KR100694777B1 - 포토레지스트 조성물용 반사방지 코팅 - Google Patents

포토레지스트 조성물용 반사방지 코팅 Download PDF

Info

Publication number
KR100694777B1
KR100694777B1 KR1020027001515A KR20027001515A KR100694777B1 KR 100694777 B1 KR100694777 B1 KR 100694777B1 KR 1020027001515 A KR1020027001515 A KR 1020027001515A KR 20027001515 A KR20027001515 A KR 20027001515A KR 100694777 B1 KR100694777 B1 KR 100694777B1
Authority
KR
South Korea
Prior art keywords
alkyl
coating composition
group
polymer
alkoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020027001515A
Other languages
English (en)
Korean (ko)
Other versions
KR20020071839A (ko
Inventor
딩슈지
칸나디네쉬엔
스파크마크에이
더럼다나엘
샨지안후이
곤잘레스엘리자
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 filed Critical 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Publication of KR20020071839A publication Critical patent/KR20020071839A/ko
Application granted granted Critical
Publication of KR100694777B1 publication Critical patent/KR100694777B1/ko
Assigned to 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 reassignment 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
    • G03C1/835—Macromolecular substances therefor, e.g. mordants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Materials For Photolithography (AREA)
KR1020027001515A 1999-08-05 2000-07-27 포토레지스트 조성물용 반사방지 코팅 Expired - Lifetime KR100694777B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/368,740 1999-08-05
US09/368,740 US6187506B1 (en) 1999-08-05 1999-08-05 Antireflective coating for photoresist compositions

Publications (2)

Publication Number Publication Date
KR20020071839A KR20020071839A (ko) 2002-09-13
KR100694777B1 true KR100694777B1 (ko) 2007-03-14

Family

ID=23452540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027001515A Expired - Lifetime KR100694777B1 (ko) 1999-08-05 2000-07-27 포토레지스트 조성물용 반사방지 코팅

Country Status (11)

Country Link
US (1) US6187506B1 (enExample)
EP (1) EP1210651B1 (enExample)
JP (1) JP4714394B2 (enExample)
KR (1) KR100694777B1 (enExample)
CN (1) CN1196030C (enExample)
AT (1) ATE424574T1 (enExample)
DE (1) DE60041704D1 (enExample)
HK (1) HK1048367A1 (enExample)
MY (1) MY126933A (enExample)
TW (1) TWI281941B (enExample)
WO (1) WO2001011429A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US6844131B2 (en) * 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US7070914B2 (en) 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6894104B2 (en) * 2002-05-23 2005-05-17 Brewer Science Inc. Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
US6733936B1 (en) 2002-09-19 2004-05-11 Integrated Device Technology, Inc. Method for generating a swing curve and photoresist feature formed using swing curve
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US20060057501A1 (en) * 2004-09-15 2006-03-16 Hengpeng Wu Antireflective compositions for photoresists
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7238624B2 (en) * 2005-03-01 2007-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for manufacturing semiconductor devices using a vacuum chamber
WO2006138637A1 (en) * 2005-06-16 2006-12-28 Rensselaer Polytechnic Institute Curcumin and curcuminoid compounds, and use thereof as photosensitizers of onium salts
US7375172B2 (en) 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8486591B2 (en) * 2008-10-24 2013-07-16 Cheil Industries Inc. Photosensitive resin composition for color filter and color filter prepared using the same
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100230136A1 (en) * 2009-03-12 2010-09-16 Sumitomo Chemical Company, Limited Method for producing resist pattern
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
KR102255221B1 (ko) 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
CN113913075B (zh) * 2021-10-25 2022-09-20 嘉庚创新实验室 一种抗反射涂层组合物及可交联聚合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970002470A (ko) * 1995-06-15 1997-01-24 나카네 히사시 포지티브형 포토레지스트 조성물
KR970049041A (ko) * 1995-12-20 1997-07-29 나카네 히사시 화학감광형 포토레지스트조성물
KR19980024818A (ko) * 1996-09-20 1998-07-06 무네유키 마사유키 포지형 감광성 조성물
KR19990032102A (ko) * 1997-10-16 1999-05-06 유현식 가교형 광산발생제를 함유하는 포토레지스트 조성물
KR19990047613A (ko) * 1997-12-05 1999-07-05 유현식 비오니움 광산 발생제 및 이를 함유한 포토레지스트 조성물

