KR100682639B1 - 성형 가스 플라즈마를 이용한 포토레지스트 제거 처리 방법 - Google Patents

성형 가스 플라즈마를 이용한 포토레지스트 제거 처리 방법 Download PDF

Info

Publication number
KR100682639B1
KR100682639B1 KR1020027000179A KR20027000179A KR100682639B1 KR 100682639 B1 KR100682639 B1 KR 100682639B1 KR 1020027000179 A KR1020027000179 A KR 1020027000179A KR 20027000179 A KR20027000179 A KR 20027000179A KR 100682639 B1 KR100682639 B1 KR 100682639B1
Authority
KR
South Korea
Prior art keywords
photoresist
layer
dielectric constant
integrated circuit
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020027000179A
Other languages
English (en)
Korean (ko)
Other versions
KR20020060679A (ko
Inventor
유루
애반지노스티븐씨.
버트랜드자쿠에스
후앙리차드제이.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20020060679A publication Critical patent/KR20020060679A/ko
Application granted granted Critical
Publication of KR100682639B1 publication Critical patent/KR100682639B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020027000179A 1999-07-07 2000-03-13 성형 가스 플라즈마를 이용한 포토레지스트 제거 처리 방법 Expired - Lifetime KR100682639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/349,055 1999-07-07
US09/349,055 US6235453B1 (en) 1999-07-07 1999-07-07 Low-k photoresist removal process

Publications (2)

Publication Number Publication Date
KR20020060679A KR20020060679A (ko) 2002-07-18
KR100682639B1 true KR100682639B1 (ko) 2007-02-15

Family

ID=23370728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027000179A Expired - Lifetime KR100682639B1 (ko) 1999-07-07 2000-03-13 성형 가스 플라즈마를 이용한 포토레지스트 제거 처리 방법

Country Status (5)

Country Link
US (1) US6235453B1 (https=)
EP (1) EP1192506B1 (https=)
JP (1) JP4557479B2 (https=)
KR (1) KR100682639B1 (https=)
WO (1) WO2001004707A1 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492186B1 (en) 1999-08-05 2002-12-10 Eaton Corporation Method for detecting an endpoint for an oxygen free plasma process
US6281135B1 (en) * 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6524963B1 (en) * 1999-10-20 2003-02-25 Chartered Semiconductor Manufacturing Ltd. Method to improve etching of organic-based, low dielectric constant materials
JP4381526B2 (ja) * 1999-10-26 2009-12-09 東京エレクトロン株式会社 プラズマエッチング方法
US6794298B2 (en) * 2000-02-04 2004-09-21 Advanced Micro Devices, Inc. CF4+H2O plasma ashing for reduction of contact/via resistance
EP1990832A3 (en) * 2000-02-25 2010-09-29 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US6444136B1 (en) * 2000-04-25 2002-09-03 Newport Fab, Llc Fabrication of improved low-k dielectric structures
WO2002027786A1 (en) * 2000-09-25 2002-04-04 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US6475707B2 (en) * 2000-12-22 2002-11-05 United Microelectronics Corp. Method of reworking photoresist layer
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6777344B2 (en) * 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
JP2002252222A (ja) * 2001-02-22 2002-09-06 Nec Corp 半導体装置の製造方法、及び半導体装置
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6673721B1 (en) * 2001-07-02 2004-01-06 Lsi Logic Corporation Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask
US20030059344A1 (en) * 2001-09-24 2003-03-27 Brady Michael D. Pin plate for use in array printing and method for making the pin plate
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
KR100792392B1 (ko) * 2002-01-10 2008-01-09 주식회사 하이닉스반도체 저유전율 절연막을 이용한 금속배선 형성방법
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6693043B1 (en) 2002-09-20 2004-02-17 Novellus Systems, Inc. Method for removing photoresist from low-k films in a downstream plasma system
US7169695B2 (en) 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
US20040099283A1 (en) * 2002-11-26 2004-05-27 Axcelis Technologies, Inc. Drying process for low-k dielectric films
DE10255865B4 (de) * 2002-11-29 2007-03-22 Infineon Technologies Ag Verfahren zum Ätzen von Kontaktlöchern mit geringem Durchmesser
US7294580B2 (en) 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
KR100542031B1 (ko) * 2003-05-30 2006-01-11 피에스케이 주식회사 반도체 제조공정에서의 포토레지스트 제거방법
US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
JP2005217371A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US7029992B2 (en) * 2004-08-17 2006-04-18 Taiwan Semiconductor Manufacturing Company Low oxygen content photoresist stripping process for low dielectric constant materials
US7598176B2 (en) * 2004-09-23 2009-10-06 Taiwan Semiconductor Manufacturing Co. Ltd. Method for photoresist stripping and treatment of low-k dielectric material
US7241683B2 (en) 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
US7491647B2 (en) 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7413994B2 (en) * 2005-06-08 2008-08-19 Texas Instruments Incorporated Hydrogen and oxygen based photoresist removal process
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
US7910489B2 (en) 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US20070243713A1 (en) * 2006-04-12 2007-10-18 Lam Research Corporation Apparatus and method for generating activated hydrogen for plasma stripping
US7790047B2 (en) * 2006-04-25 2010-09-07 Applied Materials, Inc. Method for removing masking materials with reduced low-k dielectric material damage
JP2009164365A (ja) * 2008-01-08 2009-07-23 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US7915115B2 (en) * 2008-06-03 2011-03-29 International Business Machines Corporation Method for forming dual high-k metal gate using photoresist mask and structures thereof
CN103426818A (zh) * 2013-08-05 2013-12-04 上海华力微电子有限公司 修复金属互连层工艺中等离子体损伤的方法
CN105706222B (zh) * 2013-11-21 2018-11-23 株式会社尼康 布线图案的制造方法和晶体管的制造方法
RU2643172C2 (ru) * 2016-05-11 2018-01-31 федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный университет" (ФГБОУ ВО "ВГУ") Способ удаления фоторезистивных пленок с поверхности оптических стекол
US9741614B1 (en) 2016-07-11 2017-08-22 United Microelectronics Corp. Method of preventing trench distortion
EP3999913A4 (en) 2019-07-18 2022-08-10 Mattson Technology, Inc. MACHINING OF WORKPIECES USING HYDROGEN RADICALS AND OZONE GAS

