KR100744599B1 - 구리 배선 형성 방법 - Google Patents
구리 배선 형성 방법 Download PDFInfo
- Publication number
- KR100744599B1 KR100744599B1 KR1020010079824A KR20010079824A KR100744599B1 KR 100744599 B1 KR100744599 B1 KR 100744599B1 KR 1020010079824 A KR1020010079824 A KR 1020010079824A KR 20010079824 A KR20010079824 A KR 20010079824A KR 100744599 B1 KR100744599 B1 KR 100744599B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- forming
- film
- pattern
- semiconductor substrate
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 57
- 239000010949 copper Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 238000009713 electroplating Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세하게 설명하도록 한다.
Claims (6)
- 반도체기판에 소정 패턴을 형성하는 단계;상기 패턴을 포함한 반도체기판 상에 구리 씨드막을 증착하는 단계;상기 구리 씨드막 상에 전기 도금 증착 방식을 적용하여 제 1구리막을 형성하는 단계;상기 제 1구리막 상에 스퍼터링 방식을 적용하여 제 2구리막을 형성하는 단계; 및상기 제 2구리막을 연마하여 구리배선을 형성하는 단계;를 포함하는 것을 특징으로 하는 구리 배선 형성 방법.
- 제 1 항에 있어서, 상기 스퍼터링 방식은 150∼400℃ 온도에서 진행하는 것을 특징으로 하는 구리 배선 형성 방법.
- 제 1 항에 있어서. 상기 구리 씨드막을 증착하는 단계 전, 상기 패턴을 포함한 반도체기판 상에 확산방지막을 형성하는 단계;를 더 포함하는 것을 특징으로 하는 구리 배선 형성 방법.
- 제 3 항에 있어서. 상기 확산방지막은 Ta, TaN, TiN 및 WN 중 어느 하나의 막을 이용한 것을 특징으로 하는 구리 배선 형성 방법.
- 제 3 항에 있어서. 상기 확산방지막은 100∼1000Å 두께로 형성하는 것을 특징으로 하는 구리 배선 형성 방법.
- 제 1항에 있어서. 상기 구리 씨드막은 250∼2500Å 두께로 증착하는 것을 특징으로 하는 구리 배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010079824A KR100744599B1 (ko) | 2001-12-15 | 2001-12-15 | 구리 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010079824A KR100744599B1 (ko) | 2001-12-15 | 2001-12-15 | 구리 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030049582A KR20030049582A (ko) | 2003-06-25 |
KR100744599B1 true KR100744599B1 (ko) | 2007-08-01 |
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KR1020010079824A KR100744599B1 (ko) | 2001-12-15 | 2001-12-15 | 구리 배선 형성 방법 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100866110B1 (ko) * | 2002-06-10 | 2008-10-31 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리배선 형성방법 |
KR100871368B1 (ko) * | 2002-07-11 | 2008-12-02 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 스페이서 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135504A (ja) * | 1997-10-30 | 1999-05-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000049162A (ja) * | 1998-07-28 | 2000-02-18 | Nec Corp | 半導体装置の製造方法 |
KR20000017630A (ko) * | 1998-08-31 | 2000-03-25 | 가네꼬 히사시 | 반도체 장치의 제조 방법, 그를 위한 도금 장치 및 스퍼터링장치 |
JP2000183067A (ja) * | 1998-12-18 | 2000-06-30 | Rohm Co Ltd | 半導体装置の製造方法 |
-
2001
- 2001-12-15 KR KR1020010079824A patent/KR100744599B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135504A (ja) * | 1997-10-30 | 1999-05-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000049162A (ja) * | 1998-07-28 | 2000-02-18 | Nec Corp | 半導体装置の製造方法 |
KR20000017630A (ko) * | 1998-08-31 | 2000-03-25 | 가네꼬 히사시 | 반도체 장치의 제조 방법, 그를 위한 도금 장치 및 스퍼터링장치 |
JP2000183067A (ja) * | 1998-12-18 | 2000-06-30 | Rohm Co Ltd | 半導体装置の製造方法 |
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KR20030049582A (ko) | 2003-06-25 |
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