KR100674551B1 - 도금 장치 및 반도체 장치의 제조 방법 - Google Patents

도금 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100674551B1
KR100674551B1 KR1020020001330A KR20020001330A KR100674551B1 KR 100674551 B1 KR100674551 B1 KR 100674551B1 KR 1020020001330 A KR1020020001330 A KR 1020020001330A KR 20020001330 A KR20020001330 A KR 20020001330A KR 100674551 B1 KR100674551 B1 KR 100674551B1
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KR
South Korea
Prior art keywords
plating
plating liquid
semiconductor substrate
substrate
bath
Prior art date
Application number
KR1020020001330A
Other languages
English (en)
Korean (ko)
Other versions
KR20020071720A (ko
Inventor
후시다아쯔오
Original Assignee
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20020071720A publication Critical patent/KR20020071720A/ko
Application granted granted Critical
Publication of KR100674551B1 publication Critical patent/KR100674551B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
KR1020020001330A 2001-03-07 2002-01-10 도금 장치 및 반도체 장치의 제조 방법 KR100674551B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001062920A JP3364485B2 (ja) 2001-03-07 2001-03-07 めっき装置、及び半導体装置の製造方法
JPJP-P-2001-00062920 2001-03-07

Publications (2)

Publication Number Publication Date
KR20020071720A KR20020071720A (ko) 2002-09-13
KR100674551B1 true KR100674551B1 (ko) 2007-01-26

Family

ID=18921990

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020001330A KR100674551B1 (ko) 2001-03-07 2002-01-10 도금 장치 및 반도체 장치의 제조 방법

Country Status (2)

Country Link
JP (1) JP3364485B2 (ja)
KR (1) KR100674551B1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4330380B2 (ja) * 2003-05-29 2009-09-16 株式会社荏原製作所 めっき装置及びめっき方法
KR101494175B1 (ko) 2013-05-22 2015-02-17 (주)포인텍 도금조의 노즐 요동장치
JP7073332B2 (ja) * 2016-07-20 2022-05-23 テクニク，インク． 半導体ウェハ上の均一な厚さの金属層の電着
JP6995544B2 (ja) * 2017-09-20 2022-01-14 上村工業株式会社 表面処理装置および表面処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474886A (ja) * 1990-07-17 1992-03-10 Canon Inc メッキ法及びそれに用いるノズル
JPH05243235A (ja) * 1992-03-02 1993-09-21 Fujitsu Ltd 半導体装置の製造装置
JPH06224202A (ja) * 1993-01-22 1994-08-12 Oki Electric Ind Co Ltd 半導体ウエハのバンプ電極めっき装置
US5402563A (en) * 1992-08-28 1995-04-04 Hitachi, Ltd. Apparatus for removing electronic device from printed circuit board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474886A (ja) * 1990-07-17 1992-03-10 Canon Inc メッキ法及びそれに用いるノズル
JPH05243235A (ja) * 1992-03-02 1993-09-21 Fujitsu Ltd 半導体装置の製造装置
US5402563A (en) * 1992-08-28 1995-04-04 Hitachi, Ltd. Apparatus for removing electronic device from printed circuit board
JPH06224202A (ja) * 1993-01-22 1994-08-12 Oki Electric Ind Co Ltd 半導体ウエハのバンプ電極めっき装置

Also Published As

Publication number Publication date
JP3364485B2 (ja) 2003-01-08
KR20020071720A (ko) 2002-09-13
JP2002266098A (ja) 2002-09-18

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