KR100702284B1 - 박막 트랜지스터 회로 장치 및 상기 박막 트랜지스터 회로 장치를 이용한 액정 표시 장치 - Google Patents

박막 트랜지스터 회로 장치 및 상기 박막 트랜지스터 회로 장치를 이용한 액정 표시 장치 Download PDF

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KR100702284B1
KR100702284B1 KR1020040057114A KR20040057114A KR100702284B1 KR 100702284 B1 KR100702284 B1 KR 100702284B1 KR 1020040057114 A KR1020040057114 A KR 1020040057114A KR 20040057114 A KR20040057114 A KR 20040057114A KR 100702284 B1 KR100702284 B1 KR 100702284B1
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South Korea
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thin film
film transistor
wiring
molybdenum alloy
electrode
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KR20050011725A (ko
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타나카히로아키
야스다쿄우네이
스즈키세이지
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엔이씨 엘씨디 테크놀로지스, 엘티디.
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Assigned to 한스타 디스플레이 코퍼레이션 reassignment 한스타 디스플레이 코퍼레이션 권리의 전부이전등록 Assignors: 골드 참 리미티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020040057114A 2003-07-22 2004-07-22 박막 트랜지스터 회로 장치 및 상기 박막 트랜지스터 회로 장치를 이용한 액정 표시 장치 Expired - Lifetime KR100702284B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00277459 2003-07-22
JP2003277459 2003-07-22
JP2004212977A JP2005057260A (ja) 2003-07-22 2004-07-21 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置
JPJP-P-2004-00212977 2004-07-21

Related Child Applications (1)

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KR1020060110237A Division KR20070003719A (ko) 2003-07-22 2006-11-09 박막 트랜지스터 회로 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20050011725A KR20050011725A (ko) 2005-01-29
KR100702284B1 true KR100702284B1 (ko) 2007-03-30

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KR1020040057114A Expired - Lifetime KR100702284B1 (ko) 2003-07-22 2004-07-22 박막 트랜지스터 회로 장치 및 상기 박막 트랜지스터 회로 장치를 이용한 액정 표시 장치
KR1020060110237A Withdrawn KR20070003719A (ko) 2003-07-22 2006-11-09 박막 트랜지스터 회로 장치의 제조 방법

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KR1020060110237A Withdrawn KR20070003719A (ko) 2003-07-22 2006-11-09 박막 트랜지스터 회로 장치의 제조 방법

Country Status (5)

Country Link
US (2) US7105896B2 (https=)
JP (1) JP2005057260A (https=)
KR (2) KR100702284B1 (https=)
CN (1) CN100370349C (https=)
TW (1) TWI253618B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510900B2 (en) 2016-09-07 2019-12-17 Samsung Display Co., Ltd. Display device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
TWI252587B (en) * 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
JP2007048878A (ja) * 2005-08-09 2007-02-22 Mitsubishi Electric Corp 半導体装置
US20070259190A1 (en) * 2006-05-02 2007-11-08 Jau-Jier Chu ITO transparent substrate with high resistance at low-temperature sputtering process and method for producing the same
US20070262311A1 (en) * 2006-05-11 2007-11-15 Toppoly Optoelectronics Corp. Flat panel display and fabrication method and thereof
JP2008133529A (ja) * 2006-08-29 2008-06-12 Rohm & Haas Electronic Materials Llc 剥離方法
KR101326128B1 (ko) 2006-09-29 2013-11-06 삼성디스플레이 주식회사 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법
TW200820444A (en) * 2006-10-27 2008-05-01 Chunghwa Picture Tubes Ltd Thin film transistor and fabrication method thereof
TWI374510B (en) 2008-04-18 2012-10-11 Au Optronics Corp Gate driver on array of a display and method of making device of a display
KR101909139B1 (ko) * 2011-02-07 2018-12-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US9666482B1 (en) * 2016-09-14 2017-05-30 Infineon Technologies Ag Self aligned silicon carbide contact formation using protective layer
CN110928085B (zh) * 2019-11-26 2021-01-15 Tcl华星光电技术有限公司 阵列基板及显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926598A (ja) * 1995-07-10 1997-01-28 Hitachi Ltd アクティブマトリクス型液晶ディスプレイ装置
JP2000284326A (ja) * 1999-03-30 2000-10-13 Hitachi Ltd 液晶表示装置とその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
US5530573A (en) * 1993-05-27 1996-06-25 Sharp Kabushiki Kaisha Multiple domain liquid crystal display having a cell thickness divided by helical pitch equal to 1/8 or less
KR100239778B1 (ko) * 1996-12-03 2000-01-15 구본준 액정표시장치 및 그 제조방법
JPH10293321A (ja) * 1997-04-17 1998-11-04 Mitsubishi Electric Corp 液晶表示装置およびその製造方法
JPH1187068A (ja) * 1997-07-15 1999-03-30 Tdk Corp 有機ｅｌ素子およびその製造方法
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JPH11259016A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板の製造方法
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
JP2000307118A (ja) * 1999-04-21 2000-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
KR100857719B1 (ko) * 2001-03-26 2008-09-08 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP4432015B2 (ja) * 2001-04-26 2010-03-17 日立金属株式会社 薄膜配線形成用スパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926598A (ja) * 1995-07-10 1997-01-28 Hitachi Ltd アクティブマトリクス型液晶ディスプレイ装置
JP2000284326A (ja) * 1999-03-30 2000-10-13 Hitachi Ltd 液晶表示装置とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510900B2 (en) 2016-09-07 2019-12-17 Samsung Display Co., Ltd. Display device

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Publication number Publication date
JP2005057260A (ja) 2005-03-03
CN100370349C (zh) 2008-02-20
TWI253618B (en) 2006-04-21
TW200515355A (en) 2005-05-01
US20060175611A1 (en) 2006-08-10
KR20070003719A (ko) 2007-01-05
CN1601360A (zh) 2005-03-30
US7105896B2 (en) 2006-09-12
KR20050011725A (ko) 2005-01-29
US7341898B2 (en) 2008-03-11
US20050056839A1 (en) 2005-03-17

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