KR100884609B1 - 메모리장치의 버퍼제어회로 - Google Patents
메모리장치의 버퍼제어회로 Download PDFInfo
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- KR100884609B1 KR100884609B1 KR1020070092555A KR20070092555A KR100884609B1 KR 100884609 B1 KR100884609 B1 KR 100884609B1 KR 1020070092555 A KR1020070092555 A KR 1020070092555A KR 20070092555 A KR20070092555 A KR 20070092555A KR 100884609 B1 KR100884609 B1 KR 100884609B1
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- auto refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (11)
- 오토 리프레시 동작과정에서 데이터 트레이닝이 수행되는 것을 감지하는 오토 리프레시 버퍼 제어수단; 및상기 오토 리프레시 버퍼 제어수단에서 데이터 트레이닝 수행 여부에 대응하여 출력되는 인에이블신호에 의해 입력버퍼의 인에이블 및 디스에이블 상태를 제어하기 위한 제어수단을 포함하는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 1 항에 있어서,상기 제어수단은, 데이터의 리드/라이트에 이용될 클럭신호를 발생하는 클럭 제어수단인 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 2 항에 있어서,상기 클럭 제어수단은, 라이트 기입 클럭신호에 의해 발생된 제 1 출력신호와상기 오토 리프레시 버퍼 제어수단의 출력신호를 앤드 연산하는 앤드연산부를 더 포함하는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 1 항에 있어서,상기 제어수단은, 커맨드 제어에 이용될 클럭신호를 발생하는 커맨드용 클럭 제어수단인 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 4 항에 있어서,상기 커맨드용 클럭 제어수단은, 뱅크 액티브 될 때 로우신호를 갖는 제어신호에 의해 발생된 제 1 출력신호와 상기 오토 리프레시 버퍼 제어수단의 출력신호를 앤드 연산하는 앤드연산부를 더 포함하는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 1 항에 있어서,상기 제어수단은, 데이터 입출력버퍼를 인에이블상태로 제어하기 위한 데이터 입출력버퍼제어수단인 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 6 항에 있어서,상기 입출력버퍼제어수단은, 라이트 제어신호에 의해 발생된 제 1 출력신호와상기 오토 리프레시 버퍼 제어수단의 출력신호를 앤드 연산하는 앤드연산부를 더 포함하는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 1 항에 있어서,데이터 트레이닝 수행 제어신호를 발생하는 모드 레지스터 세트를 더 포함하고, 상기 모드 레지스터 세트에서 발생된 데이터 트레이닝 제어신호는 오토 리프레시 버퍼 제어수단에 제공되는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 8 항에 있어서,오토 리프레시 제어신호를 발생하는 커맨드 디코더를 더 포함하고, 상기 커맨드 디코더에서 발생된 오토 리프레시 제어신호는 오토 리프레시 버퍼 제어수단에 제공되는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 9 항에 있어서,상기 오토 리프레시 버퍼 제어수단은, 데이터 트레이닝 제어신호가 인에이블상태에서 오토 리프레시 제어신호가 제공되면 출력신호를 인에이블시키고, 프리차지 제어신호가 제공되면 출력신호를 디스에이블시키는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
- 제 10 항에 있어서,상기 오토 리프레시 버퍼 제어수단은, 데이터 트레이닝 제어신호와 오토 리프레시 제어신호를 연산하는 낸드게이트;상기 낸드게이트의 출력을 인버팅한 신호에 의해 턴-온/오프 되는 NMOS트랜지스터;공급전원과 접지전원 사이에 상기 NMOS 트랜지스터와 직렬 연결되고, 프리차지 제어신호를 인버팅한 신호에 의해 턴-온/오프 되는 PMOS 트랜지스터;상기 두개의 트렌지스터 사이의 접속점의 논리값을 저장하는 래치로 구성되 는 것을 특징으로 하는 메모리장치의 버퍼제어회로.
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KR1020070092555A KR100884609B1 (ko) | 2007-09-12 | 2007-09-12 | 메모리장치의 버퍼제어회로 |
US12/005,573 US7760557B2 (en) | 2007-09-12 | 2007-12-27 | Buffer control circuit of memory device |
US12/816,040 US7961528B2 (en) | 2007-09-12 | 2010-06-15 | Buffer control circuit of memory device |
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KR1020070092555A KR100884609B1 (ko) | 2007-09-12 | 2007-09-12 | 메모리장치의 버퍼제어회로 |
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KR100884609B1 true KR100884609B1 (ko) | 2009-02-19 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100884609B1 (ko) * | 2007-09-12 | 2009-02-19 | 주식회사 하이닉스반도체 | 메모리장치의 버퍼제어회로 |
KR20120011491A (ko) | 2010-07-29 | 2012-02-08 | 주식회사 하이닉스반도체 | 반도체 시스템 및 그 데이터 트래이닝 방법 |
US9286965B2 (en) | 2010-12-03 | 2016-03-15 | Rambus Inc. | Memory refresh method and devices |
US10437514B2 (en) | 2017-10-02 | 2019-10-08 | Micron Technology, Inc. | Apparatuses and methods including memory commands for semiconductor memories |
US10915474B2 (en) | 2017-11-29 | 2021-02-09 | Micron Technology, Inc. | Apparatuses and methods including memory commands for semiconductor memories |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20010004670A (ko) * | 1999-06-29 | 2001-01-15 | 김영환 | 반도체 메모리 소자의 자동 리프레쉬 방법 및 장치 |
KR20040057344A (ko) * | 2002-12-26 | 2004-07-02 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 오토 리프레시 제어회로 |
KR20070038774A (ko) * | 2005-10-06 | 2007-04-11 | 주식회사 하이닉스반도체 | 버퍼 |
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KR100259336B1 (ko) * | 1997-04-15 | 2000-06-15 | 김영환 | 반도체 소자의 오토 리프레쉬 제어회로 |
KR100884609B1 (ko) * | 2007-09-12 | 2009-02-19 | 주식회사 하이닉스반도체 | 메모리장치의 버퍼제어회로 |
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- 2007-09-12 KR KR1020070092555A patent/KR100884609B1/ko active IP Right Grant
- 2007-12-27 US US12/005,573 patent/US7760557B2/en active Active
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- 2010-06-15 US US12/816,040 patent/US7961528B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20010004670A (ko) * | 1999-06-29 | 2001-01-15 | 김영환 | 반도체 메모리 소자의 자동 리프레쉬 방법 및 장치 |
KR20040057344A (ko) * | 2002-12-26 | 2004-07-02 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 오토 리프레시 제어회로 |
KR20070038774A (ko) * | 2005-10-06 | 2007-04-11 | 주식회사 하이닉스반도체 | 버퍼 |
Also Published As
Publication number | Publication date |
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US7961528B2 (en) | 2011-06-14 |
US20090067260A1 (en) | 2009-03-12 |
US7760557B2 (en) | 2010-07-20 |
US20100254200A1 (en) | 2010-10-07 |
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