KR20040000825A - Method for fabricating inplane switching mode liquid crystal display device - Google Patents

Abstract

PURPOSE: A method for manufacturing an in-plane switching mode liquid crystal display is provided to reduce a driving voltage of a liquid crystal layer by reducing additional capacitance between pixel electrodes and common electrodes. CONSTITUTION: A first substrate(51) and a second substrate are provided. Gate lines and data lines that cross each other for defining pixel areas are formed on the first substrate. Thin film transistors are formed at crossing points of the gate lines and the data lines. A plurality of pixel electrodes(58) and common electrodes(53) are crosswise formed at the pixel area at a certain gap. A passivation film(59) is formed only on the thin film transistors by using a printing method. A liquid crystal layer is formed between the first substrate and the second substrate.

Description

Method for manufacturing a transverse electric field liquid crystal display device {METHOD FOR FABRICATING INPLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display, and more particularly, to a method of manufacturing a liquid crystal display device of an in-plane switching (hereinafter referred to as IPS) suitable for extending the driving area and simplifying the process. It is about.

As the information society develops, the demand for display devices is increasing in various forms.In recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been developed. Various flat panel display devices have been studied, and some are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness and low power consumption. In addition, various developments have been made for televisions for receiving and displaying broadcast signals, monitors for computers, and the like.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.

Such a liquid crystal display device may be broadly divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates having a space and are bonded to each other; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.

The first glass substrate (TFT array substrate) may include a plurality of gate wirings arranged in one direction at a predetermined interval, a plurality of data wirings arranged at regular intervals in a direction perpendicular to the respective gate wirings, and A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each of the gate wirings and the data wirings and a plurality of thin films that transmit signals of the data wirings to the pixel electrodes by being switched by signals of the gate wirings The transistor is formed.

The second glass substrate (color filter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, an R, G, and B color filter layer for expressing color colors, and a common electrode for implementing an image. Is formed. Of course, in the transverse electric field type liquid crystal display device, the common electrode is formed on the first glass substrate.

The first and second glass substrates are bonded by an actual material having a predetermined space and a liquid crystal injection hole by a spacer, and a liquid crystal is injected between the two substrates.

In this case, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the reality. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.

On the other hand, the driving principle of the liquid crystal display device as described above uses the optical anisotropy and polarization of the liquid crystal.

Since the liquid crystal is thin and long in structure, the liquid crystal has a direction in the arrangement of molecules, and the liquid crystal may be artificially applied to control the direction of the molecular arrangement.

Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.

Such liquid crystals may be classified into positive liquid crystals having positive dielectric anisotropy and negative liquid crystals having negative dielectric anisotropy according to an electrical specific classification. The liquid crystal molecules arranged in parallel and having a negative dielectric anisotropy are arranged in a direction perpendicular to the direction in which the electric field is applied and the long axis of the liquid crystal molecules.

1 is an exploded perspective view illustrating a part of a general TN liquid crystal display device.

As shown in FIG. 1, the lower substrate 1 and the upper substrate 2 bonded to each other with a predetermined space, and the liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 are composed of. It is.

More specifically, the lower substrate 1 has a plurality of gate lines 4 arranged in one direction at regular intervals to define the pixel region P, and in a direction perpendicular to the gate lines 4. A plurality of data lines 5 are arranged at regular intervals, and pixel electrodes 6 are formed in each pixel region P where the gate lines 4 and the data lines 5 intersect, and each of the gate lines The thin film transistor T is formed at the portion where (4) and the data wiring 5 intersect.

The upper substrate 2 includes a black matrix layer 7 for blocking light in portions other than the pixel region P, an R, G, and B color filter layer 8 for expressing color colors, and an image. The common electrode 9 is formed to implement the.

The thin film transistor T may include a gate electrode protruding from the gate line 4, a gate insulating film (not shown) formed on a front surface, an active layer formed on the gate insulating film above the gate electrode, and the data. A source electrode protruding from the wiring 5 and a drain electrode are provided so as to face the source electrode.

The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance, such as indium-tin-oxide (ITO).

In the liquid crystal display device configured as described above, the liquid crystal layer 3 positioned on the pixel electrode 6 is aligned by a signal applied from the thin film transistor T, and the liquid crystal layer 3 is aligned with the alignment degree of the liquid crystal layer 3. Accordingly, the image can be expressed by adjusting the amount of light passing through the liquid crystal layer 3.

