and the active layer of the thin film transistor, and to be formed in the pixel area to be parallel to the data line. A method of manufacturing a transverse electric field type liquid crystal display device. The method of claim 7, wherein When the pixel electrode is formed, the storage electrode is formed by extending to overlap the upper portion of the gate wiring of the front end. The method of claim 7, wherein The black matrix layer may further include forming an island shape on the gate line and / or the data line so as to be isolated from the black matrix layer on the thin film transistor. Manufacturing method.