KR100684893B1 - 자기 메모리 장치 및 그 제조방법 - Google Patents

자기 메모리 장치 및 그 제조방법 Download PDF

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Publication number
KR100684893B1
KR100684893B1 KR1020050025562A KR20050025562A KR100684893B1 KR 100684893 B1 KR100684893 B1 KR 100684893B1 KR 1020050025562 A KR1020050025562 A KR 1020050025562A KR 20050025562 A KR20050025562 A KR 20050025562A KR 100684893 B1 KR100684893 B1 KR 100684893B1
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KR
South Korea
Prior art keywords
storage element
film
magnetic storage
magnetic
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050025562A
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English (en)
Korean (ko)
Other versions
KR20060103706A (ko
Inventor
정원철
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050025562A priority Critical patent/KR100684893B1/ko
Priority to US11/342,415 priority patent/US7262989B2/en
Priority to JP2006086233A priority patent/JP4970821B2/ja
Publication of KR20060103706A publication Critical patent/KR20060103706A/ko
Application granted granted Critical
Publication of KR100684893B1 publication Critical patent/KR100684893B1/ko
Priority to US11/782,423 priority patent/US7414882B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR1020050025562A 2005-03-28 2005-03-28 자기 메모리 장치 및 그 제조방법 Expired - Fee Related KR100684893B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050025562A KR100684893B1 (ko) 2005-03-28 2005-03-28 자기 메모리 장치 및 그 제조방법
US11/342,415 US7262989B2 (en) 2005-03-28 2006-01-30 Magnetic memory device having flux focusing layer therein
JP2006086233A JP4970821B2 (ja) 2005-03-28 2006-03-27 磁気メモリ装置
US11/782,423 US7414882B2 (en) 2005-03-28 2007-07-24 Magnetic memory devices having rotationally offset magnetic storage elements therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050025562A KR100684893B1 (ko) 2005-03-28 2005-03-28 자기 메모리 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20060103706A KR20060103706A (ko) 2006-10-04
KR100684893B1 true KR100684893B1 (ko) 2007-02-20

Family

ID=37082990

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050025562A Expired - Fee Related KR100684893B1 (ko) 2005-03-28 2005-03-28 자기 메모리 장치 및 그 제조방법

Country Status (3)

Country Link
US (2) US7262989B2 (enExample)
JP (1) JP4970821B2 (enExample)
KR (1) KR100684893B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
US8085581B2 (en) * 2008-08-28 2011-12-27 Qualcomm Incorporated STT-MRAM bit cell having a rectangular bottom electrode plate and improved bottom electrode plate width and interconnect metal widths
US8374048B2 (en) 2010-08-11 2013-02-12 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
US6178131B1 (en) 1999-01-11 2001-01-23 Ball Semiconductor, Inc. Magnetic random access memory
US6538920B2 (en) * 2001-04-02 2003-03-25 Manish Sharma Cladded read conductor for a pinned-on-the-fly soft reference layer
JP2002359355A (ja) 2001-05-28 2002-12-13 Internatl Business Mach Corp <Ibm> 多層構造の不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6750491B2 (en) * 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
US6606263B1 (en) * 2002-04-19 2003-08-12 Taiwan Semiconductor Manufacturing Company Non-disturbing programming scheme for magnetic RAM
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
JP3980990B2 (ja) * 2002-10-31 2007-09-26 株式会社東芝 磁気メモリ
US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6818549B2 (en) 2003-03-05 2004-11-16 Hewlett-Packard Development Company, L.P. Buried magnetic tunnel-junction memory cell and methods
JP2004273969A (ja) * 2003-03-12 2004-09-30 Sony Corp 磁気記憶装置の製造方法
US6937506B2 (en) * 2004-01-08 2005-08-30 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
US7088611B2 (en) * 2004-11-30 2006-08-08 Infineon Technologies Ag MRAM with switchable ferromagnetic offset layer
US7180113B2 (en) * 2005-02-10 2007-02-20 Infineon Technologies Ag Double-decker MRAM cell with rotated reference layer magnetizations

Also Published As

Publication number Publication date
JP2006279047A (ja) 2006-10-12
US7414882B2 (en) 2008-08-19
US20060227599A1 (en) 2006-10-12
US7262989B2 (en) 2007-08-28
US20070263431A1 (en) 2007-11-15
KR20060103706A (ko) 2006-10-04
JP4970821B2 (ja) 2012-07-11

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