As described above, the liquid crystal panel drives the liquid crystal by an electric field applied up and down, and has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground to discharge static electricity. It is possible to prevent the destruction of the liquid crystal cell.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, in order to overcome the above disadvantages, a new technology, namely, a liquid crystal display device of IPS, has been proposed.

2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS.

As shown in FIG. 2, the pixel electrode 12 and the common electrode 13 are formed on the lower substrate 11 on the same plane.

In addition, the liquid crystal layer 14 formed between the lower substrate 11 and the upper substrate 15 bonded to the lower substrate 11 may be disposed between the pixel electrode 12 and the common electrode 13 on the lower substrate 11. It works by electric field.

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltages are turned on and off in the IPS mode.

That is, FIG. 3A shows an off state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, so that the phase change of the liquid crystal layer 14 does not occur. For example, the pixel electrode 12 and the common electrode 13 are basically shifted by 45 ° in the horizontal direction.

FIG. 3B is an on state in which a transverse electric field is applied to the pixel electrode 12 and the common electrode 13, and a phase shift of the liquid crystal layer 14 occurs, and is about 45 ° compared to the off state of FIG. 3A. It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 and the twist direction of the liquid crystal have a twist angle.

As described above, in the horizontal electric field type liquid crystal display, both the pixel electrode 12 and the common electrode 13 exist on the same plane.

An advantage of the transverse electric field method is that a wide viewing angle is possible. That is, when the liquid crystal display device is viewed from the front, the liquid crystal display device may be visible in the up / down / left / right directions at about 70 °.

In addition, the manufacturing process is simpler than the commonly used liquid crystal display device, and there is an advantage of less color shift according to the viewing angle.

However, since the common electrode 13 and the pixel electrode 12 exist on the same plane, there is a disadvantage in that transmittance and aperture ratio due to light are reduced.

In addition, there is a disadvantage in that the response time due to the driving voltage must be improved and the cell gap is made uniform because the misalign margin of the cell gap is small.

That is, the liquid crystal display of the IPS mode has the advantages and disadvantages as described above can be selected according to the user's use.

4A and 4B are perspective views showing the operation of the IPS mode liquid crystal display device in the off state and the on state, respectively.

As shown in FIG. 4A, when no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, the liquid crystal molecules array direction 16 is the same as that of the initial alignment layer (not shown). Are arranged.

As shown in FIG. 4B, when the transverse electric field is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 in which the electric field is applied. have.

Hereinafter, a liquid crystal display of a conventional IPS will be described with reference to the accompanying drawings.

5 is a plan view showing a liquid crystal display of a conventional IPS.

As shown in FIG. 5, in order to define the pixel region P on the transparent lower substrate 31, a plurality of gate lines 22 are arranged in one direction at regular intervals and perpendicular to the gate lines 22. A plurality of data lines 21 are arranged at regular intervals in one direction.

The common wiring 25 is arranged in the pixel region P in parallel with the gate wiring 22, and the thin film transistor is formed in each pixel region P defined by crossing the gate wiring 22 and the data wiring 21. (T) is formed.

In the pixel region P, a plurality of pixel electrodes 39 are connected at regular intervals in parallel with the data lines 21 and connected at one end thereof to the drain electrode 38 of the thin film transistor T. In the pixel region P, a plurality of common electrodes 41 protruding from the common wiring 25 are formed.

The thin film transistor T is formed on the gate electrode 40 protruding from the gate wiring 22, the gate insulating film (not shown) formed on the front surface, and the gate insulating film on the gate electrode 40. The active layer 33 and the source electrode 37 protruding from the data line 21 and the drain electrode 38 formed at regular intervals from the source electrode 37 are formed.

FIG. 6 is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along line II of FIG. 5.

As shown in FIG. 6, a gate electrode 40 protruding from the gate wiring 22 in a predetermined region on the transparent lower substrate 31 and a common electrode having a predetermined distance from the gate electrode 40 are formed. A gate insulating film 32 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 31 including the gate electrode 40, and the gate insulating film while being corresponding to the gate electrode 40. An active layer 33 formed in an island shape on the 32 and a source electrode 37 and the source formed to protrude from the data line 25 in FIG. 5 while a predetermined portion overlaps the active layer 33. A drain electrode 38 and a pixel electrode 39 formed at regular intervals from the electrode 37 and a passivation layer 34 formed of a material made of SiNx or SiOx on the entire surface of the lower substrate 31.

The common electrode 39 in the pixel region is connected to the common wiring 25, and the pixel electrode 39 is connected to the drain electrode 38 of the thin film transistor formed on the active layer 33.

