KR100756400B1 - 함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법 - Google Patents

함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법 Download PDF

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KR100756400B1
KR100756400B1 KR1020077006877A KR20077006877A KR100756400B1 KR 100756400 B1 KR100756400 B1 KR 100756400B1 KR 1020077006877 A KR1020077006877 A KR 1020077006877A KR 20077006877 A KR20077006877 A KR 20077006877A KR 100756400 B1 KR100756400 B1 KR 100756400B1
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South Korea
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group
fluorine
compound
cyclic compound
aluminum
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Korean (ko)
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KR20070038581A (ko
Inventor
하루히코 코모리야
시니치 수미다
카츄노리 카와무라
사토루 고바야시
사토루 미야자와
카쥬히코 마에다
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샌트랄 글래스 컴퍼니 리미티드
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Publication of KR20070038581A publication Critical patent/KR20070038581A/ko
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/93—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems condensed with a ring other than six-membered
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Furan Compounds (AREA)
  • Epoxy Compounds (AREA)
KR1020077006877A 2003-04-25 2004-03-24 함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법 Expired - Fee Related KR100756400B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003120921A JP4557500B2 (ja) 2003-04-25 2003-04-25 フッ素系環状化合物
JPJP-P-2003-00120921 2003-04-25
PCT/JP2004/004007 WO2004096786A1 (ja) 2003-04-25 2004-03-24 含フッ素環状化合物、含フッ素重合性単量体、含フッ素高分子化合物並びにそれを用いたレジスト材料及びパターン形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020057019871A Division KR100756401B1 (ko) 2003-04-25 2004-03-24 함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법

Publications (2)

Publication Number Publication Date
KR20070038581A KR20070038581A (ko) 2007-04-10
KR100756400B1 true KR100756400B1 (ko) 2007-09-11

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020077006877A Expired - Fee Related KR100756400B1 (ko) 2003-04-25 2004-03-24 함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법
KR1020057019871A Expired - Fee Related KR100756401B1 (ko) 2003-04-25 2004-03-24 함불소 환상화합물, 함불소 중합성 단량체, 함불소고분자화합물 및 이를 이용한 레지스트 재료 및 패턴형성방법

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Country Status (4)

Country Link
US (1) US20060135744A1 (enExample)
JP (1) JP4557500B2 (enExample)
KR (2) KR100756400B1 (enExample)
WO (1) WO2004096786A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235810B2 (ja) * 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20060194143A1 (en) * 2005-02-25 2006-08-31 Shinichi Sumida Fluorine-containing polymerizable monomers, fluorine-containing polymer compounds, resist compositions using the same, and patterning process
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1780198B1 (en) 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
EP1780199B1 (en) 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
JP5124806B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
KR101035742B1 (ko) 2006-09-28 2011-05-20 신에쓰 가가꾸 고교 가부시끼가이샤 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법
US7568527B2 (en) * 2007-01-04 2009-08-04 Rock Well Petroleum, Inc. Method of collecting crude oil and crude oil collection header apparatus
US7543649B2 (en) * 2007-01-11 2009-06-09 Rock Well Petroleum Inc. Method of collecting crude oil and crude oil collection header apparatus
US7823662B2 (en) * 2007-06-20 2010-11-02 New Era Petroleum, Llc. Hydrocarbon recovery drill string apparatus, subterranean hydrocarbon recovery drilling methods, and subterranean hydrocarbon recovery methods
US7832483B2 (en) * 2008-01-23 2010-11-16 New Era Petroleum, Llc. Methods of recovering hydrocarbons from oil shale and sub-surface oil shale recovery arrangements for recovering hydrocarbons from oil shale
JP7140964B2 (ja) * 2017-06-05 2022-09-22 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036091A (en) * 1958-12-24 1962-05-22 Du Pont Addition products of polyfluorocyclobutanones and a diene
US6949615B2 (en) * 2000-10-31 2005-09-27 Daicel Chemical Industries, Ltd. Monomer having electron-withdrawing group and process for preparing the same
JP4071021B2 (ja) * 2001-04-10 2008-04-02 信越化学工業株式会社 ラクトン構造を有する（メタ）アクリレート化合物、その重合体、レジスト材料及びパターン形成方法
JP4924783B2 (ja) * 2001-08-06 2012-04-25 昭和電工株式会社 脂環式化合物
EP1539690A4 (en) * 2002-08-09 2007-01-24 Du Pont FLUORINATED MONOMERS, FLUORATED POLYMERS WITH POLYCYCLIC GROUPS WITH ANNELATED 4-LOW HETEROCYCLIC RINGS SUITABLE FOR USE AS PHOTORESISTS, AND MICROLITHOGRAPHIC PROCESSES

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. Photopolm. Sci. Technol., 14, 603-611, 2001
J. Photopolm. Sci. Technol., 15, 655-666, 2002

Also Published As

Publication number Publication date
KR20070038581A (ko) 2007-04-10
US20060135744A1 (en) 2006-06-22
JP2004323422A (ja) 2004-11-18
JP4557500B2 (ja) 2010-10-06
KR20050123171A (ko) 2005-12-29
WO2004096786A1 (ja) 2004-11-11
KR100756401B1 (ko) 2007-09-10

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