KR100731557B1 - 타일화된 세라믹 라이너를 갖는 반도체 처리 장치 - Google Patents
타일화된 세라믹 라이너를 갖는 반도체 처리 장치 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 59
- 238000012545 processing Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title abstract description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000008646 thermal stress Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 41
- 229910052782 aluminium Inorganic materials 0.000 abstract description 40
- 239000006185 dispersion Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 229920001971 elastomer Polymers 0.000 description 12
- 239000000806 elastomer Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000013536 elastomeric material Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920000260 silastic Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (20)
- 챔버 측벽에 의해 한정되는 내부 공간을 갖는 플라즈마 처리 챔버;상기 내부 공간 내에서 기판이 그 위에 놓여져 처리되고, 그 주변의 외측으로 상기 챔버 측벽이 이격되어 있는 기판 지지체;상기 기판의 처리 동안에 상기 내부 공간으로 공정가스를 공급할 수 있는 가스공급기;상기 기판의 처리 동안에 상기 내부 공간내의 상기 공정가스를 플라즈마 상태로 에너지화시킬 수 있는 에너지 소스; 및상기 챔버 측벽과 상기 기판 지지체의 주변 사이에서 지지되고, 세라믹 타일들의 어셈블리를 포함하는 세라믹 라이너를 구비하고,상기 타일들은 탄성 중합체 결합부에 의해 지지 부재에 부착되어 있는, 반도체 기판 처리용 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 라이너는 굽힘가능한 금속 프레임을 포함하는 탄성적 지지부재에 의해 지지되는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 타일은 맞물리는(interlocking) 모서리들을 갖는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 지지 부재는 복수의 금속 안벽 (backing) 부재를 포함하고, 상기 탄성중합체 결합부는 상기 세라믹 타일들의 각각을 각각의 금속 안벽 부재에 부착하는, 플라즈마 처리 시스템.
- 제 4 항에 있어서,상기 금속 안벽부재는 굽힘가능한 금속 프레임 상에 지지되고, 상기 굽힘가능한 금속 프레임은 상기 탄성중합체 결합부, 상기 금속 안벽부재들 및 상기 굽힘가능한 금속 프레임을 통과하여 열적으로 제어되는 부재로 연장되는 열 경로를 통하여 상기 세라믹 타일들로부터 열을 제거하도록 상기 열적으로 제어되는 부재에 의해 지지되는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 지지 부재는 상기 챔버 측벽을 포함하고, 상기 세라믹 타일들은 상기 세라믹 타일들 각각과 상기 챔버 측벽 사이의 탄성중합체 결합부에 의해 상기 챔버 측벽에 접착되는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 라이너는 굽힘가능한 금속 프레임을 포함하는 탄성 지지체에 의해 지지되고, 상기 굽힘가능한 금속 프레임은 상기 굽힘가능한 금속 프레임을 통과하여 열적으로 제어되는 부재로 연장되는 열 경로를 통하여 열을 상기 세라믹 라이너로부터 제거할 수 있도록 상기 열적으로 제어되는 부재에 의해 지지되는, 플라즈마 처리 시스템.
- 제 7 항에 있어서,상기 세라믹 라이너를 가열할 수 있도록 상기 굽힘가능한 금속 프레임에 의해 지지되는 히터를 더 포함하는, 플라즈마 처리 시스템.
- 제 7 항에 있어서,상기 굽힘가능한 금속 프레임은 분할된 내부 프레임 부재 및 분할된 외부 프레임 부재를 구비하며, 상기 탄성중합체 결합부가 상기 세라믹 타일들의 각각을 상기 내부 프레임 부재의 각각의 분할부에 접착하며, 상기 내부 프레임 부재는 상기 외부 프레임 부재에 의해 지지되고, 상기 외부 프레임 부재는 상기 챔버에 의해 지지되는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 타일들은 본질적으로 CVD 실리콘 카바이드로 이루어지는 것을 특징으로 하는 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 타일들은 본질적으로 CVD 실리콘 카바이드로 코팅되는 소결된 실리콘 카바이드로 이루어지는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 라이너는, 플라즈마 처리 시스템의 동작 동안에 상기 세라믹 라이너와 상기 프레임 부재들 상의 열응력 차이를 수용하도록 구성된 내부 및 외부 금속 프레임 부재를 포함하는 탄성 지지부재에 의해 지지되는, 플라즈마 처리 시스템.
