KR100745547B1 - 막 형성 방법, 유기 일렉트로루미네선스 장치의 제조 방법,유기 일렉트로루미네선스 장치 및 전자 기기 - Google Patents
막 형성 방법, 유기 일렉트로루미네선스 장치의 제조 방법,유기 일렉트로루미네선스 장치 및 전자 기기 Download PDFInfo
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- KR100745547B1 KR100745547B1 KR1020060092954A KR20060092954A KR100745547B1 KR 100745547 B1 KR100745547 B1 KR 100745547B1 KR 1020060092954 A KR1020060092954 A KR 1020060092954A KR 20060092954 A KR20060092954 A KR 20060092954A KR 100745547 B1 KR100745547 B1 KR 100745547B1
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 32
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 230000006837 decompression Effects 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000012046 mixed solvent Substances 0.000 abstract description 42
- 230000008569 process Effects 0.000 abstract description 31
- 238000001704 evaporation Methods 0.000 abstract description 26
- 230000008020 evaporation Effects 0.000 abstract description 26
- 238000003825 pressing Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 37
- 238000002347 injection Methods 0.000 description 23
- 239000007924 injection Substances 0.000 description 23
- 238000001035 drying Methods 0.000 description 19
- 238000005192 partition Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 230000009467 reduction Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- -1 polyphenylene Polymers 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012792 lyophilization process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 108010004350 tyrosine-rich amelogenin polypeptide Proteins 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims (7)
- 복수 종류의 액체를 혼합한 용매에 기능 재료를 용해시켜 이루어지는 액상(液狀) 조성물을 기판 위에 배치하고, 상기 액상 조성물을 건조시켜 막을 형성하는 막 형성 방법으로서,상기 기판 위에 배치된 액상 조성물의 주위를 제 1 감압(減壓) 속도로 감압하는 제 1 감압 공정과,상기 제 1 감압 공정 후, 상기 액상 조성물 주위의 압력을 소정의 압력까지 가압(加壓)하는 가압 공정과,상기 가압 공정 후, 상기 액상 조성물의 주위를 상기 제 2 감압 속도로 감압하는 제 2 감압 공정을 구비하는 것을 특징으로 하는 막 형성 방법.
- 제 1 항에 있어서,상기 가압 공정에서는, 상기 액상 조성물의 주위에 불활성 가스를 공급하는 것을 특징으로 하는 막 형성 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 가압 공정에서는, 상기 액상 조성물의 주위에 상기 용매의 증기를 공급하는 것을 특징으로 하는 막 형성 방법.
- 제 1 항에 있어서,상기 액상 조성물의 도포를 잉크젯법에 의해 행하는 것을 특징으로 하는 막 형성 방법.
- 전하 수송층 및 발광층을 갖는 유기 일렉트로루미네선스 장치의 제조 방법으로서,제 1 항에 기재된 막 형성 방법에 의해, 상기 전하 수송층 및 상기 발광층 중 적어도 한쪽을 형성하는 것을 특징으로 하는 유기 일렉트로루미네선스 장치의 제조 방법.
- 제 5 항에 기재된 유기 일렉트로루미네선스 장치의 제조 방법에 의해 제조된 것을 특징으로 하는 유기 일렉트로루미네선스 장치.
- 제 6 항에 기재된 유기 일렉트로루미네선스 장치를 탑재한 것을 특징으로 하는 전자 기기.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005281510A JP4396607B2 (ja) | 2005-09-28 | 2005-09-28 | 膜形成方法、有機エレクトロルミネセンス装置の製造方法、有機エレクトロルミネセンス装置及び電子機器 |
JPJP-P-2005-00281510 | 2005-09-28 |
Publications (2)
Publication Number | Publication Date |
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KR20070035973A KR20070035973A (ko) | 2007-04-02 |
KR100745547B1 true KR100745547B1 (ko) | 2007-08-03 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020060092954A KR100745547B1 (ko) | 2005-09-28 | 2006-09-25 | 막 형성 방법, 유기 일렉트로루미네선스 장치의 제조 방법,유기 일렉트로루미네선스 장치 및 전자 기기 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7989025B2 (ko) |
JP (1) | JP4396607B2 (ko) |
KR (1) | KR100745547B1 (ko) |
CN (1) | CN1971965A (ko) |
TW (1) | TW200737561A (ko) |
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US8680586B2 (en) * | 2007-01-05 | 2014-03-25 | Rohm Co., Ltd. | Semiconductor light emitting device including GaAs substrate and method for manufacturing the same |
JP5163430B2 (ja) * | 2008-01-09 | 2013-03-13 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
TW201005813A (en) | 2008-05-15 | 2010-02-01 | Du Pont | Process for forming an electroactive layer |
US9048344B2 (en) | 2008-06-13 | 2015-06-02 | Kateeva, Inc. | Gas enclosure assembly and system |
