KR100716631B1 - 매입 배선 구조를 가지는 반도체 장치 및 그 제조 방법 - Google Patents
매입 배선 구조를 가지는 반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR100716631B1 KR100716631B1 KR1020000061563A KR20000061563A KR100716631B1 KR 100716631 B1 KR100716631 B1 KR 100716631B1 KR 1020000061563 A KR1020000061563 A KR 1020000061563A KR 20000061563 A KR20000061563 A KR 20000061563A KR 100716631 B1 KR100716631 B1 KR 100716631B1
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- 238000000034 method Methods 0.000 title claims description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 127
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 10
- 230000002265 prevention Effects 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000007747 plating Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- -1 tungsten nitride Chemical class 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001501 aryl fluorides Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920000090 poly(aryl ether) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1052—Formation of thin functional dielectric layers
- H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
- H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
- 기판에 형성된 제1 금속 배선;상기 제1 금속 배선을 피복하는 것으로 상기 기판 상에 형성된 절연막;상기 절연막에 형성된 홈;상기 홈으로부터 상기 제1 금속 배선에 달하는 상태로 상기 절연막에 형성된 접속공;상기 접속공 내를 매립하는 것으로 상기 제1 금속 배선과 같은 종류의 금속으로 이루어지고 상기 제1 금속 배선에 직접 접속되어 상기 홈 내까지 달하는 상태로 형성된 금속 플러그; 및상기 금속 플러그와 같은 종류의 금속으로 이루어지고 상기 금속 플러그에 직접 접속되어 상기 홈 내에 형성된 제2 금속 배선을 포함하는 반도체 장치.
- 제1항에 있어서,상기 금속의 확산을 방지하는 것으로 상기 홈의 측벽 및 저부에 형성된 확산 방지층을 추가로 포함하는 반도체 장치.
- 제2항에 있어서,상기 확산 방지층은 최소한 상기 접속공의 측벽에 노출된 부분이 전기적으로 절연화되어 있는 반도체 장치.
- 제1항에 있어서,상기 제1 금속 배선의 금속이 구리인 반도체 장치.
- 기판에 제1 금속 배선을 형성하는 공정;상기 기판 상에 상기 제1 금속 배선을 피복하는 절연막을 형성하는 공정;상기 절연막에 홈을 형성하는 공정;상기 절연막에 상기 홈으로부터 상기 제1 금속 배선에 달하는 접속공을 형성하는 공정;상기 제1 금속 배선으로부터 상기 제1 금속 배선과 같은 종류의 금속을 성장시켜 상기 접속공을 매립하는 동시에 상기 홈 내부에 달하는 상태로 금속 플러그를 형성하는 공정; 및상기 홈 내에 상기 금속 플러그와 같은 종류의 금속으로 이루어지는 것으로 상기 금속 플러그에 직접 접속되는 제2 금속 배선을 형성하는 공정을 포함하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 홈을 형성한 후이며 상기 접속공을 형성하기 전에, 상기 홈의 측벽 및 저부에 상기 금속의 확산을 방지하는 확산 방지층을 형성하는 공정을 추가로 포함 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 접속공을 관통시키기 전에, 상기 접속공의 측벽에 노출된 상기 확산 방지층을 전기적으로 절연화하는 공정을 추가로 포함하는 반도체 장치의 제조 방법.
- 제7항에 있어서,상기 확산 방지층을 전기적으로 절연화하는 공정은 상기 확산 방지층의 상기 홈의 측벽에 노출되어 있는 부분을 산화함으로써 행해지는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 제1 금속 배선의 금속이 구리인 반도체 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-297571 | 1999-10-20 | ||
JP29757199A JP2001118924A (ja) | 1999-10-20 | 1999-10-20 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010051132A KR20010051132A (ko) | 2001-06-25 |
KR100716631B1 true KR100716631B1 (ko) | 2007-05-09 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020000061563A KR100716631B1 (ko) | 1999-10-20 | 2000-10-19 | 매입 배선 구조를 가지는 반도체 장치 및 그 제조 방법 |
Country Status (4)
Country | Link |
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US (1) | US6395627B1 (ko) |
JP (1) | JP2001118924A (ko) |
KR (1) | KR100716631B1 (ko) |
TW (1) | TW469587B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269342A (ja) * | 1999-03-12 | 2000-09-29 | Toshiba Microelectronics Corp | 半導体集積回路および半導体集積回路の製造方法 |
JP3184177B2 (ja) * | 1999-03-26 | 2001-07-09 | キヤノン販売株式会社 | 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置 |
JP4063619B2 (ja) | 2002-03-13 | 2008-03-19 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2004304167A (ja) * | 2003-03-20 | 2004-10-28 | Advanced Lcd Technologies Development Center Co Ltd | 配線、表示装置及び、これらの形成方法 |
KR20090035127A (ko) * | 2007-10-05 | 2009-04-09 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
US7879720B2 (en) * | 2008-09-30 | 2011-02-01 | Samsung Electronics Co., Ltd. | Methods of forming electrical interconnects using electroless plating techniques that inhibit void formation |
KR102582523B1 (ko) * | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10658233B2 (en) * | 2018-10-17 | 2020-05-19 | International Business Machines Corporation | Dielectric damage-free dual damascene Cu interconnects without barrier at via bottom |
KR102674584B1 (ko) | 2019-01-04 | 2024-06-11 | 삼성전자주식회사 | 반도체 장치 |
CN113140501A (zh) * | 2020-01-17 | 2021-07-20 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
US11848264B2 (en) * | 2021-06-03 | 2023-12-19 | International Business Machines Corporation | Semiconductor structure with stacked vias having dome-shaped tips |
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JPH1116912A (ja) * | 1997-06-25 | 1999-01-22 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置の製造装置 |
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US4920070A (en) * | 1987-02-19 | 1990-04-24 | Fujitsu Limited | Method for forming wirings for a semiconductor device by filling very narrow via holes |
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JPH1116912A (ja) * | 1997-06-25 | 1999-01-22 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置の製造装置 |
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KR20010051132A (ko) | 2001-06-25 |
TW469587B (en) | 2001-12-21 |
JP2001118924A (ja) | 2001-04-27 |
US6395627B1 (en) | 2002-05-28 |
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