- 제 12 항에 있어서,상기 외부 프레임 부재의 상부 부분이 상기 챔버의 열적으로 제어되는 부분에 의해 지지되고, 상기 외부 프레임 부재의 하부 부분이 상기 내부 프레임 부재의 하부 부분에 부착되고, 상기 세라믹 라이너는 상기 내부 프레임 부재에 의해 지지되는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 라이너는 상기 챔버의 안팎으로 상기 기판을 통과시키기 위한 슬롯을 포함하는, 플라즈마 처리 시스템.
- 제 14 항에 있어서,상기 타일들은 상기 슬롯의 위 및 아래에 배열되며, 상기 슬롯은 상기 라이너에 부착된 웨이퍼 통과 삽입물내에 있으며, 상기 타일들과 삽입물은 실리콘 카바이드로 된, 플라즈마 처리 시스템.
- 제 12 항에 있어서,상기 내부 및 외부 금속 프레임 부재는 실린더형이고 연속적인 상부 부분들과 분할된 하부 부분들을 포함하고, 상기 분할된 하부 부분들은 축방향으로 연장된 슬롯에 의해 각각이 분리된 축방향으로 연장된 분할부를 포함하는, 플라즈마 처리 시스템.
- 제 1 항에 있어서,상기 세라믹 라이너의 하부 부분으로부터 내측으로 연장된 세라믹 플라즈마 스크린을 더 포함하고, 상기 세라믹 플라즈마 스크린은 기판의 처리 동안에 공정가스와 반응 부산물을 상기 챔버의 내부로부터 제거하는 통로를 포함하는, 플라즈마 처리 시스템.
- 제 17 항에 있어서,상기 세라믹 플라즈마 스크린은 실리콘 카바이드로 이루어지며, 상기 챔버 측벽과 상기 기판 지지체 사이의 환형의 공간 내에서 지지되는 복수 개의 분할부를 포함하며, 상기 통로들은 상기 챔버 측벽으로부터 내측으로 방사상으로 연장되는 슬롯을 포함하는, 플라즈마 처리 시스템.
- 제 17 항에 있어서,상기 세라믹 플라즈마 스크린은 전기 전도성 탄성중합체 결합부에 의해 탄성 지지부재에 부착되고, 상기 탄성 지지부재는 굽힘가능한 금속 프레임을 포함하고 상기 플라즈마 스크린은 상기 탄성중합체 결합부에 의해 상기 굽힘가능한 금속 프레임에 전기적으로 접지되는, 플라즈마 처리 시스템.
- 기판 지지체에 의해 지지된 개개의 기판이 챔버내에서 발생된 플라즈마로 식각되는, 제 1 항에 기재된 플라즈마 처리 시스템을 이용한 기판 처리 방법.
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US09/401,193 US6408786B1 (en) | 1999-09-23 | 1999-09-23 | Semiconductor processing equipment having tiled ceramic liner |
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KR (1) | KR100731557B1 (ko) |
CN (2) | CN100392804C (ko) |
AU (1) | AU7477900A (ko) |
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EP1138055B1 (en) | 2003-12-03 |
JP4741129B2 (ja) | 2011-08-03 |
CN1734710A (zh) | 2006-02-15 |
WO2001022471A1 (en) | 2001-03-29 |
DE60006933T2 (de) | 2004-11-11 |
CN1327612A (zh) | 2001-12-19 |
EP1138055A1 (en) | 2001-10-04 |
CN1215525C (zh) | 2005-08-17 |
KR20010080529A (ko) | 2001-08-22 |
TW512452B (en) | 2002-12-01 |
US6408786B1 (en) | 2002-06-25 |
DE60006933D1 (de) | 2004-01-15 |
CN100392804C (zh) | 2008-06-04 |
AU7477900A (en) | 2001-04-24 |
JP2003510810A (ja) | 2003-03-18 |
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