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340456A (en) * 1978-06-05 1982-07-20 Motorola, Inc. Method for detecting the end point of a plasma etching reaction
JPH0770524B2 (ja) * 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
US5994755A (en) * 1991-10-30 1999-11-30 Intersil Corporation Analog-to-digital converter and method of fabrication
JPH07321027A (ja) * 1994-05-27 1995-12-08 Canon Inc レジスト層の除去方法及びそれを用いた除去装置
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5795831A (en) 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
JP4157185B2 (ja) * 1997-02-26 2008-09-24 財団法人国際科学振興財団 洗浄液及び洗浄方法
JP3318241B2 (ja) * 1997-09-19 2002-08-26 富士通株式会社 アッシング方法
JPH11150101A (ja) * 1997-11-18 1999-06-02 Nec Corp 半導体装置の製造方法
US6093635A (en) * 1997-12-18 2000-07-25 Advanced Micro Devices, Inc. High integrity borderless vias with HSQ gap filled patterned conductive layers
JP3287406B2 (ja) * 1999-06-11 2002-06-04 日本電気株式会社 半導体装置の製造方法
US6030901A (en) 1999-06-24 2000-02-29 Advanced Micro Devices, Inc. Photoresist stripping without degrading low dielectric constant materials

Also Published As

Publication number Publication date
JP4557479B2 (ja) 2010-10-06
JP2003504693A (ja) 2003-02-04
EP1192506A1 (en) 2002-04-03
EP1192506B1 (en) 2012-05-30
KR20020060679A (ko) 2002-07-18
US6235453B1 (en) 2001-05-22
WO2001004707A1 (en) 2001-01-18

Similar Documents

Publication Publication Date Title
KR100682639B1 (ko) 성형 가스 플라즈마를 이용한 포토레지스트 제거 처리 방법
US6479380B2 (en) Semiconductor device and manufacturing method thereof
US6583067B2 (en) Method of avoiding dielectric layer deterioration with a low dielectric constant
US6605863B2 (en) Low k film application for interlevel dielectric and method of cleaning etched features
KR100887225B1 (ko) 반도체 디바이스의 제조 방법
US20020115285A1 (en) Mechanically reinforced highly porous low dielectric constant films
KR19980032600A (ko) 저유전율 인터레벨 집적 회로 구조 제조 방법
JP3193335B2 (ja) 半導体装置の製造方法
US6403464B1 (en) Method to reduce the moisture content in an organic low dielectric constant material
US6797627B1 (en) Dry-wet-dry solvent-free process after stop layer etch in dual damascene process
US6355572B1 (en) Method of dry etching organic SOG film
KR100333562B1 (ko) 저유전율막의 열화를 감소시킬 수 있는 반도체 장치 및 그 제조방법
KR100500932B1 (ko) 비아 콘택 식각 후의 감광막 제거 및 건식 세정 방법
JPH10242278A (ja) 半導体装置の製造方法及び半導体装置
US6713386B1 (en) Method of preventing resist poisoning in dual damascene structures
US20020177329A1 (en) Surface densification of low dielectric constant film
US6554002B2 (en) Method for removing etching residues
US6524944B1 (en) Low k ILD process by removable ILD
US7429542B2 (en) UV treatment for low-k dielectric layer in damascene structure
US7541296B2 (en) Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
US6495472B2 (en) Method for avoiding erosion of conductor structure during removing etching residues
KR20010089650A (ko) 디메틸술폭시드로 포토레지스트재를 제거하는 방법
KR101081853B1 (ko) 반도체 소자의 제조방법
KR20040103554A (ko) 금속 마스크층을 사용한 배선 형성 방법
KR930001498B1 (ko) 멀티레벨 금속층간의 상호 연결방법

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130130

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20140120

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150119

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160119

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170119

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180118

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20190116

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20200115

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20200314

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000