KR100755060B1 - 버퍼 - Google Patents
버퍼 Download PDFInfo
- Publication number
- KR100755060B1 KR100755060B1 KR1020050094052A KR20050094052A KR100755060B1 KR 100755060 B1 KR100755060 B1 KR 100755060B1 KR 1020050094052 A KR1020050094052 A KR 1020050094052A KR 20050094052 A KR20050094052 A KR 20050094052A KR 100755060 B1 KR100755060 B1 KR 100755060B1
- Authority
- KR
- South Korea
- Prior art keywords
- buffer
- signal
- clock
- external clock
- refresh
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Dram (AREA)
Abstract
Description
Claims (8)
- 외부클럭신호를 입력받아 내부클럭신호를 생성하는 버퍼에 있어서,외부클럭신호에 동기하여 오토리프레쉬 동작 중 인에이블되는 리프레쉬신호를 버퍼링하는 버퍼제어부와;상기 버퍼제어부의 출력신호와 클럭인에이블신호를 논리연산하여 제어신호를 출력하는 논리부; 및상기 논리부의 제어신호에 의해 제어되어, 상기 외부클럭신호를 버퍼링하여 내부클럭신호를 출력하는 내부클럭생성부를 포함하여 구성되는 버퍼.
- 제 1항에 있어서, 상기 버퍼제어부와 상기 논리부 사이에 연결되고, 상기 버퍼제어부의 출력신호를 래치하는 래치부를 더 포함하는 것을 특징으로 하는 버퍼.
- 제 2항에 있어서, 상기 래치부는 상기 버퍼제어부의 출력신호를 반전 버퍼링하는 제 1 인버터와;상기 제 1 인버터와 래치 형태로 접속된 제 2 인버터를 포함하여 구성되는 버퍼.
- 제 3항에 있어서, 상기 제 2 인버터는 외부클럭에 동기하여 동작하되, 상기 버퍼제어부가 턴오프될 때 동작하는 것을 특징으로 하는 버퍼.
- 제 1항 또는 제 2항에 있어서, 상기 버퍼제어부는 상기 외부클럭신호의 하강에지에 동기해서 동작하는 것을 특징으로 하는 버퍼.
- 제 1항 또는 제 2항에 있어서, 상기 버퍼제어부는 상기 외부클럭신호를 입력받아, 상기 외부클럭신호의 반전신호를 출력하는 것을 특징으로 하는 버퍼.
- 삭제
- 제 1항에 있어서, 상기 논리부는 논리합 연산을 수행하는 것을 특징으로 하는 버퍼.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050094052A KR100755060B1 (ko) | 2005-10-06 | 2005-10-06 | 버퍼 |
US11/275,462 US7368953B2 (en) | 2005-10-06 | 2006-01-06 | Buffer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050094052A KR100755060B1 (ko) | 2005-10-06 | 2005-10-06 | 버퍼 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070038774A KR20070038774A (ko) | 2007-04-11 |
KR100755060B1 true KR100755060B1 (ko) | 2007-09-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050094052A KR100755060B1 (ko) | 2005-10-06 | 2005-10-06 | 버퍼 |
Country Status (2)
Country | Link |
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US (1) | US7368953B2 (ko) |
KR (1) | KR100755060B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100884609B1 (ko) * | 2007-09-12 | 2009-02-19 | 주식회사 하이닉스반도체 | 메모리장치의 버퍼제어회로 |
KR102567922B1 (ko) * | 2018-07-03 | 2023-08-18 | 에스케이하이닉스 주식회사 | 지연회로 및 이를 이용한 반도체시스템 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030038265A (ko) * | 2001-11-10 | 2003-05-16 | 삼성전자주식회사 | 채널효율을 증가시키면서 피크 전류를 감소시키는리프레쉬 명령신호발생회로 및 명령신호발생방법 |
KR20040100249A (ko) * | 2003-05-22 | 2004-12-02 | 주식회사 하이닉스반도체 | 동기식 반도체 메모리 소자의 지연고정루프 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6426661B1 (en) * | 2001-08-20 | 2002-07-30 | International Business Machines Corporation | Clock distribution with constant delay clock buffer circuit |
US6411152B1 (en) * | 2001-09-24 | 2002-06-25 | Broadcom Corporation | Conditional clock buffer circuit |
KR100487652B1 (ko) * | 2002-08-22 | 2005-05-03 | 삼성전자주식회사 | 클럭신호 라인에 대한 부하를 줄일 수 있는 플립플롭 |
KR100612417B1 (ko) * | 2004-07-21 | 2006-08-16 | 삼성전자주식회사 | 펄스-기반 고속 저전력 게이티드 플롭플롭 회로 |
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2005
- 2005-10-06 KR KR1020050094052A patent/KR100755060B1/ko active IP Right Grant
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2006
- 2006-01-06 US US11/275,462 patent/US7368953B2/en active Active - Reinstated
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030038265A (ko) * | 2001-11-10 | 2003-05-16 | 삼성전자주식회사 | 채널효율을 증가시키면서 피크 전류를 감소시키는리프레쉬 명령신호발생회로 및 명령신호발생방법 |
KR20040100249A (ko) * | 2003-05-22 | 2004-12-02 | 주식회사 하이닉스반도체 | 동기식 반도체 메모리 소자의 지연고정루프 |
Also Published As
Publication number | Publication date |
---|---|
US20070080719A1 (en) | 2007-04-12 |
KR20070038774A (ko) | 2007-04-11 |
US7368953B2 (en) | 2008-05-06 |
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