Further, an alignment film (not shown) made of polyimide is formed on the passivation film 34.

In addition, the upper substrate 24 corresponding to the lower substrate 31 formed as described above includes a black matrix layer 26 for preventing light leakage and color filter elements of R, G, and B for implementing colors. The color filter layer 27 and the overcoat layer 28 are laminated | stacked one by one.

7A to 7D are cross-sectional views illustrating a method of manufacturing a conventional transverse electric field type liquid crystal display device taken along line II of FIG. 5.

As shown in FIG. 7A, a conductive metal is deposited on the transparent lower substrate 31, and the gate wiring 22 (FIG. 5) extending in one direction through a photo and etching process and protrudes from the gate wiring 22. A common wiring (25 in FIG. 5) having a predetermined distance from the gate electrode 40 and the gate electrode 40 and in the same direction as the gate wiring 22, and a common electrode protruding from both sides of the common wiring 25. To form 41.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).

As shown in FIG. 7B, a gate insulating layer 32 is formed on the entire surface of the lower substrate 31 including the gate electrode 40 and the common electrode 41, and an active layer (eg, an active layer) is formed on the gate insulating layer 32. 33).

Here, the gate insulating layer 32 may use a silicon nitride layer (SiNx) or a silicon oxide layer (SiO ₂ ), and the active layer 33 may be a stack of amorphous silicon and amorphous silicon containing impurities, although not shown in the drawing. It is structured.

Next, the active layer 33 is selectively removed through a photo and etching process to form an active layer 33 having an island shape on the gate insulating layer 32 on the gate electrode 40.

As illustrated in FIG. 7C, a conductive metal is deposited on the entire surface of the lower substrate 31 including the active layer 33, and source and drain electrodes 37 and spaced apart at predetermined intervals through photo and etching processes. 38 and pixel electrodes 39 are formed, respectively.

The source electrode 37 and the drain electrode 38 may be formed on the active layer 33, and the pixel electrode 39 may be predetermined with the common electrode 41 on the gate insulating layer 32. Form spaced apart.

The drain electrode 38 and the pixel electrode 39 are electrically connected to each other.

As shown in FIG. 7D, the passivation layer 34 is formed on the entire surface of the lower substrate 31.

The protective layer 34 is formed to protect the active layer 33 from external moisture or foreign matter.

Subsequently, an alignment layer (not shown) is formed on the entire surface of the lower substrate 31 including the passivation layer 34.

After the process is not shown in the drawings, the color filter element of R, G, B to implement a black matrix layer and color to prevent the leakage of light on the upper substrate corresponding to the lower substrate 31 formed as described above A color filter layer and an overcoat layer formed of a lamination are sequentially formed, and a liquid crystal layer is formed between the lower substrate 31 and the upper substrate.

As described above, the IPS liquid crystal display has a structure in which the common electrode 41 and the pixel electrode 39 are formed on the same substrate 31, and have a great advantage in improving the viewing angle.

However, the above-described conventional liquid crystal display of IPS and its manufacturing method have the following problems.

That is, there is an additional capacitance by the protective film formed between the pixel electrode and the common electrode and an additional capacitance on the gate insulating film, so that high voltage is applied to the liquid crystal layer in consideration of such additional capacitance in order to smoothly drive the liquid crystal molecules. do.

In addition, in order to solve the above problem, the protective film formed on the portion except the region where the thin film transistor is formed in the pixel region can be selectively removed, which is complicated by the addition of the process and increases the manufacturing cost.

The present invention has been made to solve the conventional problems as described above, by using a print method to selectively form a protective film only on the upper portion of the thin film transistor to simplify the process and lower the drive voltage for driving the liquid crystal It is an object of the present invention to provide a method for manufacturing an electric field type liquid crystal display device.

1 is an exploded perspective view showing a part of a typical TN liquid crystal display device

Figure 2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltage on / off is performed in IPS mode.

4A and 4B are perspective views showing the operation of the IPS mode LCD in the off and on states, respectively.

5 is a plan view showing a liquid crystal display of a conventional IPS

6 is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along the line I-I of FIG.

7A to 7D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a conventional IPS according to line II of FIG. 5.

8A and 8D are cross-sectional views illustrating a method of manufacturing an IPS liquid crystal display device according to the present invention.

9A and 9B are schematic views for explaining a gravure printing method and an offset-set gravure printing method used in the present invention.