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5525457A (en) 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US5652297A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
TW464791B (en) * 1996-09-30 2001-11-21 Hoechst Celanese Corp Bottom antireflective coatings containing an arylhydrazo dye
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970002470A (ko) * 1995-06-15 1997-01-24 나카네 히사시 포지티브형 포토레지스트 조성물
KR970049041A (ko) * 1995-12-20 1997-07-29 나카네 히사시 화학감광형 포토레지스트조성물
KR19980024818A (ko) * 1996-09-20 1998-07-06 무네유키 마사유키 포지형 감광성 조성물
KR19990032102A (ko) * 1997-10-16 1999-05-06 유현식 가교형 광산발생제를 함유하는 포토레지스트 조성물
KR19990047613A (ko) * 1997-12-05 1999-07-05 유현식 비오니움 광산 발생제 및 이를 함유한 포토레지스트 조성물

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
WO-A-9814834
WO-A-9849603

Also Published As

Publication number Publication date
CN1367884A (zh) 2002-09-04
TWI281941B (en) 2007-06-01
CN1196030C (zh) 2005-04-06
MY126933A (en) 2006-11-30
ATE424574T1 (de) 2009-03-15
WO2001011429A1 (en) 2001-02-15
EP1210651A1 (en) 2002-06-05
EP1210651B1 (en) 2009-03-04
KR20020071839A (ko) 2002-09-13
US6187506B1 (en) 2001-02-13
JP2003506568A (ja) 2003-02-18
HK1048367A1 (zh) 2003-03-28
JP4714394B2 (ja) 2011-06-29
DE60041704D1 (de) 2009-04-16

Similar Documents

Publication Publication Date Title
EP1210651B1 (en) Antireflective coating for photoresist compositions
JP3835823B2 (ja) フォトレジスト組成物のための反射防止膜
KR100537381B1 (ko) 광산 발생제를 포함하는 반사 방지 조성물, 당해 조성물과 감광성 내식막이 피복된 기판 및 감광성 내식막 릴리프 화상의 형성방법
EP0140273B1 (en) Positive photoresist compositions having deep uv response, photosensitive elements and thermally stable photochemically imaged systems containing same
TW576859B (en) Antireflective coating compositions
JP3231794B2 (ja) フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法
EP0978015B1 (en) Light absorbing polymers
EP2158277B1 (en) Aqueous composition comprising lactam for coating over a photoresist pattern
EP1131678B1 (en) Antireflective composition for a deep ultraviolet photoresist
EP0583205B1 (en) Polymeric dyes for antireflective coatings
EP0919013B1 (en) Antireflective coatings for photoresist compositions
US4857435A (en) Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
KR20000068028A (ko) 광흡수성 중합체, 광흡수막 형성용 조성물, 광흡수막 및 이를
US5059513A (en) Photochemical image process of positive photoresist element with maleimide copolymer
KR20090049406A (ko) 환형 에스테르기를 포함하는 고분자 중합체, 및 이를포함하는 유기반사방지막 조성물
KR20090067259A (ko) 고리형 무수물기를 포함하는 고분자 중합체, 및 이를포함하는 유기반사방지막 조성물
KR20090067257A (ko) 옥세탄기를 포함하는 고분자 중합체, 및 이를 포함하는유기반사방지막 조성물
KR20090067258A (ko) 아크릴 아마이드기를 포함하는 고분자 중합체, 및 이를포함하는 유기반사방지막 조성물

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20020204

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20050321

Comment text: Request for Examination of Application

N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20050808

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060828

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20070201

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20070307

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20070308

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20100122

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20110225

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20120228

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20130227

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20140227

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20140227

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20150227

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20150227

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20151230

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20151230

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20170202

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20170202

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20190218

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20190218

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20200218

Start annual number: 14

End annual number: 14

PC1801 Expiration of term

Termination date: 20210127

Termination category: Expiration of duration