US8383202B2 (en) | 2008-06-13 | 2013-02-26 | Kateeva, Inc. | Method and apparatus for load-locked printing |
US9604245B2 (en) | 2008-06-13 | 2017-03-28 | Kateeva, Inc. | Gas enclosure systems and methods utilizing an auxiliary enclosure |
US10442226B2 (en) | 2008-06-13 | 2019-10-15 | Kateeva, Inc. | Gas enclosure assembly and system |
US10434804B2 (en) | 2008-06-13 | 2019-10-08 | Kateeva, Inc. | Low particle gas enclosure systems and methods |
US11975546B2 (en) | 2008-06-13 | 2024-05-07 | Kateeva, Inc. | Gas enclosure assembly and system |
US8899171B2 (en) | 2008-06-13 | 2014-12-02 | Kateeva, Inc. | Gas enclosure assembly and system |
JP5113008B2 (ja) * | 2008-09-30 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法およびデバイスの形成方法 |
WO2010102272A2 (en) | 2009-03-06 | 2010-09-10 | E. I. Du Pont De Nemours And Company | Process for forming an electroactive layer |
TW201044667A (en) | 2009-03-09 | 2010-12-16 | Du Pont | Process for forming an electroactive layer |
EP2406813A4 (en) * | 2009-03-09 | 2012-07-25 | Du Pont | METHOD FOR FORMING AN ELECTROACTIVE LAYER |
JPWO2011099362A1 (ja) * | 2010-02-15 | 2013-06-13 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンスパネルの製造方法 |
KR101084191B1 (ko) * | 2010-02-16 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
US10468279B2 (en) | 2013-12-26 | 2019-11-05 | Kateeva, Inc. | Apparatus and techniques for thermal treatment of electronic devices |
KR102458181B1 (ko) | 2014-01-21 | 2022-10-21 | 카티바, 인크. | 전자 장치 인캡슐레이션을 위한 기기 및 기술 |
CN106233449B (zh) | 2014-04-30 | 2019-07-12 | 科迪华公司 | 用于衬底涂覆的气垫设备和技术 |
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CN107848286B (zh) * | 2015-08-11 | 2019-10-01 | 富士胶片株式会社 | 功能性薄膜的制造方法以及制造装置 |
CN106405923A (zh) * | 2016-10-28 | 2017-02-15 | 京东方科技集团股份有限公司 | 彩膜基板的制造方法、彩膜基板和显示装置 |
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WO2000059267A1 (fr) | 1999-03-29 | 2000-10-05 | Seiko Epson Corporation | Composition, procede de preparation d'un film, et element fonctionnel et son procede de preparation |
KR20040012484A (ko) * | 2002-08-02 | 2004-02-11 | 세이코 엡슨 가부시키가이샤 | 조성물과 이것을 사용한 유기 도전성 막 및 그 제조 방법,그 유기 도전성 막을 구비한 유기 el 소자 및 그 제조방법, 그 유기 도전성 막을 구비한 반도체 소자 및 그제조 방법, 전자 장치 및 전자 기기 |
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KR100939468B1 (ko) | 2001-03-10 | 2010-01-29 | 메르크 파텐트 게엠베하 | 유기 반도체 용액 및 분산액 |
JP4066661B2 (ja) * | 2002-01-23 | 2008-03-26 | セイコーエプソン株式会社 | 有機el装置の製造装置および液滴吐出装置 |
JP2004349064A (ja) | 2003-05-21 | 2004-12-09 | Nippon Sheet Glass Co Ltd | 有機el素子及びその製造方法 |
JP2005172316A (ja) | 2003-12-09 | 2005-06-30 | Seiko Epson Corp | 減圧乾燥装置、電気光学装置、電気光学装置の製造方法および電子機器 |
JP4148933B2 (ja) * | 2004-08-31 | 2008-09-10 | シャープ株式会社 | 機能膜の製造方法、機能膜形成用塗液、機能素子、電子デバイス及び表示装置 |
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- 2006-09-25 KR KR1020060092954A patent/KR100745547B1/ko active IP Right Grant
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- 2006-09-27 US US11/535,705 patent/US7989025B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2000059267A1 (fr) | 1999-03-29 | 2000-10-05 | Seiko Epson Corporation | Composition, procede de preparation d'un film, et element fonctionnel et son procede de preparation |
KR20010043918A (ko) * | 1999-03-29 | 2001-05-25 | 야스카와 히데아키 | 조성물, 막의 제조방법, 및 기능 소자와 이의 제조방법 |
KR20040012484A (ko) * | 2002-08-02 | 2004-02-11 | 세이코 엡슨 가부시키가이샤 | 조성물과 이것을 사용한 유기 도전성 막 및 그 제조 방법,그 유기 도전성 막을 구비한 유기 el 소자 및 그 제조방법, 그 유기 도전성 막을 구비한 반도체 소자 및 그제조 방법, 전자 장치 및 전자 기기 |
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JP2007090199A (ja) | 2007-04-12 |
JP4396607B2 (ja) | 2010-01-13 |
TW200737561A (en) | 2007-10-01 |
KR20070035973A (ko) | 2007-04-02 |
US7989025B2 (en) | 2011-08-02 |
CN1971965A (zh) | 2007-05-30 |
US20070072004A1 (en) | 2007-03-29 |
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