Explanation of symbols for the main parts of the drawings

51: lower substrate 52: gate electrode

53 common electrode 54 gate insulating film

55 active layer 56 source electrode

57: drain electrode 58: pixel electrode

59: protective film 60: nozzle

According to an aspect of the present invention, there is provided a method of manufacturing a transverse electric field type liquid crystal display device, including preparing a first substrate and a second substrate, and gates intersecting to define pixel regions on the first substrate. Forming a wiring and a data wiring, forming a thin film transistor at an intersection point of the gate wiring and the data wiring, and staggering a plurality of pixel electrodes and a common electrode at regular intervals in the pixel region; And forming a protective layer on the upper portion of the thin film transistor using a printing method, and forming a liquid crystal layer between the first substrate and the corresponding second substrate.

The printing method may be any one of a gravure printing method, a gravure offset printing method, an inkjet printing method, an airbrush method, an electrostatic method, and a thermal transfer method.

The pixel electrode and the common electrode may be formed on the same layer as the gate line, or the pixel electrode and the common electrode may be formed on the same layer as the data line, or the common electrode may be formed on the same layer as the gate line. May be formed on the same layer as the data line or the common electrode may be formed on the same layer as the data line, and the pixel electrode may be formed on the passivation layer, or the pixel electrode and the common electrode may be formed on the passivation layer.

The protective film may be formed using any one of acryl, polyimide, BCB, SOG, BPSG, and photopolymer.

In addition, a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention for achieving the above object comprises the steps of preparing a first, a second substrate, a gate wiring, a gate electrode and the Forming a common wiring and a common electrode in the same direction with a predetermined distance from the gate wiring; forming a gate insulating film on the entire surface of the first substrate including the gate electrode; and forming an active layer on the gate insulating film. Forming a source electrode, a drain electrode, and a pixel electrode in the active layer; forming a protective film only on the gate electrode, the source electrode, and the drain electrode by a printing method; And forming a liquid crystal layer between the two substrates.

Hereinafter, a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, the protective film is formed only on the thin film transistor using printing techniques such as screen printing and offset printing.

8A to 8D are cross-sectional views illustrating a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention.

As shown in FIG. 8A, a conductive metal is deposited on a transparent lower substrate 51, a gate wiring (not shown) extending in one direction through a photo and etching process, and a gate electrode 52 protruding from the gate wiring. ) And a common wiring having a predetermined distance from the gate electrode 52 and having the same direction as the gate wiring, and a common electrode 53 protruding from both sides of the common wiring.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).

As shown in FIG. 8B, a gate insulating film 54 is formed on the entire surface of the lower substrate 51 including the gate electrode 52 and the common electrode 53, and an active layer (eg, an active layer) is formed on the gate insulating film 54. 55).

Here, the gate insulating layer 54 may use a silicon nitride layer (SiNx) or a silicon oxide layer (SiO ₂ ), and the active layer 55 may be formed of a stack of amorphous silicon and amorphous silicon containing impurities, although not shown in the drawing. It is structured.

Subsequently, the active layer 55 is selectively removed through a photo and etching process to form an active layer 55 having an island shape on the gate insulating layer 54 on the gate electrode 52.

As shown in FIG. 8C, a conductive metal is deposited on the entire surface of the lower substrate 51 including the active layer 55, and the source electrode 56, the drain electrode 57, and the pixel electrode are subjected to photo and etching processes. Each of 58 is formed.

The source electrode 56 and the drain electrode 57 may be formed on the active layer 55, and the pixel electrode 58 may be predetermined with the common electrode 53 on the gate insulating layer 54. Form spaced apart.

Meanwhile, the drain electrode 57 and the pixel electrode 58 are integrally connected.

As shown in FIG. 8D, the lower substrate 51 is formed by using the nozzle 60 only on the thin film transistor including the gate electrode 52, the active layer 55, the source electrode 56, and the drain electrode 57. The protective film 59 is formed by an inkjet printing method in which the organic material is directly sprayed thereon.

The protective layer 59 may be formed to protect the active layer 55 from external moisture or foreign matter, and may be formed of acrylic, polyimide, Benzo cyclobutene (BCB), spin on glass (SOG), and BPSG ( Boron Phosphorus Silicate Glass or photopolymer is used.

Subsequently, an alignment layer (not shown) made of polyimide or a photo-alignment material is formed on the entire surface of the lower substrate 51 including the passivation layer 59.

Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined. At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Although not shown in the drawing, the common electrode 53 and the arc electrode 58 may be formed on the same layer as the gate line or data line, and the common electrode 53 may be formed on the same layer as the data line. The pixel electrode 58 can also be formed on the passivation layer 59.

In addition, at least one of the common electrode 53 and the pixel electrode 58 may be formed of indium tin oxide (ITO) or indium zinc oxide (IZO).

Although the process is not shown in the drawings, R, G, and B color filter elements for implementing a black matrix layer and color for preventing light leakage on the upper substrate corresponding to the lower substrate 51 formed as described above. The color filter layer and the overcoat layer formed of a lamination are sequentially formed, and a liquid crystal layer is formed between the lower substrate 51 and the upper substrate.

On the other hand, the inkjet printing method is a method of spraying the organic material directly on the lower substrate 51 by using the nozzle 60, by using the principle that the organic material, which is expanded by heating the organic material is ejected through the nozzle 60 Doing.

In addition to the inkjet printing method, any one of a gravure printing method, a gravure off-set printing method, an air brush method, an electrostatic method, and a thermal transfer method may be used. .

9A and 9B are schematic views illustrating a gravure printing method and an offset-set gravure printing method used in the present invention.

As shown in FIG. 9A, the gravure op-set printing method stacks the organic material 62 from the applicator roll 65 in the recess 63 of a circular intaglio roller 61. do.

The organic material 62 may be stacked in the intaglio portion 63 by typography, squeegee, roll coating orifice extrusion, or the like.

Subsequently, after the organic material 62 is laminated in the intaglio portion 63, the organic material 62 is removed from the intaglio portion 63 using a doctor blade 64 to form a substrate ( 66).

As shown in FIG. 9B, in the gravure printing method, the organic material 62 is buried in a circular roller 61, scraped with a doctor to remove unnecessary organic material 62, and the organic material remaining in the concave cell. The organic material 62 is transferred onto the substrate 66 by applying an appropriate pressure to the material 62 using a rubber squeeze.

In addition, the air brush method is a method of spraying an organic material through a compressor, which is a modified inkjet printing method, and the electrostatic method inverts particles floating around the paint toner by applying a charge pattern to the surface of the insulating paper accurately. It is a method of transferring and bonding to insulating paper passing through a printer, and the thermal transfer method is a method of directly transferring to paper, film or other materials using beeswax or resin ribbon.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

As described above, the method of manufacturing the transverse electric field type liquid crystal display device according to the present invention has the following effects.

First, by forming the passivation layer only on the thin film transistor, the additional capacitance between the pixel electrode and the common electrode can be reduced, thereby reducing the driving voltage of the liquid crystal layer.

Second, by forming a protective film only on the upper portion of the thin film transistor by a printing method, it is possible to simplify the process and lower the manufacturing cost.

Claims (9)

Preparing a first and a second substrate; Forming gate lines and data lines intersecting to define a pixel area on the first substrate; Forming a thin film transistor at an intersection point of the gate wiring and the data wiring; Staggering a plurality of pixel electrodes and a common electrode having a predetermined interval in the pixel region; Forming a passivation layer only on the upper portion of the thin film transistor by using a printing method; And forming a liquid crystal layer between the first substrate and the corresponding second substrate. The transverse electric field liquid crystal of claim 1, wherein the printing method uses any one of a gravure printing method, a gravure op-set printing method, an inkjet printing method, an airbrush method, an electrostatic method, and a thermal transfer method. Method for manufacturing a display device. The method of claim 1, wherein the pixel electrode and the common electrode are formed on the same layer as the gate line. The method of claim 1, wherein the pixel electrode and the common electrode are formed on the same layer as the data line. The method of claim 1, wherein the common electrode is formed on the same layer as the gate line, and the pixel electrode is formed on the same layer as the data line. The method according to claim 1, wherein the common electrode is formed on the same layer as the data line, and the pixel electrode is formed on the passivation layer. The method of claim 1, wherein the pixel electrode and the common electrode are formed on the passivation layer. The method of claim 1, wherein the protective film is formed by using any one of acrylic, polyimide, BCB, SOG, BPSG, and photopolymer. Preparing a first and a second substrate; Forming a common wiring and a common electrode on the first substrate in the same direction at a predetermined distance from the gate wiring, the gate electrode, and the gate wiring; Forming a gate insulating film on an entire surface of the first substrate including the gate electrode; Forming an active layer on the gate insulating film; Forming a source electrode, a drain electrode, and a pixel electrode on the active layer; Forming a passivation layer on the gate electrode, the source electrode, and the drain electrode only in a printing manner; Forming a liquid crystal layer between the first substrate and the second substrate; and forming a liquid crystal layer between the first substrate and the second substrate.